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7 pages, 3998 KiB  
Article
Development and Characterization of an Advanced Voltage-Controllable Capacitor Based on AlInGaN/GaN-Si (111) Epitaxy
by He Guan and Guiyu Shen
Coatings 2024, 14(10), 1254; https://doi.org/10.3390/coatings14101254 - 1 Oct 2024
Viewed by 274
Abstract
The AlInGaN/GaN heterojunction epitaxy material with high cutoff frequency and saturated power density has become a very popular candidate for millimeter wave applications in next-generation mobile communication. In this study, an advanced voltage-controllable capacitor based on the AlInGaN/GaN-Si (111) epitaxy was proposed by [...] Read more.
The AlInGaN/GaN heterojunction epitaxy material with high cutoff frequency and saturated power density has become a very popular candidate for millimeter wave applications in next-generation mobile communication. In this study, an advanced voltage-controllable capacitor based on the AlInGaN/GaN-Si (111) epitaxy was proposed by employing a bi-directional series MIS capacitor structure. The capacitor was fabricated by using a pad area of 40 μm × 40 μm, with a 1 μm distance between the positive and negative electrodes. The test results show that the capacitance is turned on with a saturation capacitance density and a maximum leakage current density of 0.30 fF/μm2 of 0.37 pA/μm2, respectively, for the control voltage from −6.5 V to 6 V. In particular, in the proposed design method, the saturation capacitance required for the practical application can be obtained by simply adjusting the capacitance area. The capacitor showcases characteristics of rapid turn-on and turn-off responses coupled with low loss, underscoring its promising prospects for deployment in RF switching applications. Full article
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<p>The InAlGaN/GaN-Si epitaxy schematic and test result; (<b>a</b>) is the schematic of the AlInGaN/GaN epitaxy structure, (<b>b</b>) is the TEM analysis of AlInGaN/GaN heterojunction, (<b>c</b>) is the TEM analysis of AlN/AlGaN buffer layer, and (<b>d</b>) is the EDS Scan result of Al.</p>
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<p>The InAlGaN/GaN-Si epitaxy schematic and test result; (<b>a</b>) is the schematic of the AlInGaN/GaN epitaxy structure, (<b>b</b>) is the TEM analysis of AlInGaN/GaN heterojunction, (<b>c</b>) is the TEM analysis of AlN/AlGaN buffer layer, and (<b>d</b>) is the EDS Scan result of Al.</p>
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<p>The schematic of the device structure and the equivalent circuit of the device.</p>
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<p>The optical microscopy.</p>
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<p>The C-V test curves of the capacitor.</p>
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<p>The I-V test curves of the capacitor.</p>
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26 pages, 5160 KiB  
Article
Operating Characteristics of a Wave-Driven Plasma Thruster for Cutting-Edge Low Earth Orbit Constellations
by Anna-Maria Theodora Andreescu, Daniel Eugeniu Crunteanu, Maximilian Vlad Teodorescu, Simona Nicoleta Danescu, Adrian Stoicescu, Alexandru Cancescu and Alexandru Paraschiv
Inventions 2024, 9(5), 107; https://doi.org/10.3390/inventions9050107 - 29 Sep 2024
Viewed by 288
Abstract
This paper outlines the development phases of a wave-driven Helicon Plasma Thruster for cutting-edge Low Earth Orbit (LEO) constellations. The two-stage ambipolar electric propulsion (EP) system combines the efficient ionization of an ultra-compact helicon reactor with plasma acceleration based on an ambipolar electric [...] Read more.
This paper outlines the development phases of a wave-driven Helicon Plasma Thruster for cutting-edge Low Earth Orbit (LEO) constellations. The two-stage ambipolar electric propulsion (EP) system combines the efficient ionization of an ultra-compact helicon reactor with plasma acceleration based on an ambipolar electric field provided by a magnetic nozzle. This paper reveals maturation challenges associated with an emerging EP system in the hundreds-watt class, followed by outlook strategies. A 3 cm diameter helicon reactor was operated using argon gas under a time-modulated RF power envelope ranging from 250 W to 500 W with a fixed magnetic field strength of 400 G. Magnetically enhanced inductively coupled plasma reactor characteristics based on half-wavelength right helical and Nagoya Type III antennas under capacitive (E-mode), inductive (W-mode), and wave coupling (W-mode) were systematically investigated based on Optical Emission Spectroscopy. The operation characteristics of a wave-heated reactor based on helicon configuration were investigated as a function of different operating parameters. This work demonstrates the ability of two-stage HPT using a compact helicon reactor and a cusped magnetic field to outperform today’s LEO spacecraft propulsion. Full article
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<p>Representation of the mode conversion model from the helicon wave. (<b>a</b>) Representation of characteristic points on the density profile and the radial variation of transverse wavenumber. TG and H denote the Trivelpiece-Gould branches of the dispersion relation. Adapted from [<a href="#B42-inventions-09-00107" class="html-bibr">42</a>]. (<b>b</b>) Representation of the electric field patterns of both waves. Adapted from [<a href="#B35-inventions-09-00107" class="html-bibr">35</a>].</p>
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<p>Cross-section schematic of the HPT with a central focus on the magnetic confinement system and MN acceleration scheme.</p>
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<p>(<b>a</b>) CAD rendering of the HPT breadboard model with right half-wavelength antenna. (<b>b</b>) CAD rendering of the HPT breadboard model with NTIII antenna.</p>
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<p>Three-dimensional representation of <math display="inline"><semantics> <mrow> <mi>m</mi> <mo>=</mo> <mo>+</mo> <mn>1</mn> </mrow> </semantics></math> mode RF antennas used for efficient plasma production in wave-heated EP technology. (<b>a</b>) HWRH antenna. (<b>b</b>) Nagoya Type III.</p>
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<p>Photographs of the 78 mm long cooper antennas used in experiments. (<b>a</b>) Half-wavelength right helical antenna dedicated for HPT-EP01. (<b>b</b>) NTIII antenna dedicated for HPT-EP02.</p>
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<p>(<b>a</b>) CAD rendering of the HPT breadboard model (HPT-BM) mounted on the vacuum chamber support. (<b>b</b>) Representative picture of the HPT-BM showcasing the integration with its mounting hardware.</p>
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<p>Experimental testing setup of HPT-EP01 and HPT-EP02.</p>
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<p>Photographs of HPT-EP01 under PWM operation for a maximum RF energy of 250 W. (<b>a</b>) HPT-EP01 initial active-glow period. (<b>b</b>) HPT-EP01 steady-state active glow period. (<b>c</b>) HPT-EP01 initial after-glow period. (<b>d</b>) HPT-EP01 late after-glow period.</p>
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<p>Optical emission spectra for the HPT-EP01 operating with 250 W RF power and 8 W reflected power, with 1 s on and 0.4 s off.</p>
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<p>Representation of the reflected power and forwarded power within the helicon reactor during time-modulated RF power envelope.</p>
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<p>Photographs of HPT-EP02 under PWM operation for a maximum RF energy of 250 W. (<b>a</b>) HPT-EP02 initial active-glow period. (<b>b</b>) HPT-EP02 steady-state active glow period. (<b>c</b>) HPT-EP02 initial after-glow period. (<b>d</b>) HPT-EP02 late after-glow period.</p>
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<p>Photographs of HPT-EP02 under PWM operation for a maximum RF energy of 250 W. (<b>a</b>) HPT-EP02 initial active-glow period. (<b>b</b>) HPT-EP02 steady-state active glow period. (<b>c</b>) HPT-EP02 initial after-glow period. (<b>d</b>) HPT-EP02 late after-glow period.</p>
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<p>Optical emission spectra for the HPT-EP02 operating with 250 W RF power and 6 W reflected power, with 1 s on and 0.4 s off.</p>
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<p>Photographs of HPT-EP02 under PWM operation for a maximum RF energy of 400 W. (<b>a</b>) HPT-EP02 initial active-glow period. (<b>b</b>) HPT-EP02 steady-state active glow period. (<b>c</b>) HPT-EP02 initial after-glow period. (<b>d</b>) HPT-EP02 late after-glow period.</p>
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<p>Optical emission spectra for the HPT-EP02 operating with 400 W RF power and 6 W reflected power, with 1 s on and 0.4 s off.</p>
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11 pages, 1613 KiB  
Article
The Photoionization Processes of Deep Trap Levels in n-GaN Films Grown by MOVPE Technique on Ammono-GaN Substrates
by Piotr Kruszewski, Konrad Sakowski, Krzysztof Gościński and Paweł Prystawko
Appl. Sci. 2024, 14(19), 8785; https://doi.org/10.3390/app14198785 - 29 Sep 2024
Viewed by 404
Abstract
In this paper, we present various theoretical models that accurately approximate the spectral density of the optical capture cross-section (σe0) obtained through the analysis of photo-capacitance transients using the deep-level optical spectroscopy (DLOS) technique applied to semi-transparent Ni/Au Schottky [...] Read more.
In this paper, we present various theoretical models that accurately approximate the spectral density of the optical capture cross-section (σe0) obtained through the analysis of photo-capacitance transients using the deep-level optical spectroscopy (DLOS) technique applied to semi-transparent Ni/Au Schottky barrier diodes (SBDs) fabricated on n-GaN films. The theoretical models examined in this study involved a variety of approaches, from the Lucovsky model that assumes no lattice relaxation to more sophisticated models such as the Chantre–Bois and the Pässler models, which consider the electron–phonon coupling phenomenon. By applying theoretical models to the experimentally determined data, we were able to estimate the photoionization (E0), trap level position (ET), and Franck–Condon (dFC) energy, respectively. In addition, the results of our analysis confirm that the photoionization processes of deep traps in n-GaN grown by the metal–organic vapor-phase epitaxy technique (MOVPE) are strongly coupled to the lattice. Moreover, it was shown that the Pässler model is preferred for the accurate determination of the individual trap parameters of defects present in n-GaN films grown on an Ammono-GaN substrate. Finally, a new trap level, Ec-1.99 eV with dFC = 0.15, that has not been previously reported in n-GaN films grown by MOVPE was found. Full article
(This article belongs to the Section Applied Physics General)
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<p>Configuration coordinate diagram describing electron–phonon coupling for an acceptor defect state (0/−). The arrows represent optical transitions as well as specific energies used in CC model.</p>
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<p>AFM topography of the n-GaN films grown on Ammono-GaN substrate for a square of 3 × 3 μm<sup>2</sup>.</p>
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<p>DLTS spectrum for a rate window of 20 s<sup>−1</sup> measured for Ni SBD for a filling time t<sub>P</sub> = 1 ms.</p>
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<p>SSPC spectrum for Ni/GaN SBDs measured at T = 293 K with Y-axis recalculated to trap concentration N<sub>T</sub>. Inset shows capture cross-section data determined from DLOS measurements using (1) and fitted with Lucovsky model (d<sub>FC</sub> = 0).</p>
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<p>Spectral dependence of electron photoionization cross-section for (<b>a</b>) entire spectral range; (<b>b</b>) a trap with Ec–2.05 eV; (<b>c</b>) for a trap with Ec–2.75 eV; and (<b>d</b>) a trap with Ec–3.33 eV, respectively. The red, blue and green solid lines correspond to theoretical models of Lucovsky, Chantre–Bois, and Pässler, respectively.</p>
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13 pages, 6527 KiB  
Article
A Novel Topology of a 3 × 3 Series Phased Array Antenna with Aperture-Coupled Feeding
by Guang Yang, Choon Sae Lee and Linsheng Zhang
Sensors 2024, 24(18), 6128; https://doi.org/10.3390/s24186128 - 23 Sep 2024
Viewed by 408
Abstract
This paper presents a novel 3 × 3 phased array antenna optimized for 4 GHz operation, achieving a realized gain of 13.2 dBi and enabling 30-degree beam steering with a minimal capacitance variation of 1.5 pF. The design features a series aperture-coupled feeding [...] Read more.
This paper presents a novel 3 × 3 phased array antenna optimized for 4 GHz operation, achieving a realized gain of 13.2 dBi and enabling 30-degree beam steering with a minimal capacitance variation of 1.5 pF. The design features a series aperture-coupled feeding mechanism that not only reduces the antenna’s size but also simplifies the fabrication process, making the device both cost-effective and compact. Integrating cost-efficient quadrature-hybrid phase shifters and novel power splitters with cascaded quadrature hybrids ensures uniform power distribution and precise beam steering. The innovative use of these components addresses common challenges in phased array systems, such as space constraints, high costs, and complex power distribution. Full article
(This article belongs to the Special Issue Antenna Array Design for Wireless Communications)
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<p>Proposed 3 × 3 phased array antenna: (<b>a</b>) exploded view, (<b>b</b>) top view of the radiating patches and upper substrate, and (<b>c</b>) top view of the lower substrate with a feeding network.</p>
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<p>Radiated power is saturated to a certain value as the aperture length increases.</p>
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<p>Different techniques used to design a single aperture coupled element integrated with a 1:1 power splitter.</p>
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<p>1 × N subarray structure with the proposed series aperture-coupled feeding network.</p>
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<p>The module’s breakdown and analysis: (<b>a</b>) subarray analysis, (<b>b</b>) experimental setup of proposed aperture coupled structure in exploded view, and (<b>c</b>) top view of one of the modules.</p>
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<p>The structures of the proposed phase shifter.</p>
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<p>Measured phase shift and transmission of the quadrature-hybrid phase shifter as a function of capacitance at 4 GHz.</p>
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<p>1 × 3 phased array with proposed series aperture-coupled feeding network.</p>
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<p>Proposed power splitter structure.</p>
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<p>A stub introduces reflection.</p>
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<p>The measured scattering parameter of (<b>a</b>) 1:2 power splitter with a stub length of 9.2 mm, and (<b>b</b>) 1:1 power splitter with a stub length of 8.4 mm.</p>
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<p>The operational procedure of the phased array system.</p>
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<p>The proposed antenna under test: (<b>a</b>) the front side with radiating patches and (<b>b</b>) the back side with the feeding network.</p>
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<p>The proposed antenna under test: (<b>a</b>) the front side with radiating patches and (<b>b</b>) the back side with the feeding network.</p>
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<p>Comparing the radiation patterns between simulation and measured data under various conditions. (<b>a</b>) Azimuthal phase shifters with a capacitance value of 1.5 pF and elevation phase shifters with a capacitance value of 2.0 pF. (<b>b</b>) Azimuthal phase shifters with a capacitance value of 2.0 pF and elevation phase shifters with a capacitance value of 2.0 pF. (<b>c</b>) Azimuthal phase shifters with a capacitance value of 3.0 pF and elevation phase shifters with a capacitance value of 2.0 pF. (<b>d</b>) Azimuthal phase shifters with a capacitance value of 1.5 pF and elevation phase shifters with a capacitance value of 3.0 pF. (<b>e</b>) Azimuthal phase shifters with a capacitance value of 2.0 pF and elevation phase shifters with a capacitance value of 3.0 pF. (<b>f</b>) Azimuthal phase shifters with a capacitance value of 3.0 pF and elevation phase shifters with a capacitance value of 3.0 pF. (<b>g</b>) Azimuthal phase shifters with a capacitance value of 1.5 pF and elevation phase shifters with a capacitance value of 1.5 pF. (<b>h</b>) Azimuthal phase shifters with a capacitance value of 2.0 pF and elevation phase shifters with a capacitance value of 1.5 pF. (<b>i</b>) Azimuthal phase shifters with a capacitance value of 3.0 pF and elevation phase shifters with a capacitance value of 1.5 pF.</p>
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<p>Comparing the radiation patterns between simulation and measured data under various conditions. (<b>a</b>) Azimuthal phase shifters with a capacitance value of 1.5 pF and elevation phase shifters with a capacitance value of 2.0 pF. (<b>b</b>) Azimuthal phase shifters with a capacitance value of 2.0 pF and elevation phase shifters with a capacitance value of 2.0 pF. (<b>c</b>) Azimuthal phase shifters with a capacitance value of 3.0 pF and elevation phase shifters with a capacitance value of 2.0 pF. (<b>d</b>) Azimuthal phase shifters with a capacitance value of 1.5 pF and elevation phase shifters with a capacitance value of 3.0 pF. (<b>e</b>) Azimuthal phase shifters with a capacitance value of 2.0 pF and elevation phase shifters with a capacitance value of 3.0 pF. (<b>f</b>) Azimuthal phase shifters with a capacitance value of 3.0 pF and elevation phase shifters with a capacitance value of 3.0 pF. (<b>g</b>) Azimuthal phase shifters with a capacitance value of 1.5 pF and elevation phase shifters with a capacitance value of 1.5 pF. (<b>h</b>) Azimuthal phase shifters with a capacitance value of 2.0 pF and elevation phase shifters with a capacitance value of 1.5 pF. (<b>i</b>) Azimuthal phase shifters with a capacitance value of 3.0 pF and elevation phase shifters with a capacitance value of 1.5 pF.</p>
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9 pages, 3131 KiB  
Article
Improved-Performance Amorphous Ga2O3 Photodetectors Fabricated by Capacitive Coupled Plasma-Assistant Magnetron Sputtering
by Yiming Liu, Chong Peng, Chang Liu, Cong Yu, Jiarui Guo, Yiyang Chang and Yi Zhao
Coatings 2024, 14(9), 1204; https://doi.org/10.3390/coatings14091204 - 19 Sep 2024
Viewed by 435
Abstract
Ga2O3 has received increasing interest for its potential in various applications relating to solar-blind photodetectors. However, attaining a balanced performance with Ga2O3-based photodetectors presents a challenge due to the intrinsic conductive mechanism of Ga2O [...] Read more.
Ga2O3 has received increasing interest for its potential in various applications relating to solar-blind photodetectors. However, attaining a balanced performance with Ga2O3-based photodetectors presents a challenge due to the intrinsic conductive mechanism of Ga2O3 films. In this work, we fabricated amorphous Ga2O3 (a-Ga2O3) metal–semiconductor–metal photodetectors through capacitive coupled plasma assisted magnetron sputtering at room temperature. Substantial enhancement in the responsivity is attained by regulating the capacitance-coupled plasma power during the deposition of a-Ga2O3. The proposed plasma energy generated by capacitive coupled plasma (CCP) effectively improved the disorder of amorphous Ga2O3 films. The results of X-ray photoelectron spectroscopy (XPS) and current-voltage tests demonstrate that the additional plasma introduced during the sputtering effectively adjust the concentration of oxygen vacancy effectively, exhibiting a trade-off effect on the performance of a-Ga2O3 photodetectors. The best overall performance of a-Ga2O3 photodetectors exhibits a high responsivity of 30.59 A/W, a low dark current of 4.18 × 10−11, and a decay time of 0.12 s. Our results demonstrate that the introduction of capacitive coupled plasma during deposition could be a potential approach for modifying the performance of photodetectors. Full article
(This article belongs to the Collection Feature Paper Collection in Thin Films)
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<p>(<b>a</b>) Schematic of Ga<sub>2</sub>O<sub>3</sub> MSM photodetector. (<b>b</b>) The microscopy image of the Ga<sub>2</sub>O<sub>3</sub> photodetectors (<b>c</b>) Schematic of CCP-assistant magnetron sputtering system.</p>
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<p>(<b>a</b>) XRD patterns of S0–S60 as well as c-sapphire substrate. (<b>b</b>) AFM topographies of a-Ga<sub>2</sub>O<sub>3</sub> under different RF-bias powers.</p>
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<p>(<b>a</b>) Transmission spectra, (<b>b</b>) plots of (αhν)<sup>2</sup> versus hν, (<b>c</b>) E<sub>g</sub> and E<sub>u</sub> of Ga<sub>2</sub>O<sub>3</sub> films deposited on c-plane sapphire substrate under different RF-bias powers.</p>
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<p>I-V characteristics in log coordinates of S0–S60 (<b>a</b>) in the dark and (<b>b</b>) illuminated with 254 nm UV light. (<b>c</b>) I<sub>photo</sub>/I<sub>dark</sub>, responsivity, and detectivity plotted as functions of RF-bias power. (<b>d</b>) Normalized spectral response of S0–S60 under 20 V bias.</p>
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<p>(<b>a</b>) O 1 s and (<b>b</b>) Ga 2p<sub>3/2</sub> core-level spectra of amorphous Ga<sub>2</sub>O<sub>3</sub> films deposited under different RF-bias powers.</p>
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<p>(<b>a</b>) Normalized transient response of S0–S60 photodetectors in one single cycle. (<b>b</b>) Transient response of S0–S60 photodetectors with repetition test.</p>
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33 pages, 2403 KiB  
Review
Hydrothermal Carbonization of Biomass for Electrochemical Energy Storage: Parameters, Mechanisms, Electrochemical Performance, and the Incorporation of Transition Metal Dichalcogenide Nanoparticles
by Manuel Prieto, Hangbo Yue, Nicolas Brun, Gary J. Ellis, Mohammed Naffakh and Peter S. Shuttleworth
Polymers 2024, 16(18), 2633; https://doi.org/10.3390/polym16182633 - 18 Sep 2024
Viewed by 946
Abstract
Given the pressing climate and sustainability challenges, shifting industrial processes towards environmentally friendly practices is imperative. Among various strategies, the generation of green, flexible materials combined with efficient reutilization of biomass stands out. This review provides a comprehensive analysis of the hydrothermal carbonization [...] Read more.
Given the pressing climate and sustainability challenges, shifting industrial processes towards environmentally friendly practices is imperative. Among various strategies, the generation of green, flexible materials combined with efficient reutilization of biomass stands out. This review provides a comprehensive analysis of the hydrothermal carbonization (HTC) process as a sustainable approach for developing carbonaceous materials from biomass. Key parameters influencing hydrochar preparation are examined, along with the mechanisms governing hydrochar formation and pore development. Then, this review explores the application of hydrochars in supercapacitors, offering a novel comparative analysis of the electrochemical performance of various biomass-based electrodes, considering parameters such as capacitance, stability, and textural properties. Biomass-based hydrochars emerge as a promising alternative to traditional carbonaceous materials, with potential for further enhancement through the incorporation of extrinsic nanoparticles like graphene, carbon nanotubes, nanodiamonds and metal oxides. Of particular interest is the relatively unexplored use of transition metal dichalcogenides (TMDCs), with preliminary findings demonstrating highly competitive capacitances of up to 360 F/g when combined with hydrochars. This exceptional electrochemical performance, coupled with unique material properties, positions these biomass-based hydrochars interesting candidates to advance the energy industry towards a greener and more sustainable future. Full article
(This article belongs to the Special Issue Carbonized Polymers and Their Functional Applications)
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<p>Temperature variation scenarios for the next 100 years [<a href="#B7-polymers-16-02633" class="html-bibr">7</a>], where RCP is ‘Representative Concentration Pathway’. (<b>a</b>) represents CO<sub>2</sub> concentration scenarios and (<b>b</b>) represents global temperature increase scenarios. The dashed line indicates pre-industrial CO<sub>2</sub> concentration.</p>
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<p>Schematic on hydrothermal carbonization precursors, products, and applications.</p>
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<p>Mechanistic routes of cellulose and hemicellulose breakdown under hydrothermal conditions. Scheme constructed from information in references [<a href="#B76-polymers-16-02633" class="html-bibr">76</a>,<a href="#B77-polymers-16-02633" class="html-bibr">77</a>,<a href="#B80-polymers-16-02633" class="html-bibr">80</a>].</p>
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<p>Lignin hydrothermal mechanism. Adapted from [<a href="#B19-polymers-16-02633" class="html-bibr">19</a>] with permission from Elsevier.</p>
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<p>Energy storage mechanisms in a supercapacitor (adapted from [<a href="#B159-polymers-16-02633" class="html-bibr">159</a>]).</p>
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15 pages, 9899 KiB  
Article
Modeling and Experimental Validation of Dual-Output Flyback Converters with Capacitive Coupling for Improved Cross-Regulation
by Pierpaolo Granello and Luigi Schirone
Electronics 2024, 13(17), 3503; https://doi.org/10.3390/electronics13173503 - 3 Sep 2024
Viewed by 415
Abstract
This paper addresses cross-regulation in dual-output flyback converters. An original analytical framework is developed to model the impact of a balancing capacitor connected among a transformer’s secondary windings in order to mitigate the cross-regulation among different outputs. To validate the proposed model, a [...] Read more.
This paper addresses cross-regulation in dual-output flyback converters. An original analytical framework is developed to model the impact of a balancing capacitor connected among a transformer’s secondary windings in order to mitigate the cross-regulation among different outputs. To validate the proposed model, a prototype dual-output flyback converter was built and tested for a wide range of load unbalances. The measured cross-regulation error was compared with the theoretical predictions provided by the proposed model, obtaining a tight fit, which confirms the validity of the proposed approach. Full article
(This article belongs to the Special Issue New Insights in Power Electronics: Prospects and Challenges)
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<p>Flyback converter with <math display="inline"><semantics> <msub> <mi>C</mi> <mi>C</mi> </msub> </semantics></math> balancing capacitor.</p>
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<p>Modeling of voltage and current waveforms in DCM.</p>
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<p>Equivalent circuits during different subintervals. (<b>a</b>) Subinterval 1; (<b>b</b>) Subinterval 2; (<b>c</b>) Subinterval 3; (<b>d</b>) Subinterval 4.</p>
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<p>Prototype circuital schematic with a single regulated output.</p>
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<p>Experimental prototype. (<b>a</b>) Top side; (<b>b</b>) Bottom side; (<b>c</b>) Thermal image under full load conditions.</p>
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<p>Output voltage cross-regulation without balancing capacitor.</p>
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<p>Difference in output voltages with balanced load currents.</p>
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<p>Measurements with unbalanced output current loads. (<b>a</b>) Voltage on regulated output (+17 V_FB); (<b>b</b>) Voltage on unregulated output (+17 V); (<b>c</b>) Cross-regulation error.</p>
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<p>Measured voltage across balancing <math display="inline"><semantics> <msub> <mi>C</mi> <mi>C</mi> </msub> </semantics></math> capacitor.</p>
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<p>Comparison between measured and simulated results.</p>
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15 pages, 3059 KiB  
Article
Preliminary Exploration of Low Frequency Low-Pressure Capacitively Coupled Ar-O2 Plasma
by Niaz Wali, Weiwen Xiao, Qayam Ud Din, Najeeb Ur Rehman, Chiyu Wang, Jiatong Ma, Wenjie Zhong and Qiwei Yang
Processes 2024, 12(9), 1858; https://doi.org/10.3390/pr12091858 - 31 Aug 2024
Viewed by 696
Abstract
Non-thermal plasma as an emergent technology has received considerable attention for its wide range of applications in agriculture, material synthesis, and the biomedical field due to its low cost and portability. It has promising antimicrobial properties, making it a powerful tool for bacterial [...] Read more.
Non-thermal plasma as an emergent technology has received considerable attention for its wide range of applications in agriculture, material synthesis, and the biomedical field due to its low cost and portability. It has promising antimicrobial properties, making it a powerful tool for bacterial decontamination. However, traditional techniques for producing non-thermal plasma frequently rely on radiofrequency (RF) devices, despite their effectiveness, are intricate and expensive. This study focuses on generating Ar-O2 capacitively coupled plasma under vacuum conditions, utilizing a low-frequency alternating current (AC) power supply, to evaluate the system’s antimicrobial efficacy. A single Langmuir probe diagnostic was used to assess the key plasma parameters such as electron density (ne), electron temperature (Te), and electron energy distribution function (EEDF). Experimental results showed that ne increases (7 × 1015 m−3 to 1.5 × 1016 m−3) with a rise in pressure and AC power. Similarly, the EEDF modified into a bi-Maxwellian distribution with an increase in AC power, showing a higher population of low-energy electrons at higher power. Finally, the generated plasma was tested for antimicrobial treatment of Xanthomonas campestris pv. Vesicatoria. It is noted that the plasma generated by the AC power supply, at a pressure of 0.5 mbar and power of 400 W for 180 s, has 75% killing efficiency. This promising result highlights the capability of the suggested approach, which may be a budget-friendly and effective technique for eliminating microbes with promising applications in agriculture, biomedicine, and food processing. Full article
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<p>Schematic diagram of the AC capacitively coupled experimental setup with installed single Langmuir probe to study the low-frequency Ar-O<sub>2</sub> plasma discharge.</p>
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<p>(<b>a</b>) Current–voltage waveform; (<b>b</b>) the instantaneous power as a function of time. The experiment was conducted at 4% oxygen content, 100 W applied AC power, 6 kHz fixed frequency, and 0.5 mbar pressure. (<b>c</b>) The I-V characteristics of AC power supply generated Argon and Ar-O<sub>2</sub> (O<sub>2</sub>, 4%) plasma at ~400 W and 0.5 mbar.</p>
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<p>(<b>a</b>) Represents the evolution of the <math display="inline"><semantics> <mrow> <msub> <mrow> <mi mathvariant="normal">n</mi> </mrow> <mrow> <mi mathvariant="normal">e</mi> </mrow> </msub> </mrow> </semantics></math> with different AC power supply of Argon plasma, (<b>b</b>) the evolution of the <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>n</mi> </mrow> <mrow> <mi>e</mi> </mrow> </msub> </mrow> </semantics></math> with different AC power supplies of Ar-O<sub>2</sub> plasma at 0.5 mbar and 0.7 mbar, respectively. The grey bars show a plasma density peak when the AC power is at ~400 W and 0.5 mbar.</p>
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<p>The evolution of the <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>n</mi> </mrow> <mrow> <mi>e</mi> </mrow> </msub> </mrow> </semantics></math> with different <math display="inline"><semantics> <mrow> <msub> <mrow> <mi mathvariant="normal">O</mi> </mrow> <mrow> <mn>2</mn> </mrow> </msub> </mrow> </semantics></math> contents at fixed AC power ~400 W for two different gas pressures ~0.3 mbar and ~0.5 mbar, and the evolution of the <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>n</mi> </mrow> <mrow> <mi>e</mi> </mrow> </msub> </mrow> </semantics></math> with different <math display="inline"><semantics> <mrow> <msub> <mrow> <mi mathvariant="normal">O</mi> </mrow> <mrow> <mn>2</mn> </mrow> </msub> </mrow> </semantics></math> contents at fixed RF power ~130 W and fixed gas pressure ~0.3 mbar. Similar trends of density changes are observed for both types of discharges. The RF curve is deduced from the Figure 4c of Ref. [<a href="#B13-processes-12-01858" class="html-bibr">13</a>].</p>
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<p>(<b>a</b>) Represents the evolution of the <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>T</mi> </mrow> <mrow> <mi>e</mi> </mrow> </msub> </mrow> </semantics></math> with different AC power at 0.5 mbar and 0.7 mbar, respectively. (<b>b</b>) a comparison of the <span class="html-italic">T<sub>e</sub></span> in different discharge types by the AC power supply and the RF power supply. The RF curve is deduced from the Figure 5c of Ref. [<a href="#B13-processes-12-01858" class="html-bibr">13</a>].</p>
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<p>(<b>a</b>) Represents the EEDF at fixed AC input power, and (<b>b</b>) illustrates the EEDF at fixed pressure. The blue arrow shows that the EEDF is non-Maxwellian.</p>
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<p>Photographs of (<b>a</b>) untreated <span class="html-italic">X. c.</span> pv. <span class="html-italic">vesicatoria</span> bacteria sample, (<b>b</b>) Ar-O<sub>2</sub> plasma treatment, (<b>c</b>) treated for 90 s, and (<b>d</b>) treated for 180 s, (<b>e</b>) the number of survival colonies after Ar-O<sub>2</sub> (4% oxygen contents) plasma treatment. The treatment was carried out at a fixed frequency of 6 kHz, 0.5 mbar pressure, and power of 400 W.</p>
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17 pages, 2636 KiB  
Article
Highly Sensitive and Flexible Capacitive Pressure Sensors Combined with Porous Structure and Hole Array Using Sacrificial Templates and Laser Ablation
by Yibin Zhao, Jingyu Zhou, Chenkai Jiang, Tianlong Xu, Kaixin Li, Dawei Zhang and Bin Sheng
Polymers 2024, 16(16), 2369; https://doi.org/10.3390/polym16162369 - 21 Aug 2024
Viewed by 790
Abstract
Flexible, wearable pressure sensors offer numerous benefits, including superior sensing capabilities, a lightweight and compact design, and exceptional conformal properties, making them highly sought after in various applications including medical monitoring, human–computer interactions, and electronic skins. Because of their excellent characteristics, such as [...] Read more.
Flexible, wearable pressure sensors offer numerous benefits, including superior sensing capabilities, a lightweight and compact design, and exceptional conformal properties, making them highly sought after in various applications including medical monitoring, human–computer interactions, and electronic skins. Because of their excellent characteristics, such as simple fabrication, low power consumption, and short response time, capacitive pressure sensors have received widespread attention. As a flexible polymer material, polydimethylsiloxane (PDMS) is widely used in the preparation of dielectric layers for capacitive pressure sensors. The Young’s modulus of the flexible polymer can be effectively decreased through the synergistic application of sacrificial template and laser ablation techniques, thereby improving the functionality of capacitive pressure sensors. In this study, a novel sensor was introduced. Its dielectric layer was developed through a series of processes, including the use of a sacrificial template method using NaCl microparticles and subsequent CO2 laser ablation. This porous PDMS dielectric layer, featuring an array of holes, was then sandwiched between two flexible electrodes to create a capacitive pressure sensor. The sensor demonstrates a sensitivity of 0.694 kPa−1 within the pressure range of 0–1 kPa and can effectively detect pressures ranging from 3 Pa to 200 kPa. The sensor demonstrates stability for up to 500 cycles, with a rapid response time of 96 ms and a recovery time of 118 ms, coupled with a low hysteresis of 6.8%. Furthermore, our testing indicates that the sensor possesses limitless potential for use in detecting human physiological activities and delivering signals. Full article
(This article belongs to the Special Issue Polymer-Based Flexible Materials, 2nd Edition)
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<p>(<b>a</b>) Schematic illustration of the process for preparing a porous PDMS dielectric layer. (<b>b</b>) A detailed schematic representation of the laser ablation process. (<b>c</b>) A visual representation of the flexible capacitive pressure sensor, including an optical microscope view of the hole array profile in the bottom left panel and scanning electron microscopy images of microporous structures in the bottom two panels on the right. (<b>d</b>) Graph depicting the distribution of micropore sizes within the porous structures of the dielectric layers.</p>
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<p>(<b>a</b>) Illustration of the workflow for a porous flexible capacitive pressure sensor, featuring an array of holes structure. (<b>b</b>) A schematic diagram elucidating the sensing mechanism of a flexible capacitive pressure sensor, featuring a porous dielectric layer without an array of holes structure.</p>
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<p>(<b>a</b>) The variation curves depicting the relationship between relative capacitance and pressure within the range of 0 to 200 kPa for five test samples. (<b>b</b>) A linear fit curve illustrating the correlation between relative capacitance change values and pressure values within the pressure range of 0 to 1 kPa. (<b>c</b>) Linear fit curves demonstrating the relationship between relative capacitance change values and pressure values within the pressure range of 1 kPa to 10 kPa. (<b>d</b>) Fit curves representing the relationship between relative capacitance change values and pressure values within the pressure range of 10 to 200 kPa.</p>
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<p>(<b>a</b>) Variation curves of relative capacitance values as a function of pressure ranging from 0 to 200 kPa for four sensors with different hole array spacings. (<b>b</b>) Linear fitting curves of relative capacitance change values versus pressure values for the four tested sensors within a pressure range of 0–1 kPa. (<b>c</b>) Linear fit curves of relative capacitance change versus pressure values for the four tested transducers for pressures ranging from 1 to 200 kPa. (<b>d</b>) Variation curve of relative capacitance with porosity at a pressure of 1 kPa.</p>
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<p>Comprehensive performance testing of capacitive pressure sensors utilizing the sample pPDMS-h<sub>2</sub>. (<b>a</b>) The sensor’s minimum pressure detection limit. (<b>b</b>) The sensor’s pressure response to the loading and unloading of 5 g, 25 g, and 40 g weights. (<b>c</b>) The sensor’s response time at a pressure of 0.85 kPa. (<b>d</b>) The stability test of the sensor’s responsiveness at a pressure of 105 kPa for 500 cycles. (<b>e</b>) The test of the hysteresis in the capacitive response of pressure sensors between 0 and 200 kPa during loading and unloading. (<b>f</b>) The test of the sensor’s response to stepped pressure changed between 0 and 70 kPa.</p>
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<p>(<b>a</b>) Detection of human physiological activities at various locations on the body through the utilization of capacitive sensor pPDMS-h<sub>2</sub>. (<b>b</b>) Variations in capacitance levels during the flexion of the elbow. (<b>c</b>) Tracking changes in relative capacitance during the act of swallowing. (<b>d</b>) The response of the sensor from a volunteer engaging in leg lifts. (<b>e</b>) The pressure applied by individual fingers on a cup of water while being held is measured. (<b>f</b>,<b>g</b>) Generating specific Morse code signals through the act of pressing the sensor with the fingers.</p>
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11 pages, 18667 KiB  
Article
Corrosion and Interfacial Contact Resistance of NiTi Alloy as a Promising Bipolar Plate for PEMFC
by Yingping Li, Xiaofen Wang, Yuanyuan Li, Zhuo He, Guohong Zhang, Zhen Wang, Shaohua Wang, Fei Hu and Qiongyu Zhou
Molecules 2024, 29(15), 3696; https://doi.org/10.3390/molecules29153696 - 5 Aug 2024
Viewed by 749
Abstract
Titanium (Ti) is generally considered as an ideal bipolar plate (BPP) material because of its excellent corrosion resistance, good machinability and lightweight nature. However, the easy-passivation property, which leads to increased interfacial contact resistance (ICR) and subsequently decreased cell performance, limits its large-scale [...] Read more.
Titanium (Ti) is generally considered as an ideal bipolar plate (BPP) material because of its excellent corrosion resistance, good machinability and lightweight nature. However, the easy-passivation property, which leads to increased interfacial contact resistance (ICR) and subsequently decreased cell performance, limits its large-scale commercial application in proton exchange membrane fuel cells (PEMFCs). In this paper, we proposed a NiTi alloy prepared by suction casting as a promising bipolar plate for PEMFCs. This NiTi alloy exhibits significantly decreased ICR values (16.8 mΩ cm2 at 1.4 MPa) compared with pure Ti (88.6 mΩ cm2 at 1.4 MPa), along with enhanced corrosion resistance compared with pure nickel (Ni). The superior corrosion resistance of NiTi alloy is accredited to the nobler open circuit potential and corrosion potential, coupled with low corrosion current densities and passive current densities. The improved ICR can be interpreted by the existence of high-proportioned metallic Ni in the passive film, which contributes to the reduced capacitance characteristic of the passive film (compared with Ti) and enhances charge conduction. This work provides a feasible option to ameliorate BPP material that may have desirable corrosion resistance and ICR. Full article
(This article belongs to the Special Issue Electroanalysis of Biochemistry and Material Chemistry)
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<p>The (<b>a</b>) scanning electron microscopy (SEM) image and (<b>b</b>,<b>c</b>) corresponding elemental mapping results of the indicated region (white square in subfigure (<b>a</b>)) of the NiTi alloy prepared by suction casting, along with (<b>d</b>) the X-ray diffraction (XRD) pattern.</p>
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<p>The (<b>a</b>) open circuit potential versus time (<span class="html-italic">E</span><sub>OCP</sub>–<span class="html-italic">t</span>) curves and (<b>b</b>) potentiodynamic polarization curves of NiTi alloy, pure Ti and pure Ni.</p>
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<p>The (<b>a</b>) potentiostatic polarization curves, interfacial contact resistance (ICR) values: under (<b>b</b>) different compaction force and (<b>c</b>) the pressure of 1.4 MPa, along with (<b>d</b>) the hardness of NiTi alloy, pure Ti and pure Ni.</p>
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<p>X-ray photoelectron spectroscopy (XPS) analysis results of different materials (NiTi alloy, pure Ti and pure Ni): (<b>a</b>) Ni 2p, (<b>b</b>) Ti 2p and (<b>c</b>) O 1s.</p>
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<p>Electrochemical impedance spectroscopy (EIS) analysis of NiTi alloy, pure Ti and pure Ni before ((<b>a</b>) Nyqusit plots, (<b>c</b>) Bode-phase plots) and after ((<b>b</b>) Nyqusit plots, (<b>d</b>) Bode-phase plots) potentiostatic polarization.</p>
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<p>SEM images of (<b>a</b>) pure Ni, (<b>b</b>) pure Ti and (<b>c</b>) NiTi alloy after potentiostatic polarization measurements, along with (<b>d</b>,<b>e</b>) elemental mapping results and (<b>f</b>) semi-quantitative result of the indicated region (white square in subfigure (<b>c</b>)).</p>
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<p>The schematic diagram for testing the <span class="html-italic">R</span><sub>GDL</sub> and <span class="html-italic">R</span><sub>total</sub> values.</p>
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18 pages, 5866 KiB  
Article
Synthesis of Hureaulite Mn5(H2O)4(PO3OH)2(PO4)2 with an Open 3D Network Structure as Electrode Material for Electrochemical Capacitors
by Cesar Iván García Guajardo, Jorge Alexis Zúñiga Martínez, Roxana Berlanga Pérez, Luis Alberto López Pavón and Raúl Lucio Porto
Processes 2024, 12(8), 1622; https://doi.org/10.3390/pr12081622 - 2 Aug 2024
Viewed by 1002
Abstract
Mn5(H2O)4(PO3OH)2(PO4)2 with an open 3D network was prepared and studied as electrode material for electrochemical capacitors. The material exhibits a tunnel structure along the c axis, characterized by a hydrogen [...] Read more.
Mn5(H2O)4(PO3OH)2(PO4)2 with an open 3D network was prepared and studied as electrode material for electrochemical capacitors. The material exhibits a tunnel structure along the c axis, characterized by a hydrogen bond network formed by water molecules bonded to MnO6 octahedra and PO3-OH tetrahedra units, the latter containing an acidic proton. Electrochemical studies were conducted on both alkaline and neutral electrolytes, revealing a profile indicative of a rapid faradaic process coupled with pseudocapacitance and electrochemical double-layer capacitance. This study proposes a mechanism that involves the interaction between the acidic proton in the tunnel structure and OH ions from the electrolyte, which diffuse through the hydrogen bond network. The material achieved a maximum specific capacitance of 184 Fg−1 at a scan rate of 5 mVs−1, with an areal capacitance of 4600 µFcm−2 in 3M KOH. This demonstrates its potential as a high-performance electrode for energy storage applications. Full article
(This article belongs to the Special Issue Advances in Electrode Materials for Energy Storage Applications)
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<p>(<b>a</b>) XRD of Mn<sub>5</sub>(H<sub>2</sub>O)<sub>4</sub>(PO<sub>3</sub>OH)<sub>2</sub>(PO<sub>4</sub>)<sub>2</sub>. (<b>b</b>) Mn<sub>5</sub>O<sub>22</sub> units. (<b>c</b>) Crystalline structure of Mn<sub>5</sub>(H<sub>2</sub>O)<sub>4</sub>(PO<sub>3</sub>OH)<sub>2</sub>(PO<sub>4</sub>)<sub>2</sub>. (<b>d</b>) Open structure of the channel (pocket) showing hydrogen bonding with water molecules and PO<sub>3</sub>-OH groups. (<b>e</b>–<b>g</b>) Tunnels in the crystalline structure of Mn<sub>5</sub>(H<sub>2</sub>O)<sub>4</sub>(PO<sub>3</sub>OH)<sub>2</sub>(PO<sub>4</sub>)<sub>2</sub> across different axes.</p>
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<p>(<b>a</b>) SEM image of Mn<sub>5</sub>(H<sub>2</sub>O)<sub>4</sub>(PO<sub>3</sub>OH)<sub>2</sub>(PO<sub>4</sub>)<sub>2</sub>. (<b>b</b>) RAMAN spectrum. (<b>c</b>,<b>d</b>) FTIR spectrum of Mn<sub>5</sub>(H<sub>2</sub>O)<sub>4</sub>(PO<sub>3</sub>OH)<sub>2</sub>(PO<sub>4</sub>)<sub>2</sub>.</p>
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<p>Cyclic voltammograms of Mn<sub>5</sub>(H<sub>2</sub>O)<sub>4</sub>(PO<sub>3</sub>OH)<sub>2</sub>(PO<sub>4</sub>)<sub>2</sub> at 5 mVs<sup>−1</sup> in (<b>a</b>) 3M KOH, 1M KOH, 3M NaOH, and 3M LiOH. (<b>b</b>) Cyclic voltammogram of Mn<sub>5</sub>(H<sub>2</sub>O)<sub>4</sub>(PO<sub>3</sub>OH)<sub>2</sub>(PO<sub>4</sub>)<sub>2</sub> at 5 mVs<sup>−1</sup> in 3M K<sub>3</sub>PO<sub>4</sub> and 3M TMAOH. (<b>c</b>) Specific capacitance of Mn<sub>5</sub>(H<sub>2</sub>O)<sub>4</sub>(PO<sub>3</sub>OH)<sub>2</sub>(PO<sub>4</sub>)<sub>2</sub> in different electrolytes as a function of the scan rate. (<b>d</b>) Specific capacitance of Mn<sub>5</sub>(H<sub>2</sub>O)<sub>4</sub>(PO<sub>3</sub>OH)<sub>2</sub>(PO<sub>4</sub>)<sub>2</sub> at 5 mVs<sup>−1</sup> in different electrolytes as a function of pH. (<b>e</b>) Cyclic voltammogram of Mn<sub>5</sub>(H<sub>2</sub>O)<sub>4</sub>(PO<sub>3</sub>OH)<sub>2</sub>(PO<sub>4</sub>)<sub>2</sub> at 5 mVs<sup>−1</sup> in 5M LiNO<sub>3</sub> and 1M Na<sub>2</sub>SO<sub>4</sub>. (<b>f</b>) EIS spectra of Mn<sub>5</sub>(H<sub>2</sub>O)<sub>4</sub>(PO<sub>3</sub>OH)<sub>2</sub>(PO<sub>4</sub>)<sub>2</sub> in different electrolytes.</p>
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<p>The specific charge of Mn<sub>5</sub>(H<sub>2</sub>O)<sub>4</sub>(PO<sub>3</sub>OH)<sub>2</sub>(PO<sub>4</sub>)<sub>2</sub> as a function of applied voltage in alkaline electrolytes (<b>a</b>) 3M KOH and (<b>c</b>) 1M KOH. Charge percentage as a function of scan rate in (<b>b</b>) 3M KOH and (<b>d</b>) 1M KOH.</p>
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<p>The specific charge of Mn<sub>5</sub>(H<sub>2</sub>O)<sub>4</sub>(PO<sub>3</sub>OH)<sub>2</sub>(PO<sub>4</sub>)<sub>2</sub> as a function of applied voltage in alkaline electrolytes (<b>a</b>) 3M NaOH and (<b>c</b>) 3M LiOH. Charge percentage as a function of scan rate in (<b>b</b>) 3M NaOH and (<b>d</b>) 3M LiOH.</p>
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<p>The specific charge of Mn<sub>5</sub>(H<sub>2</sub>O)<sub>4</sub>(PO<sub>3</sub>OH)<sub>2</sub>(PO<sub>4</sub>)<sub>2</sub> as a function of applied voltage in alkaline electrolytes (<b>a</b>) 3M TMAOH and (<b>c</b>) 3M K<sub>3</sub>PO<sub>4</sub>. Charge percentage as a function of scan rate in (<b>b</b>) 3M TMAOH and (<b>d</b>) 3M K<sub>3</sub>PO<sub>4</sub>.</p>
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<p>The specific charge of Mn<sub>5</sub>(H<sub>2</sub>O)<sub>4</sub>(PO<sub>3</sub>OH)<sub>2</sub>(PO<sub>4</sub>)<sub>2</sub> as a function of applied voltage in neutral electrolytes (<b>a</b>) 5M LiNO<sub>3</sub> and (<b>c</b>) 1M Na<sub>2</sub>SO<sub>4</sub>. Charge percentage as a function of scan rate in (<b>b</b>) 5M LiNO<sub>3</sub> and (<b>d</b>) 1M Na<sub>2</sub>SO<sub>4</sub>.</p>
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<p>(<b>a</b>) Active thickness in different electrolytes. (<b>b</b>) Scheme of the proposed mechanism. (<b>c</b>) Constant charge–discharge plots of Mn<sub>5</sub>(H<sub>2</sub>O)<sub>4</sub>(PO<sub>3</sub>OH)<sub>2</sub>(PO<sub>4</sub>)<sub>2</sub> Swagelok-type device; the inset shows the Ragone plot. (<b>d</b>) Percentage of capacitance retention in a three-electrode cell and a two-electrode Swagelok-type cell.</p>
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22 pages, 26955 KiB  
Article
Bandgap Calculation and Experimental Analysis of Piezoelectric Phononic Crystals Based on Partial Differential Equations
by Chunsheng Song, Yurun Han, Youliang Jiang, Muyan Xie, Yang Jiang and Kangchao Tang
Materials 2024, 17(15), 3780; https://doi.org/10.3390/ma17153780 - 1 Aug 2024
Viewed by 597
Abstract
Focusing on the bending wave characteristic of plate–shell structures, this paper derives the complex band curve of piezoelectric phononic crystal based on the equilibrium differential equation in the plane stress state using COMSOL PDE 6.2. To ascertain the computational model’s accuracy, the computed [...] Read more.
Focusing on the bending wave characteristic of plate–shell structures, this paper derives the complex band curve of piezoelectric phononic crystal based on the equilibrium differential equation in the plane stress state using COMSOL PDE 6.2. To ascertain the computational model’s accuracy, the computed complex band curve is then cross-validated against real band curves obtained through coupling simulations. Utilizing this model, this paper investigates the impact of structural and electrical parameters on the bandgap range and the attenuation coefficient in the bandgap. Results indicate that the larger surface areas of the piezoelectric sheet correspond to lower center bands in the bandgap, while increased thickness widens the attenuation coefficient range with increased peak values. Furthermore, the influence of inductance on the bandgap conforms to the variation law of the electrical LC resonance frequency, and increased resistance widens the attenuation coefficient range albeit with decreased peak values. The incorporation of negative capacitance significantly expands the low-frequency bandgap range. Visualized through vibration transfer simulations, the vibration-damping ability of the piezoelectric phononic crystal is demonstrated. Experimentally, this paper finds that two propagation modes of bending waves (symmetric and anti-symmetric) result in variable voltage amplitudes, and the average vibration of the system decreases by 4–5 dB within the range of 1710–1990 Hz. The comparison between experimental and model-generated data confirms the accuracy of the attenuation coefficient calculation model. This convergence between experimental and computational results emphasizes the validity and usefulness of the proposed model, and this paper provides theoretical support for the application of piezoelectric phononic crystals in the field of plate–shell vibration reduction. Full article
(This article belongs to the Special Issue Acoustic and Mechanical Metamaterials: Recent Advances)
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<p>Piezoelectric phononic crystal plate.</p>
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<p>Schematic diagram of the unit cell.</p>
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<p>Imposed boundary condition.</p>
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<p>Real band diagram of piezoelectric phonon crystal. (<b>a</b>) Diagram of the 2D irreducible Brillouin zone. (<b>b</b>) Real band curve (shaded area represents the bandgap range).</p>
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<p>Complex band diagram of piezoelectric phonon crystal (<math display="inline"><semantics> <mrow> <mo>Γ</mo> <mi mathvariant="normal">X</mi> </mrow> </semantics></math>).</p>
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<p>Attenuation coefficient for different coverage.</p>
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<p>Attenuation coefficient for different normalized coverages.</p>
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<p>Attenuation coefficient with different inductances. (<b>a</b>) Comparison of discrete values for different inductances. (<b>b</b>) Comparison of continuous values for different inductances (intensity of the color indicates the magnitude of the attenuation coefficient).</p>
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<p>Attenuation coefficient with different resistances. (<b>a</b>) Comparison of discrete values for different resistances. (<b>b</b>) Comparison of continuous values for different resistances (intensity of the color indicates the magnitude of the attenuation coefficient).</p>
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<p>Attenuation coefficient with different resistances. (<b>a</b>) Comparison of discrete values for different resistances. (<b>b</b>) Comparison of continuous values for different resistances (intensity of the color indicates the magnitude of the attenuation coefficient).</p>
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<p>Comparison between negative capacitance circuits and traditional LR circuits.</p>
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<p>Finite element model.</p>
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<p>Vibration transfer curve (simulation).</p>
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<p>Current diagram (simulation).</p>
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<p>Experimental platform.</p>
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<p>Forms of wave propagation and voltages for different connection forms. (<b>a</b>) Symmetrical model. (<b>b</b>) Anti-symmetrical model. (<b>c</b>) Positive/positive–negative/negative connection form (abbreviated as PPF). (<b>d</b>) Positive/negative–negative/positive connection form (abbreviated as PNF). (<b>e</b>) Form of unilateral connection (abbreviated as UCF). (<b>f</b>) Voltage measured by PPF. (<b>g</b>) Voltage measured by PNF. (<b>h</b>) Voltage measured by UCF.</p>
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<p>Comparison between simulation attenuation coefficient and experiment. (<b>a</b>) Attenuation factor (L = 0.1 H, R = 270 Ω). (<b>b</b>) Vibration transfer curves.</p>
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<p>Comparison between simulation attenuation coefficient and experiment. (<b>a</b>) Attenuation factor (L = 0.1 H, R = 270 Ω). (<b>b</b>) Vibration transfer curves.</p>
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35 pages, 13372 KiB  
Review
A Review of Experimental Investigations into the Time Evolution of Low-Pressure Capacitively Coupled Plasmas in Their Early Stages of Development
by Pietro Mandracci
Plasma 2024, 7(3), 531-565; https://doi.org/10.3390/plasma7030029 - 22 Jul 2024
Viewed by 593
Abstract
Capacitively coupled plasma (CCP) discharges working at low pressure are widely used for the synthesis of thin films and the modification of the surface properties of materials. Due to their importance, considerable research was carried out over the years to understand their working [...] Read more.
Capacitively coupled plasma (CCP) discharges working at low pressure are widely used for the synthesis of thin films and the modification of the surface properties of materials. Due to their importance, considerable research was carried out over the years to understand their working mechanisms, and the physical properties of the CCP discharges were measured by many research groups, while simulations of their characteristics were often performed using both fluid and kinematic models. However, most of the simulation and characterization work found in the literature is focused on the discharge steady-state characteristics, since most of the applications rely on its properties, while less information is available on the early stages. In fact, the initial stages of CCP plasma discharges are of great importance to improve the understanding of their ignition process as well as to figure out the working mechanism of pulsed discharges, the use of which has increased in importance in recent years. In this work, a review of the results published in recent years concerning the physical mechanisms involved in the very first stages of low-pressure CCP discharges is presented, focusing on the first few microseconds of discharge time. Full article
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<p>Schematic diagram of the GEC reference cell pumping apparatus. The four pumping windows are visible in the diagram. Reprinted from [<a href="#B11-plasma-07-00029" class="html-bibr">11</a>], with permission of AIP Publishing.</p>
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<p>A simplified electrical circuit used to describe the GEC cell behavior. <span class="html-italic">V</span> is the voltage signal applied to the cell, upstream of the matching network, while <span class="html-italic">V</span><sub>e</sub> and <span class="html-italic">I</span><sub>e</sub> are the voltage and current measured between the electrodes. <span class="html-italic">L</span>, <span class="html-italic">L</span><sub>e</sub>, and <span class="html-italic">C</span><sub>s</sub> are the inductors and the capacitor included in the matching network. Reprinted from [<a href="#B11-plasma-07-00029" class="html-bibr">11</a>], with permission of AIP Publishing.</p>
Full article ">Figure 3
<p>Dependence of the electrode current on the electrode voltage in GEC reference cells manufactured in different laboratories. The solid line is a linear fit to the data, while the dot-dash line represents the one-sigma standard deviation from the fitted line. Reprinted from [<a href="#B11-plasma-07-00029" class="html-bibr">11</a>], with permission of AIP Publishing.</p>
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<p>Plot representing the average (crosses) and instantaneous (continuous lines) current as a function of voltage (<b>a</b>). The instantaneous current is measured at the time of minimum (<span class="html-italic">V</span><sub>pmin</sub>) and maximum (<span class="html-italic">V</span><sub>pmax</sub>) bias voltage. Plot of the typical scope trace of instantaneous current (<b>b</b>), where <span class="html-italic">I</span><sub>A</sub> occurs at <span class="html-italic">V</span><sub>pmin</sub> and <span class="html-italic">I</span><sub>B</sub> occurs at <span class="html-italic">V</span><sub>pmax</sub> for an applied bias voltage <span class="html-italic">V</span><sub>b</sub>. Reprinted with permission from [<a href="#B12-plasma-07-00029" class="html-bibr">12</a>]. Copyright 1989, American Vacuum Society.</p>
Full article ">Figure 5
<p>Time evolution of the voltage measured over the sheaths at the grounded (◼) and powered (●) electrodes in a GEC He discharge at a pressure of 50 Pa, a gas flow rate of 90 sccm, and a peak-to-peak bias voltage of 700 V. The solid lines are sinusoidal fits. © IOP Publishing. Reproduced with permission from [<a href="#B14-plasma-07-00029" class="html-bibr">14</a>]. All rights reserved.</p>
Full article ">Figure 6
<p>Time and space resolved excitation rate to the <span class="html-italic">n</span> = 3 state of atomic hydrogen (<b>upper graph</b>) and time evolution of the sheath voltage at the powered electrode (<b>lower graph</b>) in a GEC H<sub>2</sub> discharge at a pressure of 80 Pa, a gas flow rate of 90 sccm, and a peak-to-peak bias voltage of 650 V. © IOP Publishing. Reproduced with permission from [<a href="#B14-plasma-07-00029" class="html-bibr">14</a>]. All rights reserved.</p>
Full article ">Figure 7
<p>Time evolution of the rotational temperature of hydrogen molecules in a GEC H<sub>2</sub> discharge at a pressure of 42 Pa, gas flow rate of 50 sccm, and an RF power of 100 W. The thick solid line represents the result from a mathematical model. © IOP Publishing. Reproduced with permission from [<a href="#B16-plasma-07-00029" class="html-bibr">16</a>]. All rights reserved.</p>
Full article ">Figure 8
<p>Plasma parameters as a function of time and space in a CF<sub>4</sub> discharge working at 40 Pa. In the first row, ionization rates from PIC-MCC simulations are reported in unit of 10<sup>21</sup> m<sup>−3</sup> s<sup>−1</sup> for 100 V (<b>a</b>) and 400 V (<b>b</b>) peak bias voltages, while in the bottom row the measured plasma emission at 250 nm is reported in arbitrary units for 100 V (<b>c</b>) and 400 V (<b>d</b>) peak bias voltages. Reprinted with permission from [<a href="#B17-plasma-07-00029" class="html-bibr">17</a>]. Copyright (2011) by the American Physical Society.</p>
Full article ">Figure 9
<p>Plasma parameters as a function of time and space in a CF<sub>4</sub> discharge working at 200 V peak bias voltage. In the first row, ionization rates from PIC-MCC simulations are reported in units of 10<sup>21</sup> m<sup>−3</sup> s<sup>−1</sup> for pressure of 40 Pa (<b>a</b>) and 80 Pa (<b>b</b>), while in the bottom row the measured plasma emission at 250 nm is reported in arbitrary units for pressure of 40 Pa (<b>c</b>) and 80 Pa (<b>d</b>). Reprinted with permission from [<a href="#B17-plasma-07-00029" class="html-bibr">17</a>]. Copyright (2011) by the American Physical Society.</p>
Full article ">Figure 10
<p>Time-resolved excitation rate near the structured powered electrode in a Ne discharge working at 10 Pa and 264 V peak RF amplitude, with electrode structures. The first row shows the time evolution of the RF bias on the electrode. © IOP Publishing. Reproduced with permission from [<a href="#B18-plasma-07-00029" class="html-bibr">18</a>]. All rights reserved.</p>
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<p>Time evolution of the electron density, shown in a semi-logarithmic scale at some radial positions during the first 120 RF cycles of an Ar RF-CCP discharge. The vertical lines in the graph show some specific RF cycles, <span class="html-italic">T</span><sub>N</sub> = 56, 62, 70, and 100. Reproduced from [<a href="#B19-plasma-07-00029" class="html-bibr">19</a>] by permission of IOP Publishing Ltd. All rights reserved.</p>
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<p>Time evolution of the optical emission intensity at 750.4 nm at some radial positions during the first 120 RF cycles of an Ar RF-CCP discharge. The vertical lines in the graph show some specific RF cycles, <span class="html-italic">T</span><sub>N</sub> = 56, 62, 70, and 100. Reproduced from [<a href="#B19-plasma-07-00029" class="html-bibr">19</a>] by permission of IOP Publishing Ltd. All rights reserved.</p>
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<p>Electrical characterization of a CEG reference cell working with Ar at 500 mtorr and 20 sccm, powered by a pulsed RF signal (pulse frequency 500 Hz). Voltage between the electrodes (◼) and current flowing in the plasma (●) measured as a function of time during the turn-on (<b>a</b>) and turn-off (<b>b</b>) phases of a pulsed discharge. Power absorbed in the discharge as a function of time during the turn-on (<b>c</b>) and turn-off (<b>d</b>) phases of a pulse. © IOP Publishing. Reproduced with permission from [<a href="#B20-plasma-07-00029" class="html-bibr">20</a>]. All rights reserved.</p>
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<p>Estimated electron collision frequency as a function of time during the turn-on of a pulse in a CEG reference cell working with Ar at 500 mtorr and 20 sccm, powered by a pulsed RF signal (pulse frequency 500 Hz). © IOP Publishing. Reproduced with permission from [<a href="#B20-plasma-07-00029" class="html-bibr">20</a>]. All rights reserved.</p>
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<p>Normalized electron density measured by means of MWI in He (circles) and Ar (continuous line) discharges working at 300 and 100 mtorr, respectively, measured by means of MWI during a pulse of 50 ms total duration (turn-on plus turn-off phase). © IOP Publishing. Reproduced with permission from [<a href="#B21-plasma-07-00029" class="html-bibr">21</a>]. All rights reserved.</p>
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<p>Electron density (shown as circles in the upper graph) and electron temperature (shown as circles in the lower graphs) measured by a Langmuir probe, and electron density measured by MWI (shown as continuous lines in the upper graphs) as a function of time. The values are measured in a He discharge at 500 mTorr, 30 sccm and 200 V RF amplitude (<b>a</b>), and an Ar discharge at 100 mTorr, 20 sccm and 200 V RF amplitude (<b>b</b>), during a pulse of 2 ms total duration (turn-on plus turn-off phase). © IOP Publishing. Reproduced with permission from [<a href="#B21-plasma-07-00029" class="html-bibr">21</a>]. All rights reserved.</p>
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<p>Light emission intensity (dashed line, scale on the left) and electron density (continuous line, scale on the right) measured in a pulsed GEC cell working at 27 Pa and 50 W in Ar. The light emission intensity is normalized to a non-pulsed discharge. © IOP Publishing. Reproduced with permission from [<a href="#B22-plasma-07-00029" class="html-bibr">22</a>]. All rights reserved.</p>
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<p>Electron density (<b>b</b>) and light emission intensity (<b>c</b>) in an GEC cell working at 27 Pa and 50 W in Ar and pulsed with a rectangular signal (dashed lines) and a signal shaped as shown in (<b>a</b>) (continuous line). The light emission intensity is normalized to a non-pulsed discharge. © IOP Publishing. Reproduced with permission from [<a href="#B22-plasma-07-00029" class="html-bibr">22</a>]. All rights reserved.</p>
Full article ">Figure 19
<p>Electron density (<b>b</b>) and light emission intensity (<b>c</b>) an Ar GEC cell working at 27 Pa and 50 W and pulsed with a rectangular signal (dashed lines) and a signal shaped as shown in (<b>a</b>) (continuous line). The light emission intensity is normalized to a non-pulsed discharge. © IOP Publishing. Reproduced with permission from [<a href="#B22-plasma-07-00029" class="html-bibr">22</a>]. All rights reserved.</p>
Full article ">Figure 20
<p>Total light emission forms a pulsed RF (13.56 MHz) CCP discharge in Ar during the ignition step of a pulse. In the different plots the results are show for the variation of a different parameter: (<b>a</b>) fixed pressure and inter-electrode distance, while varying the applied power; (<b>b</b>) fixed power and inter-electrode distance, while varying the pressure; (<b>c</b>) fixed pressure and power, while varying the inter-electrode distance. © The Japan Society of Applied Physics. Reproduced from [<a href="#B23-plasma-07-00029" class="html-bibr">23</a>] by permission of IOP Publishing Ltd. All rights reserved.</p>
Full article ">Figure 21
<p>Excitation rate, measured at different times and distances from the powered electrode (at 0 mm) during the re-ignition of an Ar CCP discharge pulsed by a 10 kHz wave. Each plot shows two rf periods (150 ns) at the following times: (<b>a</b>) 2 μs, (<b>b</b>) 4 μs, (<b>c</b>) 10 μs, and (<b>d</b>) 50 μs, after the re-ignition start. Each plot is normalized to the value reported in the plot title. Reprinted with permission from [<a href="#B24-plasma-07-00029" class="html-bibr">24</a>]. Copyright 2020, American Vacuum Society.</p>
Full article ">Figure 22
<p>Excitation rate, measured at different times and distances from the powered electrode (at 0 mm) during the re-ignition of an Ar CCP discharge pulsed by a 0.1 kHz wave. Each plot shows two rf periods (150 ns) at the following times: (<b>a</b>) 2 μs, (<b>b</b>) 4 μs, (<b>c</b>) 10 μs, and (<b>d</b>) 50 μs, after the re-ignition start. Each plot is normalized to the value reported in the plot title. Reprinted with permission from [<a href="#B24-plasma-07-00029" class="html-bibr">24</a>]. Copyright 2020, American Vacuum Society.</p>
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<p>Voltage amplitudes as a function of time in a pulsed RF discharge in Ar working at 60 Pa, for value of the pulse <span class="html-italic">T</span><sub>ON</sub> fixed at 200 µs and different values of the pulse <span class="html-italic">T</span><sub>OFF</sub>. The vertical dashed lines indicate the times when the next pulse is turned on. Conditions: RF = 12.5 MHz, steady-state rf amplitude <span class="html-italic">V</span><sub>steady</sub> = 150 V, <span class="html-italic">T</span><sub>ON</sub> = 200 μs, <span class="html-italic">p</span> = 450 mTorr, and <span class="html-italic">L</span> = 2.5 cm. Reprinted from [<a href="#B25-plasma-07-00029" class="html-bibr">25</a>] under the terms of Creative Commons Attribution 4.0 license.</p>
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<p>Time evolution of the electron density (<b>a</b>,<b>b</b>) and optical emission intensity (<b>c</b>,<b>d</b>) as a function of rf period number <span class="html-italic">T</span><sub>N</sub>, since the beginning of the pulses. <span class="html-italic">T</span><sub>N</sub> = <span class="html-italic">t</span>/<span class="html-italic">T<sub>RF</sub></span>, where <span class="html-italic">T<sub>RF</sub></span> is the duration of one RF period. The labels of the curves specify the <span class="html-italic">T</span><sub>OFF</sub> value. Reprinted from [<a href="#B25-plasma-07-00029" class="html-bibr">25</a>] under the terms of Creative Commons Attribution 4.0 license.</p>
Full article ">Figure 25
<p>Two different types of step-like amplitude modulation signals used to pulse an RF discharge: (<b>a</b>) <span class="html-italic">step-up</span> pulse and (<b>b</b>) <span class="html-italic">step-down</span> pulse. © IOP Publishing. Reproduced from [<a href="#B26-plasma-07-00029" class="html-bibr">26</a>] with permission. All rights reserved.</p>
Full article ">Figure 26
<p>Time evolution of the electron density in an RF-CCP Ar discharge working at 60 Pa, pulsed by means of the (<b>a</b>) <span class="html-italic">step-up</span> and (<b>b</b>) <span class="html-italic">step-down</span> pulse types shown in <a href="#plasma-07-00029-f025" class="html-fig">Figure 25</a>a and <a href="#plasma-07-00029-f025" class="html-fig">Figure 25</a>b respectively. The percentage values near the curves represent the values of the voltage ratio voltage ratio ζ = <span class="html-italic">V</span><sub>L</sub>/<span class="html-italic">V</span><sub>H</sub>. © IOP Publishing. Reproduced from [<a href="#B26-plasma-07-00029" class="html-bibr">26</a>] with permission. All rights reserved.</p>
Full article ">Figure 27
<p>Time evolution of the density of several neutral species in an Ar+C<sub>2</sub>H<sub>2</sub> RF pulsed discharge, obtained by a 0D kinetic simulation based on the experimental data obtained by (<b>a</b>) a mass spectrometer and (<b>b</b>) a plasma process monitor. © IOP Publishing. Reproduced from [<a href="#B27-plasma-07-00029" class="html-bibr">27</a>] with permission. All rights reserved.</p>
Full article ">Figure 28
<p>Time evolution of the density of several cations in an Ar+C<sub>2</sub>H<sub>2</sub> RF pulsed discharge, obtained by a 0D kinetic simulation based on the experimental data obtained by a plasma process monitor. © IOP Publishing. Reproduced from [<a href="#B27-plasma-07-00029" class="html-bibr">27</a>] with permission. All rights reserved.</p>
Full article ">Figure 29
<p>Time evolution of the density of several anions species in Ar+C<sub>2</sub>H<sub>2</sub> RF pulsed discharge, obtained by a 0D kinetic simulation based on the experimental data obtained by a plasma process monitor. © IOP Publishing. Reproduced from [<a href="#B27-plasma-07-00029" class="html-bibr">27</a>] with permission. All rights reserved.</p>
Full article ">Figure 30
<p>Time evolution of the density of Ar<sup>+</sup> and other anions in pulsed double-frequency RF discharges composed by (<b>a</b>) Ar only and (<b>b</b>) an Ar+C<sub>4</sub>F<sub>8</sub>+O<sub>2</sub> gas mixture. © The Japan Society of Applied Physics. Reproduced from [<a href="#B28-plasma-07-00029" class="html-bibr">28</a>] by permission of IOP Publishing Ltd. All rights reserved.</p>
Full article ">Figure 31
<p>Time evolution of the electron density (in red, right scale) and Ar density normalized to the electron density (in blue, left scale) in a pulsed double-frequency RF discharges composed by an Ar + C<sub>4</sub>F<sub>8</sub> + O<sub>2</sub> gas mixture. © The Japan Society of Applied Physics. Reproduced from [<a href="#B28-plasma-07-00029" class="html-bibr">28</a>] by permission of IOP Publishing Ltd. All rights reserved.</p>
Full article ">Figure 32
<p>(<b>a</b>) Emission intensity of the Hα line, as a function of time and vertical position, in an H<sub>2</sub> discharge working at 100 Pa without plasmoids, near a grid positioned parallel to the electrodes. The dashed arrows, marked I and II, show the expected direction of electron flows. (<b>b</b>) Voltage on the rf electrode. The color scale is logarithmic. © IOP Publishing. Reproduced with permission from [<a href="#B29-plasma-07-00029" class="html-bibr">29</a>]. All rights reserved.</p>
Full article ">Figure 33
<p>(<b>a</b>) Emission intensity of the Hα line, as a function of time and vertical position, in a H<sub>2</sub> discharge working at 100 Pa with a plasmoid, near a grid positioned parallel to the electrodes. The dashed arrows, marked I and II, show the expected direction of electron flows. (<b>b</b>) Voltage on the rf electrode. The color scale is logarithmic. © IOP Publishing. Reproduced with permission from [<a href="#B29-plasma-07-00029" class="html-bibr">29</a>]. All rights reserved.</p>
Full article ">Figure 34
<p>Floating potential, measured during the ignition of a micro-arc discharge, near the oil-coated surface of the grounded electrode, in an RF-CCP discharge in Ar at 6.66 Pa and 50 W of applied RF power. Reprinted from [<a href="#B30-plasma-07-00029" class="html-bibr">30</a>], Copyright (2015), with permission from Elsevier.</p>
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<p>Electron density in a plasma discharge in Ar and C<sub>2</sub>H<sub>2</sub> measured during two consecutive cycles of dust formation. The letters in the graph refer to different stages of the cycle: (a) t = 0 min plasma ignition in pure argon, (b) t = 1.1 min injection of acetylene, (c) t = 1.7 min starting of dust formation, (d) t = 3.9 min maximum plasma emission in the discharge, (e) t = 15.7 min, (f) t = 21.7 min, (g) t = 26.65 min, (h) t = 27.08 min particle expulsion from the plasma region, (i) t = 27.3 min starting of a new particle growth cycle. © IOP Publishing. Reproduced with permission from [<a href="#B31-plasma-07-00029" class="html-bibr">31</a>]. All rights reserved.</p>
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<p>(<b>a</b>) Density of metastable excited Ar atoms and (<b>b</b>) electron density, measured as a function of time in a pulsed plasma discharge in Ar and C<sub>2</sub>H<sub>2</sub> at 0.1 mbar and 40 W. Different gas mixtures are represented by different symbols on the graph: solid green triangles for pure Ar, black crosses for Ar + C<sub>2</sub>H<sub>2</sub>, solid red line for Ar + C<sub>2</sub>H<sub>2</sub> with dust, and blue dotted line for Ar with dust. © IOP Publishing. Reproduced with permission from [<a href="#B31-plasma-07-00029" class="html-bibr">31</a>]. All rights reserved.</p>
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<p>Forward, reflected, and net power (<b>a</b>); electron density and temperature (<b>b</b>); and light emission intensity at 415.9 nm (<b>c</b>) and at 431,4 nm (<b>d</b>) as a function of time after the injection of hexane gas in an Ar discharge. Reproduced with permission from [<a href="#B32-plasma-07-00029" class="html-bibr">32</a>]. All rights reserved.</p>
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21 pages, 6113 KiB  
Article
Exploring Heterointerface Characteristics and Charge-Storage Dynamics in ALD-Developed Ultra-Thin TiO2-In2O3/Au Heterojunctions
by Mohammad Karbalaei Akbari, Nasrin Siraj Lopa and Serge Zhuiykov
Coatings 2024, 14(7), 880; https://doi.org/10.3390/coatings14070880 - 14 Jul 2024
Viewed by 649
Abstract
Directional ionic migration in ultra-thin metal-oxide semiconductors under applied electric fields is a key mechanism for developing various electronic nanodevices. However, understanding charge transfer dynamics is challenging due to rapid ionic migration and uncontrolled charge transfer, which can reduce the functionality of microelectronic [...] Read more.
Directional ionic migration in ultra-thin metal-oxide semiconductors under applied electric fields is a key mechanism for developing various electronic nanodevices. However, understanding charge transfer dynamics is challenging due to rapid ionic migration and uncontrolled charge transfer, which can reduce the functionality of microelectronic devices. This research investigates the supercapacitive-coupled memristive characteristics of ultra-thin heterostructured metal-oxide semiconductor films at TiO2-In2O3/Au Schottky junctions. Using atomic layer deposition (ALD), we nano-engineered In2O3/Au-based metal/semiconductor heterointerfaces. TEM studies followed by XPS elemental analysis revealed the chemical and structural characteristics of the heterointerfaces. Subsequent AFM studies of the hybrid heterointerfaces demonstrated supercapacitor-like behavior in nanometer-thick TiO2-In2O3/Au junctions, resembling ultra-thin supercapacitors, pseudocapacitors, and nanobatteries. The highest specific capacitance of 2.6 × 104 F.g−1 was measured in the TiO2-In2O3/Au junctions with an amorphous In2O3 electron gate. Additionally, we examined the impact of crystallization, finding that thermal annealing led to the formation of crystalline In2O3 films with higher oxygen vacancy content at TiO2-In2O3 heterointerfaces. This crystallization process resulted in the evolution of non-zero I-V hysteresis loops into zero I-V hysteresis loops with supercapacitive-coupled memristive characteristics. This research provides a platform for understanding and designing adjustable ultra-thin Schottky junctions with versatile electronic properties. Full article
(This article belongs to the Special Issue Advanced Films and Coatings Based on Atomic Layer Deposition)
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Figure 1

Figure 1
<p>(<b>a</b>) Illustrates the atomic-scale graphical representation of the TiO<sub>2</sub>- In<sub>2</sub>O<sub>3</sub>/Au heterostructure; (<b>b</b>) the atomic-scale graphical depiction of polyhedral In-O-In bonds within the amorphous In<sub>2</sub>O<sub>3</sub> structure. Additionally, it presents the O 1s XPS spectra of (<b>c</b>) as-deposited In<sub>2</sub>O<sub>3</sub>; (<b>d</b>) the annealed In<sub>2</sub>O<sub>3</sub>; (<b>e</b>) the as-deposited TiO<sub>2</sub>-In<sub>2</sub>O<sub>3</sub>; and (<b>f</b>) In<sub>2</sub>O<sub>3</sub> (annealed)-TiO<sub>2</sub> films. (<b>g</b>) The Au 4f XPS spectra of In<sub>2</sub>O<sub>3</sub>/Au heterointerfaces, before and after thermal annealing.</p>
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<p>The HR-TEM images and chemical analysis of the heterointerface characteristics: (<b>a</b>) The low-magnification and (<b>b</b>) high-magnification cross-sectional TEM image and SAED pattern from the TiO<sub>2</sub>-In<sub>2</sub>O<sub>3</sub> (α) heterointerfaces; (<b>c</b>) high-magnification cross-sectional TEM image and SAED pattern from the TiO<sub>2</sub>-In<sub>2</sub>O<sub>3</sub> (c) heterointerfaces; (<b>d</b>) the EDS map elemental analysis accompanied by the (<b>e</b>) EDS line elemental analysis of the TiO<sub>2</sub>-In<sub>2</sub>O<sub>3</sub> heterointerfaces; (<b>f</b>) the Raman spectra of In<sub>2</sub>O<sub>3</sub> films before and after thermal annealing. (<b>g</b>) The XRD pattern of as-deposited amorphous In<sub>2</sub>O<sub>3</sub> film. (<b>h</b>) The XRD pattern of annealed crystalline In<sub>2</sub>O<sub>3</sub> film.</p>
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<p>The XPS spectra of Ti 2p and In 3d of as-deposited TiO<sub>2</sub>-In<sub>2</sub>O<sub>3</sub> (<b>a</b>) at surface and at (<b>b</b>) heterointerfaces. (<b>c</b>) The VBM of as-deposited and amorphous In<sub>2</sub>O<sub>3</sub> film. (<b>d</b>) The XPS spectra of Ti 2p and In 3d of annealed TiO<sub>2</sub>-In<sub>2</sub>O<sub>3</sub> films (<b>d</b>) at surface and at (<b>e</b>) heterointerfaces. (<b>f</b>) The VBM of as-deposited and amorphous TiO<sub>2</sub>-In<sub>2</sub>O<sub>3</sub> film.</p>
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<p>(<b>a</b>) The graphical scheme, depicting the charge distribution in heterostructured films when the tip is in negative voltage and (<b>b</b>) the corresponding current map of the 500 nm<sup>2</sup> of heterostructured films. (<b>c</b>) The graphical scheme, depicting the charge distribution in heterostructured film when the tip is in positive voltage and (<b>d</b>) the corresponding current map of the 500 nm<sup>2</sup> of heterostructured films. (<b>e</b>) The I-V hysteresis graphs of the AFM tip/TiO<sub>2</sub>-In<sub>2</sub>O<sub>3</sub> (α)/Au heterojunctions at different applied voltages. (<b>f</b>) The variation of specific capacitance of the same heterojunction vs. current density.</p>
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<p>(<b>a</b>) The I-V cyclic curves of c-AFM Pt-coated tip/In<sub>2</sub>O<sub>3</sub> (α)/Au heterojunctions. (<b>b</b>) The variation of contact resistance of c-AFM Pt tip/In<sub>2</sub>O<sub>3</sub> (α)/Au heterojunctions at various I-V cyclic measurements. (<b>c</b>) The cyclic 1st I-V curve of In<sub>2</sub>O<sub>3</sub> (<b>d</b>) within ±1 V and (<b>f</b>) ±10 V. (<b>e</b>–<b>i</b>) The I-V hysteresis of the TiO<sub>2</sub>-In<sub>2</sub>O<sub>3</sub> (c) gate at various cycles, depicting the transformation from non-zero I-V hysteresis in nanobatteries (1st and 25th cycles) to pseudocapacitors (50th cycle) and finally memristors (85th and 100th cycles). (<b>j</b>) The variation of HRS to LRS ratio vs. the applied voltage. (<b>k</b>) The 3D current map the TiO<sub>2</sub>-In<sub>2</sub>O<sub>3</sub> (c) heterostructured thin film, investigated at various constant applied voltages.</p>
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<p>(<b>a</b>) The schematic of energy band alignment diagram of the Pt/TiO<sub>2</sub>-In<sub>2</sub>O<sub>3</sub> (c)/Au heterojunction at 0.0 applied voltage. (<b>b</b>) The illustration of charge trapping and detrapping process when a positive bias voltage is applied on an Au electrode. The trapped electrons are released and transmitted to Au electrodes, and (<b>c</b>) LRS is achieved. (<b>d</b>) The schematic of energy band alignment at Pt/TiO<sub>2</sub>-In<sub>2</sub>O<sub>3</sub> (c)/Au heterojunctions when the positive voltage is applied on Pt electrode and (<b>e</b>) the corresponding mechanisms of charge transfer at In<sub>2</sub>O<sub>3</sub> (c)/Au and Pt/TiO<sub>2</sub> heterointerfaces.</p>
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<p>The 3D AFM surface morphology of In<sub>2</sub>O<sub>3</sub> films (<b>a</b>) before and (<b>b</b>) after thermal annealing.</p>
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<p>The corresponding line profile of the filamentary currents formed in the heterostructured oxide during the generation of current map of surface.</p>
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<p>The UV–Vis spectra and bandgap of TiO<sub>2</sub>-In<sub>2</sub>O<sub>3</sub> (c) heterostructure.</p>
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<p>XPS peak parameters for calculation of energy band alignment at In<sub>2</sub>O<sub>3</sub> (c)-TiO<sub>2</sub> heterostructure. (<b>a</b>) The In3d of In<sub>2</sub>O<sub>3</sub> (c), (<b>b</b>) VBM of In<sub>2</sub>O<sub>3</sub> (c) and In<sub>2</sub>O<sub>3</sub> (α), (<b>c</b>) The XPS characteristics of TiO<sub>2</sub>. (<b>d</b>) The Ti2p and In3d peaks of In<sub>2</sub>O<sub>3</sub> (c)-TiO<sub>2</sub> heterostructure.</p>
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14 pages, 7409 KiB  
Article
A 1.87 µW Capacitively Coupled Chopper Instrumentation Amplifier with a 0.36 mV Output Ripple and a 1.8 GΩ Input Impedance for Biomedical Recording
by Xuan Phuong Tran, Xuan Thuc Kieu, Xuan Thanh Pham, Duy Phong Pham and Manh Kha Hoang
J. Low Power Electron. Appl. 2024, 14(3), 37; https://doi.org/10.3390/jlpea14030037 - 10 Jul 2024
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Abstract
Chopper and capacitively coupled techniques are employed in instrumentation amplifiers to create capacitively coupled chopper instrumentation amplifiers (CCIAs) that obtain a high noise power efficiency. However, the CCIA has some disadvantages due to the chopper technique, namely chopper ripple and a low input [...] Read more.
Chopper and capacitively coupled techniques are employed in instrumentation amplifiers to create capacitively coupled chopper instrumentation amplifiers (CCIAs) that obtain a high noise power efficiency. However, the CCIA has some disadvantages due to the chopper technique, namely chopper ripple and a low input impedance. The amplifier can easily saturate due to the chopper ripple of the CCIA, especially in extremely low noise problems. Therefore, ripple attenuation is required when designing CCIAs. To record biomedical information, a CCIA with a low power consumption and a low noise, low output ripple, and high input impedance (Zin) is presented in this paper. By introducing a ripple attenuation loop (RAL) including the chopping offset amplifier and a low pass filter, the chopping ripple can be reduced to 0.36 mV. To increase the Zin of the CCIA up to 1.8 GΩ, an impedance boost loop (IBL) is added. By using 180 nm CMOS technology, the 0.123 mm2 CCIA consumes 1.87 µW at a supply voltage of 1 V. According to the simulation results using Cadance, the proposed CCIA architecture achieves a noise floor of 136 nV/√Hz, an input-referred noise (IRN) of 2.16 µVrms, a closed-loop gain of 40 dB, a power supply rejection ratio (PSRR) of 108.6 dB, and a common-mode rejection ratio (CMRR) of 118.7 dB. The proposed CCIA is a helpful method for monitoring neural potentials. Full article
(This article belongs to the Special Issue Ultra-Low-Power ICs for the Internet of Things Vol. 2)
Show Figures

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<p>System architecture of a typical wireless sensor biomedical system.</p>
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<p>The schematic of the proposed CCIA with the spectrum of signal corresponding to each node.</p>
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<p>Schematics of the IBL and time diagram of the CCIA.</p>
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<p>Schematic of the two-folded cascode opamp <span class="html-italic">G</span><sub>m1</sub> with table sizing of CMOS transistors.</p>
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<p>Schematic of the chopper two-stage amplifier with table sizing of CMOS transistors.</p>
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<p>Monte Carlo simulation results for (<b>a</b>) DC gain, and (<b>b</b>) cut-off frequency of <span class="html-italic">G</span><sub>m2</sub>.</p>
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<p>The schematic of the circuit in IBL with table sizing of the CMOS transistors.</p>
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<p>Schematic of a signal control generator for IBL.</p>
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<p>The relation between input impedance and noise to (<b>a</b>) the pre-charge time, and (<b>b</b>) the switches sizing.</p>
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<p>The layout of the proposed CCIA.</p>
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<p>(<b>a</b>) The transient of the proposed CCIA’s transfer function; (<b>b</b>) MCS result of the proposed CCIA’s transfer function.</p>
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<p>The MCS results of (<b>a</b>) PSRR; (<b>b</b>) CMRR.</p>
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<p>The simulated results of the voltage spectrum and MCS of the output ripple when RAL (<b>a</b>,<b>c</b>) is disabled, or (<b>b</b>,<b>d</b>) enabled.</p>
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<p>The MCS of the ripple attenuation result.</p>
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<p>The simulated results of (<b>a</b>) the CCIA’s input impedance; (<b>b</b>) the CCIA’s noise.</p>
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<p>The simulated result of (<b>a</b>) the CCIA’s noise across several the process corners and (<b>b</b>) the CCIA’s noise.</p>
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