Nothing Special   »   [go: up one dir, main page]

CERN Accelerating science

CERN Document Server 25 ჩანაწერია ნაპოვნი  1 - 10შემდეგიდასასრული  ჩანაწერთან გადასვლა: ძიებას დასჭირდა 0.70 წამი. 
1.
Enhancement of System Observability During System-Level Radiation Testing Through Total Current Consumption Monitoring / Slipukhin, Ivan (CERN) ; Coronetti, Andrea (CERN) ; Alía, Rubén García (CERN) ; Saigné, Frédéric (IES, Montpellier) ; Boch, Jérôme (IES, Montpellier) ; Dilillo, Luigi (IES, Montpellier) ; Aguiar, Ygor Q (CERN) ; Cazzaniga, Carlo ; Kastriotou, Maria ; Dodd, Torran
System-level testing of electronics is an affordable method of assessment of the performance of complete electronic systems designed for applications in the radiation environment. Compared to component-level testing, system-level test offers a much smaller degree of observability about the performance of particular system elements. [...]
2024 - 8 p. - Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : Conference on Radiation and its Effects on Components and Systems (RADECS 2023), Toulouse, France, 25 - 29 Sep 2023, pp.1948-1955
2.
The CELESTA CubeSat In-Flight Radiation Measurements and Their Comparison With Ground Facilities Predictions / Coronetti, Andrea (CERN) ; Zimmaro, Alessandro (CERN) ; Alía, Rubén García (CERN) ; Danzeca, Salvatore (CERN) ; Masi, Alessandro (CERN) ; Slipukhin, Ivan (CERN) ; Amodio, Alessio (CERN) ; Dijks, Jasper (CERN) ; Peronnard, Paul (CERN) ; Secondo, Raffaello (CERN) et al.
The CELESTA CubeSat has employed radiation monitors developed by the Conseil Européen pour la Recherche Nucléaire (CERN) Centre, used for measuring the radiation environment at accelerators, to measure the space radiation field in a medium-Earth orbit (MEO). The technology is based on three static random-access memories (SRAMs) that are sensitive to single-event upsets (SEUs) and single-event latchups (SELs). [...]
2024 - 8 p. - Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : Conference on Radiation and its Effects on Components and Systems (RADECS 2023), Toulouse, France, 25 - 29 Sep 2023, pp.1623-1630
3.
Comparison of High Energy X-Ray and Cobalt-60 Irradiations on MOS Capacitors / Girones, Vincent (Montpellier U.) ; Boch, Jérôme (Montpellier U.) ; Saigné, Frédéric (Montpellier U.) ; Carapelle, Alain (CERN) ; Chapon, Arnaud ; Maraine, Tadec (Montpellier U.) ; Alía, Rubén García (CERN)
The use of a high energy X-ray generator for Total Ionizing Dose (TID) testing is studied on metal-oxide semiconductor (MOS) capacitors. Several conditions were studied for the high energy X-ray irradiations (with aluminum and lead filters) and the experimental results are compared to Cobalt 60 (Co-60) irradiations. [...]
2024 - 8 p. - Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : Conference on Radiation and its Effects on Components and Systems (RADECS 2023), Toulouse, France, 25 - 29 Sep 2023, pp.1879-1886
4.
Characterization of Fragmented Ultrahigh-Energy Heavy Ion Beam and Its Effects on Electronics Single-Event Effect Testing / Barbero, Mario Sacristán (CERN ; IES, Montpellier) ; Slipukhin, Ivan (CERN ; IES, Montpellier) ; Cecchetto, Matteo (CERN) ; Prelipcean, Daniel (CERN) ; Aguiar, Ygor (CERN) ; Bilko, Kacper (CERN) ; Emriskova, Natalia (CERN) ; Waets, Andreas (CERN) ; Coronetti, Andrea (CERN) ; Kastriotou, Maria (Rutherford Appleton Laboratory) et al.
Ultrahigh-energy (UHE) (>5 GeV/n) heavy ion beams exhibit different properties when compared to standard and high-energy ion beams. Most notably, fragmentation is a fundamental feature of the beam that may have important implications for electronics testing given the ultrahigh energies and, hence, ranges, preserved by the fragments. [...]
2024 - 8 p. - Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : Conference on Radiation and its Effects on Components and Systems (RADECS 2023), Toulouse, France, 25 - 29 Sep 2023, pp.1557-1564
5.
Impact of flux selection, pulsed beams and operation mode on system failure observability during radiation qualification / Zimmaro, Alessandro (CERN ; IES, Montpellier) ; Ferraro, Rudy (CERN) ; Boch, Jérôme (IES, Montpellier) ; Saigné, Frédéric (IES, Montpellier) ; García Alía, Rubén (CERN) ; Masi, Alessandro (CERN) ; Danzeca, Salvatore (CERN)
Systems and Systems on Chip (SoCs) under radiation can have complex failure modes with different probabilities. [...]
2022. - 8 p.
6.
An Analytical Approach to Calculate Soft Error Rate Induced by Atmospheric Neutrons / Wrobel, Frédéric (IES, Montpellier) ; Aguiar, Ygor (CERN) ; Marques, Cleiton (IES, Montpellier) ; Lerner, Giuseppe (CERN) ; Alía, Rubén García (CERN) ; Saigné, Frédéric (IES, Montpellier) ; Boch, Jérôme (IES, Montpellier)
In the atmosphere, it is generally understood that neutrons are the main contributor to the soft error rate (SER) in electronic devices. These particles are indeed able to trigger nuclear reactions in the sensitive regions of the devices, leading to secondary ions that may ionize the matter sufficiently to upset a memory cell or induce a transient signal, known as soft errors. [...]
2022 - 12 p. - Published in : Electronics 12 (2022) 104 Fulltext: PDF;
7.
The Use of High-Energy X-Ray Generators for TID Testing of Electronic Devices / Girones, Vincent (CNRS, France ; Montpellier U.) ; Boch, Jérôme (CNRS, France ; Montpellier U.) ; Carapelle, Alain ; Chapon, Arnaud ; Maraine, Tadec (CNRS, France ; Montpellier U.) ; Labau, Timothee (CNRS, France ; Montpellier U.) ; Saigné, Frédéric (CNRS, France ; Montpellier U.) ; García Alía, Rubén (CERN)
A high-energy X-ray generator is studied in order to perform dose tests on electronic components. The main idea is to reduce the photoelectric effect in order to get closer to the Compton scattering. [...]
2023 - 8 p. - Published in : IEEE Trans. Nucl. Sci.

In : European Conference on Radiation and its Effects on Components and Systems, Venice, Italy, 3 - 7 Oct 2022, pp.1982-1989
8.
Exploring Radiation-Induced Vulnerabilities in RFICs Through Traditional RF Metrics / Scialdone, Antonio (CERN ; LIRMM, Montpellier ; Montpellier U. ; CNRS, France) ; Ferraro, Rudy (cern) ; Dilillo, Luigi (LIRMM, Montpellier ; Montpellier U. ; CNRS, France) ; Saigne, Frederic (Montpellier U. ; CNRS, France) ; Boch, Jérôme (CNRS, France ; Montpellier U.) ; Masi, Alessandro (CERN) ; Danzeca, Salvatore (CERN)
This article describes how to analyze radiation-induced effects using traditional radio-frequency (RF) metrics in RF integrated circuits (RFICs) to be used in the implementation of software-defined radios (SDRs). The impacts of total ionizing dose (TID) and single-event effects (SEEs) on the device characteristics are shown and their consequences for an SDR are discussed. [...]
2023 - 8 p. - Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : European Conference on Radiation and its Effects on Components and Systems, Venice, Italy, 3 - 7 Oct 2022, pp.2068-2075
9.
An Analysis of the Significance of the 14N(n, p) 14C Reaction for Single-Event Upsets Induced by Thermal Neutrons in SRAMs / Coronetti, Andrea (CERN ; Montpellier U.) ; García Alía, Rubén (CERN) ; Lucsanyi, David (CERN) ; Letiche, Manon (Laue-Langevin Inst.) ; Kastriotou, Maria ; Cazzaniga, Carlo ; Frost, Christopher D ; Saigné, Frédéric (Montpellier U.)
The thermal neutron threat to the reliability of electronic devices caused by $^{10}\text{B}$ capture is a recognized issue that prompted changes in the manufacturing process of electronic devices with the aim of limiting as much as possible the presence of this isotope nearby device sensitive volumes (SVs). $^{14}\text{N}$ can also capture thermal neutrons and release low-energy protons (LEPs; through the $^{14}\text{N}$ (n, p) $^{14}\text{C}$ reaction) that have high enough linear energy transfer (LET) to cause single-event upsets (SEUs). [...]
2023 - 9 p. - Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : European Conference on Radiation and its Effects on Components and Systems, Venice, Italy, 3 - 7 Oct 2022, pp.1634-1642
10.
Proton Direct Ionization Upsets at Tens of MeV / Coronetti, Andrea (CERN ; IES, Montpellier) ; García Alía, Rubén (CERN) ; Lucsanyi, David (CERN) ; Wang, Jialei (Leuven U.) ; Saigné, Frédéric (IES, Montpellier) ; Javanainen, Arto (Jyvaskyla U. ; Vanderbilt U. (main)) ; Leroux, Paul (Leuven U.) ; Prinzie, Jeffrey (Leuven U.)
Experimental monoenergetic proton single-event upset (SEU) cross sections of a 65-nm low core-voltage static random access memory (SRAM) were found to be exceptionally high not only at low energies (< 3 MeV), but also at energies $>$ 3 MeV and extending up to tens of MeV. The SEU cross Section from 20-MeV protons exceeds the 200-MeV proton SEU cross Section by almost a factor of 3. [...]
2023 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 70 (2023) 314-321 Fulltext: PDF;
In : 2022 IEEE Nuclear and Space Radiation Effects Conference, Provo, Utah, USA, 18 - 23 Jul 2022, pp.314-321

CERN Document Server : 25 ჩანაწერია ნაპოვნი   1 - 10შემდეგიდასასრული  ჩანაწერთან გადასვლა:
ასევე იხილეთ: მსგავსი ავტორის სახელები
13 Saigne, F
2 Saigne, F.
13 Saigné, F
25 Saigné, Frederic
25 Saigné, Frédéric
გნებავთ შეტყობინების მიღება, ამ კითხვაზე ახალი პასუხების შემთხვევაში?
დააყენეთ პირადი ელფოსტის შეტყობინება ან ჩაეწერეთ RSS ფიდზე.
ვერ იპოვნეთ რასაც ეძებდით? სცადეთ თქვენი ძებნა სხვა სერვერებზე:
Saigne, Frederic ში Amazon
Saigne, Frederic ში CERN EDMS
Saigne, Frederic ში CERN Intranet
Saigne, Frederic ში CiteSeer
Saigne, Frederic ში Google Books
Saigne, Frederic ში Google Scholar
Saigne, Frederic ში Google Web
Saigne, Frederic ში IEC
Saigne, Frederic ში IHS
Saigne, Frederic ში INSPIRE
Saigne, Frederic ში ISO
Saigne, Frederic ში KISS Books/Journals
Saigne, Frederic ში KISS Preprints
Saigne, Frederic ში NEBIS
Saigne, Frederic ში SLAC Library Catalog
Saigne, Frederic ში Scirus