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Author(s)
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Dingfelder, J (Bonn U.) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Berdalovic, I (CERN) ; Bespin, C (Bonn U.) ; Breugnon, P (Marseille, CPPM) ; Caicedo, I (Bonn U.) ; Cardella, R (CERN) ; Degerli, Y (IRFU, Saclay) ; Flores Sanz de Acedo, L (CERN) ; Guilloux, F (IRFU, Saclay) ; Habib, A (Marseille, CPPM) ; Hirono, T (Bonn U.) ; Hemperek, T (Bonn U.) ; Hügging, F (Bonn U.) ; Krüger, H (Bonn U.) ; Kugathasan, T (CERN) ; Moustakas, K (Bonn U.) ; Pangaud, P (Marseille, CPPM) ; Pernegger, H (CERN) ; Piro, F (CERN) ; Pohl, D -L (Bonn U.) ; Riedler, P (CERN) ; Rozanov, A (Marseille, CPPM) ; Rymaszewski, P (Bonn U.) ; Schwemling, P (IRFU, Saclay) ; Snoeys, W (CERN) ; Wang, T (Bonn U.) ; Wermes, N (Bonn U.) ; Zhang, S (Bonn U.) |
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Abstract
| Depleted Monolithic Active Pixel Sensors (DMAPS) are monolithic pixel detectors with high-resistivity substrates designed for use in high-rate and high-radiation environments. They are produced in commercial CMOS processes, resulting in relatively low production costs and short turnaround times, and offer a low material budget. LF-Monopix1 and TJ-Monopix1 are large DMAPS prototypes produced in 150 nm LFoundry and 180 nm TowerJazz technology, respectively, that follow two different design concepts regarding the charge collection electrode. Prototypes of both development lines have been extensively tested and characterized over the last years. The second-generation Monopix prototypes, Monopix2, were recently produced. They were designed to address the shortcomings of their predecessors, in particular related to radiation hardness and cross talk, and further improve upon their performance. The latest measurements with LF-Monopix1 and TJ-Monopix1 concerning hit efficiency, depletion, and radiation hardness as well as the initial test results of the new Monopix2 prototypes are presented. |