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Radiation hardness of amorphous silicon particle sensors / Wyrsch, N (U. Neuchatel (main)) ; Miazza, C (U. Neuchatel (main)) ; Dunand, S (U. Neuchatel (main)) ; Ballif, C (U. Neuchatel (main)) ; Shah, A (U. Neuchatel (main)) ; Despeisse, M (CERN) ; Moraes, D (CERN) ; Powolny, F (CERN) ; Jarron, P (CERN)
Radiation tests of 32 $\mu \mathrm{m}$ thick hydrogenated amorphous silicon n–i–p diodes have been performed using a high-energy 24 GeV proton beam up to fluences of $2 \times 10^{16}$ protons/cm$^2$. The results are compared to irradiation of similar 1 $\mu \mathrm{m}$ and 32 $\mu \mathrm{m}$ thick n–i–p diodes using a proton beam of 405 keV at a fluence of $3 \times 10^{13}$ protons/cm$^2$. [...]
2006 - 4 p. - Published in : J. Noncryst. Solids 352 (2006) 1797-1800

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A novel low noise hydrogenated amorphous silicon pixel detector / Moraes, D ; Anelli, G ; Despeisse, M ; Dissertori, G ; Garrigos, A ; Jarron, P ; Kaplon, J ; Miazza, C ; Shah, A ; Viertel, Gert M et al.
Firsts results on particle detection using a novel silicon pixel detector are presented. The sensor consists of an array of 48 square pixels with 380 mum pitch based on a n-i-p hydrogenated amorphous silicon (a-Si:H) film deposited on top of a VLSI chip. [...]
2004 - Published in : J. Non-Cryst. Solids 338-340 (2004) 729-731

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Advanced Solid State Detector Technologies for Particle Detection / Moraes, Danielle ; Despeisse, M ; Dunand, S ; Jarron, P ; Johansen, K M ; Kaplon, J ; Miazza, C ; Shah, A ; Wyrsch, N
CERN, 2004 Published version from CERN: PDF;
In : 10th Workshop on Electronics for LHC and Future Experiments, Boston, MA, USA, 13 - 17 Sep 2004, pp.38-41 (CERN-2004-010)

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Characterization of 13 and 30 mum thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application / Despeisse, M (CERN) ; Anelli, G (CERN) ; Commichau, S C (Zurich, ETH) ; Dissertori, G (Zurich, ETH) ; Garrigos, A (CERN) ; Jarron, P (CERN) ; Miazza, C (Neuchatel U.) ; Moraes, D (CERN) ; Shah, A (Neuchatel U.) ; Wyrsch, N (Neuchatel U.) et al.
We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n-i-p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30mum thick a-Si:H films deposited on top of an ASIC containing a linear array of high- speed low-noise transimpedance amplifiers designed in a 0.25mum CMOS technology. [...]
2004 - Published in : Nucl. Instrum. Methods Phys. Res., A 518 (2004) 357-361
In : 9th Pisa Meeting on Advanced Detectors, La Biodola, Italy, 25 - 31 May 2003, pp.357-361 (v.518)

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A new concept of monolithic silicon pixel detectors : Hydrogenated amorphous silicon on ASIC / Anelli, G ; Commichau, S C ; Despeisse, M ; Dissertori, G ; Jarron, P ; Miazza, C ; Moraes, D ; Shah, A ; Viertel, Gert M ; Wyrsch, N
A new concept of a monolithic pixel radiation detector is presented. It is based on the deposition of a film of hydrogenated amorphous silicon (a-Si:H) on an Application Specific Integrated Circuit (ASIC) . [...]
2004 - Published in : Nucl. Instrum. Methods Phys. Res., A 518 (2004) 366-372

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