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SOI CMOS Voltage Multiplier Circuits with Body Bias Control Technique for Battery-Less Wireless Sensor System Yasushi IGARASHI Tadashi CHIBA Shin-ichi O'UCHI Meishoku MASAHARA Kunihiro SAKAMOTO Publication IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Vol.E97-A No.3 pp.741-748 Publication Date: 2014/03/01 Online ISSN: 1745-1337 DOI: 10.1587/transfun.E97.A.741 Print ISSN: 0916-8508 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics) Category: Keyword: voltage multiplier, RF-to-DC converter, SOI MOSFET, self-control of body bias, Full Text: PDF(3.6MB)>>
Summary: Voltage multiplier (VM) circuits for RF (2.45GHz)-to-DC conversion are developed for battery-less sensor nodes. Converted DC power is charged on a storage capacitor before driving a wireless sensor module. A charging time of the storage capacitor of the proposed VM circuits is reduced 1/10 of the conventional VM circuits, because they have constant current characteristics owing to self-control of body bias in diode-connected SOI MOSFETs. The wireless sensor system composed of the fabricated VM chip and a commercially available sensor module is operated using an RF signal of a wireless LAN modem (2.45GHz) as a power source. | ||||||||||
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