主頁 > Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180 nm CMOS technology |
Article | |
Report number | arXiv:2301.13638 |
Title | Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180 nm CMOS technology |
Related title | Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180$\,$nm CMOS technology |
Author(s) | Bespin, Christian (Bonn U.) ; Caicedo, Ivan (Bonn U.) ; Dingfelder, Jochen Christian (Bonn U.) ; Hemperek, Tomasz (Bonn U. ; DECTRIS Baden) ; Hirono, Toko (Bonn U. ; DESY) ; Hügging, Fabian (Bonn U.) ; Krüger, Hans (Bonn U.) ; Moustakas, Konstantinos (Bonn U. ; PSI, Villigen) ; Pernegger, Heinz (CERN) ; Riedler, Petra (CERN) ; Schall, Lars (Bonn U.) ; Snoeys, Walter (CERN) ; Wermes, Norbert (Bonn U.) |
Publication | 2023 |
Imprint | 2023-01-31 |
Number of pages | 8 |
Note | Conference proceedings for PIXEL2022 conference, submitted to PoS |
In: | PoS Pixel2022 (2023) pp.080 |
In: | 10th International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.080 |
DOI | 10.22323/1.420.0080 |
Subject category | physics.ins-det ; Detectors and Experimental Techniques |
Abstract | Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has been designed in a 180$\,$nm Tower process with depletion of the sensor material and a column-drain readout architecture. The latest iteration, TJ-Monopix2, features a large 2$\,$cm x 2$\,$cm matrix consisting of 512 x 512 pixels with 33.04$\,$um pitch. A small collection electrode design aims at low power consumption and low noise while the radiation tolerance for high-energy particle detector applications needs extra attention. With a goal to reach radiation tolerance to levels of $10^{15}\,1\,$MeV n$_\text{eq}\,$cm$^{-2}$ of NIEL damage a modification of the standard process has been implemented by adding a low-dosed n-type silicon implant across the pixel in order to allow for homogeneous depletion of the sensor volume. Recent lab measurements and beam tests were conducted for unirradiated modules to study electrical characteristics and hit detection efficiency. |
Copyright/License | © 2023-2024 The author(s) (License: CC-BY-NC-ND-4.0) preprint: (License: CC BY-NC-ND 4.0) |