| Article | |
| Title | Registration of the transition radiation with GaAs detector: Data/MC comparison |
| Author(s) | Alozy, J (CERN) ; Belyaev, N ; Bergmann, B L (IEAP CTU, Prague) ; Billoud, T R V (IEAP CTU, Prague) ; Broulim, P (Pilsen, Coll. Mech. Elect. Eng.) ; Burian, P (IEAP CTU, Prague ; Pilsen, Coll. Mech. Elect. Eng.) ; Campbell, M (CERN) ; Chelkov, G (Dubna, JINR) ; Cherry, M (Louisiana State U.) ; Dachs, F (CERN) ; Doronin, S (Moscow Phys. Eng. Inst.) ; Filippov, K (Moscow Phys. Eng. Inst.) ; Fusco, P (INFN, Bari) ; Gargano, F (Bari U.) ; Heijne, E H M (CERN ; IEAP CTU, Prague) ; Konovalov, S (LPI, Moscow (main)) ; Cudie, X Llopart (CERN) ; Loparco, F (INFN, Bari ; Bari U.) ; Mazziotta, M N (Bari U.) ; Meduna, L (IEAP CTU, Prague) ; Pernegger, H (CERN) ; Ponomarenko, D (Moscow Phys. Eng. Inst.) ; Pospisil, S (IEAP CTU, Prague) ; Rastorguev, D (Dubna, JINR) ; Rembser, C (CERN) ; Romaniouk, A (Moscow Phys. Eng. Inst.) ; Savchenko, A A (Moscow Phys. Eng. Inst.) ; Schioppa, E J (Salento U.) ; Smirnov, S (Moscow Phys. Eng. Inst.) ; Smirnov, Y (Moscow Phys. Eng. Inst.) ; Smolyanskiy, P (IEAP CTU, Prague) ; Spinelli, P (INFN, Bari) ; Strikhanov, M (Moscow Phys. Eng. Inst.) ; Teterin, P (Moscow Phys. Eng. Inst.) ; Tikhomirov, V (Lebedev Inst.) ; Vorobev, K (Moscow Phys. Eng. Inst.) ; Zhukov, K (Lebedev Inst.) |
| Publication | 2020 |
| Number of pages | 8 |
| In: | J. Phys.: Conf. Ser. 1690 (2020) 012041 |
| In: | 5th International Conference on Particle Physics and Astrophysics (ICPPA), pp.012041 |
| DOI | 10.1088/1742-6596/1690/1/012041 |
| Subject category | Detectors and Experimental Techniques |
| Abstract | New developments of pixel detectors based on GaAs sensors offer effective registration of the transition radiation (TR) X-rays and perform simultaneous measurements of their energies and emission angles. This unique feature opens new possibilities for particle identification on the basis of maximum available information about generated TR photons. Results of studies of TR energy-angular distributions using a 500 |j.m thick GaAs sensor attached to a Timepix3 chip are presented. Measurements, analysis techniques and a comparison with Monte Carlo (MC) simulations are described and discussed. |
| Copyright/License | CC-BY-3.0 |
Corresponding record in: Inspire
Zapis kreiran 2021-02-02, zadnja izmjena 2021-02-09