4H-SiC Semi-Circle Gate Power MOSFET with Low ON-Resistance and High Breakdown Voltage
… Our device with semi-circle gate shape has lower electrostatic field due to rounding-off the
bottom of the trench, which is favorable for enhancing the off-state performance of the devices. …
bottom of the trench, which is favorable for enhancing the off-state performance of the devices. …
Modeling electronic processing in GATE
S Kerhoas-Cavata, D Guez - Nuclear Instruments and Methods in Physics …, 2006 - Elsevier
An important feature of the GATE simulation tool for the complete simulation of PET or SPECT
scans is the modeling of signal processing after energy deposit in the detector crystal. In …
scans is the modeling of signal processing after energy deposit in the detector crystal. In …
A new buried-gate VMOSFET with suppressed overlap capacitance and improved electrical characteristics
CH Kuo, JT Lin, YC Eng, YH Fan - 2010 10th IEEE …, 2010 - ieeexplore.ieee.org
… Most importantly, the reduced surface scattering in the BGVMOS helps improve the drain
current and the transconductance mainly owing to the 1/4 circle gate scheme which is difficult …
current and the transconductance mainly owing to the 1/4 circle gate scheme which is difficult …
Strongly NP-hard discrete gate-sizing problems
W Ning - IEEE transactions on computer-aided design of …, 1994 - ieeexplore.ieee.org
… and circle-gate. For … circle-gate, unfortunately, there are two cells in the cell library to realize
that gate, and a choice must be made as to which cell is selected to implement the circle-gate…
that gate, and a choice must be made as to which cell is selected to implement the circle-gate…
[PDF][PDF] Computer modeling and simulation of the process of information microstructure replication for optical data storage
D Trifonov, K Kostadinov - CYBERNETICS AND INFORMATION …, 2008 - cit.iict.bas.bg
… The sprue system is known as a system, in which the central hole of the polymer substrate
is formed by direct punching of the circle gate from the polymer substrate. In the process of the …
is formed by direct punching of the circle gate from the polymer substrate. In the process of the …
Track initiation method for near space hypersonic targets based on adaptive wave gate.
X Song, TAN Xian-si, W Hong… - Application …, 2013 - search.ebscohost.com
… it set up sector gate, ellipse gate and partial circle gate exclusively aiming at the near space
… in the sector gate, it set up the partial circle gate according to the hypothesis that the target …
… in the sector gate, it set up the partial circle gate according to the hypothesis that the target …
[PDF][PDF] An approach for predicting the correct geometry and parameters of the sprue system of an optical disc mould by use a computer aided design and simulation
DS Trifonov, YE Toshev - Proceedings of Third International …, 2007 - researchgate.net
… pressure with the help of a circle gate located in the cavity centre. … , form and dimensions of
the circle gate, which result at the … and the scheme of the circle gate location play a significant …
the circle gate, which result at the … and the scheme of the circle gate location play a significant …
Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique
X Shi, K Henttinen, T Suni, I Suni… - IEEE electron device …, 2005 - ieeexplore.ieee.org
… Dependence of electron effective mobility on effective electric field extracted using circle
gate SOQ FETs. The inner and outer radii of the circle gate are 21 and 29 m, respectively. The …
gate SOQ FETs. The inner and outer radii of the circle gate are 21 and 29 m, respectively. The …
Improvement of the sprue system design of an injection mould for optical disc substrates using computer aided design and simulation
D Trifonov, Y Toshev - International Journal of Computer …, 2011 - inderscienceonline.com
… cropping punch or another system, removing the circle gate, in order to form the central hole…
the circle gate from polymer substrate, calls for minimal depth of the circle gate enabling its …
the circle gate from polymer substrate, calls for minimal depth of the circle gate enabling its …
Defective NKT cell development in mice and humans lacking the adapter SAP, the X-linked lymphoproliferative syndrome gene product
B Pasquier, L Yin, MC Fondanèche… - The Journal of …, 2005 - rupress.org
… The percentage of NKT cells corresponding to double positive cells in the circle gate is indicated
… The percentage of NKT cells corresponding to double positive cells in the circle gate is …
… The percentage of NKT cells corresponding to double positive cells in the circle gate is …