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Simulating Monolithic Active Pixel Sensors: A Technology-Independent Approach Using Generic Doping Profiles
/ Wennlöf, Håkan (DESY) ; Dannheim, Dominik (CERN) ; Viera, Manuel Del Rio (DESY ; Bonn U.) ; Dort, Katharina (CERN ; Giessen U.) ; Eckstein, Doris (DESY) ; Feindt, Finn (DESY) ; Gregor, Ingrid-Maria (DESY) ; Huth, Lennart (DESY) ; Lachnit, Stephan (DESY ; Hamburg U.) ; Mendes, Larissa (DESY ; Bonn U.) et al.
The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electrostatic field simulations and Monte Carlo methods. [...]
arXiv:2408.00027.
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Simulations and performance studies of a MAPS in 65 nm CMOS imaging technology
/ Simancas, Adriana (DESY ; Bonn U.) ; Braach, Justus (CERN ; Hamburg U., Dept. Math.) ; Buschmann, Eric (CERN) ; Chauhan, Ankur (DESY) ; Dannheim, Dominik (CERN) ; Viera, Manuel Del Rio (DESY ; Bonn U.) ; Dort, Katharina (CERN ; Giessen U.) ; Eckstein, Doris (DESY) ; Feindt, Finn (DESY) ; Gregor, Ingrid-Maria (DESY) et al.
Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF, granting a high signal-to-noise ratio and low power consumption. [...]
arXiv:2402.14524.-
2024-05-03 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1064 (2024) 169414
Fulltext: 2402.14524 - PDF; Publication - PDF;
In : 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Vancouver, Canada, 3 - 8 Dec 2023, pp.169414
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Towards a new generation of Monolithic Active Pixel Sensors
/ Chauhan, Ankur (DESY) ; Viera, Manuel Del Rio (DESY ; Bonn U.) ; Eckstein, Doris (DESY) ; Feindt, Finn (DESY) ; Gregor, Ingrid-Maria (DESY) ; Hansen, Karsten (DESY) ; Huth, Lennart (DESY) ; Mendes, Larissa (DESY ; U. Campinas) ; Mulyanto, Budi (DESY) ; Rastorguev, Daniil (DESY ; Wuppertal U.) et al.
A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities of on-chip circuits and, for a given pixel size, more sophisticated in-pixel logic compared to larger feature size processes. MAPS are a cost-effective alternative to hybrid pixel sensors since flip-chip bonding is not required. [...]
arXiv:2210.09810.-
2023 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1047 (2023) 167821
Fulltext: PDF;
In : 15th Pisa Meeting on Advanced Detectors, La Biodola - Isola D'elba, Italy, 22 - 28 May 2022, pp.167821
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Characterisation and simulation of stitched CMOS strip sensors
/ Davis, Naomi (DESY) ; Arling, Jan-Hendrik (DESY) ; Baselga, Marta (Dortmund U.) ; Diehl, Leena (Freiburg U. ; CERN) ; Dingfelder, Jochen (Bonn U.) ; Gregor, Ingrid-Maria (DESY) ; Hauser, Marc (Freiburg U.) ; Hügging, Fabian (Bonn U.) ; Hemperek, Tomasz (Bonn U. ; Unlisted, CH) ; Jakobs, Karl (Freiburg U.) et al.
In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. [...]
arXiv:2405.08667.-
2024-04-29 - 4 p.
Fulltext: 2405.08667 - PDF; Publication - PDF;
In : 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Vancouver, Canada, 3 - 8 Dec 2023, pp.169407
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Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process
/ Rinella, Gianluca Aglieri (CERN) ; Alocco, Giacomo (INFN, Cagliari) ; Antonelli, Matias (INFN, Trieste) ; Baccomi, Roberto (INFN, Trieste) ; Beole, Stefania Maria (INFN, Turin) ; Blidaru, Mihail Bogdan (Heidelberg U.) ; Buttwill, Bent Benedikt (Heidelberg U.) ; Buschmann, Eric (CERN) ; Camerini, Paolo (Trieste U. ; INFN, Trieste) ; Carnesecchi, Francesca (CERN) et al.
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. [...]
arXiv:2403.08952.-
2024-09-21 - 40 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1069 (2024) 169896
Fulltext: 2403.08952 - PDF; Publication - PDF;
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Developing a Monolithic Silicon Sensor in a 65nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors
/ Simancas, Adriana (DESY, Zeuthen ; Bonn U.) ; Braach, Justus (CERN ; Hamburg U.) ; Buschmann, Eric (CERN) ; Chauhan, Ankur (DESY, Zeuthen) ; Dannheim, Dominik (CERN) ; Viera, Manuel Del Rio (DESY, Zeuthen ; Bonn U.) ; Dort, Katharina (CERN ; Giessen U.) ; Eckstein, Doris (DESY, Zeuthen) ; Feindt, Finn (DESY, Zeuthen) ; Gregor, Ingrid-Maria (DESY, Zeuthen) et al.
Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D; Programme on Technologies for Future Experiments for an application in particle physics. The appeal of monolithic detectors lies in the fact that both sensor volume and readout electronics are integrated in the same silicon wafer, providing a reduction in production effort, costs and scattering material. [...]
arXiv:2303.18153.-
2022-11-05 - 7 p.
- Published in : 10.1109/NSS/MIC44845.2022.10398964
Fulltext: PDF;
In : 2022 IEEE Nuclear Science Symposium (NSS), Medical Imaging Conference (MIC) and Room Temperature Semiconductor Detector (RTSD) Conference (NSS/MIC 2022), Milan, Italy, 5 - 12 Nov 2022
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Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD
/ Dort, Katharina (CERN) ; Ballabriga, Rafael (CERN) ; Braach, Justus (CERN) ; Buschmann, Eric (CERN) ; Campbell, Michael (CERN) ; Dannheim, Dominik (CERN) ; Huth, Lennart (DESY) ; Kremastiotis, Iraklis (CERN) ; Kröger, Jens (CERN) ; Linssen, Lucie (CERN) et al.
Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. [...]
arXiv:2204.10569.-
2022-10-11 - 11 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1041 (2022) 167413
Fulltext: 1-s2.0-S0168900222007069-main - PDF; 2204.10569 - PDF;
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Transient Monte Carlo Simulations for the Optimisation and Characterisation of Monolithic Silicon Sensors
/ Ballabriga, Rafael (CERN) ; Braach, Justus (CERN) ; Buschmann, Eric (CERN) ; Campbell, Michael (CERN) ; Dannheim, Dominik (CERN) ; Dort, Katharina (CERN) ; Huth, Lennart (DESY) ; Kremastiotis, Iraklis (CERN) ; Kröger, Jens (CERN) ; Linssen, Lucie (CERN) et al.
An ever-increasing demand for high-performance silicon sensors requires complex sensor designs that are challenging to simulate and model. The combination of electrostatic finite element simulations with a transient Monte Carlo approach provides simultaneous access to precise sensor modelling and high statistics. [...]
arXiv:2202.03221.-
2022-05-11 - 16 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1031 (2022) 166491
2202.03221: PDF; Fulltext: PDF; Fulltext from publisher: PDF;
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EUTelescope: A modular reconstruction framework for beam telescope data
/ Bisanz, Tobias (Gottingen U., II. Phys. Inst. ; CERN) ; Jansen, Hendrik (DESY) ; Arling, Jan-Hendrik (DESY) ; Bulgheroni, Antonio (Insubria U., Como) ; Dreyling-Eschweiler, Jan (DESY) ; Eichhorn, Thomas (DESY) ; Gregor, Ingrid-Maria (DESY) ; Hamnett, Phlillip (DESY) ; Kleinwort, Claus (DESY) ; Morton, Alexander (DESY) et al.
EUTelescope is a modular, comprehensive software framework for the reconstruction of particle trajectories recorded with beam telescopes. Its modularity allows for a flexible usage of processors each fulfilling separate tasks of the reconstruction chain such as clustering, alignment and track fitting. [...]
arXiv:2011.10356.-
2020-09-15 - 25 p.
- Published in : JINST 15 (2020) P09020
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Transient Monte Carlo Simulations for the Optimisation and Characterisation of Monolithic Silicon Sensors
/ Ballabriga Sune, Rafael (CERN) ; Braach, Justus (Hamburg University (DE)) ; Buschmann, Eric (CERN) ; Campbell, Michael (CERN) ; Dannheim, Dominik (CERN) ; Dort, Katharina (Justus-Liebig-Universitaet Giessen (DE)) ; Huth, Lennart (Deutsches Elektronen-Synchrotron (DE)) ; Kremastiotis, Iraklis (KIT - Karlsruhe Institute of Technology (DE)) ; Kroeger, Jens (Ruprecht Karls Universitaet Heidelberg (DE)) ; Linssen, Lucie (CERN) et al.
An ever-increasing demand for high-performance silicon sensors requires complex sensor designs that are challenging to simulate and model. The combination of electrostatic finite element simulations with a transient Monte Carlo approach provides simultaneous access to precise sensor modelling and high statistics. [...]
CLICdp-Pub-2021-003.-
Geneva : CERN, 2021 - 16.
Fulltext: PDF;
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