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CERN Accelerating science

CERN Document Server 2,048 registres trobats  1 - 10següentfinal  anar al registre: La cerca s'ha fet en 0.39 segons. 
1.
Study of SEU Sensitivity of SRAM-Based Radiation Monitors in 65-nm CMOS / Wang, Jialei (Leuven U.) ; Prinzie, Jeffrey (Leuven U.) ; Coronetti, Andrea (CERN ; Jyvaskyla U.) ; Thys, S (Leuven U.) ; García Alia, Rubén (CERN) ; Leroux, Paul (Leuven U.)
This article presents a static random access memory (SRAM)-based flexible radiation monitor. The monitor was fabricated in a 65-nm CMOS technology and it is designed as an application-specific integrated circuit, which comprises 768k bits SRAM cell matrix with individual power supply and a digital control core with a serial peripheral interface (SPI). [...]
2021 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 68 (2021) 913-920
2.
A 2.56-GHz SEU Radiation Hard $LC$ -Tank VCO for High-Speed Communication Links in 65-nm CMOS Technology / Prinzie, Jeffrey (Leuven U.) ; Christiansen, Jorgen (CERN) ; Moreira, Paulo (CERN) ; Steyaert, Michiel (Leuven U.) ; Leroux, Paul (Leuven U.)
This paper presents a radiation tolerant phase-locked loop CMOS application-specified integrated circuit with an optimized voltage controlled oscillator (VCO) for single-event upsets (SEUs). The circuit is designed for high-energy particle physics experiments for low-jitter clock generation and clock recovery. [...]
2017 - 6 p. - Published in : IEEE Trans. Nucl. Sci. 65 (2018) 407-412
In : 54th Annual IEEE International Nuclear and Space Radiation Effects Conference, New Orleans, LA, USA, 17 - 21 Jul 2017, pp.407-412
3.
Proton Direct Ionization Upsets at Tens of MeV / Coronetti, Andrea (CERN ; IES, Montpellier) ; García Alía, Rubén (CERN) ; Lucsanyi, David (CERN) ; Wang, Jialei (Leuven U.) ; Saigné, Frédéric (IES, Montpellier) ; Javanainen, Arto (Jyvaskyla U. ; Vanderbilt U. (main)) ; Leroux, Paul (Leuven U.) ; Prinzie, Jeffrey (Leuven U.)
Experimental monoenergetic proton single-event upset (SEU) cross sections of a 65-nm low core-voltage static random access memory (SRAM) were found to be exceptionally high not only at low energies (< 3 MeV), but also at energies $>$ 3 MeV and extending up to tens of MeV. The SEU cross Section from 20-MeV protons exceeds the 200-MeV proton SEU cross Section by almost a factor of 3. [...]
2023 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 70 (2023) 314-321 Fulltext: PDF;
In : 2022 IEEE Nuclear and Space Radiation Effects Conference, Provo, Utah, USA, 18 - 23 Jul 2022, pp.314-321
4.
Single-Event Effect Responses of CMOS Integrated Planar Multiturn Inductors in LC-Tank Oscillators Under Heavy-Ion Microbeam Irradiation / Adom-Bamfi, Gideon (Leuven U.) ; Biereigel, Stefan (CERN) ; Leroux, Paul (Leuven U.) ; Prinzie, Jeffrey (Leuven U.)
This article presents detailed measurements of a novel radiation effect caused by the sensitivity of on-chip spiral inductors to ionizing particles, leading to single-event frequency transients (SEFTs) in LC-tank oscillators. Quantitative experimental results from heavy-ion microbeam irradiation of two-turn and four-turn inductor samples are presented. [...]
2024 - 11 p. - Published in : IEEE Trans. Nucl. Sci. 71 (2024) 1380-1390
5.
Fusion Neutron-Induced Soft Errors During Long Pulse D–D Plasma Discharges in the WEST Tokamak / Moindjie, S (IM2NP, Marseille) ; Munteanu, D (IM2NP, Marseille) ; Autran, J L (IM2NP, Marseille ; Rennes U.) ; Dentan, M (CEA Cadarache) ; Moreau, P (CEA Cadarache) ; Pellissier, F P (CEA Cadarache) ; Santraine, B (CEA Cadarache) ; Bucalossi, J (CEA Cadarache) ; Malherbe, V ; Thery, T et al.
We have performed real-time soft error rate (RT-SER) measurements on bulk 65-nm static random access memories (SRAMs) during deuterium-deuterium (D-D) plasma operation at W-tungsten–Environment in Steady-state Tokamak (WEST). The present measurement campaign was characterized by the production of several tens of long pulse discharges (~60 s) and by a total neutron fluence (at the level of the circuits under test) up to ~$10^9$ n$\cdot$cm$^2$ , improving the error statistics by a factor of more than 6 with respect to the first measurements obtained in 2020. [...]
2024 - 7 p. - Published in : IEEE Trans. Nucl. Sci.

In : Conference on Radiation and its Effects on Components and Systems (RADECS 2023), Toulouse, France, 25 - 29 Sep 2023, pp.1496-1502
6.
Analysis of the Photoneutron Field Near the THz Dump of the CLEAR Accelerator at CERN With SEU Measurements and Simulations / Lerner, Giuseppe (CERN) ; Coronetti, Andrea (CERN ; Jyvaskyla U.) ; Kempf, Jean Mael (CERN ; ENSAE, Toulouse) ; Garcia Alia, Ruben (CERN) ; Cerutti, Francesco (CERN) ; Prelipcean, Daniel (CERN ; Munich, Tech. U.) ; Cecchetto, Matteo (CERN) ; Gilardi, Antonio (CERN ; Naples U. ; LBNL, Berkeley) ; Farabolini, Wilfrid (CERN ; Saclay) ; Corsini, Roberto (CERN)
We study the radiation environment near the terahertz (THz) dump of the CERN Linear Electron Accelerator for Research (CLEAR) electron accelerator at CERN, using FLUktuierende KAskade in German (FLUKA) simulations and single-event upset (SEU) measurements taken with 32-Mbit Integrated Silicon Solution Inc. (ISSI) static random access memories (SRAMs). [...]
2022 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 69 (2022) 1541-1548 Fulltext: PDF;
7.
Radiation-Tolerant Digitally Controlled Ring Oscillator in 65-nm CMOS / Biereigel, Stefan (CERN ; Leuven U. ; Brandenburg Tech. U.) ; Kulis, Szymon (CERN) ; Leroux, Paul (Leuven U.) ; Moreira, Paulo (CERN) ; Prinzie, Jeffrey (Leuven U.)
This article presents a radiation-tolerant digitally controlled complementary metal–oxide–semiconductor (CMOS) ring oscillator design suitable for all-digital phase-locked loop (ADPLL) implementations. To address the challenges presented by harsh radiation environments, a wide tuning range oscillator architecture is presented with superior single-event effect (SEE) tolerance. [...]
2022 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 69 (2022) 17-25 Fulltext: PDF;
8.
Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment / Söderström, Daniel (Jyvaskyla U.) ; Matana Luza, Lucas (Montpellier U.) ; Kettunen, Heikki (Jyvaskyla U.) ; Javanainen, Arto (Jyvaskyla U. ; Vanderbilt U.) ; Farabolini, Wilfrid (CERN ; Saclay) ; Gilardi, Antonio (CERN ; Naples U. ; INFN Naples) ; Coronetti, Andrea (Jyvaskyla U. ; CERN) ; Poivey, Christian (ESTEC, Noordwijk) ; Dilillo, Luigi (Montpellier U.)
This study investigates the response of synchronous dynamic random access memories to energetic electrons and especially the possibility of electrons to cause stuck bits in these memories. Three different memories with different node sizes (63, 72, and 110 nm) were tested. [...]
2021 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 68 (2021) 716-723
9.
Ultrahigh energy heavy ion test beam on Xilinx Kintex-7 SRAM-based FPGA / Du, Boyang (Polytech. Turin) ; Sterpone, Luca (Polytech. Turin) ; Azimi, Sarah (Polytech. Turin) ; Codinachs, David Merodio (ESTEC, Noordwijk) ; Ferlet-Cavrois, Véronique (ESTEC, Noordwijk) ; Polo, Cesar Boatella (ESTEC, Noordwijk) ; García Alía, Rubén (CERN) ; Kastriotou, Maria (CERN) ; Fernandez-Martínez, Páblo (CERN)
In recent years, field-programmable gate array (FPGA) devices have attracted a lot of attentions due to the increasing performance they provide thanks to technology scaling, besides their high flexibility through in-field reprogramming and/or partial reconfiguration capability. However, when such devices are to be deployed in safety- and mission-critical applications such as avionic and space applications, it is mandatory to verify the reliability of the device in the target environment where radiation effect is considered as one of the major sources of faults in the system. [...]
2019 - 7 p. - Published in : IEEE Trans. Nucl. Sci. 66 (2019) 1813-1819
10.
A Low Noise Fault Tolerant Radiation Hardened 2.56 Gbps Clock-Data Recovery Circuit With High Speed Feed Forward Correction in 65 nm CMOS / Biereigel, Stefan (Leuven U.) ; Kulis, Szymon (CERN) ; Leitao, Pedro (CERN) ; Francisco, Rui (CERN) ; Moreira, Paulo (CERN) ; Leroux, Paul (Leuven U.) ; Prinzie, Jeffrey (Leuven U.)
A fault tolerant, radiation hardened Clock and Data Recovery (CDR) architecture is presented for high-energy physics and space applications. The CDR employs a novel soft-error tolerant Voltage Controlled Oscillator (VCO) and includes a high-speed feed-forward path, which stabilizes the CDR by compensating for an additional pole introduced in the VCO in order to harden it against ionizing particles. [...]
2019 - 9 p. - Published in : IEEE Trans. Circuits Theor. 67 (2019) 1438-1446

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