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1.
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LPNHE-FBK Thin n-on-p Pixel Sensors for HL-LHC Upgrade and Beyond
/ Calderini, G (Paris U., VI-VII) ; Bomben, M (Paris U., VI-VII) ; Boscardin, M (Fond. Bruno Kessler, Povo) ; Bosisio, L (INFN, Trieste ; Trieste U.) ; Borghi, G (Fond. Bruno Kessler, Povo) ; Camacho, R (Paris U., VI-VII) ; Crescioli, F (Paris U., VI-VII) ; Betta, G F Dalla (Trento U. ; INFN, Trento) ; Ficorella, F (Fond. Bruno Kessler, Povo) ; Giacomini, G (Brookhaven) et al.
In view of the LHC upgrade phase towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. [...]
2021 - 7 p.
- Published in : JPS Conf. Proc. 34 (2021) 010021
Fulltext: PDF;
In : 29th International Workshop on Vertex Detectors, Virtual, Japan, 5 - 8 Oct 2020, pp.010021
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2.
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Active-edge FBK-INFN-LPNHE thin n-on-p pixel sensors for the upgrade of the ATLAS Inner Tracker
/ Calderini, G (Paris U., VI-VII) ; Bomben, M (Paris U., VI-VII) ; D' Eramo, L (Paris U., VI-VII) ; Ducourthial, A (Paris U., VI-VII) ; Luise, I (Paris U., VI-VII) ; Marchiori, G (Paris U., VI-VII) ; Boscardin, G (INFN, Trento ; Fond. Bruno Kessler, Povo) ; Ronchin, S (INFN, Trento ; Fond. Bruno Kessler, Povo) ; Zorzi, N (INFN, Trento ; Fond. Bruno Kessler, Povo) ; Bosisio, L (INFN, Trieste ; Trieste U.) et al.
In view of the LHC upgrade for the High Luminosity phase (HL-LHC), the ATLAS experiment plans to replace the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. [...]
Elsevier , 2019 - 2 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 936 (2019) 638-639
In : Frontier Detectors for Frontier Physics: XIV Pisa Meeting on Advanced Detectors, La Biodola, Isola D'elba, Italy, 27 May - 2 Jun 2018, pp.638-639
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3.
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Performance of thin planar n-on-p silicon pixels after HL-LHC radiation uences
/ Ducourthial, A. (CNRS-LPNHE) ; Bomben, M. (CNRS-LPNHE) ; Calderini, G. (CNRS-LPNHE) ; Camacho, R. (CNRS-LPNHE) ; D'Eramo, L. (CNRS-LPNHE) ; Luise, I. (CNRS-LPNHE) ; Marchiori, G. (CNRS-LPNHE) ; Boscardin, M. (FBK, TIFPA-INFN) ; Bosisio, L. (INFN Trieste) ; Darbo, G. (INFN Genova) et al.
The tracking detector of ATLAS, one of the experiments at the Large Hadron Collider (LHC), will be upgraded in 2024-2026 to cope with the challenging environment conditions of the High Luminosity LHC (HL-LHC). The LPNHE, in collaboration with FBK and INFN, has produced 130~μm thick n−on−p silicon pixel sensors which can withstand the expected large particle fluences at HL- LHC, while delivering data at high rate with excellent hit efficiency. [...]
AIDA-2020-PUB-2020-003; arXiv:1810.07279.-
Geneva : CERN, 2020 - 11 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 927 (2019) 219-229
Fulltext: PDF;
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4.
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Radiation hardness of different silicon materials after high-energy electron irradiation
/ Dittongo, S (Trieste U. ; INFN, Trieste) ; Bosisio, L (Trieste U. ; INFN, Trieste) ; Ciacchi, M (Trieste U.) ; Contarato, D (Hamburg U., Inst. Exp. Phys. II) ; D'Auria, G (Sincrotrone Trieste) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Lindstrom, G (Hamburg U., Inst. Exp. Phys. II)
The radiation hardness of diodes fabricated on standard and diffusion-oxygenated float-zone, Czochralski and epitaxial silicon substrates has been compared after irradiation with 900 MeV electrons up to a fluence of $2.1 \times 10^{15} \ \rm{e} / cm^2$. The variation of the effective dopant concentration, the current related damage constant $\alpha$ and their annealing behavior, as well as the charge collection efficiency of the irradiated devices have been investigated..
2004 - 7 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 530 (2004) 110-116
In : 6th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Florence, Italy, 29 Sep - 1 Oct 2003, pp.110-116
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5.
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First Measurements of Beam Backgrounds at SuperKEKB
/ Vahsen, S.E. (University of Hawaii) ; Lewis, P.M. (University of Hawaii) ; Jaegle, I. (University of Florida) ; Nakayama, H. (KEK) ; Aloisio, A. (University of Naples Federico II & INFN Napoli) ; Ameli, F. (INFN Roma) ; Barrett, M. (Wayne State University) ; Beaulieu, A. (University of Victoria) ; Bosisio, L. (University of Trieste & INFN) ; Branchini, P. (INFN Roma) et al.
The high design luminosity of the SuperKEKB electron-positron collider is expected to result in challenging levels of beam-induced backgrounds in the interaction region. Properly simulating and mitigating these backgrounds is critical to the success of the Belle~II experiment. [...]
AIDA-2020-PUB-2018-005.-
Geneva : CERN, 2018
- Published in : Nucl. Instrum. Methods Phys. Res., Sect. A
Fulltext: PDF;
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6.
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The associative memory for the self-triggered SLIM5 silicon telescope
/ Batignani, G (U. Pisa (main) ; INFN, Pisa) ; Bettarini, S (U. Pisa (main) ; INFN, Pisa) ; Calderini, G (U. Pisa (main) ; INFN, Pisa) ; Cenci, R (U. Pisa (main) ; INFN, Pisa) ; Cervelli, A (U. Pisa (main) ; INFN, Pisa) ; Crescioli, F (U. Pisa (main) ; INFN, Pisa) ; Dell'Orso, M (U. Pisa (main) ; INFN, Pisa) ; Forti, F (U. Pisa (main) ; INFN, Pisa) ; Giannetti, P (INFN, Pisa) ; Giorgi, M A (U. Pisa (main) ; INFN, Pisa) et al.
Modern experiments search for extremely rare processes hidden in much larger background levels. As the experiment complexity, the accelerator backgrounds and luminosity increase we need increasingly exclusive selections to efficiently select the rare events inside the huge background. [...]
2009 - 5 p.
- Published in : 10.1109/NSSMIC.2008.4774945
In : 2008 IEEE Nuclear Science Symposium, Medical Imaging Conference and 16th Room Temperature Semiconductor Detector Workshop, Dresden, Germany, 19 - 25 Oct 2008, pp.2765-2769
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7.
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Thin and edgeless sensors for ATLAS pixel detector upgrade
/ Ducourthial, Audrey (Paris U., VI-VII) ; Bomben, Marco (Paris U., VI-VII) ; Calderini, Giovanni (Paris U., VI-VII) ; D'Eramo, Louis (Paris U., VI-VII) ; Marchiori, Giovanni (Paris U., VI-VII) ; Luise, Ilaria (Paris U., VI-VII) ; Bagolini, Alvise (Fond. Bruno Kessler, Povo) ; Boscardin, Maurizio (Fond. Bruno Kessler, Trento) ; Bosisio, Luciano (INFN, Trieste ; Trieste U.) ; Darbo, Giovanni (INFN, Genoa) et al.
To cope with the harsh environment foreseen at the high luminosity conditions of HL- LHC, the ATLAS pixel detector has to be upgraded to be fully efficient with a good granularity, a maximized geometrical acceptance and an high read out rate. LPNHE, FBK and INFN are involved in the development of thin and edgeless planar pixel sensors in which the insensitive area at the border of the sensor is minimized thanks to the active edge technology. [...]
arXiv:1710.03557.-
2017-12-19 - 10 p.
- Published in : JINST 12 (2017) C12038
In : The 11th International conference in Position Sensitive Detectors, Milton Keynes, United Kingdom, 3 - 8 Sep 2017, pp.C12038
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8.
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Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade
/ Calderini, G (Paris U., VI-VII ; Pisa U.) ; Bagolini, A (Fond. Bruno Kessler, Povo) ; Beccherle, R (INFN, Pisa) ; Bomben, M (Paris U., VI-VII) ; Boscardin, M (Fond. Bruno Kessler, Povo) ; Bosisio, L (Trieste U. ; INFN, Trieste) ; Chauveau, J (Paris U., VI-VII) ; Giacomini, G (Fond. Bruno Kessler, Povo) ; La Rosa, A (Geneva U.) ; Marchiori, G (Paris U., VI-VII) et al.
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. [...]
2016 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 831 (2016) 133-136
In : 10th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Xi'an, China, 25 - 29 Sep 2015, pp.133-136
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9.
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Performance of active edge pixel sensors
/ Bomben, Marco (Paris U., VI-VII) ; Ducourthial, Audrey (Paris U., VI-VII) ; Bagolini, Alvise (Fond. Bruno Kessler, Povo) ; Boscardin, Maurizio (Fond. Bruno Kessler, Trento) ; Bosisio, Luciano (INFN, Trieste ; Trieste U.) ; Calderini, Giovanni (Paris U., VI-VII) ; D'Eramo, Louis (Paris U., VI-VII) ; Giacomini, Gabriele (Brookhaven ; FBK, CIT, Trento) ; Marchiori, Giovanni (Paris U., VI-VII) ; Zorzi, Nicola (Fond. Bruno Kessler, Trento) et al.
To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the insensitive area at the border of the sensor thanks to an ion etched trench which avoids the crystal damage produced by the standard mechanical dicing process. [...]
arXiv:1702.01709.-
2017-05-09 - 14 p.
- Published in : JINST 12 (2017) P05006
Fulltext: PDF; Preprint: PDF;
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10.
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Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade
/ Bomben, Marco (Paris, LPTHE) ; Bagolini, Alvise (Fond. Bruno Kessler, Povo) ; Boscardin, Maurizio (Fond. Bruno Kessler, Povo) ; Bosisio, Luciano (INFN, Trieste ; Trieste U.) ; Calderini, Giovanni (Paris U., VI-VII) ; Chauveau, Jacques (Paris U., VI-VII) ; Ducourthial, Audrey (Paris U., VI-VII) ; Giacomini, Gabriele (Fond. Bruno Kessler, Povo) ; Marchiori, Giovanni (Paris U., VI-VII) ; Zorzi, Nicola (Fond. Bruno Kessler, Povo)
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. [...]
arXiv:1609.02128.-
2016-10-06 - 4 p.
- Published in : 10.1109/NSSMIC.2015.7581991
Fulltext: PDF; External link: Preprint
In : 2015 IEEE Nuclear Science Symposium and Medical Imaging Conference, San Diego, CA, USA, 31 Oct - 7 Nov 2015
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