Home > Ultra-Large Silicon Diode for Characterizing Low-Intensity Radiation Environments |
Article | |
Title | Ultra-Large Silicon Diode for Characterizing Low-Intensity Radiation Environments |
Author(s) | Biłko, Kacper (CERN ; Jean Monnet U.) ; García Alía, Rubén (CERN) ; Girard, Sylvain (Jean Monnet U. ; IUF, Paris) ; Barbero, Mario Sacristan (CERN) ; Cecchetto, Matteo (CERN) ; Belanger-Champagne, Camille (TRIUMF) ; Brucoli, Matteo (CERN) ; Danzeca, Salvatore (CERN) ; Hands, Alex (CERN) ; Holgado, Pedro Martín (Seville U.) ; Garcia, Yolanda Morilla (Seville U.) ; Maestre, Amor Romero (Seville U.) ; Sebban, Marc (Jean Monnet U.) ; Widorski, Markus (CERN) |
Publication | 2024 |
Number of pages | 7 |
In: | IEEE Trans. Nucl. Sci. 71 (2024) 770-776 |
DOI | 10.1109/TNS.2023.3337839 |
Subject category | Detectors and Experimental Techniques |
Accelerator/Facility, Experiment | FLUKA Geant4 |
Abstract | We present applications of a large commercial silicon diode (50 cm $^{2}\,\,\times 500\,\,{\mu }\text{m}$ ) for monitoring low-intensity radiation fields, together with benchmarks via Monte Carlo simulations. After energy calibration with monoenergetic proton and alpha beams in the 2–8-MeV range, we show that the detector is capable of measuring atmospheric radiation at the ground level, not only in terms of a total number of events but also through their energy deposition distribution. Focusing on the atmospheric-like neutron spectrum, we prove that the diode detection cross Section is more than five orders of magnitude larger with respect to static random access memory (SRAM)-based solutions and highlight the potential use cases in the accelerator’s radiation environment. |
Copyright/License | publication: © 2023-2024 The Authors (License: CC-BY-4.0) |