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16 pages, 6775 KiB  
Communication
Instances of Safety-Related Advances in Hydrogen as Regards Its Gaseous Transport and Buffer Storage and Its Solid-State Storage
by Farida Lamari, Benno Weinberger, Patrick Langlois and Daniel Fruchart
Hydrogen 2024, 5(3), 387-402; https://doi.org/10.3390/hydrogen5030022 - 4 Jul 2024
Cited by 3 | Viewed by 1189
Abstract
As part of the ongoing transition from fossil fuels to renewable energies, advances are particularly expected in terms of safe and cost-effective solutions. Publicising instances of such advances and emphasising global safety considerations constitute the rationale for this communication. Knowing that high-strength steels [...] Read more.
As part of the ongoing transition from fossil fuels to renewable energies, advances are particularly expected in terms of safe and cost-effective solutions. Publicising instances of such advances and emphasising global safety considerations constitute the rationale for this communication. Knowing that high-strength steels can prove economically relevant in the foreseeable future for transporting hydrogen in pipelines by limiting the pipe wall thickness required to withstand high pressure, one advance relates to a bench designed to assess the safe transport or renewable-energy-related buffer storage of hydrogen gas. That bench has been implemented at the technology readiness level TRL 6 to test initially intact, damaged, or pre-notched 500 mm-long pipe sections with nominal diameters ranging from 300 to 900 mm in order to appropriately validate or question the use of reputedly satisfactory predictive models in terms of hydrogen embrittlement and potential corollary failure. The other advance discussed herein relates to the reactivation of a previously fruitful applied research into safe mass solid-state hydrogen storage by magnesium hydride through a new public–private partnership. This latest development comes at a time when markets have started driving the hydrogen economy, bearing in mind that phase-change materials make it possible to level out heat transfers during the absorption/melting and solidification/desorption cycles and to attain an overall energy efficiency of up to 80% for MgH2-based compacts doped with expanded natural graphite. Full article
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<p>Influence of temperature on the lower (LFL) and upper (UFL) flammability limits for hydrogen and methane, respectively [<a href="#B28-hydrogen-05-00022" class="html-bibr">28</a>].</p>
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<p>MIE calculated (Equations (2) and (3) [<a href="#B22-hydrogen-05-00022" class="html-bibr">22</a>]) and experimental [<a href="#B22-hydrogen-05-00022" class="html-bibr">22</a>,<a href="#B29-hydrogen-05-00022" class="html-bibr">29</a>,<a href="#B30-hydrogen-05-00022" class="html-bibr">30</a>] as a function of hydrogen concentration in air [<a href="#B31-hydrogen-05-00022" class="html-bibr">31</a>].</p>
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<p>Visibility of hydrogen flames: (<b>a</b>) light-duty vehicle burn test [<a href="#B32-hydrogen-05-00022" class="html-bibr">32</a>]; (<b>b</b>) space shuttle launch [<a href="#B33-hydrogen-05-00022" class="html-bibr">33</a>].</p>
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<p>Analysis of the HIAD database in percentages of the events initiated by hydrogen or non-hydrogen systems (outer circle) and those related to different consequences (the inner circle) [<a href="#B38-hydrogen-05-00022" class="html-bibr">38</a>].</p>
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<p>Types of defects on pipelines: (<b>a</b>) dents; (<b>b</b>) gouges; (<b>c</b>) welding defects; (<b>d</b>) corrosion.</p>
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<p>(<b>a</b>) 3D cross-section of the test cell; (<b>b</b>) mobile hood and air-extraction duct surrounding the test cell during testing under hydrogen.</p>
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<p>Overall diagram of the test bench.</p>
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<p>Hydrogen impact on tensile properties (red curves) as compared to air (blue curves) and nitrogen gas (green curves).</p>
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<p>Burst DN 300 pipe section still mounted on the test cell (<b>a</b>) and removed (<b>b</b>).</p>
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<p>Number of scientific reviews per year published along the 20 past years dealing with hydrides (black), intermetallic systems (blue), or, more specifically, magnesium-based hydrides only (red) (source Scopus) [<a href="#B49-hydrogen-05-00022" class="html-bibr">49</a>].</p>
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<p>Equilibrium diagram of the system Mg + H<sub>2</sub> ↔ MgH<sub>2</sub> showing a melting temperature T<sub>f</sub> of the PCM intermediate between the absorption (T<sub>abs</sub>) and desorption (T<sub>des</sub>) temperatures of the compacts.</p>
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13 pages, 3277 KiB  
Article
Double-Cycle Alternating-Flow Diode Pumped Potassium Vapor Laser
by Songyang Liu, Rongqing Tan, Wenning Xu, Fangjin Ning and Zhiyong Li
Photonics 2024, 11(5), 391; https://doi.org/10.3390/photonics11050391 - 23 Apr 2024
Viewed by 831
Abstract
A novel double-cycle alternating-flow diode-pumped potassium vapor laser is proposed, theoretically modeled and simulated. The results show that the optical-to-optical efficiency of the laser increases with increasing gas flow rates, although at high flow rates the rate of increase in efficiency decreases. The [...] Read more.
A novel double-cycle alternating-flow diode-pumped potassium vapor laser is proposed, theoretically modeled and simulated. The results show that the optical-to-optical efficiency of the laser increases with increasing gas flow rates, although at high flow rates the rate of increase in efficiency decreases. The optical-to-optical efficiency reaches 74.8% at a pump power density of 30 kW/cm2 and a gas flow rate of 50 m/s. The optical-to-optical efficiency of the laser is greater with a narrow linewidth pump and high buffer gas pressure. The optical-to-optical efficiency of a flow gas cell is higher than that of a static gas cell. There is an optimal gas cell length that provides the highest optical-to-optical efficiency. At higher pump power densities, higher flow rates are required to obtain higher optical-to-optical efficiencies. Full article
(This article belongs to the Section Lasers, Light Sources and Sensors)
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<p>Schematics of the laser system with the gain medium under (<b>a</b>) clockwise and (<b>b</b>) counterclockwise flow.</p>
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<p>Schematic of the optical part of the K-DPAL.</p>
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<p>Flowchart of the laser output power algorithm.</p>
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<p>Relationships between gas flow rate, optical-to-optical efficiency, and maximum gain zone temperature.</p>
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<p>Relationships between optical-to-optical efficiency and pump linewidth.</p>
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<p>Relationships between optical-to-optical efficiency and helium pressure in flowing and static gain media.</p>
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<p>Relationships between optical-to-optical efficiency and gain zone length in flowing and static gain media.</p>
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<p>Relationships between optical-to-optical efficiency and gas flow rate at different pump power densities.</p>
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20 pages, 9159 KiB  
Article
Petrogenesis of the Newly Discovered Neoproterozoic Adakitic Rock in Bure Area, Western Ethiopia Shield: Implication for the Pan-African Tectonic Evolution
by Junsheng Jiang, Wenshuai Xiang, Peng Hu, Yulin Li, Fafu Wu, Guoping Zeng, Xinran Guo, Zicheng Zhang and Yang Bai
Minerals 2024, 14(4), 408; https://doi.org/10.3390/min14040408 - 16 Apr 2024
Cited by 1 | Viewed by 1051
Abstract
The Neoproterozoic Bure adakitic rock in the western Ethiopia shield is a newly discovered magmatic rock type. However, the physicochemical conditions during its formation, and its source characteristics are still not clear, restricting a full understanding of its petrogenesis and geodynamic evolution. In [...] Read more.
The Neoproterozoic Bure adakitic rock in the western Ethiopia shield is a newly discovered magmatic rock type. However, the physicochemical conditions during its formation, and its source characteristics are still not clear, restricting a full understanding of its petrogenesis and geodynamic evolution. In this study, in order to shed light on the physicochemical conditions during rock formation and provide further constraints on the petrogenesis of the Bure adakitic rock, we conduct electron microprobe analysis on K-feldspar, plagioclase, and biotite. Additionally, we investigate the trace elements and Hf isotopes of zircon, and the Sr-Nd isotopes of the whole rock. The results show that the K-feldspar is orthoclase (Or = 89.08~96.37), the plagioclase is oligoclase (Ab = 74.63~85.99), and the biotite is magnesio-biotite. Based on the biotite analysis results, we calculate that the pressure during rock formation was 1.75~2.81 kbar (average value of 2.09 kbar), representing a depth of approximately 6.39~10.2 km (average value of 7.60 km). The zircon thermometer yields a crystallization temperature of 659~814 °C. Most of the (Ce/Ce*)D values in the zircons plotted above the Ni-NiO oxygen buffer pair, and the calculated magmatic oxygen fugacity (logfO2) values vary from −18.5 to −4.9, revealing a relatively high magma oxygen fugacity. The uniform contents of FeO, MgO, and K2O in the biotite suggest a crustal magma source for the Bure adakitic rock. The relatively low (87Sr/86Sr)i values of 0.70088 to 0.70275, positive εNd(t) values of 3.26 to 7.28, together with the positive εHf(t) values of 7.64~12.99, suggest that the magma was sourced from a Neoproterozoic juvenile crust, with no discernable involvement of a pre-Neoproterozoic continental crust, which is coeval with early magmatic stages in the Arabian Nubian Shield elsewhere. Additionally, the mean Nd model ages demonstrate an increasing trend from the northern parts (Egypt, Sudan, Afif terrane of Arabia, and Eritrea and northern Ethiopia; 0.87 Ga) to the central parts (Western Ethiopia shield; 1.03 Ga) and southern parts (Southern Ethiopia Shield, 1.13 Ga; Kenya, 1.2 Ga) of the East African Orogen, which indicate an increasing contribution of pre-Pan-African crust towards the southern part of the East African Orogen. Based on the negative correlation between MgO and Al2O3 in the biotite, together with the Lu/Hf-Y and Yb-Y results of the zircon, we infer that the Bure adakitic rock was formed in an arc–arc collision orogenic environment. Combining this inference with the whole rock geochemistry and U-Pb age of the Bure adakitic rock, we further propose that the rock is the product of thickened juvenile crust melting triggered by the Neoproterozoic Pan-African Orogeny. Full article
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<p>Geological map of the Arabian-Nubian Shield, northeast Africa (after [<a href="#B14-minerals-14-00408" class="html-bibr">14</a>]).</p>
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<p>Sketch of the regional geology of the western Ethiopian terrain (after [<a href="#B15-minerals-14-00408" class="html-bibr">15</a>]).</p>
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<p>Hand specimen photograph (<b>a</b>) and microphotograph (<b>b</b>) for the Bure adakitic rock. Qtz—quartz; Bt—biotite; Kfs—K-feldspar.</p>
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<p>Ternary classification diagram for feldspar (<b>a</b>), [<a href="#B36-minerals-14-00408" class="html-bibr">36</a>]); Mg–(Al<sup>Ⅵ</sup> + Fe<sup>3+</sup> + Ti)–(Fe<sup>2+</sup> + Mn) classification diagram for biotite (<b>b</b>), [<a href="#B37-minerals-14-00408" class="html-bibr">37</a>]).</p>
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<p>Electron microprobe line profile analysis of K-feldspar (<b>a</b>,<b>b</b>), plagioclase (<b>c</b>,<b>d</b>) and biotite (<b>e</b>,<b>f</b>) for the Bure adakitic rock.</p>
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<p>Diagram of the chemical variation of Al<sub>2</sub>O<sub>3</sub> vs. MgO in the biotite.</p>
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<p>Chondrite-normalized REE patterns (<b>a</b>) and Ce/Ce* vs. Sm<sub>N</sub>/La<sub>N</sub> (<b>b</b>); [<a href="#B41-minerals-14-00408" class="html-bibr">41</a>]). The Chondrite data for the normalization and plotting are from [<a href="#B46-minerals-14-00408" class="html-bibr">46</a>].</p>
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<p>Diagrams of Hf (<b>a</b>) and Sr-Nd isotopes (<b>b</b>) for the Bure adakitic rock. Zircon Hf isotope-age data obtained from the Arabian Nubian Shield [<a href="#B51-minerals-14-00408" class="html-bibr">51</a>]; Mozambique Belt [<a href="#B52-minerals-14-00408" class="html-bibr">52</a>]; ranges for depleted mantle (DM), chondritic uniform reservoir (CHUR), and juvenile crust from Griffin et al. [<a href="#B53-minerals-14-00408" class="html-bibr">53</a>]. Sr-Nd isotopic data of the Depleted Mantle [<a href="#B54-minerals-14-00408" class="html-bibr">54</a>] and the Arabian Nubian Shield [<a href="#B10-minerals-14-00408" class="html-bibr">10</a>,<a href="#B28-minerals-14-00408" class="html-bibr">28</a>,<a href="#B55-minerals-14-00408" class="html-bibr">55</a>].</p>
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<p>Correlative diagram between biotite composition and oxygen buffer-reagents [<a href="#B57-minerals-14-00408" class="html-bibr">57</a>].</p>
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<p>(Ce/Ce*)<sub>D</sub> of the zircons vs. 10,000/T (<b>a</b>); [<a href="#B58-minerals-14-00408" class="html-bibr">58</a>]) and log<span class="html-italic">f</span>O<sub>2</sub> vs. T (<b>b</b>); [<a href="#B59-minerals-14-00408" class="html-bibr">59</a>]) diagrams for the Bure adakitic rock.</p>
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<p>MgO–FeO–Al<sub>2</sub>O<sub>3</sub> discrimination diagram of the tectonic setting (<b>a</b>); [<a href="#B66-minerals-14-00408" class="html-bibr">66</a>]) and TFeO/(TFeO + MgO) vs. MgO diagram (<b>b</b>); [<a href="#B67-minerals-14-00408" class="html-bibr">67</a>]) of biotite. A: anorogenic alkaline suites; C: calc-alkaline orogenic suites; P: peraluminous suites; C: crustal source; M: mixing source between crust and mantle; M: mantle source.</p>
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<p>The mean Nd-model ages of the EAO in Africa [<a href="#B22-minerals-14-00408" class="html-bibr">22</a>]. Eg—Egypt; Su—Sudan; As—Arabian Shield; En—Eritrea and northern Ethiopia; SES—Southern Ethiopia Shield; K—Kenya.</p>
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<p>Lu/Hf vs. Y (<b>a</b>) and Yb vs. Y (<b>b</b>) diagrams of zircons [<a href="#B69-minerals-14-00408" class="html-bibr">69</a>] for the Bure adakitic rock. N-MORB: normal mid-ocean ridge basalt; VAB: volcanic arc basalt; WPB: within-plate basalt.</p>
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18 pages, 5875 KiB  
Article
Simulation of a Novel Integrated Multi-Stack Fuel Cell System Based on a Double-Layer Multi-Objective Optimal Allocation Approach
by Jianhua Gao, Su Zhou, Yanda Lu and Wei Shen
Appl. Sci. 2024, 14(7), 2961; https://doi.org/10.3390/app14072961 - 31 Mar 2024
Cited by 2 | Viewed by 1415
Abstract
A multi-stack fuel cell system (MFCS) is a promising solution for high-power PEM fuel cell applications. This paper proposes an optimized stack allocation approach for power allocation, considering economy and dynamics to establish integrated subsystems with added functional components. The results show that [...] Read more.
A multi-stack fuel cell system (MFCS) is a promising solution for high-power PEM fuel cell applications. This paper proposes an optimized stack allocation approach for power allocation, considering economy and dynamics to establish integrated subsystems with added functional components. The results show that an MFCS with target powers of 20 kW, 70 kW, and 120 kW satisfies lifetime and efficiency factors. The common rail buffer at the air supply subsystem inlet stabilizes pressure, buffers, and diverts. By adjusting the volume of the common rail buffer, it is possible to reduce the maximum instantaneous power and consumption of the air compressor. The integrated hydrogen supply subsystem improves hydrogen utilization and reduces parasitic power consumption. However, the integrated thermal subsystem does not have the advantages of integrated gas supply subsystems, and its thermal management performance is worse than that of a distributed thermal subsystem. This MFCS provides a solution for high-power non-average distribution PEM fuel cell systems. Full article
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<p>CWTVC condition.</p>
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<p>Flowchart of the optimal allocation approach.</p>
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<p>MFCS structure.</p>
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<p>PEM fuel cell hydrogen cycle diagram.</p>
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<p>Radiator MAP diagram.</p>
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<p>MFCS model validation.</p>
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<p>Dynamic response of MFCS parameters: (<b>a</b>) Current; (<b>b</b>) Voltage; (<b>c</b>) Mass flow; (<b>d</b>) Inlet pressure.</p>
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<p>Impact of common rail buffer volume on air supply subsystem: (<b>a</b>) Maximum pressure drop; (<b>b</b>) Maximum power; (<b>c</b>) Energy consumption.</p>
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<p>Impact of common rail buffer volume on air supply subsystem: (<b>a</b>) Maximum pressure drop; (<b>b</b>) Maximum power; (<b>c</b>) Energy consumption.</p>
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<p>The air pressure in the common rail buffer under the CWTVC condition.</p>
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<p>The pressure in the hydrogen inlet common rail under the CWTVC condition.</p>
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<p>The anode inlet pressure under the CWTVC condition: (<b>a</b>) 20 kW; (<b>b</b>) 70 kW; (<b>c</b>) 120 kW.</p>
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<p>The variation of nitrogen concentration in anode channels under the CWTVC condition: (<b>a</b>) 20 kW; (<b>b</b>) 70 kW; (<b>c</b>) 120 kW.</p>
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<p>Effects of thermal subsystems on stack temperature: (<b>a</b>) Relationship between coolant temperature and steady state temperature of stacks; (<b>b</b>,<b>c</b>) The stabilization time and stabilization temperature for stacks at coolant temperatures of 333 K and 338 K; (<b>d</b>) Relationship between the mass flow rate of coolant and the stabilization temperature.</p>
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<p>Correlation effects of different stacks in the integrated thermal subsystem: (<b>a</b>) 20 kW; (<b>b</b>) 70 kW; (<b>c</b>) 120 kW.</p>
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<p>Correlation effects of different stacks in the integrated thermal subsystem: (<b>a</b>) 20 kW; (<b>b</b>) 70 kW; (<b>c</b>) 120 kW.</p>
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<p>Temperature variation comparisons of the integrated and distributed thermal subsystems under the CWTVC condition: (<b>a</b>) 20 kW; (<b>b</b>) 70 kW; (<b>c</b>) 120 kW.</p>
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<p>Temperature variation comparisons of the integrated and distributed thermal subsystems under the CWTVC condition: (<b>a</b>) 20 kW; (<b>b</b>) 70 kW; (<b>c</b>) 120 kW.</p>
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42 pages, 8548 KiB  
Review
Magnetron Sputtered Lead Titanates Thin Films for Pyroelectric Applications: Part 1: Epitaxial Growth, Material Characterization
by Morteza Fathipour, Yanan Xu and Mukti Rana
Materials 2024, 17(1), 221; https://doi.org/10.3390/ma17010221 - 30 Dec 2023
Viewed by 1513
Abstract
Pyroelectric materials, are those materials with the property that in the absence of any externally applied electric field, develop a built-in spontaneous polarization in their unit cell structure. They are regarded as ideal detector elements for infrared applications because they can provide fast [...] Read more.
Pyroelectric materials, are those materials with the property that in the absence of any externally applied electric field, develop a built-in spontaneous polarization in their unit cell structure. They are regarded as ideal detector elements for infrared applications because they can provide fast response time and uniform sensitivity at room temperature over all wavelengths. Crystals of the perovskite Lead Titanate (PbTiO3) family show pyroelectric characteristics and undergo structural phase transitions. They have a high Curie temperature (the temperature at which the material changes from the ferroelectric (polar) to the paraelectric (nonpolar) phase), high pyroelectric coefficient, high spontaneous polarization, low dielectric constant, and constitute important component materials not only useful for infrared detection, but also with vast applications in electronic, optic, and Micro-electromechanical systems (MEMS) devices. However, the preparation of large perfect, and pure single crystals of PbTiO3 is challenging. Additionally, difficulties arise in the application of such bulk crystals in terms of connection to processing circuits, large size, and high voltages required for their operation. A number of thin film fabrication techniques have been proposed to overcome these inadequacies, among which, magnetron sputtering has demonstrated many potentials. By addressing these aspects, the review article aims to contribute to the understanding of the challenges in the field of pyroelectric materials, highlight potential solutions, and showcase the advancements and potentials of pyroelectric perovskite series including PbZrTiO3 (PZT), PbxCa1x (PZN-PT), etc. for which PbTiO3 is the end member. The review is presented in two parts. Part 1 focuses on material aspects, including preparation methods using magnetron sputtering and material characterization. We take a tutorial approach to discuss the progress made in epitaxial growth of lead titanate-based ceramics prepared by magnetron sputtering and examine how processing conditions may affect the crystalline quality of the growing film by linking to the properties of the substrate/buffer layer, growth substrate temperature, and the oxygen partial pressure in the gas mixture. Careful control and optimization of these parameters are crucial for achieving high-quality thin films with desired structural and morphological characteristics. Full article
(This article belongs to the Section Materials Physics)
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<p>Schematic representation of the epitaxy by tilting the growth direction of the film relative to the substrate plane [<a href="#B36-materials-17-00221" class="html-bibr">36</a>]. “Reproduced with permission from Copyright Clearance Center on behalf of Smith, D. L., Thin-film deposition: principles and practice; McGraw-Hill: New York, USA, 1995”.</p>
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<p>Evolution of crystal phases as a function of on Ge (111) substrate [<a href="#B37-materials-17-00221" class="html-bibr">37</a>]. Copyright © Greene J.E. Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part 2. Critical Reviews in Solid State and Material Sciences 1983, 11(3), pp: 191, Figure 23, <a href="https://doi.org/10.1080/01611598308244063" target="_blank">https://doi.org/10.1080/01611598308244063</a>, reprinted by permission of Informa UK Limited, trading as Taylor &amp; Francis Group, <a href="http://www.tandfonline.com" target="_blank">www.tandfonline.com</a> on behalf of Greene J.E. Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part 2. Critical Reviews in Solid State and Material Sciences 1983, 11(3), pp: 191. <a href="https://doi.org/10.1080/01611598308244063" target="_blank">https://doi.org/10.1080/01611598308244063</a>.</p>
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<p>Atomic ratio (<math display="inline"><semantics> <mrow> <mi mathvariant="normal">P</mi> <mi mathvariant="normal">b</mi> <mo>/</mo> <mi mathvariant="normal">T</mi> <mi mathvariant="normal">i</mi> </mrow> </semantics></math>) in the PT films produced by magnetron sputtering with no in-situ heating is used for the film growth. Oxide targets was composed of <math display="inline"><semantics> <mrow> <mi>x</mi> <mi mathvariant="normal">P</mi> <mi mathvariant="normal">b</mi> <mi mathvariant="normal">O</mi> <mo>+</mo> <mn>1</mn> <mi mathvariant="normal">T</mi> <mi mathvariant="normal">i</mi> <msub> <mrow> <mi mathvariant="normal">O</mi> </mrow> <mrow> <mn>2</mn> </mrow> </msub> </mrow> </semantics></math>, with <math display="inline"><semantics> <mrow> <mn>0.4</mn> <mo>&lt;</mo> <mi>x</mi> <mo>&lt;</mo> <mn>1.0</mn> </mrow> </semantics></math> [<a href="#B56-materials-17-00221" class="html-bibr">56</a>]. “Reproduced from Jaber, B.; Remiens, D; Thierry, B. Substrate temperature and target composition effects on PbTiO<sub>3</sub> thin films produced in situ by sputtering. Journal of Applied Physics, 1996, 79(2), p.1182–1184. <a href="https://doi.org/10.1063/1.360903" target="_blank">https://doi.org/10.1063/1.360903</a>, with the permission of AIP Publishing”.</p>
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<p>(<math display="inline"><semantics> <mrow> <mi mathvariant="normal">P</mi> <mi mathvariant="normal">b</mi> <mo>/</mo> <mi mathvariant="normal">T</mi> <mi mathvariant="normal">i</mi> </mrow> </semantics></math>) ratio of films obtained at various substrate temperatures and target compositions [<a href="#B56-materials-17-00221" class="html-bibr">56</a>]. “Reproduced from Jaber, B.; Remiens, D; Thierry, B. Substrate temperature and target composition effects on PbTiO<sub>3</sub> thin films produced in situ by sputtering. Journal of Applied Physics, 1996, 79(2), pp. 1182–1184. <a href="https://doi.org/10.1063/1.360903" target="_blank">https://doi.org/10.1063/1.360903</a>, with the permission of AIP Publishing”.</p>
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<p>(Pb/Ti) ratio for the PT films prepared at <span class="html-italic">Ts</span> <math display="inline"><semantics> <mrow> <mo>=</mo> </mrow> </semantics></math> 550 °C using a target with <math display="inline"><semantics> <mrow> <mi>x</mi> <mo>=</mo> <mn>0.54</mn> </mrow> </semantics></math> at various gas pressures [<a href="#B58-materials-17-00221" class="html-bibr">58</a>]. Copyright © Jaber, B.; Dogheche, E.; Rèmiens, D.; Thierry, B. Influence of deposition parameters on physico-chemical and optical properties of sputtered PbTiO<sub>3</sub> thin films. Integr. Ferroelectr., 1996, 13(4), pp. 225–237. <a href="https://doi.org/10.1080/10584589608012318" target="_blank">https://doi.org/10.1080/10584589608012318</a>, reprinted by permission of Informa UK Limited, trading as Taylor &amp; Francis Ltd., <a href="http://www.tandfonline.com" target="_blank">http://www.tandfonline.com</a> on behalf of Jaber, B.; Dogheche, E.; Rèmiens, D.; Thierry, B. Influence of deposition parameters on physico-chemical and optical properties of sputtered PbTiO<sub>3</sub> thin films. Integr. Ferroelectr., 1996, 13(4), pp. 225–237. <a href="https://doi.org/10.1080/10584589608012318" target="_blank">https://doi.org/10.1080/10584589608012318</a>.</p>
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<p>Growth rate of films obtained at various substrate temperatures and target compositions [<a href="#B56-materials-17-00221" class="html-bibr">56</a>]. “Reproduced from Jaber, B.; Remiens, D; Thierry, B. Substrate temperature and target composition effects on PbTiO<sub>3</sub> thin films produced in situ by sputtering. Journal of Applied Physics, 1996, 79(2), pp. 1182–1184. <a href="https://doi.org/10.1063/1.360903" target="_blank">https://doi.org/10.1063/1.360903</a>, with the permission of AIP Publishing”.</p>
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<p>Deposition rate vs. substrate temperature showing the transition from amorphous to poly, and from poly to single crystalline structures for PT thin films (gas composition: <math display="inline"><semantics> <mrow> <mfenced open="[" close="]" separators="|"> <mrow> <msub> <mrow> <mi mathvariant="bold">A</mi> <mi mathvariant="bold">r</mi> </mrow> <mrow> <mn mathvariant="bold">2</mn> </mrow> </msub> </mrow> </mfenced> <mo>/</mo> <mfenced open="[" close="]" separators="|"> <mrow> <msub> <mrow> <mi mathvariant="bold">O</mi> </mrow> <mrow> <mn mathvariant="bold">2</mn> </mrow> </msub> </mrow> </mfenced> <mo>=</mo> <mn>90</mn> <mo>/</mo> <mn>10</mn> </mrow> </semantics></math>, gas pressure: 12 mTorr) [<a href="#B60-materials-17-00221" class="html-bibr">60</a>]. Copyright © Kim, S.; Kang, Y.; Baik, S. Sputter deposition of ferroelectric PbTiO<sub>3</sub> thin films. Ferroelectrics, 1994, 152(1), pp. 1–6. <a href="https://doi.org/10.1080/00150199408017587" target="_blank">https://doi.org/10.1080/00150199408017587</a>, reprinted by permission of Informa UK Limited, trading as Taylor &amp; Francis Group, <a href="http://www.tandfonline.com" target="_blank">www.tandfonline.com</a> on behalf of Kim, S.; Kang, Y.; Baik, S. Sputter deposition of ferroelectric PbTiO<sub>3</sub> thin films. Ferroelectrics, 1994, 152(1), pp. 1–6. <a href="https://doi.org/10.1080/00150199408017587" target="_blank">https://doi.org/10.1080/00150199408017587</a>.</p>
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<p>SEM micrograph showing surface morphology of a PT thin film grown in situ at <math display="inline"><semantics> <mrow> <mn>600</mn> <mo> </mo> <mo>°</mo> <mi mathvariant="normal">C</mi> </mrow> </semantics></math> on MgO, using a gas composition: <math display="inline"><semantics> <mrow> <mfenced open="[" close="]" separators="|"> <mrow> <msub> <mrow> <mi mathvariant="bold">A</mi> <mi mathvariant="bold">r</mi> </mrow> <mrow> <mn mathvariant="bold">2</mn> </mrow> </msub> </mrow> </mfenced> <mo>/</mo> <mfenced open="[" close="]" separators="|"> <mrow> <msub> <mrow> <mi mathvariant="bold">O</mi> </mrow> <mrow> <mn mathvariant="bold">2</mn> </mrow> </msub> </mrow> </mfenced> <mo>=</mo> <mn>90</mn> <mo>/</mo> <mn>10</mn> </mrow> </semantics></math> and the gas pressure of <math display="inline"><semantics> <mrow> <mn>12</mn> </mrow> </semantics></math> mTorr The RF input power density was 2 W/cm<sup>2</sup> [<a href="#B60-materials-17-00221" class="html-bibr">60</a>]. Copyright © Kim, S.; Kang, Y.; Baik, S. Sputter deposition of ferroelectric PbTiO<sub>3</sub> thin films. Ferroelectrics, 1994, 152(1), pp. 1–6. <a href="https://doi.org/10.1080/00150199408017587" target="_blank">https://doi.org/10.1080/00150199408017587</a>, reprinted by permission of Informa UK Limited, trading as Taylor &amp; Francis Group, <a href="http://www.tandfonline.com" target="_blank">www.tandfonline.com</a> on behalf of Kim, S.; Kang, Y.; Baik, S. Sputter deposition of ferroelectric PbTiO<sub>3</sub> thin films. Ferroelectrics, 1994, 152(1), pp. 1–6. <a href="https://doi.org/10.1080/00150199408017587" target="_blank">https://doi.org/10.1080/00150199408017587</a>.</p>
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<p>RBS spectrum of a PT thin film on MgO [<a href="#B60-materials-17-00221" class="html-bibr">60</a>]. Copyright © Kim, S.; Kang, Y.; Baik, S. Sputter deposition of ferroelectric PbTiO<sub>3</sub> thin films. Ferroelectrics, 1994, 152(1), pp. 1–6. <a href="https://doi.org/10.1080/00150199408017587" target="_blank">https://doi.org/10.1080/00150199408017587</a>, reprinted by permission of Informa UK Limited, trading as Taylor &amp; Francis Group, <a href="http://www.tandfonline.com" target="_blank">www.tandfonline.com</a> on behalf of Kim, S.; Kang, Y.; Baik, S. Sputter deposition of ferroelectric PbTiO<sub>3</sub> thin films. Ferroelectrics, 1994, 152(1), pp. 1–6. <a href="https://doi.org/10.1080/00150199408017587" target="_blank">https://doi.org/10.1080/00150199408017587</a>.</p>
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<p>Johnson–Mehl–Avrami plot of crystallization of isothermal treated PT, thin films on Pt substrates at 475 °C [<a href="#B60-materials-17-00221" class="html-bibr">60</a>]. Copyright © Kim, S.; Kang, Y.; Baik, S. Sputter deposition of ferroelectric PbTiO<sub>3</sub> thin films. Ferroelectrics, 1994, 152(1), pp. 1–6. <a href="https://doi.org/10.1080/00150199408017587" target="_blank">https://doi.org/10.1080/00150199408017587</a>, reprinted by permission of Informa UK Limited, trading as Taylor &amp; Francis Group, <a href="http://www.tandfonline.com" target="_blank">www.tandfonline.com</a> on behalf of Kim, S.; Kang, Y.; Baik, S. Sputter deposition of ferroelectric PbTiO<sub>3</sub> thin films. Ferroelectrics, 1994, 152(1), pp. 1–6. <a href="https://doi.org/10.1080/00150199408017587" target="_blank">https://doi.org/10.1080/00150199408017587</a>.</p>
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<p>TEM micrographs of fully crystallized (550 °C, 5 min) PT Thin film on Pt: part (<b>a</b>) bright field image, part (<b>b</b>) selected area diffraction pattern, and part (<b>c</b>) micro-diffraction pattern of the arrowed grain in (<b>a</b>) [<a href="#B60-materials-17-00221" class="html-bibr">60</a>]. Copyright © Kim, S.; Kang, Y.; Baik, S. Sputter deposition of ferroelectric PbTiO<sub>3</sub> thin films. Ferroelectrics, 1994, 152(1), pp. 1–6. <a href="https://doi.org/10.1080/00150199408017587" target="_blank">https://doi.org/10.1080/00150199408017587</a>, reprinted by permission of Informa UK Limited, trading as Taylor &amp; Francis Group, <a href="http://www.tandfonline.com" target="_blank">www.tandfonline.com</a> on behalf of Kim, S.; Kang, Y.; Baik, S. Sputter deposition of ferroelectric PbTiO<sub>3</sub> thin films. Ferroelectrics, 1994, 152(1), pp. 1–6. <a href="https://doi.org/10.1080/00150199408017587" target="_blank">https://doi.org/10.1080/00150199408017587</a>.</p>
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<p>Composition and crystallinity of the PLZT films are obtained at various substrate temperatures and incident (Pb/Ti) ratios. The Pb/Ti ratios: (a) 2.3, (b) 1.6, (c) 1.2, (d) 0.8 from Wassa et al. [<a href="#B62-materials-17-00221" class="html-bibr">62</a>]. “Copyright © Wasa, K.; Adachi, H.; Kitabatake, M. Sputtering deposition process of perovskite Pb-Ti-O<sub>3</sub> families. Ferroelectrics, 1992, 137(1), pp. 343–356. <a href="https://doi.org/10.1080/00150199208015965" target="_blank">https://doi.org/10.1080/00150199208015965</a>, reprinted by permission of Informa UK Limited, trading as Taylor &amp; Francis Ltd., <a href="http://www.tandfonline.com" target="_blank">http://www.tandfonline.com</a> on behalf of Wasa, K.; Adachi, H.; Kitabatake, M. Sputtering deposition process of perovskite Pb-Ti-O<sub>3</sub> families. Ferroelectrics, 1992, 137(1), pp. 343–356. <a href="https://doi.org/10.1080/00150199208015965" target="_blank">https://doi.org/10.1080/00150199208015965</a>”.</p>
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<p>(<b>a</b>,<b>b</b>) show the XRD data of PCT thin films deposited on Si and Si/SiN/Ti/Au substrates before and after annealing, respectively [<a href="#B16-materials-17-00221" class="html-bibr">16</a>]. “Mafi, E.; Calvano, N.; Patel, J.; Islam, M. S.; Hasan Khan, M. S.; Rana, M. (2020). Electro-Optical Properties of Sputtered Calcium Lead Titanate Thin Films for Pyroelectric Detection. <span class="html-italic">Micromachines</span>, <b>2020</b>, <span class="html-italic">11(12)</span>, 1073. <a href="https://doi.org/10.3390/mi11121073" target="_blank">https://doi.org/10.3390/mi11121073</a>.”, retrieved from <a href="https://doi.10.3390/mi11121073" target="_blank">https://doi.10.3390/mi11121073</a>, used under Creative Commons Attribution-4.0 International(<a href="https://creativecommons.org/licenses/by/4.0/" target="_blank">https://creativecommons.org/licenses/by/4.0/</a>).</p>
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<p>An SEM micrograph showing crystal growth PCT thin film annealed at 600 °C [<a href="#B16-materials-17-00221" class="html-bibr">16</a>]. “Mafi, E.; Calvano, N.; Patel, J.; Islam, M. S.; Hasan Khan, M. S.; Rana, M. (2020). Electro-Optical Properties of Sputtered Calcium Lead Titanate Thin Films for Pyroelectric Detection. <span class="html-italic">Micromachines</span>, <b>2020</b>, <span class="html-italic">11(12)</span>, 1073. <a href="https://doi.org/10.3390/mi11121073" target="_blank">https://doi.org/10.3390/mi11121073</a>.”, retrieved from <a href="https://doi.10.3390/mi11121073" target="_blank">https://doi.10.3390/mi11121073</a>, used under Creative Commons Attribution-4.0 International (<a href="https://creativecommons.org/licenses/by/4.0/" target="_blank">https://creativecommons.org/licenses/by/4.0/</a>).</p>
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<p>Part (<b>a</b>) and part (<b>b</b>) are Planar atomic arrangement of the c-plane of sapphire and the (111) plane of cubic perovskite (AB<math display="inline"><semantics> <mrow> <msub> <mrow> <mi mathvariant="bold">O</mi> </mrow> <mrow> <mn mathvariant="bold">3</mn> </mrow> </msub> </mrow> </semantics></math>) [<a href="#B62-materials-17-00221" class="html-bibr">62</a>]. “Copyright © Wasa, K.; Adachi, H.; Kitabatake, M. Sputtering deposition process of perovskite Pb-Ti-O<sub>3</sub> families. Ferroelectrics, 1992, 137(1), pp. 343–356. <a href="https://doi.org/10.1080/00150199208015965" target="_blank">https://doi.org/10.1080/00150199208015965</a>, reprinted by permission of Informa UK Limited, trading as Taylor &amp; Francis Ltd., <a href="http://www.tandfonline.com" target="_blank">http://www.tandfonline.com</a> on behalf of Wasa, K.; Adachi, H.; Kitabatake, M. Sputtering deposition process of perovskite Pb-Ti-O<sub>3</sub> families. Ferroelectrics, 1992, 137(1), pp. 343–356. <a href="https://doi.org/10.1080/00150199208015965" target="_blank">https://doi.org/10.1080/00150199208015965</a>”.</p>
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<p>Typical REED patterns of PLZT (28/0/100) thin films of <math display="inline"><semantics> <mrow> <mn>0.4</mn> <mo> </mo> <mi mathvariant="sans-serif">μ</mi> <mi mathvariant="normal">m</mi> <mo> </mo> </mrow> </semantics></math>thick deposited on (0001) sapphire, Wassa et al. [<a href="#B62-materials-17-00221" class="html-bibr">62</a>]. “Copyright © Wasa, K.; Adachi, H.; Kitabatake, M. Sputtering deposition process of perovskite Pb-Ti-O<sub>3</sub> families. Ferroelectrics, 1992, 137(1), pp. 343–356. <a href="https://doi.org/10.1080/00150199208015965" target="_blank">https://doi.org/10.1080/00150199208015965</a>, reprinted by permission of Informa UK Limited, trading as Taylor &amp; Francis Ltd., <a href="http://www.tandfonline.com" target="_blank">http://www.tandfonline.com</a> on behalf of Wasa, K.; Adachi, H.; Kitabatake, M. Sputtering deposition process of perovskite Pb-Ti-O<sub>3</sub> families. Ferroelectrics, 1992, 137(1), pp. 343–356. <a href="https://doi.org/10.1080/00150199208015965" target="_blank">https://doi.org/10.1080/00150199208015965</a>”.</p>
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<p>Crystal orientation of the epitaxial (111) PLZT film on (0001) sapphire Wassa et al. [<a href="#B62-materials-17-00221" class="html-bibr">62</a>]. “Copyright © Wasa, K.; Adachi, H.; Kitabatake, M. Sputtering deposition process of perovskite Pb-Ti-O<sub>3</sub> families. Ferroelectrics, 1992, 137(1), pp. 343–356. <a href="https://doi.org/10.1080/00150199208015965" target="_blank">https://doi.org/10.1080/00150199208015965</a>, reprinted by permission of Informa UK Limited, trading as Taylor &amp; Francis Ltd., <a href="http://www.tandfonline.com" target="_blank">http://www.tandfonline.com</a> on behalf of Wasa, K.; Adachi, H.; Kitabatake, M. Sputtering deposition process of perovskite Pb-Ti-O<sub>3</sub> families. Ferroelectrics, 1992, 137(1), pp. 343–356. <a href="https://doi.org/10.1080/00150199208015965" target="_blank">https://doi.org/10.1080/00150199208015965</a>”.</p>
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<p>Pressure-temperature phase diagram for PbTi<math display="inline"><semantics> <mrow> <msub> <mrow> <mi mathvariant="normal">O</mi> </mrow> <mrow> <mn>3</mn> </mrow> </msub> </mrow> </semantics></math> on corning 7059 glass substrate (<math display="inline"><semantics> <mrow> <mo>°</mo> </mrow> </semantics></math>, perovskite; x, pyrochlore and Δ shows mixed perovskite-pyrochlore phase) [<a href="#B46-materials-17-00221" class="html-bibr">46</a>]. “Copyright © Shiosaki, T.; Adachi, M.; Mochizuki, S.; Kawabata, A. Properties of sputter-deposited PbTiO<sub>3</sub>, Pb (Zr, Ti) O<sub>3</sub>, Pb<sub>2</sub>KNb<sub>5</sub>O<sub>15</sub> films. Ferroelectrics, 1985, 63(1), pp. 227–234. <a href="https://doi.org/10.1080/00150198508221404" target="_blank">https://doi.org/10.1080/00150198508221404</a>, reprinted by permission of Informa UK Limited, trading as Taylor &amp; Francis Group, <a href="http://www.tandfonline.com" target="_blank">www.tandfonline.com</a> on behalf of Shiosaki, T.; Adachi, M.; Mochizuki, S.; Kawabata, A. Properties of sputter-deposited PbTiO<sub>3</sub>, Pb (Zr, Ti) O<sub>3</sub>, Pb<sub>2</sub>KNb<sub>5</sub>O<sub>15</sub> films. Ferroelectrics, 1985, 63(1), pp. 227–234. <a href="https://doi.org/10.1080/00150198508221404" target="_blank">https://doi.org/10.1080/00150198508221404</a>”.</p>
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<p>(Cu-Kα) X-ray diffraction pattern of the PT thin films deposited on <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>Ca</mi> <mi mathvariant="bold">F</mi> </mrow> <mrow> <mn mathvariant="bold">2</mn> </mrow> </msub> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>Sr</mi> <mi mathvariant="bold">F</mi> </mrow> <mrow> <mn mathvariant="bold">2</mn> </mrow> </msub> </mrow> </semantics></math> films on Si [<a href="#B55-materials-17-00221" class="html-bibr">55</a>]. “Copyright © Okuyama, M.; Ueda, T.; Hamakawa, Y. Preparation of Oriented PbTiO<sub>3</sub> Ferroelectric Thin Films on Silicon. The Japan Society of Applied Physics, vol. 24, no. S2, p. 619, Jan. 1985, <a href="https://doi.org/10.7567/JJAPS.24S2.619" target="_blank">https://doi.org/10.7567/JJAPS.24S2.619</a>. Page: 620 <a href="#materials-17-00221-f001" class="html-fig">Figure 1</a>. The Japan Society of Applied Physics. Reproduced by permission of IOP Publishing Ltd. All rights reserved”.</p>
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<p>Part (<b>a</b>) and (<b>b</b>) is X-ray diffraction pattern of the epitaxial Pt thin film on the (0001) sapphire [<a href="#B64-materials-17-00221" class="html-bibr">64</a>]. “Copyright © Adachi, M.; Matsuzaki, T.; Yamada, T.; Shiosaki, T.; Kawabata, A. Sputter-Deposition of [111]-Axis Oriented Rhombohedral PZT Films and Their Dielectric, Ferroelectric and Pyroelectric Properties. Jpn. J. Appl. Phys., 1987, 26 (Part 1, No. 4), pp. 550–553. <a href="https://doi.org/10.1143/JJAP.26.550" target="_blank">https://doi.org/10.1143/JJAP.26.550</a>. Page: 551 <a href="#materials-17-00221-f001" class="html-fig">Figure 1</a>. Japanese Journal of Applied Physics: JJAP online. Reproduced by permission of IOP Publishing Ltd. All rights reserved.”.</p>
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<p>RHEED pattern of an epitaxial Pt thin film on (0001) sapphire [<a href="#B64-materials-17-00221" class="html-bibr">64</a>]. “Copyright © Adachi, M.; Matsuzaki, T.; Yamada, T.; Shiosaki, T.; Kawabata, A. Sputter-Deposition of [111]-Axis Oriented Rhombohedral PZT Films and Their Dielectric, Ferroelectric and Pyroelectric Properties. Jpn. J. Appl. Phys., 1987, 26 (Part 1, No. 4), pp. 550–553. <a href="https://doi.org/10.1143/JJAP.26.550" target="_blank">https://doi.org/10.1143/JJAP.26.550</a>. Page: 551 <a href="#materials-17-00221-f002" class="html-fig">Figure 2</a>. Japanese Journal of Applied Physics: JJAP online. Reproduced by permission of IOP Publishing Ltd. All rights reserved”.</p>
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<p>RHEED Pattern of an epitaxial PZT film on Pt/Sapphire [<a href="#B64-materials-17-00221" class="html-bibr">64</a>]. “Copyright © Adachi, M.; Matsuzaki, T.; Yamada, T.; Shiosaki, T.; Kawabata, A. Sputter-Deposition of [111]-Axis Oriented Rhombohedral PZT Films and Their Dielectric, Ferroelectric and Pyroelectric Properties. Jpn. J. Appl. Phys., 1987, 26 (Part 1, No. 4), pp. 550–553. <a href="https://doi.org/10.1143/JJAP.26.550" target="_blank">https://doi.org/10.1143/JJAP.26.550</a>. Page: 551 <a href="#materials-17-00221-f004" class="html-fig">Figure 4</a>. Japanese Journal of Applied Physics: JJAP online. Reproduced by permission of IOP Publishing Ltd. All rights reserved”.</p>
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<p>Surface SEM image of PT thin films on miscut (001) ST sputtered at: (<b>a</b>) at low partial oxygen pressure, <math display="inline"><semantics> <mrow> <mfenced open="[" close="]" separators="|"> <mrow> <msub> <mrow> <mi mathvariant="bold">A</mi> <mi mathvariant="bold">r</mi> </mrow> <mrow> <mn>2</mn> </mrow> </msub> </mrow> </mfenced> <mo>/</mo> <mfenced open="[" close="]" separators="|"> <mrow> <msub> <mrow> <mi mathvariant="bold">O</mi> </mrow> <mrow> <mn>2</mn> </mrow> </msub> </mrow> </mfenced> <mo>=</mo> <mn>20</mn> <mo>/</mo> <mn>1</mn> </mrow> </semantics></math>, and (<b>b</b>) at high oxygen partial pressure <math display="inline"><semantics> <mrow> <mfenced open="[" close="]" separators="|"> <mrow> <msub> <mrow> <mi mathvariant="bold">A</mi> <mi mathvariant="bold">r</mi> </mrow> <mrow> <mn>2</mn> </mrow> </msub> </mrow> </mfenced> <mo>/</mo> <mfenced open="[" close="]" separators="|"> <mrow> <msub> <mrow> <mi mathvariant="bold">O</mi> </mrow> <mrow> <mn>2</mn> </mrow> </msub> </mrow> </mfenced> <mo>=</mo> <mn>20</mn> <mo>/</mo> <mn>1</mn> </mrow> </semantics></math> (the PT film thickness, 130 nm; miscut angle, <math display="inline"><semantics> <mrow> <mn>1.7</mn> <mo>°</mo> </mrow> </semantics></math>) [<a href="#B89-materials-17-00221" class="html-bibr">89</a>]. Springer Nature grants permission to reproduce material from “Ichikawa, Y.; Matsunaga, T.; Hassan, M.; Kanno, I.;Suzuki, T.; Wasa, K. Growth and structure of heteroepitaxial lead ti-tanate thin films constrained by miscut strontium titanate substrates. Journal of materials research, 2006, 21, pp. 1261–1268. <a href="https://doi.org/10.1557/jmr.2006.0162" target="_blank">https://doi.org/10.1557/jmr.2006.0162</a> Page: 1262 <a href="#materials-17-00221-f001" class="html-fig">Figure 1</a>”.</p>
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<p>The relationship between the <math display="inline"><semantics> <mrow> <mi>P</mi> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <mi>v</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <mi>α</mi> </mrow> </semantics></math> as well as <math display="inline"><semantics> <mrow> <mi mathvariant="sans-serif">Δ</mi> <mi mathvariant="sans-serif">θ</mi> </mrow> </semantics></math> of (001) reflection, for the PLTl0 film [<a href="#B57-materials-17-00221" class="html-bibr">57</a>]. “Copyright © Iijima, K.; Takayama, R.; Tomita, Y.; Ueda, I. Epitaxial growth and the crystallographic, dielectric, and pyroelectric properties of lanthanum-modified lead titanate thin films. Journal of Applied Physics, 1986, 60(8), pp. 2914–2919. <a href="https://doi.org/10.1063/1.337078" target="_blank">https://doi.org/10.1063/1.337078</a>. Journal of Applied Physics. Reproduced by permission of IOP Publishing Ltd. All rights reserved”.</p>
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<p>Relationship between the input power and v, α as well as Δθ of (001) reflection, for the PLTl0 film, K. Iijima et al. [<a href="#B57-materials-17-00221" class="html-bibr">57</a>]. “Copyright © Iijima, K.; Takayama, R.; Tomita, Y.; Ueda, I. Epitaxial growth and the crystallographic, dielectric, and pyroelectric properties of lanthanum-modified lead titanate thin films. Journal of Applied Physics, 1986, 60(8), pp. 2914–2919. <a href="https://doi.org/10.1063/1.337078" target="_blank">https://doi.org/10.1063/1.337078</a>. Page: 2915 <a href="#materials-17-00221-f002" class="html-fig">Figure 2</a> and <a href="#materials-17-00221-f003" class="html-fig">Figure 3</a>. Journal of Applied Physics. Reproduced by permission of IOP Publishing Ltd. All rights reserved.”.</p>
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<p>(<b>a</b>) schematic diagram illustrating the composite target and (<b>b</b>) XRD patterns of the PZT film on a (001) MgO substrate deposited at 200 W using <math display="inline"><semantics> <mrow> <msub> <mrow> <mo>(</mo> <mi mathvariant="normal">P</mi> <mi mathvariant="normal">b</mi> </mrow> <mrow> <mn>1.2</mn> </mrow> </msub> <msub> <mrow> <mi mathvariant="normal">Z</mi> <mi mathvariant="normal">r</mi> </mrow> <mrow> <mn>0.4</mn> </mrow> </msub> <msub> <mrow> <mi mathvariant="normal">T</mi> <mi mathvariant="normal">i</mi> </mrow> <mrow> <mn>0.6</mn> </mrow> </msub> <mo>)</mo> <msub> <mrow> <mi mathvariant="bold">O</mi> </mrow> <mrow> <mn mathvariant="bold">3</mn> </mrow> </msub> </mrow> </semantics></math> + PbO composite ceramic target [<a href="#B65-materials-17-00221" class="html-bibr">65</a>]. “Copyright © Nam, S. M.; Tsurumi, T. In Situ Epitaxial Growth of Lead Zirconate Titanate Films by Bias Sputtering at High RF Power. Jpn. J. Appl. Phys., 2004, 43(5A), pp. 2672–2676. <a href="https://doi.org/10.1143/JJAP.43.2672" target="_blank">https://doi.org/10.1143/JJAP.43.2672</a>. Page: 2674 <a href="#materials-17-00221-f004" class="html-fig">Figure 4</a>. Japanese Journal of Applied Physics. Reproduced by permission of IOP Publishing Ltd. All rights reserved”.</p>
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<p>FE-SEM images showing the surface morphology of PZT films deposited on (001) MgO substrates at 200 W under (<b>a</b>) 0 V bias voltage and (<b>b</b>) −100 V bias voltage using the composite ceramic target [<a href="#B65-materials-17-00221" class="html-bibr">65</a>]. “Copyright © Nam, S. M.; Tsurumi, T. In Situ Epitaxial Growth of Lead Zirconate Titanate Films by Bias Sputtering at High RF Power. Jpn. J. Appl. Phys., 2004, 43(5A), pp. 2672–2676. <a href="https://doi.org/10.1143/JJAP.43.2672" target="_blank">https://doi.org/10.1143/JJAP.43.2672</a>. Page: 2676 <a href="#materials-17-00221-f010" class="html-fig">Figure 10</a>. Japanese Journal of Applied Physics. Reproduced by permission of IOP Publishing Ltd. All rights reserved”.</p>
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12 pages, 2576 KiB  
Article
Influence of Deposition Conditions and Thermal Treatments on Morphological and Chemical Characteristics of Li6.75La3Zr1.75Ta0.25O12 Thin Films Deposited by Nanosecond PLD
by Mariangela Curcio, Sergio Brutti, Arcangelo Celeste, Agostino Galasso, Angela De Bonis and Roberto Teghil
Coatings 2023, 13(9), 1496; https://doi.org/10.3390/coatings13091496 - 24 Aug 2023
Cited by 1 | Viewed by 1875
Abstract
The production of thin films has been extensively studied due to their unique properties that make them highly useful in a wide range of scientific and technological applications. Obtaining thin films with well-defined stoichiometry and crystallinity is a challenging task, especially when dealing [...] Read more.
The production of thin films has been extensively studied due to their unique properties that make them highly useful in a wide range of scientific and technological applications. Obtaining thin films with well-defined stoichiometry and crystallinity is a challenging task, especially when dealing with materials of complex stoichiometry. Among diverse methodologies for the manufacture of thin films, pulsed laser deposition (PLD) stands out as a versatile technique for producing crystalline films with complex chemical compositions. In this study, nanosecond PLD was employed to manufacture thin films of Ta-doped Li7La3Zr2O12 (LLZTO), a garnet-like oxide that has been proposed as solid electrolyte for Li-ion solid state batteries. Two distinct deposition atmospheres were investigated: vacuum conditions at 10−3 Pa and an oxygen-enriched environment with 10 Pa of O2 gas buffer. To mitigate lithium losses during deposition, a minor addition of lithium oxide was incorporated into the target. The effects of deposition atmosphere and the impact of post-deposition annealing on the structural, compositional, and morphological properties of LLZTO thin films were analysed through a multi-technique approach. The results suggest deposition under oxygen pressure led to the growth of compact, crystalline films characterized by homogenous elemental distribution across the surface and throughout the film’s depth. These films closely resemble the composition of the target LLZTO material, offering valuable insights for the fabrication of high-quality complex oxide thin films. Full article
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<p>TEM images registered on LLZTO film deposited for 10 min (<b>a</b>,<b>b</b>) in vacuum (10<sup>−3</sup> Pa) and (<b>d</b>,<b>e</b>) at 10 Pa of O<sub>2</sub> gas buffer. Particles size distribution obtained from different TEM images of film deposited (<b>c</b>) at 10<sup>−3</sup> Pa and (<b>f</b>) at 10 Pa of O<sub>2</sub>.</p>
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<p>SEM images registered on LLZTO deposited film (<b>a</b>) at 10<sup>−3</sup> Pa and (<b>b</b>) at 10 Pa of O<sub>2</sub> gas buffer.</p>
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<p>XRD patterns of LLZTO (<b>a</b>) target material, film deposited (<b>b</b>) at 10 Pa of O<sub>2</sub> gas buffer and (<b>c</b>) at 10<sup>−3</sup> Pa.</p>
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<p>(<b>a</b>) XRD patterns and (<b>b</b>) Raman spectrum of LLZTO target material, film deposited at 10 Pa of O<sub>2</sub> gas buffer and in vacuum.</p>
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<p>(<b>a</b>) XRD patterns of LLZTO film deposited at 10 Pa of O<sub>2</sub> gas buffer and in vacuum and annealed in air; SEM images of film deposited (<b>b</b>) in vacuum and (<b>c</b>) at 10 Pa of O<sub>2</sub> annealed in air, (<b>d</b>) XRD patterns and (<b>e</b>) Raman spectra of LLZTO film deposited at 10 Pa of O<sub>2</sub> gas buffer and in vacuum and annealed in O<sub>2</sub> flow.</p>
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<p>SEM image of LLZTO film deposited at 10 Pa Of O<sub>2</sub> (<b>a</b>) and its cross-section obtained by FIB (<b>b</b>) with EDS elemental mapping of La (red), Zr (blue), Ta (cyan), and O (purple) within the area reported in the inset.</p>
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10 pages, 3745 KiB  
Article
Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
by You-Chen Weng, Ming-Yao Hsiao, Chun-Hsiung Lin, Yu-Pin Lan and Edward-Yi Chang
Materials 2023, 16(9), 3376; https://doi.org/10.3390/ma16093376 - 26 Apr 2023
Viewed by 1669
Abstract
A high-pressure (HP) GaN nucleation layer (NL) was inserted between AlGaN buffer and an unintentionally doped (UID) GaN layer of an AlGaN/GaN HEMT on Si. The XRD and TEM showed that when the V/III ratio was optimized during the HP-GaN NL growth, the [...] Read more.
A high-pressure (HP) GaN nucleation layer (NL) was inserted between AlGaN buffer and an unintentionally doped (UID) GaN layer of an AlGaN/GaN HEMT on Si. The XRD and TEM showed that when the V/III ratio was optimized during the HP-GaN NL growth, the edge dislocation density in the HP-GaN NL layer could be reduced significantly. Experimental results exhibited a lower off-state leakage current, higher maximum ID and Gm (corresponding to 22.5% and 21.7% improvement, respectively), and lower on-state resistance. These results demonstrate that the electrical properties of the AlGaN/GaN HEMT can be improved through the insertion of a HP-GaN NL. Full article
(This article belongs to the Special Issue Wide and Ultra-Wide Bandgap Semiconductor Materials for Power Devices)
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<p>(<b>a</b>) Basic schematic diagram of the Al<sub>0.2</sub>Ga<sub>0.8</sub>N/GaN HEMTs structure on Si substrate without the insertion of the HP-GaN NL layer. (<b>b</b>) Schematic diagram of the Al<sub>0.2</sub>Ga<sub>0.8</sub>N/GaN HEMTs structure on the Si substrate with the insertion of HP-GaN NL.</p>
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<p>(<b>a</b>) In situ measurements of wafer curvature with different V/III ratios of HP-GaN nucleation layer. (<b>b</b>) (Color line) XRD omega scan of GaN films grown on various V/III ratios of the HP-GaN nucleation layer.</p>
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<p>(<b>a</b>) In situ measurements of wafer curvature with different V/III ratios of HP-GaN nucleation layer. (<b>b</b>) (Color line) XRD omega scan of GaN films grown on various V/III ratios of the HP-GaN nucleation layer.</p>
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<p>AFM morphology analysis at different growth steps in Sample B3 after (<b>a</b>) AlGaN buffer, (<b>b</b>) HP-GaN NL 400s, (<b>c</b>) HP-GaN NL 800s, and (<b>d</b>) the growth of the AlGaN/GaN HEMT structure. (<b>e</b>) In situ measurements of reflectance (405 and 950 nm) during the growth of Sample B3.</p>
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<p>AFM morphology analysis at different growth steps in Sample B3 after (<b>a</b>) AlGaN buffer, (<b>b</b>) HP-GaN NL 400s, (<b>c</b>) HP-GaN NL 800s, and (<b>d</b>) the growth of the AlGaN/GaN HEMT structure. (<b>e</b>) In situ measurements of reflectance (405 and 950 nm) during the growth of Sample B3.</p>
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<p>STEM cross-sectional images under bright-field conditions (<b>a</b>); cross-sectional TEM images of the whole epitaxial structure under weak-beam dark-field conditions of (<b>b</b>) g = [0002] and (<b>c</b>) g = [1-100]. (<b>d</b>) SIMS depth of O and C impurity from the GaN to AlN buffer in Sample B3. The inset shows HP-GaN between UID-GaN and AlGaN buffer layers.</p>
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<p>(<b>a</b>) I<sub>D</sub>−V<sub>D</sub> of Sample A and Sample B3, V<sub>g</sub> from +2 to −10 V, step = −2 V (V<sub>DS</sub> from 0 to 15 V, step = 0.1 V); (<b>b</b>) I<sub>D</sub>−G<sub>m</sub> electron characteristics of Sample A(dashed lines) and Sample B3(solid lines) (V<sub>G</sub> from −10 to 0 V, step = 0.1 V, V<sub>DS</sub> keep at 10 V); (<b>c</b>) subthreshold characteristics of Sample A and Sample B3; (<b>d</b>) device characteristic of off-state leakage current, V<sub>D</sub> from 0 to 200 V, step = 0.5 V. V<sub>G</sub> = −8 V; (<b>e</b>) dynamic R<sub>on</sub> at different drain bias voltages, V<sub>DS</sub> from 0 to 100 V, step = 20 V.</p>
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16 pages, 2822 KiB  
Article
Precise Determination of Magnetic Gradient Relaxation of Coupled Atomic Spin Ensemble in Spin-Exchange Relaxation-Free Co-Magnetometer
by Xiujie Fang, Kai Wei, Wenfeng Fan, Siran Li, Qian Cao, Wei Quan, Yueyang Zhai and Zhisong Xiao
Photonics 2023, 10(4), 400; https://doi.org/10.3390/photonics10040400 - 3 Apr 2023
Cited by 1 | Viewed by 1493
Abstract
Inside a spin-exchange relaxation-free (SERF) co-magnetometer with a high-pressure buffer gas atomic cell, the magnetic field gradient causes the decoherence of atomic spins to produce magnetic-field gradient relaxation. This paper presents a new method for the accurate measurement of magnetic field gradient relaxation [...] Read more.
Inside a spin-exchange relaxation-free (SERF) co-magnetometer with a high-pressure buffer gas atomic cell, the magnetic field gradient causes the decoherence of atomic spins to produce magnetic-field gradient relaxation. This paper presents a new method for the accurate measurement of magnetic field gradient relaxation of alkali metal atoms and inert atoms of strongly coupled spin systems under triaxial magnetic field gradients in the K-Rb-21Ne co-magnetometer. The magnetic field gradient relaxation of alkali metal atoms is measured using a step magnetic field modulation method, and the magnetic field gradient relaxation of inert atoms is measured using a combined free induction decay and spin growth method. The method does not require the use of large background magnetic fields and RF fields to maintain the atoms in the SERF state, does not require additional optics, and is not affected by the pumping or detecting of optical power. A kinetic model that considers a large electron-equivalent magnetic field was designed and a gradient relaxation model was developed. The quadratic coefficients of the experimentally measured gradient relaxation curves fit the theoretical model well over the range of the applied magnetic field gradients, confirming the validity of the proposed method. Full article
(This article belongs to the Special Issue Optically Pumped Magnetometer and Its Application)
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<p><span class="html-italic">B<sub>y</sub></span> and <span class="html-italic">B<sub>x</sub></span> step magnetic field modulation output response of SERF co-magnetometer. (<b>a</b>) <span class="html-italic">B<sub>y</sub></span> modulation output response at different residual magnetic fields. (<b>b</b>) <span class="html-italic">B<sub>x</sub></span> modulation output response at different residual magnetic fields.</p>
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<p>Experimental setup. λ/4: quarter-wave plate. λ/2: half-wave plate. PD: photodetector. PBS: polarized beam splitter. PEM: photoelastic modulator.</p>
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<p>Experimental measurements of the stepped magnetic field modulated output response with an applied <span class="html-italic">z</span>-axis magnetic field gradient.</p>
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<p>Experimental results of magnetic gradient relaxation of alkali metal atoms in coupled spin ensemble under applied <span class="html-italic">z</span>-axis magnetic gradient. (<b>a</b>) The experimental measurement results; (<b>b</b>) The simulation results based on the theoretical Equation (15).</p>
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<p>Experimental measurement of transverse relaxation rate of inert atoms in strongly coupled spin ensemble without magnetic field gradient.</p>
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<p>Experimental measurement of longitudinal relaxation rate of inert atoms in strongly coupled spin ensemble without magnetic field gradient.</p>
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<p>Measured relaxation times of the longitudinal magnetic gradient of inert atoms with an applied <span class="html-italic">x</span>- and <span class="html-italic">y</span>-axis magnetic field gradient, respectively, and curves calculated by the theoretical equations.</p>
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<p>Measured relaxation times of transverse magnetic field gradients of inert atoms with <span class="html-italic">z</span>-axis magnetic field gradients applied alone and curves calculated from theoretical equations.</p>
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15 pages, 4662 KiB  
Article
Performance Enhancement of an Upflow Anaerobic Dynamic Membrane Bioreactor via Granular Activated Carbon Addition for Domestic Wastewater Treatment
by Le Liu, Yisong Hu, Yi Qu, Dongxing Cheng, Yuan Yang, Rong Chen and Jiayuan Ji
Sustainability 2023, 15(2), 1055; https://doi.org/10.3390/su15021055 - 6 Jan 2023
Cited by 1 | Viewed by 1864
Abstract
Developing low-carbon advanced processes for sustainable wastewater treatment is of great importance to increase bioenergy recovery and to reduce the greenhouse gas effect. In this study, the influence of adding 25 g/L of granular activated carbon (GAC) on the process performance was studied [...] Read more.
Developing low-carbon advanced processes for sustainable wastewater treatment is of great importance to increase bioenergy recovery and to reduce the greenhouse gas effect. In this study, the influence of adding 25 g/L of granular activated carbon (GAC) on the process performance was studied with a lab-scale GAC amended anaerobic dynamic membrane (G-AnDMBR) used to treat real domestic wastewater, which was compared to a control bioreactor without the GAC addition (C-AnDMBR). Due to the initial adsorption effect of GAC and the high microbial activity of the attached biomass of GAC, the G-AnDMBR achieved a better removal of the total chemical oxygen demand (TCOD) and turbidity compared to the C-AnDMBR, with the average removal rate increasing from 82.1% to 86.7% and from 88.7% to 93.2%. The gaseous methane production increased from 0.08 ± 0.05 to 0.14 ± 0.04 L/d, and the total methane production rate was enhanced from 0.21 ± 0.11 to 0.23 ± 0.09 LCH4/gCOD. Thus, the treatment performance of the G-AnDMBR was superior to that of the C-AnDMBR, and the addition of GAC could improve the effluent quality during the initial dynamic membrane formation process. In addition, the buffering effect of GAC made the G-AnDMBR maintain a relatively stable solution environment. The G-AnDMBR showed a transmembrane pressure (TMP) increasing rate of 0.045 kPa/d, which was obviously lower than that of the C-AnDMBR (0.057 kPa/d) because the nonfluidized GAC could trap fine sludge particles and adsorb soluble extracellular polymer substances (SEPSs), thus inhibiting the over formation of the dynamic membrane layer. A microbial property analysis indicated that GAC induced a change in the microbial community and enhanced the gene abundance of type IV pili and that it also potentially accelerated the direct interspecific electron transfer (DIET) among syntrophic bacteria and methanogens by enriching specific functional microorganisms. The results indicated that the integration of GAC and the AnDMBR process can be a cost-effective and promising alternative for domestic wastewater treatment and bioenergy recovery. Full article
(This article belongs to the Special Issue Sustainable Technologies by Advanced Anaerobic Wastewater Treatment)
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<p>Pollutant removal and pH variation of the AnDMBRs: (<b>a</b>) COD removal; (<b>b</b>) protein removal; (<b>c</b>) polysaccharide removal and (<b>d</b>) variation in pH.</p>
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<p>Biogas production of the AnDMBRs: (<b>a</b>) biogas production and (<b>b</b>) biogas composition.</p>
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<p>Filtration performance of the AnDMBRs: (<b>a</b>) the variation of TMP and flux and (<b>b</b>) the variation of turbidity.</p>
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<p>Morphology and composition of dynamic membrane and GAC: (<b>a</b>) digital pictures of dynamic membrane; (<b>b</b>) SEM pictures of dynamic membrane; (<b>c</b>) SEM pictures of GAC; (<b>d</b>) EDX profile of dynamic membrane and (<b>e</b>) EDX profile of GAC.</p>
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<p>Metagenomic analysis of microorganism in sludge samples: (<b>a</b>) bacterial phylum; (<b>b</b>) archaea genus and (<b>c</b>) genetic composition of type IV pilus assembly proteins. (S1, S2, GB, DM1 and DM2 refer to the sludge of C-AnDMBR and G-AnDMBR, the GAC- biofilm and the DM layer of C-AnDMBR and G-AnDMBR, respectively.)</p>
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<p>Metagenomic analysis of microorganism in sludge samples: (<b>a</b>) bacterial phylum; (<b>b</b>) archaea genus and (<b>c</b>) genetic composition of type IV pilus assembly proteins. (S1, S2, GB, DM1 and DM2 refer to the sludge of C-AnDMBR and G-AnDMBR, the GAC- biofilm and the DM layer of C-AnDMBR and G-AnDMBR, respectively.)</p>
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16 pages, 4655 KiB  
Article
In Situ Photoacoustic Detection System for SO2 in High-Pressure SF6 Buffer Gas Using UV LED
by Wei Hu, Kang Li, Tunan Chen, Zongjia Qiu and Guoqiang Zhang
Sensors 2022, 22(24), 9846; https://doi.org/10.3390/s22249846 - 14 Dec 2022
Cited by 6 | Viewed by 1801
Abstract
Sulfur dioxide (SO2) is a key indicator for fault diagnosis in sulfur hexafluoride (SF6) gas-insulated equipment. In this work, an in situ photoacoustic detection system using an ultraviolet (UV) LED light as the excitation source was established to detect [...] Read more.
Sulfur dioxide (SO2) is a key indicator for fault diagnosis in sulfur hexafluoride (SF6) gas-insulated equipment. In this work, an in situ photoacoustic detection system using an ultraviolet (UV) LED light as the excitation source was established to detect SO2 in high-pressure SF6 buffer gas. The selection of the SO2 absorption band is discussed in detail in the UV spectral regions. Based on the result of the spectrum selection, a UV LED with a nominal wavelength of 285 nm and a bandwidth of 13 nm was selected. A photoacoustic cell, as well as a high-pressure sealed gas vessel containing it, were designed to match the output optical beam and to generate a PA signal in the high-pressure SF6 buffer gas. The performance of the proposed system was assessed in terms of linearity and detection limit. An SO2 detection limit (1σ) of 0.17 ppm was achieved. Additionally, a correction method was supplied to solve PA signal derivation induced by pressure fluctuation. The method can reduce the derivation from about 5% to 1% in the confirmation experiment. Full article
(This article belongs to the Section Fault Diagnosis & Sensors)
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<p>Schematic diagram of PAS.</p>
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<p>The PA cell constant along with gas pressure.</p>
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<p>Function <span class="html-italic">f(P)</span> changes along with gas pressure.</p>
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<p>Absorption characteristics of SO<sub>2</sub> in the range from 180 nm to 400 nm.</p>
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<p>The emission spectrum of LED and absorption characteristics of SO<sub>2</sub> in the range from 250 nm to 330 nm.</p>
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<p>Three-dimensional model of the designed gas vessel and PA cell.</p>
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<p>UV LED-based SO<sub>2</sub> detection system: (<b>a</b>) schematic diagram and (<b>b</b>) practicality picture.</p>
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<p>Detection properties of the SO<sub>2</sub> detection system: (<b>a</b>) the linearity of the PA signal response and (<b>b</b>) series of measured results of different SO<sub>2</sub> concentrations.</p>
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<p>Allan variance analysis of the detection system.</p>
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<p>Frequency of the 50 times test results for pure SF<sub>6</sub> gas.</p>
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<p>Schematic diagram of the connection between measured equipment and the proposed SO<sub>2</sub> detection device.</p>
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<p>Linear fitting of gas pressure and PA signal.</p>
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<p>Linearity property of <span class="html-italic">k<sub>p</sub></span> vs. gas concentration c.</p>
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<p>Flowchart of the correction iteration process.</p>
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2 pages, 218 KiB  
Abstract
Capillary Electrophoresis–Tandem Mass Spectrometry as an Analytical Technique for the Simultaneous Determination of Multiclass Cyanotoxins
by Rocío Carmona-Molero, María Mar Aparicio-Muriana, Francisco J. Lara, Rafael Cazorla-Vílchez, Maykel Hernández-Mesa, Ana M. García-Campaña and Monsalud del Olmo-Iruela
Biol. Life Sci. Forum 2022, 14(1), 29; https://doi.org/10.3390/blsf2022014029 - 22 Jul 2022
Viewed by 1166
Abstract
Cyanotoxins are toxic metabolites produced by most cyanobacteria. In recent years, the occurrence of cyanobacterial blooms in aquatic ecosystems has temporally and spatially increased because of nutrient oversupply caused by human and also by climatic changes. This increase has a negative impact on [...] Read more.
Cyanotoxins are toxic metabolites produced by most cyanobacteria. In recent years, the occurrence of cyanobacterial blooms in aquatic ecosystems has temporally and spatially increased because of nutrient oversupply caused by human and also by climatic changes. This increase has a negative impact on water quality, ecosystem integrity, and human health. Cyanotoxins constitute a group of compounds with diverse physicochemical properties and their presence in drinkable, fishable, and recreational water is the main health-damaging cause. They are also able to bioaccumulate in plants and vegetables irrigated with contaminated water. Research on the development of suitable analytical methods is needed to establish early-warning strategies for the improved protectionof humans and ecosystems health. Liquid chromatography coupled with mass spectrometry (LC-MS) has been the preferred option for the control of these compounds, mainly using reverse-phase mode or hydrophilic interaction liquid chromatography (HILIC) in order to separate multiclass cyanotoxins of varying polarity, which cannot be handled by the commonly used reverse phase columns. In this work, we propose the use of capillary electrophoresis (CE) coupled with tandem mass spectrometry using triple quadrupole and positive electrospray ionization (CE-(ESI)-MS/MS) to determine a mixture of cyanotoxins with different polarity. CE is an advantageous alternative to LC given its short analysis times, high resolution, low sample and reagent volumes, and the use of silica capillaries and buffers as separation media, resulting in lower cost and low environmental impact. Moreover, CE allows the analysis of molecules hardly affordable by LC, such as polar and very similar compounds (e.g., isomers). The method is designed for the simultaneous determination of eight cyanotoxins belonging to three different classes: cyclic peptides (microcystin-LR, microcystin-RR, and nodularin), alkaloids (cylindrospermopsin, anatoxin-a), and three non-protein amino acids isomers (β-methylamino-L-alanine, 2,4-diaminobutyric acid, and N-(2-aminoethyl) glycine). Separation was achieved using an acidic background electrolyte (BGE) consisting in 2 M of formic acid (FA) and 20% acetonitrile in water. The proper separation and resolution of the three non-protein amino acid isomers was one of the main challenges of the method. This was overcome by applying a voltage of 30 kV in a 90 cm length capillary at 20 °C. Parameters affecting MS detection and the sheath–liquid interface were also studied. Finally, the fixed values were: a sheath gas flow rate of 5 L/min at 195 °C; sheath–liquid consists of MeOH/H2O/FA (50:49.95:0.05 v/v/v), a flow rate of 15 μL/min; and a nozzle voltage of 2000 V; N2 dry gas rate of 11 L/min at 150 °C; a nebulizer pressure of 10 psi; and a capillary voltage of 2000 V. Online pre-concentration approaches were tested in order to achieve higher sensitivity, obtaining a enrichment factor of 4 with a mixed technique of pH-junction and Field Amplied Sample Stacking (FASS). Full article
21 pages, 4098 KiB  
Article
Effect of Natural Ilmenite on the Solid Biomass Conversion of Inhomogeneous Fuels in Small-Scale Bubbling Fluidized Beds
by Tanja Schneider, Dominik Müller and Jürgen Karl
Energies 2022, 15(8), 2747; https://doi.org/10.3390/en15082747 - 8 Apr 2022
Cited by 4 | Viewed by 1586
Abstract
The application of oxygen carriers as alternative bed material in fluidized bed combustion originates from chemical lopping processes. They serve as oxygen transport agents undergoing consecutive redox cycles. Thereby, oxygen carriers can provide surplus oxygen in oxygen-lean areas of fluidized bed combustion processes. [...] Read more.
The application of oxygen carriers as alternative bed material in fluidized bed combustion originates from chemical lopping processes. They serve as oxygen transport agents undergoing consecutive redox cycles. Thereby, oxygen carriers can provide surplus oxygen in oxygen-lean areas of fluidized bed combustion processes. In turn, re-oxidation takes place in oxygen-rich reactor parts. A more homogeneous combustion and reduced CO emissions follow during steady-state operation. However, especially regarding solid biomass conversion, inhomogeneous fuel qualities result in transient combustion conditions. Therefore, this research deals with the influence of the oxygen carrier ilmenite on solid biomass conversion. Separated batch experiments with methane (volatile), char and wood pellets took place in a laboratory bubbling fluidized bed reactor. They reveal that ilmenite enhances the in-bed CO2 yield by up to 63% during methane combustion. Batch char experiments confirm that solid–solid reactions with ilmenite are negligible. However, heterogeneous gas–solid reactions reduce the O2 partial pressure and limit the char conversion rate. The batch wood pellet experiments show that the ilmenite oxygen buffering effect is mitigated due to high local oxygen demand around the pellets and limited pellet distribution in the bed. Finally, the continuous operation in a 100 kWth BFB with inhomogeneous fuel input indicates a higher in-bed fuel conversion and confirms lower CO emissions and less fluctuation in the flue gas during inhomogeneous fuel supply. Full article
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<p>Schematic illustration of the pellet mass, theoretical oxygen consumption and oxygen supply during wood pellet combustion.</p>
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<p>Setup of (<b>a</b>) laboratory BFB model reactor for the injection of methane (to simulate “volatiles” combustion) and solid wood and char pellets (measurement series 1–4) and (<b>b</b>) 100 kW<sub>th</sub> BFB unit for the experiments with discontinuous solid fuel feed (measurement series 5).</p>
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<p>Samples of (<b>a</b>) wood pellets (measurement series no. 3–5) and (<b>b</b>) char pellets (measurement series no. 2).</p>
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<p>Dry gas composition measured at the fluidized bed surface depending on the excess air ratio for (<b>a</b>) silica sand and (<b>b</b>) ilmenite with methane as fuel (measurement series no. 1).</p>
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<p>Dry gas composition measured at the ilmenite fluidized bed surface with char pellets as fuel during alternating fluidization mediums (N<sub>2</sub> and air).</p>
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<p>Dry gas composition measured at the fluidized bed surface for (<b>a</b>) silica sand and (<b>b</b>) ilmenite with char pellets as fuel (measurement series no. 2).</p>
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<p>Dry gas composition measured at the fluidized bed surface for (<b>a</b>) silica sand and (<b>b</b>) ilmenite with single wood pellets (measurement series no. 3).</p>
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<p>Dry gas composition measured 100 mm above the fluidized bed surface (h<sub>m</sub> = 330 mm) for (<b>a</b>) silica sand and (<b>b</b>) ilmenite with single wood pellets (measurement series no. 3).</p>
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<p>Dry gas composition measured at the fluidized bed surface for (<b>a</b>) silica sand and (<b>b</b>) ilmenite with batch wood pellets (measurement series no. 4).</p>
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<p>Dry gas composition measured 100 mm above the fluidized bed surface (hm = 330 mm) for (<b>a</b>) silica sand and (<b>b</b>) ilmenite with batch wood pellets (measurement series no. 4).</p>
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<p>Adopted schematic illustration of the pellet mass, theoretical oxygen consumption and oxygen supply during wood pellet combustion in the presence of ilmenite (OCAC).</p>
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<p>Exemplary CO concentration in the flue gas during transient fuel dosage during silica sand and ilmenite measurements (800°, λc = 1.5 and fuel input cycle time = 40 s).</p>
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15 pages, 8692 KiB  
Article
A New Method for Capturing CO2 from Effluent Gases Using a Rice-Based Product
by Ameera F. Mohammad, Abeer F. Dar Saleh, Maatouk Khoukhi and Ali H. Al-Marzouqi
Energies 2022, 15(6), 2287; https://doi.org/10.3390/en15062287 - 21 Mar 2022
Cited by 4 | Viewed by 2451
Abstract
In 2013, UAE imported around 772 million kilograms of rice, making it one of the largest consumers of this popular grain in the world. However, 40% of rice available in the market is discarded, contributing to the country’s CO2 footprint. Given that [...] Read more.
In 2013, UAE imported around 772 million kilograms of rice, making it one of the largest consumers of this popular grain in the world. However, 40% of rice available in the market is discarded, contributing to the country’s CO2 footprint. Given that CO2 emissions are recognized as a significant contributor to climate change and efforts aimed at their reduction are proving insufficient for combatting the global increase in temperature, various approaches aimed at its removal from the atmosphere have been proposed. The goal of this study is to contribute to this initiative by proposing a new method for CO2 removal based on a special gas contact device filled with buffered puffed rice cakes obtained by heating in a purposely designed sealed chamber at high pressure to obtain layers with 9−12 mm thickness. The resulting cakes are subsequently immersed in a sodium hydroxide liquor (0.25−2.5 M) to increase the moisture content to 5% and pH to >11.0. In the experiments, different rice structures (stacked layers, rice grains, and multi-spaced layers) were tested, varying the CO2 percentage in the simulated effluent gas (1−15%). The highest CO2 uptake value (7.52 × 10−3 mole CO2/cm2 rice cake surface area) was achieved using 10% CO2 and a 500 mL/min flow rate with rice cakes of 80 mm diameter, comprising 12 mm thick layers that occupied 20% of the device volume. These results indicate that the proposed design exhibits high CO2 removal efficiency and should be further optimized in future investigations. Full article
(This article belongs to the Topic Advances in Clean Energies)
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<p>Rice cake puffing process.</p>
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<p>Final produced samples size, shape, and thickness.</p>
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<p>Rice cakes dipped in sodium hydroxide solution.</p>
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<p>Fresh puffed rice sample and sample treated with sodium hydroxide.</p>
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<p>Model designed for CO<sub>2</sub> capturing using buffered (<b>a</b>) multi-spaced puffed rice cakes (MSPRC), (<b>b</b>) stacked puffed rice cakes (SPRC), and (<b>c</b>) puffed rice grains (PRG).</p>
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<p>Picture of the contactor system loaded with the operation options, (<b>a</b>) staked rice cake layers (<b>b</b>) puffed rice grains, and (<b>c</b>) multi-spaced layers in operation conditions, at a gas flow rate of (300 mL/min).</p>
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<p>Picture of the gas flow through stacked layers of rice cake layers showing the trapped gas bubbles inside the rice structure.</p>
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<p>X-ray diffraction patterns of fresh puffed rice and treated puffed rice.</p>
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<p>Cross-section SEM images of (<b>a</b>) fresh puffed rice samples and (<b>b</b>) puffed rice samples treated with sodium hydroxide.</p>
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<p>FTIR spectra of fresh puffed rice samples and samples treated with sodium hydroxide.</p>
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<p>TGA and DTG curves of fresh puffed and treated rice cakes.</p>
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<p>(<b>a</b>) CO<sub>2</sub> removal percentage versus time and (<b>b</b>) the calculated area under the curve at a gas flow rate of 500 mL/min, room temperature, and atmospheric pressure.</p>
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<p>3D plot showing the effect of NaOH solution molarity and gas flow rate (mL/min) on the CO<sub>2</sub> moles loaded per unit surface area of the puffed rice cake using the MSPRC model.</p>
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9 pages, 16144 KiB  
Article
The Microfabricated Alkali Vapor Cell with High Hermeticity for Chip-Scale Atomic Clock
by Shuo Jia, Zhiyuan Jiang, Binbin Jiao, Xiaochi Liu, Yijie Pan, Zhenfei Song and Jifeng Qu
Appl. Sci. 2022, 12(1), 436; https://doi.org/10.3390/app12010436 - 3 Jan 2022
Cited by 11 | Viewed by 2603
Abstract
Herein, a microfabricated millimeter-level vapor alkali cell with a high hermeticity is fabricated through a wet etching and single-chip anodic bonding process. The vapor cell, containing Rb and N2, was investigated in a coherent population trapping (CPT) setup for the application [...] Read more.
Herein, a microfabricated millimeter-level vapor alkali cell with a high hermeticity is fabricated through a wet etching and single-chip anodic bonding process. The vapor cell, containing Rb and N2, was investigated in a coherent population trapping (CPT) setup for the application of a chip-scale atomic clock (CSAC). The contrast of CPT resonance is up to 1.1% within the only 1 mm length of light interacting with atom. The effects of some critical external parameters on the CPT resonance, such as laser intensity, cell temperature, and buffer gas pressure, are thoroughly studied and optimized. The improved microfabricated vapor cell also exhibited great potential for other chip-scale atomic devices. Full article
(This article belongs to the Special Issue Advances in Intelligent Robots and Precision Machining)
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<p>(<b>A</b>) Alkali vapor cell and (<b>B</b>) SEM image of the channel between the two cavities.</p>
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<p>Fabrication process of the two cavities of the silicon wafer with vapor cell (<b>A</b>) mask deposition, (<b>B</b>) photolithography, (<b>C</b>) ICP-etching for Si<sub>3</sub>N<sub>4</sub> and SiO<sub>2</sub>. (<b>D</b>) Two cavities by anisotropical etching. (<b>E</b>) The microchannel between two cavities. (<b>F</b>) Si<sub>3</sub>N<sub>4</sub> and SiO<sub>2</sub> removing.</p>
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<p>(<b>A</b>) Sealing process of vapor cell: Single-sided anodic bonding and Rb dispenser storage, Second-sided bonding, dispenser activating and (<b>B</b>) single-chip bonding by the customized bonder with electrode and pressure device, and (<b>C</b>) single-chip bonding with upper glass and lower silicon.</p>
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<p>(<b>A</b>)The activating system with a 808 nm diode laser source; (<b>B</b>,<b>D</b>) the vapor cell after activating by laser; and (<b>C</b>) the Rb elemental on the inner-surface of the optical cavity.</p>
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<p>Schematic of the table-top CPT system with MEMS cell. EOM: electro-optic modulator. PD: photodiode.</p>
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<p>Optical absorption lines obtained in a cm-scale pure Rb reference cell (Pink dot) compared to a Rb-N<sub>2</sub> microfabricated cell heated at 90 °C with laser power from 40 μW to 110 μW.</p>
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<p>Typical CPT resonance obtained in a Rb-N<sub>2</sub> cell (inset: simplified schematic of three-level system involved in Rb cells CPT resonances, Γ<sup>*</sup>: linewidth of the optical resonance). The red line is a Lorentzian fit to the experimental data (black dot).</p>
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<p>CPT linewidth as a function of laser power at different pressure (50–70–90 Torr) and the linear fitting curve.</p>
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<p>The ratio contrast/linewidth as a function of (<b>A</b>) laser power and (<b>B</b>) temperature.</p>
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18 pages, 4620 KiB  
Article
An Analysis on the Compressed Hydrogen Storage System for the Fast-Filling Process of Hydrogen Gas at the Pressure of 82 MPa
by Ji-Qiang Li, Ji-Chao Li, Kyoungwoo Park, Seon-Jun Jang and Jeong-Tae Kwon
Energies 2021, 14(9), 2635; https://doi.org/10.3390/en14092635 - 4 May 2021
Cited by 23 | Viewed by 5360
Abstract
During the fast-filling of a high-pressure hydrogen tank, the temperature of hydrogen would rise significantly and may lead to failure of the tank. In addition, the temperature rise also reduces hydrogen density in the tank, which causes mass decrement into the tank. Therefore, [...] Read more.
During the fast-filling of a high-pressure hydrogen tank, the temperature of hydrogen would rise significantly and may lead to failure of the tank. In addition, the temperature rise also reduces hydrogen density in the tank, which causes mass decrement into the tank. Therefore, it is of practical significance to study the temperature rise and the amount of charging of hydrogen for hydrogen safety. In this paper, the change of hydrogen temperature in the tank according to the pressure rise during the process of charging the high-pressure tank in the process of a 82-MPa hydrogen filling system, the final temperature, the amount of filling of hydrogen gas, and the change of pressure of hydrogen through the pressure reducing valve, and the performance of heat exchanger for cooling high-temperature hydrogen were analyzed by theoretical and numerical methods. When high-pressure filling began in the initial vacuum state, the condition was called the “First cycle”. When the high-pressure charging process began in the remaining condition, the process was called the “Second cycle”. As a result of the theoretical analysis, the final temperatures of hydrogen gas were calculated to be 436.09 K for the first cycle of the high-pressure tank, and 403.55 for the second cycle analysis. The internal temperature of the buffer tank increased by 345.69 K and 32.54 K in the first cycle and second cycles after high-pressure filling. In addition, the final masses were calculated to be 11.58 kg and 12.26 kg for the first cycle and second cycle of the high-pressure tank, respectively. The works of the paper can provide suggestions for the temperature rise of 82 MPa compressed hydrogen storage system and offer necessary theory and numerical methods for guiding safe operation and construction of a hydrogen filling system. Full article
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<p>Hydrogen compression system.</p>
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<p>High-pressure tank for hydrogen storage</p>
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<p>Simplified high-pressure tank modeling.</p>
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<p>Temperature distributions for a counter-flow heat exchanger.</p>
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<p>Pressure reducing valve.</p>
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<p>Joule–Thomson effect.</p>
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<p>Temperature differences of the wall reference on the side of the hydrogen storage tank.</p>
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<p>Final temperature during the time with different equations.</p>
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<p>The experimental results of the pressure measurement over time. (<b>a</b>) The pressure value of the high-pressure tank for the second cycle; (<b>b</b>) pressure value of the buffer tank for the second cycle.</p>
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<p>The theoretical results of the temperature for the second cycle. (<b>a</b>) Temperature values of the high-pressure tank, and (<b>b</b>) temperature values of the buffer tank.</p>
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<p>The heat exchanger. (<b>a</b>) Counter-flow heat exchanger; (<b>b</b>) working principle diagram of the heat exchanger.</p>
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