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Thin and edgeless sensors for ATLAS pixel detector upgrade
/ Ducourthial, Audrey (Paris U., VI-VII) ; Bomben, Marco (Paris U., VI-VII) ; Calderini, Giovanni (Paris U., VI-VII) ; D'Eramo, Louis (Paris U., VI-VII) ; Marchiori, Giovanni (Paris U., VI-VII) ; Luise, Ilaria (Paris U., VI-VII) ; Bagolini, Alvise (Fond. Bruno Kessler, Povo) ; Boscardin, Maurizio (Fond. Bruno Kessler, Trento) ; Bosisio, Luciano (INFN, Trieste ; Trieste U.) ; Darbo, Giovanni (INFN, Genoa) et al.
To cope with the harsh environment foreseen at the high luminosity conditions of HL- LHC, the ATLAS pixel detector has to be upgraded to be fully efficient with a good granularity, a maximized geometrical acceptance and an high read out rate. LPNHE, FBK and INFN are involved in the development of thin and edgeless planar pixel sensors in which the insensitive area at the border of the sensor is minimized thanks to the active edge technology. [...]
arXiv:1710.03557.-
2017-12-19 - 10 p.
- Published in : JINST 12 (2017) C12038
In : The 11th International conference in Position Sensitive Detectors, Milton Keynes, United Kingdom, 3 - 8 Sep 2017, pp.C12038
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Performance of active edge pixel sensors
/ Bomben, Marco (Paris U., VI-VII) ; Ducourthial, Audrey (Paris U., VI-VII) ; Bagolini, Alvise (Fond. Bruno Kessler, Povo) ; Boscardin, Maurizio (Fond. Bruno Kessler, Trento) ; Bosisio, Luciano (INFN, Trieste ; Trieste U.) ; Calderini, Giovanni (Paris U., VI-VII) ; D'Eramo, Louis (Paris U., VI-VII) ; Giacomini, Gabriele (Brookhaven ; FBK, CIT, Trento) ; Marchiori, Giovanni (Paris U., VI-VII) ; Zorzi, Nicola (Fond. Bruno Kessler, Trento) et al.
To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the insensitive area at the border of the sensor thanks to an ion etched trench which avoids the crystal damage produced by the standard mechanical dicing process. [...]
arXiv:1702.01709.-
2017-05-09 - 14 p.
- Published in : JINST 12 (2017) P05006
Fulltext: PDF; Preprint: PDF;
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3.
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Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade
/ Bomben, Marco (Paris, LPTHE) ; Bagolini, Alvise (Fond. Bruno Kessler, Povo) ; Boscardin, Maurizio (Fond. Bruno Kessler, Povo) ; Bosisio, Luciano (INFN, Trieste ; Trieste U.) ; Calderini, Giovanni (Paris U., VI-VII) ; Chauveau, Jacques (Paris U., VI-VII) ; Ducourthial, Audrey (Paris U., VI-VII) ; Giacomini, Gabriele (Fond. Bruno Kessler, Povo) ; Marchiori, Giovanni (Paris U., VI-VII) ; Zorzi, Nicola (Fond. Bruno Kessler, Povo)
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. [...]
arXiv:1609.02128.-
2016-10-06 - 4 p.
- Published in : 10.1109/NSSMIC.2015.7581991
Fulltext: PDF; External link: Preprint
In : 2015 IEEE Nuclear Science Symposium and Medical Imaging Conference, San Diego, CA, USA, 31 Oct - 7 Nov 2015
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Selected results from the static characterization of edgeless n-on-p planar pixel sensors for ATLAS upgrades
/ Giacomini, Gabriele (Fond. Bruno Kessler, Trento) ; Bagolini, Alvise (Fond. Bruno Kessler, Trento) ; Bomben, Marco (Paris U., VI-VII) ; Boscardin, Maurizio (Fond. Bruno Kessler, Povo) ; Bosisio, Luciano (U. Trieste (main) ; INFN, Trieste) ; Calderini, Giovanni (Paris U., VI-VII ; Pisa U. ; INFN, Pisa) ; Chauveau, Jacques (Paris U., VI-VII) ; La Rosa, Alessandro (Geneva U.) ; Marchiori, Giovanni (Paris U., VI-VII) ; Zorzi, Nicola (Fond. Bruno Kessler, Trento)
In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. [...]
arXiv:1312.0410; AIDA-PUB-2015-020.-
Geneva : CERN, 2014-01-31 - 10 p.
- Published in : JINST 9 (2014) C01063
Fulltext: arXiv:1312.0410 - PDF; AIDA-PUB-2015-020 - PDF; IOP Open Access article: PDF; External link: Preprint
In : 13th Topical Seminar on Innovative Particle and Radiation Detectors, Sienna, Italy, 7 - 10 Oct 2013, pp.C01063
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5.
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Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades
/ Bomben, Marco (Paris, LPTHE) ; Bagolini, Alvise (Trento U. ; Fond. Bruno Kessler, Trento) ; Boscardini, Maurizio (Trento U. ; Fond. Bruno Kessler, Trento) ; Bosisio, Luciano (Trieste U. ; INFN, Trieste) ; Calderini, Giovanni (Paris, LPTHE ; Pisa U. ; INFN, Pisa) ; Chauveau, Jaques (Paris, LPTHE) ; Giacomini, Gabriele (Trento U. ; Fond. Bruno Kessler, Trento) ; La Rosa, Alessandro (Geneva U.) ; Marchori, Giovanni (Paris, LPTHE) ; Zorzi, Nicola (Trento U. ; Fond. Bruno Kessler, Trento)
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. [...]
arXiv:1311.3780.-
2013 - 6 p.
- Published in : 10.1109/NSSMIC.2013.6829425
Fulltext: PDF; External link: Preprint
In : 2013 IEEE Nuclear Science Symposium and Medical Imaging Conference, Seoul, Korea, 26 Oct - 2 Nov 2013, pp.6829425
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6.
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Characterization of 3D-DDTC detectors on p-type substrates
/ Dalla Betta, Gian-Franco (INFN, Padua ; Trento U.) ; Boscardin, Maurizio (ITC-IRST, Trento) ; Bosisio, Luciano (INFN, Trieste ; Trieste U.) ; Darbo, Giovanni (INFN, Genoa) ; Gabos, Paolo (INFN, Padua ; Trento U.) ; Gemme, Claudia (INFN, Genoa) ; Koehler, Michael (Freiburg U.) ; La Rosa, Alessandro (CERN) ; Parzefall, Ulrich (Freiburg U.) ; Pernegger, Heinz (CERN) et al.
We report on the electrical and functional characterization of 3D Double-side, Double-Type-Column (3D- DDTC) detectors fabricated on p-type substrates. Results relevant to detectors in the diode, strip and pixel configurations are presented, and demonstrate a clear improvement in the charge collection performance compared to the first prototypes of these detectors..
arXiv:0911.4864.-
2009 - 8 p.
- Published in : (2009) , pp. 29-36
Fulltext: PDF; External link: Preprint
In : IEEE Nuclear Science Symposium And Medical Imaging Conference, Orlando, FL, USA, 25 Oct - 31 Oct 2009, pp.29-36
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