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CERN Accelerating science

Article
Title Ultra-Large Silicon Diode for Characterizing Low-Intensity Radiation Environments
Author(s) Biłko, Kacper (CERN ; Jean Monnet U.) ; García Alía, Rubén (CERN) ; Girard, Sylvain (Jean Monnet U. ; IUF, Paris) ; Barbero, Mario Sacristan (CERN) ; Cecchetto, Matteo (CERN) ; Belanger-Champagne, Camille (TRIUMF) ; Brucoli, Matteo (CERN) ; Danzeca, Salvatore (CERN) ; Hands, Alex (CERN) ; Holgado, Pedro Martín (Seville U.) ; Garcia, Yolanda Morilla (Seville U.) ; Maestre, Amor Romero (Seville U.) ; Sebban, Marc (Jean Monnet U.) ; Widorski, Markus (CERN)
Publication 2024
Number of pages 7
In: IEEE Trans. Nucl. Sci. 71 (2024) 770-776
DOI 10.1109/TNS.2023.3337839
Subject category Detectors and Experimental Techniques
Accelerator/Facility, Experiment FLUKA
Geant4
Abstract We present applications of a large commercial silicon diode (50 cm $^{2}\,\,\times 500\,\,{\mu }\text{m}$ ) for monitoring low-intensity radiation fields, together with benchmarks via Monte Carlo simulations. After energy calibration with monoenergetic proton and alpha beams in the 2–8-MeV range, we show that the detector is capable of measuring atmospheric radiation at the ground level, not only in terms of a total number of events but also through their energy deposition distribution. Focusing on the atmospheric-like neutron spectrum, we prove that the diode detection cross Section is more than five orders of magnitude larger with respect to static random access memory (SRAM)-based solutions and highlight the potential use cases in the accelerator’s radiation environment.
Copyright/License publication: © 2023-2024 The Authors (License: CC-BY-4.0)

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 Record created 2024-06-15, last modified 2024-09-10


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