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10 pages, 10160 KiB  
Article
Dual-Band Antenna Array Fed by Ridge Gap Waveguide with Dual-Periodic Interdigital-Pin Bed of Nails
by Boju Chen, Xiaoming Chen, Xin Cheng, Yiran Da, Xiaobo Liu, Steven Gao and Ahmed A. Kishk
Sensors 2024, 24(16), 5117; https://doi.org/10.3390/s24165117 - 7 Aug 2024
Viewed by 750
Abstract
A dual-band (K-/Ka-band) antenna array is presented. An ultra-wideband antenna element in the shape of a double-ridged waveguide is used as a radiation slot, and a novel dual-periodic ridge gap waveguide (RGW) with an interdigital-pin bed of nails (serving as a filter) is [...] Read more.
A dual-band (K-/Ka-band) antenna array is presented. An ultra-wideband antenna element in the shape of a double-ridged waveguide is used as a radiation slot, and a novel dual-periodic ridge gap waveguide (RGW) with an interdigital-pin bed of nails (serving as a filter) is used to realize dual-band operation. By periodically arranging the pins of two different heights in two dimensions, the proposed RGW with interdigital-pin bed of nails is able to realize and flexibly adjust two passbands. The widely used GW-based back cavity boosts the realized gain and simplifies the feed network design. A 4 × 4 prototype array was designed, fabricated, and measured. The results show that the array has two operating bands at 24.5–26.4 GHz and 30.3–31.5 GHz, and the realized gain can reach 19.2 dBi and 20.4 dBi, respectively. Meanwhile, there is a very significant gain attenuation at stopband. Full article
(This article belongs to the Special Issue Recent Trends and Developments in Antennas: Second Edition)
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Figure 1

Figure 1
<p>Dual-periodic interdigital-pin GW unit cell with <math display="inline"><semantics> <mrow> <msub> <mi>d</mi> <mn>1</mn> </msub> <mo>=</mo> <mn>3.2</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>d</mi> <mn>2</mn> </msub> <mo>=</mo> <mn>1.8</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>w</mi> <mi>r</mi> </msub> <mo>=</mo> <mn>1.6</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>w</mi> <mi>p</mi> </msub> <mo>=</mo> <mi>g</mi> <mo>=</mo> <mn>1.2</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, and <math display="inline"><semantics> <mrow> <mi>h</mi> <mo>=</mo> <mn>3.3</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>.</p>
Full article ">Figure 2
<p>Dispersion diagram of the unit cell given by <a href="#sensors-24-05117-f001" class="html-fig">Figure 1</a>.</p>
Full article ">Figure 3
<p>(<b>a</b>) Effect of <math display="inline"><semantics> <msub> <mi>d</mi> <mn>2</mn> </msub> </semantics></math> on the cutoff frequency of Mode 3 and Mode 4 with <math display="inline"><semantics> <mrow> <msub> <mi>w</mi> <mi>p</mi> </msub> <mo>=</mo> <mi>g</mi> <mo>=</mo> <mn>1.2</mn> </mrow> </semantics></math> mm. (<b>b</b>) Effect of <math display="inline"><semantics> <msub> <mi>w</mi> <mi>p</mi> </msub> </semantics></math> on stop band with <math display="inline"><semantics> <mrow> <msub> <mi>d</mi> <mn>2</mn> </msub> <mo>=</mo> <mn>1.8</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>.</p>
Full article ">Figure 4
<p>Dual-periodic interdigital-pin RGW with <math display="inline"><semantics> <mrow> <msub> <mi>w</mi> <mi>r</mi> </msub> <mo>=</mo> <mn>1.6</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>h</mi> <mi>r</mi> </msub> <mo>=</mo> <mn>2.8</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, and <math display="inline"><semantics> <mrow> <msub> <mi>g</mi> <mi>r</mi> </msub> <mo>=</mo> <mn>2</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>: (<b>a</b>) geometry and (<b>b</b>) simulated S-parameters.</p>
Full article ">Figure 5
<p>(<b>a</b>) Front view and (<b>b</b>) back view of the exploded proposed 2 × 2-element subarray.</p>
Full article ">Figure 6
<p>Geometries of the antenna parts: (<b>a</b>) radiating slots on the top layer; (<b>b</b>) top view of the cavity. (<b>c</b>) End of the ridge of the feed line (<math display="inline"><semantics> <mrow> <msub> <mi>p</mi> <mi>x</mi> </msub> <mo>=</mo> <mn>15.6</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>p</mi> <mi>y</mi> </msub> <mo>=</mo> <mn>14</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>w</mi> <mrow> <mi>s</mi> <mn>1</mn> </mrow> </msub> <mo>=</mo> <mn>3</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>w</mi> <mrow> <mi>s</mi> <mn>2</mn> </mrow> </msub> <mo>=</mo> <mn>2.47</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>w</mi> <mrow> <mi>s</mi> <mn>3</mn> </mrow> </msub> <mo>=</mo> <mn>4.68</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>w</mi> <mrow> <mi>s</mi> <mn>4</mn> </mrow> </msub> <mo>=</mo> <mn>5</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>l</mi> <mi>s</mi> </msub> <mo>=</mo> <mn>6.3</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>t</mi> <mrow> <mi>r</mi> <mn>1</mn> </mrow> </msub> <mo>=</mo> <mn>2</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>t</mi> <mrow> <mi>r</mi> <mn>2</mn> </mrow> </msub> <mo>=</mo> <mn>1</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>w</mi> <mi>r</mi> </msub> <mo>=</mo> <mn>1.6</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>h</mi> <mi>r</mi> </msub> <mo>=</mo> <mn>2.8</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>h</mi> <mi>s</mi> </msub> <mo>=</mo> <mn>1.75</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>l</mi> <mi>r</mi> </msub> <mo>=</mo> <mn>2.3</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>w</mi> <mi>m</mi> </msub> <mo>=</mo> <mn>1</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>l</mi> <mi>m</mi> </msub> <mo>=</mo> <mn>2.3</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>l</mi> <mi>c</mi> </msub> <mo>=</mo> <mn>6</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>w</mi> <mi>c</mi> </msub> <mo>=</mo> <mn>2</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>).</p>
Full article ">Figure 7
<p>Simulated reflection coefficients of the subarray with <math display="inline"><semantics> <mrow> <msub> <mi>d</mi> <mn>1</mn> </msub> <mo>=</mo> <mn>3.2</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math> and different <math display="inline"><semantics> <msub> <mi>d</mi> <mn>2</mn> </msub> </semantics></math>.</p>
Full article ">Figure 8
<p>Electric field distributions at the feed line at 25, 28, and 30.5 GHz.</p>
Full article ">Figure 9
<p>Configuration of the proposed array: (<b>a</b>) back view and (<b>b</b>) front view of the bottom layer; (<b>c</b>) back view and (<b>d</b>) front view of the middle layer; (<b>e</b>) the top layer.</p>
Full article ">Figure 10
<p>Photograph of the fabricated prototype: (<b>a</b>) front view (left) and back view (right) of each layer; (<b>b</b>) side view of the prototype with a waveguide-to-coaxial converter.</p>
Full article ">Figure 11
<p>Simulated and measured reflection coefficients of the prototype array.</p>
Full article ">Figure 12
<p>Simulated and measured radiation patterns at (<b>a</b>) 25 GHz in the E-plane, (<b>b</b>) 29 GHz (stopband) in the E-plane, (<b>c</b>) 31 GHz in the E-plane, (<b>d</b>) 25 GHz in the H-plane, (<b>e</b>) 29 GHz (stopband) in the H-plane and (<b>f</b>) 31 GHz in the H-plane. Solid lines represent co-polarization, dashed lines represent cross-polarization, red lines represent simulated results, and black lines represent measured results.</p>
Full article ">Figure 13
<p>(<b>a</b>) Simulated and measured realized gains of the prototype array. (<b>b</b>) Simulated and measured aperture efficiencies of the prototype array.</p>
Full article ">Figure 14
<p>Simulated reflection coefficient of the proposed array at different <math display="inline"><semantics> <msub> <mi>d</mi> <mn>2</mn> </msub> </semantics></math> when <math display="inline"><semantics> <mrow> <msub> <mi>w</mi> <mi>p</mi> </msub> <mo>=</mo> <mn>1.2</mn> <mspace width="4.pt"/> <mi>mm</mi> </mrow> </semantics></math>.</p>
Full article ">
13 pages, 3555 KiB  
Article
Ultrasensitive Silicon Photonic Refractive Index Sensor Based on Hybrid Double Slot Subwavelength Grating Microring Resonator
by Kaiwei Lu, Beiju Huang, Xiaoqing Lv, Zan Zhang and Zhengtai Ma
Sensors 2024, 24(6), 1929; https://doi.org/10.3390/s24061929 - 17 Mar 2024
Cited by 2 | Viewed by 1401
Abstract
Silicon photonic-based refractive index sensors are of great value in the detection of gases, biological and chemical substances. Among them, microring resonators are the most promising due to their compact size and narrow Lorentzian-shaped spectrum. The electric field in a subwavelength grating waveguide [...] Read more.
Silicon photonic-based refractive index sensors are of great value in the detection of gases, biological and chemical substances. Among them, microring resonators are the most promising due to their compact size and narrow Lorentzian-shaped spectrum. The electric field in a subwavelength grating waveguide (SWG) is essentially confined in the low-refractive index dielectric, favoring enhanced analyte-photon interactions, which represents higher sensitivity. However, it is very challenging to further significantly improve the sensitivity of SWG ring resonator refractive index sensors. Here, a hybrid waveguide blocks double slot subwavelength grating microring resonator (HDSSWG-MRR) refractive index sensor operating in a water refractive index environment is proposed. By designing a new waveguide structure, a sensitivity of up to 1005 nm/RIU has been achieved, which is 182 nm/RIU higher than the currently highest sensitivity silicon photonic micro ring refractive index sensor. Meanwhile, utilizing a unique waveguide structure, a Q of 22,429 was achieved and a low limit of detection of 6.86 × 10−5 RIU was calculated. Full article
(This article belongs to the Section Optical Sensors)
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Figure 1

Figure 1
<p>(<b>a</b>) Schematic of a hybrid waveguide block double slot subwavelength grating (HDSSWG) waveguide resonator and design parameters of HDSSWG waveguide block. (<b>b</b>) The magnified waveguide cross section exposing in a sensing medium. The model is not in scale.</p>
Full article ">Figure 2
<p>(<b>a</b>) The effective refractive index and group refractive index of DSSWG with four different parameters; (<b>b</b>–<b>d</b>): Electric field magnitude distribution in the x-y plane defined by a cut at z/2 for a DSSWG waveguide with dimensions of L<sub>s</sub> = L<sub>m</sub> = 220 nm, W<sub>t</sub> = W<sub>m</sub> = W<sub>s</sub> = 220 nm, period Λ = 300 nm, and λ = 1550 nm; Distribution of the z-component; (<b>c</b>) Distribution of the y-z plane in the middle of Si block, and (<b>d</b>) Cross-section in the middle of the gap.</p>
Full article ">Figure 3
<p>(<b>a</b>,<b>b</b>) Sensitivity and loss (100 grating periods length) as a function of silicon waveguide block length at 60 nm, 80 nm, 100 nm, 120 nm, 140 nm slot width. (<b>c</b>,<b>d</b>) Sensitivity and loss (100 grating periods length) as a function of duty cycle at 100 nm, 120 nm, 140 nm slot width.</p>
Full article ">Figure 4
<p>(<b>a</b>) Sensitivity and Q factor under different fm. (<b>b</b>) Sensitivity and Q factor as under different W<sub>t</sub>.</p>
Full article ">Figure 5
<p>(<b>a</b>–<b>c</b>) Q, ER and sensitivity of the HDSSWG-MRR under different coupling gaps.</p>
Full article ">Figure 6
<p>Normalized transmission spectrum of the HDSSWG-MRR with the deionized water cladding. The illustration in the green dashed box shows the full width at half height of the main resonant peak more clearly.</p>
Full article ">Figure 7
<p>(<b>a</b>) Electric profile of the HDSSWG-MRR at the resonant wavelength. (<b>b</b>) Electric field magnitude distribution in the y-z in the center of silicon block. (<b>c</b>) Electric field magnitude distribution in the x-y plane defined by a cut at z/2.</p>
Full article ">Figure 8
<p>(<b>a</b>) The transmission spectra of the SWGRMR refractive index sensor in the different refractive index, and (<b>b</b>) The sensing performance of the single SWGRMR sensor.</p>
Full article ">
13 pages, 5292 KiB  
Article
Beamwidth-Reconfigurable Circularly Polarized Slot Antenna Based on Half-Mode Substrate-Integrated Waveguide
by Jeong-Hun Park and Moon-Que Lee
Electronics 2023, 12(2), 363; https://doi.org/10.3390/electronics12020363 - 10 Jan 2023
Cited by 1 | Viewed by 1947
Abstract
Beamwidth-reconfigurable antennas are useful for the intersatellite link of low earth orbit formation flying and constellation, as they prevent unauthorized satellites from eavesdropping. In this article, a circularly polarized slot array antenna based on a half-mode substrate-integrated waveguide (HMSIW) for the K-band beamwidth [...] Read more.
Beamwidth-reconfigurable antennas are useful for the intersatellite link of low earth orbit formation flying and constellation, as they prevent unauthorized satellites from eavesdropping. In this article, a circularly polarized slot array antenna based on a half-mode substrate-integrated waveguide (HMSIW) for the K-band beamwidth reconfiguration is proposed using a new radio frequency (RF) switch structure and a pair of modified −45° and +45° linearly polarized HMSIW slot arrays for the dual operation of a single-pole double-throw (SPDT)/a power divider (PD) and easy integration with other components, respectively. The RF switch structure consists of a T-junction PD, λ/4 lines, and beam lead PIN diodes with current control resistors and without a DC block circuit for low DC power consumption and size reduction. The −45°/+45° linearly polarized HMSIW slot arrays providing linear and circular polarizations (LP and CP, respectively) are operated for CP. The use of a short-circuited termination instead of dissipative termination results in easier integration with other components because the 16 radiating slots consume most of the input power. The dimension of the beamwidth-reconfigurable antenna including the bottom metal layer is 157.2 × 23.3 × 0.254 mm3 (12.5λ0 × 1.86λ0 × 0.0202λ0). The RF switch for the SPDT shows the insertion losses of 1.8–2.3 and 16.7–24.2 dB and an isolation of 20.9–33.4 dB for both outputs within the 10-dB bandwidth. The RF switch for the PD has an insertion loss of 3.9–4.8 dB. The one- and two-antenna operation modes of the CP antenna provide the gains of 9.44 and 6.99 dBic, the axial ratios of 2.24 and 3.47 dB, and the horizontal beamwidths of 35.8° and 78.2°, respectively. Full article
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Figure 1

Figure 1
<p>Beam pattern according to switch state.</p>
Full article ">Figure 2
<p>Proposed RF switch for beamwidth reconfiguration.</p>
Full article ">Figure 3
<p>Equivalent circuit of the slot.</p>
Full article ">Figure 4
<p>Configuration of the proposed HMSIW slot antenna (unit: mm).</p>
Full article ">Figure 5
<p>Surface current distributions with different phases for LHCP: (<b>a</b>) 0°, (<b>b</b>) 90°, (<b>c</b>) 180°, and (<b>d</b>) 270°.</p>
Full article ">Figure 6
<p>Surface current distributions with different phases for RHCP: (<b>a</b>) 0°, (<b>b</b>) 90°, (<b>c</b>) 180°, and (<b>d</b>) 270°.</p>
Full article ">Figure 7
<p>Picture of the fabricated RF switch.</p>
Full article ">Figure 8
<p>S−parameters of the designed RF switch: (<b>a</b>) return loss, (<b>b</b>) insertion loss, and (<b>c</b>) isolation.</p>
Full article ">Figure 9
<p>Picture of the fabricated HMSIW RHCP slot array.</p>
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<p>Configuration of the circular polarizer using a Branch-line coupler.</p>
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<p>(<b>a</b>) S−parameters of the circular polarizer and (<b>b</b>) reflection coefficient of the HMSIW RHCP slot array antenna.</p>
Full article ">Figure 12
<p>Simulated and measured results: (<b>a</b>) horizontal and (<b>b</b>) vertical radiation patterns of the HMSIW RHCP slot array antenna.</p>
Full article ">Figure 13
<p>Picture of the fabricated beamwidth-reconfigurable HMSIW RHCP slot array antenna.</p>
Full article ">Figure 14
<p>Simulated and measured radiation patterns: (<b>a</b>) horizontal and (<b>b</b>) vertical planes for mode 1, (<b>c</b>) horizontal and (<b>d</b>) vertical planes for mode 2, (<b>e</b>) horizontal and (<b>f</b>) vertical planes for mode 3, and (<b>g</b>) horizontal and (<b>h</b>) vertical planes for mode 4.</p>
Full article ">Figure 14 Cont.
<p>Simulated and measured radiation patterns: (<b>a</b>) horizontal and (<b>b</b>) vertical planes for mode 1, (<b>c</b>) horizontal and (<b>d</b>) vertical planes for mode 2, (<b>e</b>) horizontal and (<b>f</b>) vertical planes for mode 3, and (<b>g</b>) horizontal and (<b>h</b>) vertical planes for mode 4.</p>
Full article ">Figure 15
<p>(<b>a</b>) Gain, AR, (<b>b</b>) efficiency, and (<b>c</b>) reflection coefficient of the designed antenna for each mode.</p>
Full article ">Figure 15 Cont.
<p>(<b>a</b>) Gain, AR, (<b>b</b>) efficiency, and (<b>c</b>) reflection coefficient of the designed antenna for each mode.</p>
Full article ">
10 pages, 6146 KiB  
Article
Silicon Nanowire-Assisted High Uniform Arrayed Waveguide Grating
by Shuo Yuan, Jijun Feng, Zhiheng Yu, Jian Chen, Haipeng Liu, Yishu Chen, Song Guo, Fengli Huang, Ryoichi Akimoto and Heping Zeng
Nanomaterials 2023, 13(1), 182; https://doi.org/10.3390/nano13010182 - 30 Dec 2022
Cited by 7 | Viewed by 2761
Abstract
Determining how to improve the non-uniformity of arrayed waveguide grating (AWG) is of great significance for dense wavelength division multiplexing (DWDM) systems. In this work, a silicon nanowire-assisted AWG structure is proposed, which can achieve high uniformity with a low insertion loss. The [...] Read more.
Determining how to improve the non-uniformity of arrayed waveguide grating (AWG) is of great significance for dense wavelength division multiplexing (DWDM) systems. In this work, a silicon nanowire-assisted AWG structure is proposed, which can achieve high uniformity with a low insertion loss. The article compares the effect of nanowire number and shape on uniformity and insertion loss, finding that double nanowires provide the best performance. Double nanowires with a width of 230 nm and length of 3.5 μm can consist of a slot configuration between arrayed waveguides, both connecting to the star coupler and spacing 165 nm from the waveguides. Compared with conventional 8- and 16-channel AWGs with channel spacing of 200 GHz, the non-uniformity of the presented structure can be improved from 1.09 and 1.6 dB to 0.24 and 0.63 dB, respectively. The overall footprint of the device would remain identical, which is 276 × 299 or 258 × 303 μm2 for the 8- or 16-channel AWG. The present high uniformity design is simple and easy to fabricate without any additional insertion loss, which is expected to be widely applied in the highly integrated DWDM systems. Full article
(This article belongs to the Special Issue Nanophotonics and Integrated Optics Devices)
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Figure 1

Figure 1
<p>(<b>a</b>) Schematic of the nanowire-assisted AWG structure with (<b>b</b>,<b>c</b>) for the magnified view of arrayed waveguides and star coupler, respectively. (<b>d</b>) Waveguide platform and fundamental TE mode.</p>
Full article ">Figure 2
<p>Simulated non-uniformity with the variation of (<b>a</b>) <span class="html-italic">G</span><sub>1</sub>, (<b>b</b>) <span class="html-italic">W</span><sub>1</sub> and (<b>c</b>) <span class="html-italic">L</span><sub>3</sub>. Light intensity distribution along the image plane of AWG with different values of (<b>d</b>) <span class="html-italic">G</span><sub>1</sub>, (<b>e</b>) <span class="html-italic">W</span><sub>1</sub> and (<b>f</b>) <span class="html-italic">L</span><sub>3</sub>.</p>
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<p>Simulated non-uniformity and insertion loss for all output channels of (<b>a</b>) 8 and (<b>b</b>) 16-channel nanowire-assisted AWG with the variation of <span class="html-italic">N</span><sub>1</sub>.</p>
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<p>Simulated non-uniformity and insertion loss for all output channels of (<b>a</b>) 8 and (<b>b</b>) 16-channel nanowire-assisted AWG with the variation of the diffraction order <span class="html-italic">m</span>.</p>
Full article ">Figure 5
<p>(<b>a</b>) Light intensity distribution along the image plane with conventional design and uniformity-improved design. Calculated electric field distribution of (<b>b</b>) the input star coupler and (<b>c</b>) the output star coupler.</p>
Full article ">Figure 6
<p>Simulated partial transmission spectra with the conventional and the uniformity-improved structure for (<b>a</b>,<b>b</b>) 8 and (<b>c</b>,<b>d</b>) 16-channel AWG. Inset: Simulated complete transmission spectra.</p>
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<p>Simulated non-uniformity for (<b>a</b>) 8 and (<b>b</b>) 16-channel nanowire-assisted AWG with the variation of Δ<span class="html-italic">W</span><sub>1</sub>, Δ<span class="html-italic">G</span><sub>1</sub> and Δ<span class="html-italic">L</span><sub>3</sub>.</p>
Full article ">
13 pages, 4501 KiB  
Article
Simulation of a High-Performance Polarization Beam Splitter Assisted by Two-Dimensional Metamaterials
by Ruei-Jan Chang and Chia-Chien Huang
Nanomaterials 2022, 12(11), 1852; https://doi.org/10.3390/nano12111852 - 28 May 2022
Cited by 5 | Viewed by 2532
Abstract
It is challenging to simultaneously consider device dimension, polarization extinction ratio (PER), insertion loss (IL), and operable bandwidth (BW) to design a polarization beam splitter (PBS) that is extensively used in photonic integrated circuits. The function of a PBS is to separate polarizations [...] Read more.
It is challenging to simultaneously consider device dimension, polarization extinction ratio (PER), insertion loss (IL), and operable bandwidth (BW) to design a polarization beam splitter (PBS) that is extensively used in photonic integrated circuits. The function of a PBS is to separate polarizations of light, doubling the transmission bandwidth in optical communication systems. In this work, we report a high-performance PBS comprising two-dimensional subwavelength grating metamaterials (2D SWGMs) between slot waveguides. The 2D SWGMs exhibited biaxial permittivity by tailoring the material anisotropy. The proposed PBS showed PERs of 26.8 and 26.4 dB for TE and TM modes, respectively, and ILs of ~0.25 dB for both modes, with an unprecedented small footprint of 1.35 μm × 2.75 μm working at the wavelength λ = 1550 nm. Moreover, the present structure attained satisfactory PERs of >20 dB and ILs of <0.5 dB within an ultrabroad BW of 200 nm. Full article
(This article belongs to the Special Issue Advance in Nanophotonics)
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Figure 1

Figure 1
<p>(<b>a</b>) 3D diagram with TE (<span class="html-italic">E<sub>x</sub></span>) and TM (<span class="html-italic">E<sub>y</sub></span>) mode profiles in the incident plane; (<b>b</b>) top view; (<b>c</b>) schematic of calculating the resultant effective permittivity <span class="html-italic">ε<sub>emt</sub></span> of 2D SWGMs, which is obtained by sequentially estimating the 1D SWGMs in the <span class="html-italic">z</span> (<span class="html-italic">ε<sub>p</sub></span>) and <span class="html-italic">x</span> directions (<span class="html-italic">ε<sub>emt</sub></span>) on the basis of EMT between slot waveguides; (<b>d</b>) cross-section in <span class="html-italic">xy</span> plane of the present PBS.</p>
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<p>Schematic diagram of the fabrication processes of the designed PBS.</p>
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<p>(left axis) Coupling length of TM mode <span class="html-italic">L<sub>c,</sub></span><sub>TM TM</sub> and (right axis) coupling-length ratio <span class="html-italic">L</span><sub>c,TE</sub>/<span class="html-italic">L</span><sub>c,</sub> versus <span class="html-italic">t</span><sub>s</sub> for the present PBS and the SWs.</p>
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<p>Field contours of the even modes of (<b>a</b>) TE and (<b>b</b>) TM and those of (<b>c</b>) TE and (<b>d</b>) TM of the SWs for <span class="html-italic">W</span><sub>Si</sub> = 400 nm, <span class="html-italic">t</span><sub>s</sub> = 60 nm, <span class="html-italic">h</span><sub>Si</sub> = 150 nm, <span class="html-italic">W</span><sub>Cl</sub> = 75 nm, <span class="html-italic">g</span> = 50 nm, <span class="html-italic">s</span> = 550 nm, and <span class="html-italic">λ</span> = 1550 nm. (<b>e</b>) Field amplitudes at the central lines of the slot along the <span class="html-italic">x</span> directions of (<b>a</b>,<b>c</b>); (<b>f</b>) field amplitudes at the central lines of the slot along the <span class="html-italic">x</span> directions of (<b>b</b>,<b>d</b>).</p>
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<p>Field contours of the even modes of (<b>a</b>) TE and (<b>b</b>) TM and those of (<b>c</b>) TE and (<b>d</b>) TM of the SWs for <span class="html-italic">W</span><sub>Si</sub> = 400 nm, <span class="html-italic">t</span><sub>s</sub> = 60 nm, <span class="html-italic">h</span><sub>Si</sub> = 150 nm, <span class="html-italic">W</span><sub>Cl</sub> = 75 nm, <span class="html-italic">g</span> = 50 nm, <span class="html-italic">s</span> = 550 nm, and <span class="html-italic">λ</span> = 1550 nm. (<b>e</b>) Field amplitudes at the central lines of the slot along the <span class="html-italic">x</span> directions of (<b>a</b>,<b>c</b>); (<b>f</b>) field amplitudes at the central lines of the slot along the <span class="html-italic">x</span> directions of (<b>b</b>,<b>d</b>).</p>
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<p><span class="html-italic">y</span> components of (<b>a</b>) magnetic field of the TE mode and (<b>b</b>) electric field of the TM mode, and the total power evolutions of the (<b>c</b>) TE and (<b>d</b>) TM modes of the present structure with device length <span class="html-italic">L</span><sub>D</sub> = 2.75 μm (i.e., the practical <span class="html-italic">L</span><sub>c,TM</sub> with optimal performance) for <span class="html-italic">t</span><sub>s</sub> = 60 nm, <span class="html-italic">h</span><sub>Si</sub> = 150 nm, <span class="html-italic">W</span><sub>Cl</sub> = 75 nm, <span class="html-italic">W</span><sub>Si</sub> = 400 nm, <span class="html-italic">g</span> = 50 nm, <span class="html-italic">s</span> = 550 nm, and <span class="html-italic">λ</span> = 1550 nm.</p>
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<p>(left axis) PER and (right axis) IL of both modes as functions of duty cycles (<b>a</b>) <span class="html-italic">ρ</span><sub>x</sub> and (<b>b</b>) <span class="html-italic">ρ</span><sub>z</sub> at the same parameters as those in <a href="#nanomaterials-12-01852-f004" class="html-fig">Figure 4</a>.</p>
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<p>(left axis) PER and (right axis) IL of both modes as a function of the number of Si strips, <span class="html-italic">N</span> between slot waveguides at the same parameters as those in <a href="#nanomaterials-12-01852-f005" class="html-fig">Figure 5</a>.</p>
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<p>(<b>a</b>) PER and (<b>b</b>) IL versus wavelength at the same parameters as those in <a href="#nanomaterials-12-01852-f004" class="html-fig">Figure 4</a>.</p>
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<p>(left axis) PER and (right axis) IL as functions of variations in the (<b>a</b>) Si strip width Δ<span class="html-italic">W</span><sub>Cl</sub> and (<b>b</b>) slot thickness Δ<span class="html-italic">t<sub>s</sub></span> of the present structure.</p>
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<p>(<b>a</b>) Cross-sectional diagram in <span class="html-italic">xy</span> plane and zooned-in view of a SWGM, where <span class="html-italic">W</span><sub>sw</sub> denotes the difference between the bottom and top of the SWGMs. (<b>b</b>) PER and IL versus <span class="html-italic">W</span><sub>sw</sub>.</p>
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34 pages, 4360 KiB  
Review
Optical Interconnects Finally Seeing the Light in Silicon Photonics: Past the Hype
by Hosam Mekawey, Mohamed Elsayed, Yehea Ismail and Mohamed A. Swillam
Nanomaterials 2022, 12(3), 485; https://doi.org/10.3390/nano12030485 - 29 Jan 2022
Cited by 29 | Viewed by 7572
Abstract
Electrical interconnects are becoming a bottleneck in the way towards meeting future performance requirements of integrated circuits. Moore’s law, which observes the doubling of the number of transistors in integrated circuits every couple of years, can no longer be maintained due to reaching [...] Read more.
Electrical interconnects are becoming a bottleneck in the way towards meeting future performance requirements of integrated circuits. Moore’s law, which observes the doubling of the number of transistors in integrated circuits every couple of years, can no longer be maintained due to reaching a physical barrier for scaling down the transistor’s size lower than 5 nm. Heading towards multi-core and many-core chips, to mitigate such a barrier and maintain Moore’s law in the future, is the solution being pursued today. However, such distributed nature requires a large interconnect network that is found to consume more than 80% of the microprocessor power. Optical interconnects represent one of the viable future alternatives that can resolve many of the challenges faced by electrical interconnects. However, reaching a maturity level in optical interconnects that would allow for the transition from electrical to optical interconnects for intra-chip and inter-chip communication is still facing several challenges. A review study is required to compare the recent developments in the optical interconnects with the performance requirements needed to reach the required maturity level for the transition to happen. This review paper dissects the optical interconnect system into its components and explains the foundational concepts behind the various passive and active components along with the performance metrics. The performance of different types of on-chip lasers, grating and edge couplers, modulators, and photodetectors are compared. The potential of a slot waveguide is investigated as a new foundation since it allows for guiding and confining light into low index regions of a few tens of nanometers in cross-section. Additionally, it can be tuned to optimize transmissions over 90° bends. Hence, high-density opto-electronic integrated circuits with optical interconnects reaching the dimensions of their electrical counterparts are becoming a possibility. The latest complete optical interconnect systems realized so far are reviewed as well. Full article
(This article belongs to the Special Issue Plasmonic Nanostructures and Their Applications)
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<p>Capacitance between neighboring wires (<span class="html-italic"><sub>Cc</sub></span>) and adjacent metal layers (<span class="html-italic">C<sub>g</sub></span>) [<a href="#B32-nanomaterials-12-00485" class="html-bibr">32</a>], © 2022 IEEE. Reprinted with permission, from M. Ghoneima, Y. Ismail, M. M. Khellah, J. Tschanz, and V. De, “Serial-Link Bus: A Low-Power On-Chip Bus Architecture,” IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 56, pp. 2020–2032, 2009.</p>
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<p>Data propagation through an optical interconnect system. Continuous-wave light is generated from the source. Data is transferred from the electrical domain to the optical domain using the modulator. The data-carrying capacity of an optical fiber usually far exceeds that of copper, thus it is possible to combine data onto one optical fiber using multiplexing methods. On the receiving end, the light passes through a demultiplexer, then a photodetector is used where the data is recovered to the electrical domain.</p>
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<p>3D schematic of the optical interconnect between core 1 and core 2. Light is introduced to the system by either coupling off-chip lasers using grating couplers or by using an on-chip source. The different colors represent the different wavelengths, where each wavelength is considered as a data channel. The electrical data from core 1 is transmitted through metal layers to the electro-optical modulator, which converts the data from the electrical domain to the optical domain. Wavelength division multiplexing is used to increase the capacity of the system. A multiplexer combines the data from different wavelengths into one waveguide. For core-to-core communication on the same chip, simply an optical waveguide will suffice. For long-distance communication, the data can be transferred to an optical fiber using coupling methods, such as surface grating couplers or edge couplers. A demultiplexer splits the data back into their channels, and a photodetector converts the data back into the electrical domain. The schematic shows the various alternatives for the source (off-chip/on-chip), waveguide (strip/slot [<a href="#B63-nanomaterials-12-00485" class="html-bibr">63</a>]), modulator (carrier accumulation/carrier injection/carrier depletion), and photodetector (PIN/avalanche).</p>
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<p>(<b>a</b>) Edge coupler utilizing a spot size converter [<a href="#B58-nanomaterials-12-00485" class="html-bibr">58</a>]. Reproduced under CC BY. (<b>b</b>) Cross-section schematic of the grating coupler [<a href="#B54-nanomaterials-12-00485" class="html-bibr">54</a>], © Cambridge University Press 2015. Adapted by permission from Cambridge University Press: L. Chrostowski and M. Hochberg, silicon photonics design: from devices to systems. (<b>c</b>) Cross-section schematic of a grating coupler [<a href="#B58-nanomaterials-12-00485" class="html-bibr">58</a>]. Reproduced under CC BY.</p>
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<p>Schematic showing the concept of an integrated 1 Tbps hybrid silicon photonic transmitter [<a href="#B93-nanomaterials-12-00485" class="html-bibr">93</a>]. The 25 lasers should have a very narrow linewidth to allow using a narrowband photodetector, which can be simpler and more efficient than a wideband photodetector. Copyright © 2022 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim. Reprinted by permission from John Wiley and Sons: B. R. Koch, A. W. Fang, E. Lively, R. Jones, O. Cohen, D. J. Blumenthal, and J. E. Bowers, “Mode locked and distributed feedback silicon evanescent lasers,” Laser and Photonics Reviews, vol. 3, pp. 355–369, 2009.</p>
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<p>The waveguide structure with dimensions <span class="html-italic">h</span> = 250 nm and <span class="html-italic">w</span> = 450 nm: (<b>a</b>) The slot is centered in the waveguide and (<b>b</b>) the waveguide slot is offset by <span class="html-italic">x</span>. The positive <span class="html-italic">x</span> direction is towards the outside of the bend. (<b>c</b>) Slot wave-guide losses due to bending for different slot positions and bending radii. Reprinted by permission from the Optica Publishing Group [<a href="#B63-nanomaterials-12-00485" class="html-bibr">63</a>].</p>
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<p>Speed versus energy consumption chart categorizes different types of electro-optical modulators [<a href="#B148-nanomaterials-12-00485" class="html-bibr">148</a>], © 2022 by WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim. Reprinted by permission from John Wiley and Sons: K. Liu, C. R. Ye, S. Khan, and V. J. Sorger, “Review and perspective on ultrafast wavelength-size electro-optic modulators,” Laser and Photonics Reviews, vol. 9, pp. 172–194, 2015.</p>
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<p>Cross sections of the typical plasma dispersion-based modulators configurations [<a href="#B118-nanomaterials-12-00485" class="html-bibr">118</a>]. (<b>a</b>) Carrier accumulation in which a thin insulating SiO<sub>2</sub> layer splits the waveguide and causes carriers to accumulate on both sides of the layer. (<b>b</b>) Carrier injection in which the waveguide is formed by an intrinsic layer separating a highly doped n and p regions. (<b>c</b>) Carrier depletion in which the lightly doped n and p regions are adjacent and form a PN junction in the waveguide itself. Reprinted by permission from Springer Nature: Nature Photonics “Silicon optical modulators,” G. T. Reed, G. Mashanovich, F. Y. Gardes, D. J. Thomson, © 2022.</p>
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<p>(<b>a</b>) Schematic layout of a carrier injection-based ring resonator modulator. (<b>b</b>) SEM and optical microscope top view images of the ring resonator. (<b>c</b>) The ring resonator’s transmission spectra for various bias voltage on the p-i-n structure. The inset in (<b>c</b>) shows the transfer function of the modulator [<a href="#B147-nanomaterials-12-00485" class="html-bibr">147</a>]. Reprinted by permission from Springer Nature: Nature “Micrometre-scale silicon electro-optic modulator,” Q. Xu, B. Schmidt, S. Pradhan, M. Lipson, © 2022.</p>
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<p>(<b>a</b>) Schematic layout of a carrier accumulation-based modulator. (<b>b</b>) Realized phase shift versus the drive voltage for different phase shifter length values [<a href="#B150-nanomaterials-12-00485" class="html-bibr">150</a>]. Reprinted with permission from Springer Nature: Nature “A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor,” A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, M. Paniccia, © 2022.</p>
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<p>Photodetector circuit model [<a href="#B54-nanomaterials-12-00485" class="html-bibr">54</a>], © Cambridge University Press 2015. Reprinted by permission from Cambridge University Press: L. Chrostowski and M. Hochberg, Silicon photonics design: from devices to systems.</p>
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<p>Different types of photodetectors. (<b>a</b>) Lateral PIN photodetector [<a href="#B194-nanomaterials-12-00485" class="html-bibr">194</a>]. Reproduced with permission from Optica Publishing Group. (<b>b</b>) Lateral metal/semiconductor/metal avalanche photodetector [<a href="#B197-nanomaterials-12-00485" class="html-bibr">197</a>]. Reprinted by permission from Springer Nature: Nature “Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects,” S. Assefa, F. Xia, Y. A. Vlasov, © 2022.</p>
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<p>Summary of the various recent complete interconnect systems. (<b>a</b>) Three cases based on 180 nm CMOS technology using a bulk silicon wafer. All-optical devices based on polysilicon. Each channel has a maximum of 5 Gbps; the reported speed is with WDM [<a href="#B49-nanomaterials-12-00485" class="html-bibr">49</a>]. (<b>b</b>) Two-chip approach: optical chip built using III–V materials, integrated with an electronic chip built using 32 nm SOI CMOS technology. A reported speed of 30 Gbps refers to a single-channel [<a href="#B219-nanomaterials-12-00485" class="html-bibr">219</a>]. (<b>c</b>) A zero-change approach based on a 45 nm SOI CMOS process that includes SiGe, demonstrated only one wavelength operation at 5 Gbps; the reported speed of 55 Gbps is the potential bandwidth if WDM is implemented [<a href="#B70-nanomaterials-12-00485" class="html-bibr">70</a>]. (<b>d</b>) Eight 10 Gbps WDM channels, for a total speed of 80 Gbps. A 130 nm SOI was used for the optical devices, and a 40 nm CMOS was used for the electronic devices. The reported power consumption excludes ring tuning and laser power [<a href="#B217-nanomaterials-12-00485" class="html-bibr">217</a>]. (<b>e</b>) A similar approach to (<b>d</b>), with a more efficient thermal tuning of modulators [<a href="#B218-nanomaterials-12-00485" class="html-bibr">218</a>]. (<b>f</b>) A zero-change approach based on a 65 nm CMOS technology using a bulk silicon wafer, demonstrated only one wavelength operation at 10 Gbps and 600 fJ/bit power consumption. Reported speed and power consumption are achievable if WDM is implemented [<a href="#B220-nanomaterials-12-00485" class="html-bibr">220</a>].</p>
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<p>Silicon photonics optical interconnect co-integrated with electronics to provide communication between the processor and memory [<a href="#B70-nanomaterials-12-00485" class="html-bibr">70</a>]. Reprinted by permission from Springer Nature: Nature “ Single-chip microprocessor that communicates directly using light,” C. Sun, M. T. Wade, Y. Lee, J. S. Orcutt, L. Alloatti, M. S. Georgas, A. S. Waterman, J. M. Shainline, R. R. Avizienis, S. Lin, B. R. Moss, R. Kumar, F. Pavanello, A. H. Atabaki, H. M. Cook, A. J. Ou, J. C. Leu, Y.-H. Chen, K. Asanović, R. J. Ram, M. A. Popović, and V. M. Stojanović, © 2022.</p>
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14 pages, 4087 KiB  
Article
Efficient Design for Integrated Photonic Waveguides with Agile Dispersion
by Zhaonian Wang, Jiangbing Du, Weihong Shen, Jiacheng Liu and Zuyuan He
Sensors 2021, 21(19), 6651; https://doi.org/10.3390/s21196651 - 7 Oct 2021
Cited by 6 | Viewed by 2494
Abstract
Chromatic dispersion engineering of photonic waveguide is of great importance for Photonic Integrated Circuit in broad applications, including on-chip CD compensation, supercontinuum generation, Kerr-comb generation, micro resonator and mode-locked laser. Linear propagation behavior and nonlinear effects of the light wave can be manipulated [...] Read more.
Chromatic dispersion engineering of photonic waveguide is of great importance for Photonic Integrated Circuit in broad applications, including on-chip CD compensation, supercontinuum generation, Kerr-comb generation, micro resonator and mode-locked laser. Linear propagation behavior and nonlinear effects of the light wave can be manipulated by engineering CD, in order to manipulate the temporal shape and frequency spectrum. Therefore, agile shapes of dispersion profiles, including typically wideband flat dispersion, are highly desired among various applications. In this study, we demonstrate a novel method for agile dispersion engineering of integrated photonic waveguide. Based on a horizontal double-slot structure, we obtained agile dispersion shapes, including broadband low dispersion, constant dispersion and slope-maintained linear dispersion. The proposed inverse design method is objectively-motivated and automation-supported. Dispersion in the range of 0–1.5 ps/(nm·km) for 861-nm bandwidth has been achieved, which shows superior performance for broadband low dispersion. Numerical simulation of the Kerr frequency comb was carried out utilizing the obtained dispersion shapes and a comb spectrum for 1068-nm bandwidth with a 20-dB power variation was generated. Significant potential for integrated photonic design automation can be expected. Full article
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<p>(<b>a</b>) Structures of horizontal double slot waveguide; (<b>b</b>) comparison of light field between single- and double-slot; (<b>c</b>): Comparison of the ratio for normalized power in slot area.</p>
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<p>(<b>a</b>) Structures of horizontal double slot waveguide; (<b>b</b>) comparison of light field between single- and double-slot; (<b>c</b>): Comparison of the ratio for normalized power in slot area.</p>
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<p>(<b>a</b>) Flow chart of the whole proposed inverse design method; (<b>b</b>) schematic principle of inverse design via Neural Network.</p>
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<p>Actual and predicted data for As2S3 waveguide.</p>
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<p>Inversely designed dispersion curves of As2S3 waveguides. (<b>a</b>) Broadband low dispersion for different target wavebands; (<b>b</b>) broadband maintained constant dispersion; (<b>c</b>) slope maintained linear dispersion.</p>
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<p>Inversely designed dispersion curves of As2S3 waveguides. (<b>a</b>) Broadband low dispersion for different target wavebands; (<b>b</b>) broadband maintained constant dispersion; (<b>c</b>) slope maintained linear dispersion.</p>
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<p>Actual and predicted data for Si3N4 waveguide.</p>
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<p>Inversely designed dispersion curves of Si3N4 waveguides. (<b>a</b>) Broadband low dispersion for different target wavebands; (<b>b</b>) broadband maintained constant dispersion; (<b>c</b>) slope maintained linear dispersion.</p>
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<p>(<b>a</b>): Waveguide with sidewall angles; (<b>b</b>) fundamental modes for waveguides with sidewall angle of 0 and 5 degrees; (<b>c</b>) dispersion curves with different sidewall angles for Structure A1; (<b>d</b>) dispersion curves with different sidewall angles for Structure B1.</p>
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<p>(<b>a</b>) Spectrum of Kerr frequency comb generated from micro-ring resonator with Structure B1; (<b>b</b>) spectrum of Kerr frequency comb generated from micro-ring resonator with Structure B2.</p>
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14 pages, 4897 KiB  
Article
SIW Cavity-Backed Antenna Array Based on Double Slots for mmWave Communications
by Bilal Hammu-Mohamed, Ángel Palomares-Caballero, Cleofás Segura-Gómez, Francisco G. Ruiz and Pablo Padilla
Appl. Sci. 2021, 11(11), 4824; https://doi.org/10.3390/app11114824 - 24 May 2021
Cited by 13 | Viewed by 5086
Abstract
This paper presents a cavity-backed antenna array in substrate integrated waveguide (SIW) technology in the millimeter-wave frequency band. The proposed antenna design uses double slots as radiating elements instead of conventional single slots. The double slots allow better control in the design of [...] Read more.
This paper presents a cavity-backed antenna array in substrate integrated waveguide (SIW) technology in the millimeter-wave frequency band. The proposed antenna design uses double slots as radiating elements instead of conventional single slots. The double slots allow better control in the design of the operating frequency bands of the cavity-backed antenna. The performance of the cavity-backed antennas with single and double slots is compared to assess the enhanced behavior of the double slots. As a proof of concept, a 2 × 2 array of cavity-backed antennas is designed, manufactured, and measured. Each cavity-backed antenna contains 2 × 2 double slots; thus, a 4 × 4 antenna array is considered. The experimental operating frequency band of the proposed antenna array ranges from 35.4 to 37 GHz. There is a good agreement between the simulated and measured results. The measured gain is around 17 dBi in the whole operating frequency band with a 75% total antenna efficiency. Full article
(This article belongs to the Section Electrical, Electronics and Communications Engineering)
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<p>SIW antenna array design. The feeding layer is fed by a coaxial port and the radiating layer contains the cavity-backed antennas based on double slots.</p>
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<p>Planar view of the corporate feeding network and simulated results: (<b>a</b>) planar view, (<b>b</b>) electric field distribution at 36 GHz, (<b>c</b>) magnitude of the simulated reflection and transmission coefficients (|S<sub>11</sub>| and |S<sub>X1</sub>|), and (<b>d</b>) simulated phase shift among output ports (<span class="html-italic">∠</span> S<sub>X1</sub>). The dimensions are: D<sub>1</sub> = 0.5 mm, D<sub>2</sub> = 1.67 mm, L<sub>f1</sub> = 13.55 mm, L<sub>f2</sub> = 4.5 mm, and L<sub>f3</sub> = 7.2 mm.</p>
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<p>Planar views of the cavity-backed antenna: (<b>a</b>) introducing a single slot, and (<b>b</b>) introducing a double slot. The coupling via is marked as yellow filled circle. (<b>c</b>) Electric and magnetic fields of the fundamental mode of the cavity. The dimensions are: L<sub>x</sub> = 8.8 mm, L<sub>y</sub> = 7.56 mm, w<sub>p</sub> = 2.48 mm, h<sub>c</sub> = 1.52 mm, w<sub>c</sub> = 3.27 mm, d<sub>p</sub> = 1.09 mm, d<sub>v1</sub> = 0.4 mm, p<sub>v</sub> = 0.7 mm, d<sub>v2</sub> = 0.5 mm, s<sub>v1</sub> = 0.723 mm, s<sub>v2</sub> = 0.6 mm, s<sub>x1</sub> = 0.69 mm, s<sub>y1</sub> = 0.69 mm, w<sub>s1</sub> = 0.3 mm, l<sub>s1</sub> = 3 mm, s<sub>x2</sub> = 0.63 mm, s<sub>y2</sub> = 1.33 mm, w<sub>s2</sub> = 0.28 mm, and l<sub>s2</sub> = 2.8 mm.</p>
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<p>Parametric study of the single slot: (<b>a</b>) sweep of parameter s<sub>y1</sub>, (<b>b</b>) sweep of parameter l<sub>s1</sub>, and and (<b>c</b>) sweep of parameter w<sub>s1</sub>.</p>
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<p>Parametric study of the single slot: (<b>a</b>) sweep of parameter s<sub>y1</sub>, (<b>b</b>) sweep of parameter l<sub>s1</sub>, and and (<b>c</b>) sweep of parameter w<sub>s1</sub>.</p>
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<p>Parametric study of the second slot of the double-slot: (<b>a</b>) sweep of parameter s<sub>y2</sub>, (<b>b</b>) sweep of parameter l<sub>s2</sub>, and (<b>c</b>) sweep of parameter w<sub>s2</sub>.</p>
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<p>Prototype: (<b>a</b>) layer details; (<b>b</b>) complete assembly and connector details.</p>
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<p>(<b>a</b>) Measurement setup details. (<b>b</b>) Simulated and measured |S<sub>11</sub>|.</p>
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<p>Simulated and measured H-plane radiation patterns of the proposed SIW antenna at: (<b>a</b>) 35.4, (<b>b</b>) 36.2, and (<b>c</b>) 37 GHz. Simulated and measured E-plane radiation patterns of the proposed SIW antenna at: (<b>d</b>) 35.4, (<b>e</b>) 36.2, and (<b>f</b>) 37 GHz.</p>
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<p>Three-dimensional (spherical) far-field radiation pattern of the proposed SIW antenna at: (<b>a</b>) 35.4, (<b>b</b>) 36.2, and (<b>c</b>) 37 GHz. In the plot, the angular turn is related to roll and the radial variation refers to the azimuth (steps of 10° between dashed rings).</p>
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<p>Simulated directivity, simulated gain, and measured gain values.</p>
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13 pages, 4319 KiB  
Article
Subwavelength Grating Double Slot Waveguide Racetrack Ring Resonator for Refractive Index Sensing Application
by Nikolay Lvovich Kazanskiy, Svetlana Nikolaevna Khonina and Muhammad Ali Butt
Sensors 2020, 20(12), 3416; https://doi.org/10.3390/s20123416 - 17 Jun 2020
Cited by 55 | Viewed by 5909
Abstract
In this paper, a racetrack ring resonator design based on a subwavelength grating double slot waveguide is presented. The proposed waveguide scheme is capable of confining the transverse electric field in the slots and the gaps between the grating segments. This configuration facilitates [...] Read more.
In this paper, a racetrack ring resonator design based on a subwavelength grating double slot waveguide is presented. The proposed waveguide scheme is capable of confining the transverse electric field in the slots and the gaps between the grating segments. This configuration facilitates a large light–matter interaction which elevates the sensitivity of the device approximately 2.5 times higher than the one that can be obtained via a standard slot waveguide resonator. The best sensitivity of the design is obtained at 1000 nm/RIU by utilizing a subwavelength grating double slot waveguide of period 300 nm. The numerical study is conducted via 2D and 3D finite element methods. We believe that the proposed sensor design can play an important role in the realization of highly sensitive lab-on-chip sensors. Full article
(This article belongs to the Special Issue Sensors Based on Diffraction Structures)
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<p>Schematic of (<b>a</b>) Single slot waveguide, (<b>b</b>) Double slot waveguide (<b>c</b>) Subwavelength grating single slot waveguide, (<b>d</b>) Subwavelength grating double slot waveguide.</p>
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<p>The transmission spectrum of GDSWG which is divided into two regions—photonic bandgap and subwavelength region. Inset of the figure shows the E<sub>z</sub> plot of a WG in both the regions.</p>
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<p>(<b>a</b>) Real part of the effective refractive index of SSWG and DSWG, (<b>b</b>) Mode sensitivity analysis, (<b>c</b>) E-field distribution in SSWG and DSWG at W<sub>rail</sub> = 200 and 400 nm.</p>
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<p>E-field distribution in the cross-sectional view, top view and line cut profile of electric field intensity of (<b>a</b>) SSWG, (<b>b</b>) DSWG, (<b>c</b>) GSSWG, (<b>d</b>)GDSWG.</p>
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<p>Variation of (<b>a</b>) Γ<sub>slot</sub> + Γ<sub>gap</sub>, (<b>b</b>) <span class="html-italic">Γ<sub>c</sub></span>, (<b>c</b>) Transmission (dB), on the WG width (<span class="html-italic">W<sub>rail</sub></span>).</p>
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<p>Schematic of race track resonator based on (<b>a</b>) SSWG, <b>(b)</b> DSWG, (<b>c</b>) GSSWG, (<b>d</b>) GDSWG.</p>
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<p>Determination of resonance wavelength of (<b>a</b>) SSWG and DSWG, (<b>b</b>) GSSWG and GDSWG. Extinction ratio (<span class="html-italic">ER</span>) of (<b>c</b>) SSWG and DSWG, (<b>d</b>) GSSWG and GDSWG.</p>
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<p>E-field distribution in (<b>a</b>) SSWG resonator, (<b>b</b>) DSWG resonator, (<b>c</b>) GSSWG resonator, (<b>d</b>)GDSWG resonator. The inset shows the zoomed section of the ring resonator at <span class="html-italic">λ<sub>res</sub></span>.</p>
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<p>(<b>a</b>) Sensitivity, (<b>b</b>) <span class="html-italic">FOM</span>, (<b>c</b>) <span class="html-italic">Q-factor</span> of all four designs.</p>
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8 pages, 1993 KiB  
Article
Improving Upconversion Efficiency Based on Cross-Patterned Upconversion Material Slot Waveguides on a Silicon Layer
by Youngsoo Kim, Kihwan Moon, Young Jin Lee, Seokhyeon Hong and Soon-Hong Kwon
Nanomaterials 2019, 9(4), 520; https://doi.org/10.3390/nano9040520 - 3 Apr 2019
Cited by 1 | Viewed by 3078
Abstract
Upconversion (UC) materials can be used to harvest near-infrared (NIR) light and convert it into visible light. Although this improves optical device operating spectral range and efficiency, e.g., solar cells, typical UC material conversion efficiency is too low for practical devices. We propose [...] Read more.
Upconversion (UC) materials can be used to harvest near-infrared (NIR) light and convert it into visible light. Although this improves optical device operating spectral range and efficiency, e.g., solar cells, typical UC material conversion efficiency is too low for practical devices. We propose a cross-patterned slot waveguide constructed from UC material embedded in a high index semiconductor layer to improve UC. Since the slot waveguide mode is induced in the low index UC slot, NIR absorption (~970 nm) increased 25-fold compared with film structures. Furthermore, the spontaneous emission enhancement rate at 660 nm increased 9.6-fold compared to the reference film due to resonance excited in the UC slot (Purcell effect). Thus, the proposed UC slot array structure improved UC efficiency 240-fold considering absorption and emission enhancements. This double resonance UC improvement can be applied to practical optical devices. Full article
(This article belongs to the Special Issue Nanophotonics and Its Applications)
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Figure 1

Figure 1
<p>(<b>a</b>) Proposed cross-patterned upconversion (UC) material slot waveguide structure on silicon thin layer, where <span class="html-italic">w</span> and <span class="html-italic">h</span> are the width and height of each silicon layer block, respectively, and <span class="html-italic">t</span> is the slot thickness; simulated Er<sup>3+</sup>/Yb<sup>3+</sup> doped NaYF<sub>4</sub> UC material slot absorbance spectra for different (<b>b</b>) widths and (<b>c</b>) heights.</p>
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<p>(<b>a</b>) Simulated absorption spectra for the proposed upconversion (UC) slot structure and reference film; the UC device exhibits emission and absorption resonances at 660 and 970 nm, respectively; (<b>b</b>) and (<b>c</b>) electric field intensity profiles for 970 nm incident light; maximum field intensity is almost 30 times that of the incident light.</p>
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<p>(<b>a</b>) Absorption spectra for different slot widths (<span class="html-italic">t</span>). Here, width of 380 nm and height of 200 nm are used. (<b>b</b>) Absorption spectra for different refractive indexes (n) of the block material.</p>
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<p>Spontaneous emission (SE) enhancement as functions of <span class="html-italic">Ex</span> dipole source location; (<b>b</b>) is SE enhancement in the XZ plane at <span class="html-italic">y</span> = 200 nm corresponding to (<b>a</b>); (<b>c</b>) is SE enhancement along the <span class="html-italic">z</span>-direction for (b).</p>
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<p>(<b>a</b>) Electric field intensity in the 660 nm resonance mode XZ plane (<span class="html-italic">y</span> = 200 nm). (<b>b</b>) Electric field intensity and spontaneous emission (SE) enhancement from <a href="#nanomaterials-09-00520-f003" class="html-fig">Figure 3</a>c along the <span class="html-italic">z</span>-direction at the UC slot center (<span class="html-italic">y</span> = 200 nm).</p>
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968 KiB  
Article
Double-Slot Hybrid Plasmonic Ring Resonator Used for Optical Sensors and Modulators
by Xu Sun, Daoxin Dai, Lars Thylén and Lech Wosinski
Photonics 2015, 2(4), 1116-1130; https://doi.org/10.3390/photonics2041116 - 25 Nov 2015
Cited by 57 | Viewed by 9420
Abstract
An ultra-high sensitivity double-slot hybrid plasmonic (DSHP) ring resonator, used for optical sensors and modulators, is developed. Due to high index contrast, as well as plasmonic enhancement, a considerable part of the optical energy is concentrated in the narrow slots between Si and [...] Read more.
An ultra-high sensitivity double-slot hybrid plasmonic (DSHP) ring resonator, used for optical sensors and modulators, is developed. Due to high index contrast, as well as plasmonic enhancement, a considerable part of the optical energy is concentrated in the narrow slots between Si and plasmonic materials (silver is used in this paper), which leads to high sensitivity to the infiltrating materials. By partial opening of the outer plasmonic circular sheet of the DSHP ring, a conventional side-coupled silicon on insulator (SOI) bus waveguide can be used. Experimental results demonstrate ultra-high sensitivity (687.5 nm/RIU) of the developed DSHP ring resonator, which is about five-times higher than for the conventional Si ring with the same geometry. Further discussions show that a very low detection limit (5.37 × 10−6 RIU) can be achieved after loaded Q factor modifications. In addition, the plasmonic metal structures offer also the way to process optical and electronic signals along the same hybrid plasmonic circuits with small capacitance (~0.275 fF) and large electric field, which leads to possible applications in compact high-efficiency electro-optic modulators, where no extra electrodes for electronic signals are required. Full article
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Graphical abstract

Graphical abstract
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<p>(<b>a</b>) Schematic of a double-slot hybrid plasmonic ring resonator; (<b>b</b>) x-z plane cross-section view; (<b>c</b>) power distribution of the x-z plane cross-section simulated by the axisymmetric finite element method. IPA, 2-isopropanol.</p>
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<p>(<b>a</b>) <span class="html-italic">Q</span> factor <span class="html-italic">versus</span> the radius of the double-slot hybrid plasmonic (DSHP) ring resonator with various widths of the slots (150 nm, 250 nm and 350 nm); the other geometrical parameters are: <span class="html-italic">w<sub>Si</sub></span> = 350 nm and <span class="html-italic">h<sub>WG</sub></span> = 250 nm; (<b>b</b>,<b>c</b>,<b>d</b>) the <span class="html-italic">Q<sub>abs</sub></span> factor, effective refractive index and sensitivity changes with the <span class="html-italic">q</span>-parameter for waveguides with a total width <span class="html-italic">w</span> of 500 nm, 600 nm, 700 nm, 800 nm, 900 nm and 1000 nm.</p>
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<p>Schematic of the Si bus waveguide side-coupled double-slot hybrid plasmonic ring sensor. The sub-figures are the detailed structures of the coupling area and the DSHP ring. The measurement setup is also illustrated. OSA, optical spectrum analyzer.</p>
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<p>Scanning electron microscope picture of the fabricated double-slot hybrid plasmonic ring sensor.</p>
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<p>Characterization results of the double-slot hybrid plasmonic ring sensor (black curves) and a silicon ring resonator with the same radius (red curves) infiltrated with 100% and 80% 2-isopropanol. The reference level is the transmission response of the straight waveguide with input/output grating couplers.</p>
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<p>(<b>a</b>) Schematic of the modified double-slot hybrid plasmonic ring sensor. (<b>b</b>) Finite difference time domain (FDTD) simulation results of the modified DSHP ring sensor with different <span class="html-italic">w<sub>Si</sub></span>(<span class="html-italic">modified</span>). The sub-figure shows the loaded <span class="html-italic">Q</span> factor as a function of <span class="html-italic">w<sub>Si</sub></span>(<span class="html-italic">modified</span>).</p>
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