High power AlGaN/GaN HEMTs on free-standing GaN substrates with excellent stability have
been demonstrated for the first time. When operated at a drain bias of 50V, devices without …

In this letter, high power density AlGaN/GaN high electron-mobility transistors (HEMTs) on a
freestanding GaN substrate are reported. An asymmetric Γ-shaped 500-nm gate with a field …

2: 20-2: 40 NUMERICAL INVESTIGATION OF THE EFFECT OF DOPING PROFILES ON THE
HIGH FREQUENCY PERFORMANCE OF InP/InGaAs SUPER SCALED HBTS D. Veksler, …

As a newly developed technique to slice GaN substrates, which are currently very expensive,
with less loss, we previously reported a laser slicing technique in this journal. In the …

Over the past few years, systems based on gallium nitride high-electron-mobility transistors (GaN
HEMTs) have increasingly penetrated the markets for cellular telephone base stations, …

Vertical power JFET devices in 4H-SiC are very attractive for high power, high temperature
switching applications because of their low specific on-resistance, fast switching frequencies, …

Heteroepitaxy with large thermal and lattice mismatch between the semiconductor and substrate
is a critical issue for high-quality epitaxial growth. Typically, high growth temperatures (>…

The paper uses secondary research to investigate various constructs and functional structures
of GaN as a thirdgeneration semiconductor. A brief history of semiconductors is provided …

This volume presents state-of-the-art works from top academic and research institutions in
the areas of high performance semiconductor materials, devices, and circuits. A broad …

L'objectif de ce travail est d'étudier les transistors à effet de champ à haute mobilité électronique
(HEMT) réalisés en Nitrure de Gallium par des mesures en bruit basse fréquence et de …