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Single-Event Effect Responses of CMOS Integrated Planar Multiturn Inductors in LC-Tank Oscillators Under Heavy-Ion Microbeam Irradiation / Adom-Bamfi, Gideon (Leuven U.) ; Biereigel, Stefan (CERN) ; Leroux, Paul (Leuven U.) ; Prinzie, Jeffrey (Leuven U.)
This article presents detailed measurements of a novel radiation effect caused by the sensitivity of on-chip spiral inductors to ionizing particles, leading to single-event frequency transients (SEFTs) in LC-tank oscillators. Quantitative experimental results from heavy-ion microbeam irradiation of two-turn and four-turn inductor samples are presented. [...]
2024 - 11 p. - Published in : IEEE Trans. Nucl. Sci. 71 (2024) 1380-1390

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Proton Direct Ionization Upsets at Tens of MeV / Coronetti, Andrea (CERN ; IES, Montpellier) ; García Alía, Rubén (CERN) ; Lucsanyi, David (CERN) ; Wang, Jialei (Leuven U.) ; Saigné, Frédéric (IES, Montpellier) ; Javanainen, Arto (Jyvaskyla U. ; Vanderbilt U. (main)) ; Leroux, Paul (Leuven U.) ; Prinzie, Jeffrey (Leuven U.)
Experimental monoenergetic proton single-event upset (SEU) cross sections of a 65-nm low core-voltage static random access memory (SRAM) were found to be exceptionally high not only at low energies (< 3 MeV), but also at energies $>$ 3 MeV and extending up to tens of MeV. The SEU cross Section from 20-MeV protons exceeds the 200-MeV proton SEU cross Section by almost a factor of 3. [...]
2023 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 70 (2023) 314-321 Fulltext: PDF;
In : 2022 IEEE Nuclear and Space Radiation Effects Conference, Provo, Utah, USA, 18 - 23 Jul 2022, pp.314-321

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lpGBT documentation : release
12 Aug 2024. - 359 p.

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Radiation-Tolerant All-Digital PLL/CDR with Varactorless LC DCO in 65 nm CMOS / Biereigel, Stefan (CERN ; Leuven U. ; Brandenburg Tech. U.) ; Kulis, Szymon (CERN) ; Moreira, Paulo (CERN) ; Kölpin, Alexander (Hamburg, Tech. U.) ; Leroux, Paul (Leuven U.) ; Prinzie, Jeffrey (Leuven U.)
This paper presents the first fully integrated radiation-tolerant All-Digital Phase-Locked Loop (PLL) and Clock and Data Recovery (CDR) circuit for wireline communication applications. Several radiation hardening techniques are proposed to achieve state-of-the-art immunity to SingleEvent Effects (SEEs) up to 62.5 MeV cm$^{2}$ mg$^{−1}$ as well as tolerance to the Total Ionizing Dose (TID) exceeding 1.5 Grad. The LC Digitally Controlled Oscillator (DCO) is implemented without MOS varactors, avoiding the use of a highly SEE sensitive circuit element. [...]
2021 - 16 p. - Published in : Electronics 10 (2021) 2741

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Radiation-Tolerant Digitally Controlled Ring Oscillator in 65-nm CMOS / Biereigel, Stefan (CERN ; Leuven U. ; Brandenburg Tech. U.) ; Kulis, Szymon (CERN) ; Leroux, Paul (Leuven U.) ; Moreira, Paulo (CERN) ; Prinzie, Jeffrey (Leuven U.)
This article presents a radiation-tolerant digitally controlled complementary metal–oxide–semiconductor (CMOS) ring oscillator design suitable for all-digital phase-locked loop (ADPLL) implementations. To address the challenges presented by harsh radiation environments, a wide tuning range oscillator architecture is presented with superior single-event effect (SEE) tolerance. [...]
2022 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 69 (2022) 17-25 Fulltext: PDF;

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Single-Event Effect Responses of Integrated Planar Inductors in 65-nm CMOS / Biereigel, Stefan (CERN ; Leuven U. ; Brandenburg Tech. U.) ; Kulis, Szymon (CERN) ; Leroux, Paul (Leuven U.) ; Moreira, Paulo (CERN) ; Kolpin, Alexander (Hamburg, Tech. U.) ; Prinzie, Jeffrey (Leuven U.)
This article describes a previously unreported single-event radiation effect in spiral inductors manufactured in a commercial CMOS technology when subjected to ionizing radiation. Inductors play a major role as the component determining the frequency of LC tank oscillators, which is why any radiation effect in these passive components can have a detrimental impact on the performance of clock generation circuits. [...]
2021 - 11 p. - Published in : IEEE Trans. Nucl. Sci. 68 (2021) 2587-2597 Fulltext: PDF;

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Study of SEU Sensitivity of SRAM-Based Radiation Monitors in 65-nm CMOS / Wang, Jialei (Leuven U.) ; Prinzie, Jeffrey (Leuven U.) ; Coronetti, Andrea (CERN ; Jyvaskyla U.) ; Thys, S (Leuven U.) ; García Alia, Rubén (CERN) ; Leroux, Paul (Leuven U.)
This article presents a static random access memory (SRAM)-based flexible radiation monitor. The monitor was fabricated in a 65-nm CMOS technology and it is designed as an application-specific integrated circuit, which comprises 768k bits SRAM cell matrix with individual power supply and a digital control core with a serial peripheral interface (SPI). [...]
2021 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 68 (2021) 913-920

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Assessment of Proton Direct Ionization for the Radiation Hardness Assurance of Deep Submicron SRAMs Used in Space Applications / Coronetti, Andrea (CERN ; Jyvaskyla U.) ; Alia, Ruben Garcia (CERN) ; Wang, Jialei (Leuven U.) ; Tali, Maris (CERN) ; Cecchetto, Matteo (CERN) ; Cazzaniga, Carlo (Rutherford) ; Javanainen, Arto (Jyvaskyla U. ; Vanderbilt U.) ; Saigne, Frederic (IES, Montpellier) ; Leroux, Paul (Leuven U.)
2021 - 12 p. - Published in : IEEE Trans. Nucl. Sci. 68 (2021) 937-948 fulltext from publisher: PDF;

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Radiation tolerant electronics / Leroux, Paul (ed.)
Basel : MDPI, 2019. - 210 p.

ebook (Open Access)

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10.

1.28 and 5.12 Gbps multi-channel twinax cable receiver ASICs for the ATLAS Inner Tracker Pixel Detector Upgrade / Chen, Chufeng (Southern Methodist U. ; Hua-Zhong Normal U.) ; Gong, Datao (Southern Methodist U.) ; Hou, Suen (Academia Sinica, Taiwan) ; Huang, Guangming (Hua-Zhong Normal U.) ; Huang, Xing (Southern Methodist U. ; Hua-Zhong Normal U.) ; Kulis, Szymon (CERN) ; Leroux, Paul (Leuven U.) ; Liu, Chonghan (Southern Methodist U.) ; Liu, Tiankuan (Southern Methodist U.) ; Moreira, Paulo (CERN) et al.
We present two prototypes of a gigabit transceiver ASIC, GBCR1 and GBCR2, both designed in a 65-nm CMOS technology for the ATLAS Inner Tracker Pixel Detector readout upgrade. The first prototype, GBCR1, has four upstream receiver channels and one downstream transmitter channel with pre-emphasis. [...]
arXiv:2008.09738.- 2020-11-21 - 7 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 981 (2020) 164439 Fulltext: PDF;
In : 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164439

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Voir aussi: noms d'auteurs similaires
1	LeRoux, P R
23	Leroux, P
1	Leroux, P J
3	Leroux, P.
1	Leroux, Philippe
3	Leroux, Pierre

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