| Accueil > Radiation hardness of amorphous silicon particle sensors |
| Published Articles | |
| Title | Radiation hardness of amorphous silicon particle sensors |
| Related title | Radiation hardness of amorphous silicon particle sensors |
| Author(s) | Wyrsch, N (U. Neuchatel (main)) ; Miazza, C (U. Neuchatel (main)) ; Dunand, S (U. Neuchatel (main)) ; Ballif, C (U. Neuchatel (main)) ; Shah, A (U. Neuchatel (main)) ; Despeisse, M (CERN) ; Moraes, D (CERN) ; Powolny, F (CERN) ; Jarron, P (CERN) |
| Publication | 2006 |
| Number of pages | 4 |
| Note | 21st International Conference on Amorphous and Nanocrystalline Semiconductors 4-9 September 2005, Lisbon, Portugal |
| In: | J. Noncryst. Solids 352 (2006) 1797-1800 |
| DOI | 10.1016/j.jnoncrysol.2005.10.035 |
| Subject category | Detectors and Experimental Techniques ; Detectors and Experimental Techniques |
| Accelerator/Facility, Experiment | CERN SPS |
| Abstract | Radiation tests of 32 $\mu \mathrm{m}$ thick hydrogenated amorphous silicon n–i–p diodes have been performed using a high-energy 24 GeV proton beam up to fluences of $2 \times 10^{16}$ protons/cm$^2$. The results are compared to irradiation of similar 1 $\mu \mathrm{m}$ and 32 $\mu \mathrm{m}$ thick n–i–p diodes using a proton beam of 405 keV at a fluence of $3 \times 10^{13}$ protons/cm$^2$. All samples exhibited a drop of the photoconductivity and an increase in the dark leakage current under both high- and low-energy proton irradiation. An almost full recovery of the device performance was observed after a subsequent thermal annealing. |