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Prediction of DC-AC Converter Efficiency Degradation due to Device Aging Using a Compact MOSFET-Aging Model Kenshiro SATO Dondee NAVARRO Shinya SEKIZAKI Yoshifumi ZOKA Naoto YORINO Hans Jürgen MATTAUSCH Mitiko MIURA-MATTAUSCH Publication IEICE TRANSACTIONS on Electronics Vol.E103-C No.3 pp.119-126 Publication Date: 2020/03/01 Publicized: 2019/09/02 Online ISSN: 1745-1353 DOI: 10.1587/transele.2019ECP5010 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: compact model, DC-AC converter, device aging, efficiency, SiC-MOSFET, Full Text: PDF(1.8MB)>>
Summary: The degradation of a SiC-MOSFET-based DC-AC converter-circuit efficiency due to aging of the electrically active devices is investigated. The newly developed compact aging model HiSIM_HSiC for high-voltage SiC-MOSFETs is used in the investigation. The model considers explicitly the carrier-trap-density increase in the solution of the Poisson equation. Measured converter characteristics during a 3-phase line-to-ground (3LG) fault is correctly reproduced by the model. It is verified that the MOSFETs experience additional stress due to the high biases occurring during the fault event, which translates to severe MOSFET aging. Simulation results predict a 0.5% reduction of converter efficiency due to a single 70ms-3LG, which is equivalent to a year of operation under normal conditions, where no additional stress is applied. With the developed compact model, prediction of the efficiency degradation of the converter circuit under prolonged stress, for which measurements are difficult to obtain and typically not available, is also feasible. | |||||
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