Abstract
| The introductory part of this bachelor’s degree work discusses semiconductor detectors (almost exclusive silicon semiconductor detectors) from the point of view of properties of the suitable material, behaviour of charge carriers (electrons and holes), general principles, and properties. The second part studies silicon drift detectors, both with linear and radial geometry. This part includes general principles, advantages and disadvantages. The third part offers overview of the detector complex ALICE and involved subdetectors. It also contains motivation for constructing such sophisticated device. From this part, the abbreviation SDD will be used only for the linear silicon drift detector developed for ALICE. The fourth part deals with parameters of the inner tracking system and two of its three subdetectors - silicon pixel detector and silicon microstrip detector. In the fifth part, the reader is familiarized with the design and properties of the silicon drift detector developed for ALICE, with placement, prototype test results, electronics, trigger, cabling, data reduction and cooling. The closing sixth part includes information about my work on PCI-VME interface. It was my part of the work at the apparatus for testing SDDs. |