Summary
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New Multiple-Times Programmable CMOS ROM Cell In-Young CHUNG Seong Yeol JEONG Sung Min SEO Myungjin LEE Taesu JANG Seon-Yong CHA Young June PARK Publication IEICE TRANSACTIONS on Electronics Vol.E95-C No.6 pp.1098-1103 Publication Date: 2012/06/01 Online ISSN: 1745-1353 DOI: 10.1587/transele.E95.C.1098 Print ISSN: 0916-8516 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: CMOS memory, ROM, FN stress, nonvolatile memory, Full Text: PDF(1.9MB)>>
Summary: New concept of CMOS nonvolatile memory is presented with demonstration of cell implementations. The memory cell, which is a comparator basically, makes use of comparator offset for storage quantity and the FN stress phenomena for cell programming. We also propose the stress-packet operation which is the relevant programming method to finely control the offset of the memory cell. The memory cell is multiple-time programmable while it is implemented in a standard CMOS process. We fabricated the memory cell arrays of the latch comparator and demonstrated that it is rewritten several times. We also investigated the reliability of cell data retention by monitoring programmed offsets for several months. | |||||
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