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Keywords = capacitive coupled plasma-assistant magnetron sputtering

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9 pages, 3131 KiB  
Article
Improved-Performance Amorphous Ga2O3 Photodetectors Fabricated by Capacitive Coupled Plasma-Assistant Magnetron Sputtering
by Yiming Liu, Chong Peng, Chang Liu, Cong Yu, Jiarui Guo, Yiyang Chang and Yi Zhao
Coatings 2024, 14(9), 1204; https://doi.org/10.3390/coatings14091204 - 19 Sep 2024
Viewed by 435
Abstract
Ga2O3 has received increasing interest for its potential in various applications relating to solar-blind photodetectors. However, attaining a balanced performance with Ga2O3-based photodetectors presents a challenge due to the intrinsic conductive mechanism of Ga2O [...] Read more.
Ga2O3 has received increasing interest for its potential in various applications relating to solar-blind photodetectors. However, attaining a balanced performance with Ga2O3-based photodetectors presents a challenge due to the intrinsic conductive mechanism of Ga2O3 films. In this work, we fabricated amorphous Ga2O3 (a-Ga2O3) metal–semiconductor–metal photodetectors through capacitive coupled plasma assisted magnetron sputtering at room temperature. Substantial enhancement in the responsivity is attained by regulating the capacitance-coupled plasma power during the deposition of a-Ga2O3. The proposed plasma energy generated by capacitive coupled plasma (CCP) effectively improved the disorder of amorphous Ga2O3 films. The results of X-ray photoelectron spectroscopy (XPS) and current-voltage tests demonstrate that the additional plasma introduced during the sputtering effectively adjust the concentration of oxygen vacancy effectively, exhibiting a trade-off effect on the performance of a-Ga2O3 photodetectors. The best overall performance of a-Ga2O3 photodetectors exhibits a high responsivity of 30.59 A/W, a low dark current of 4.18 × 10−11, and a decay time of 0.12 s. Our results demonstrate that the introduction of capacitive coupled plasma during deposition could be a potential approach for modifying the performance of photodetectors. Full article
(This article belongs to the Collection Feature Paper Collection in Thin Films)
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Figure 1

Figure 1
<p>(<b>a</b>) Schematic of Ga<sub>2</sub>O<sub>3</sub> MSM photodetector. (<b>b</b>) The microscopy image of the Ga<sub>2</sub>O<sub>3</sub> photodetectors (<b>c</b>) Schematic of CCP-assistant magnetron sputtering system.</p> Full article ">Figure 2
<p>(<b>a</b>) XRD patterns of S0–S60 as well as c-sapphire substrate. (<b>b</b>) AFM topographies of a-Ga<sub>2</sub>O<sub>3</sub> under different RF-bias powers.</p> Full article ">Figure 3
<p>(<b>a</b>) Transmission spectra, (<b>b</b>) plots of (αhν)<sup>2</sup> versus hν, (<b>c</b>) E<sub>g</sub> and E<sub>u</sub> of Ga<sub>2</sub>O<sub>3</sub> films deposited on c-plane sapphire substrate under different RF-bias powers.</p> Full article ">Figure 4
<p>I-V characteristics in log coordinates of S0–S60 (<b>a</b>) in the dark and (<b>b</b>) illuminated with 254 nm UV light. (<b>c</b>) I<sub>photo</sub>/I<sub>dark</sub>, responsivity, and detectivity plotted as functions of RF-bias power. (<b>d</b>) Normalized spectral response of S0–S60 under 20 V bias.</p> Full article ">Figure 5
<p>(<b>a</b>) O 1 s and (<b>b</b>) Ga 2p<sub>3/2</sub> core-level spectra of amorphous Ga<sub>2</sub>O<sub>3</sub> films deposited under different RF-bias powers.</p> Full article ">Figure 6
<p>(<b>a</b>) Normalized transient response of S0–S60 photodetectors in one single cycle. (<b>b</b>) Transient response of S0–S60 photodetectors with repetition test.</p> Full article ">
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