[HTML][HTML] Special role of indium nitride in the properties of related compounds and quantum structures
I Gorczyca, T Suski, P Perlin, I Grzegory, G Staszczak… - AIP Advances, 2024 - pubs.aip.org
… However, a dispute emerged in the early 2000s regarding the optical bandgap energy of
InN. The generally accepted value of the bandgap until the 2000s was ∼2 eV, 1,37 but the …
InN. The generally accepted value of the bandgap until the 2000s was ∼2 eV, 1,37 but the …
Understanding and optimization of InN and high indium containing InGaN alloys by metal organic chemical vapor deposition
Ö Tuna - 2013 - osti.gov
Among the III-nitride semiconductors (Ga,Al,In)N, InN is the most attractive one due to having
the narrowest bandgap of 0.64 eV. The revision in the bandgap of InN makes the InGaN …
the narrowest bandgap of 0.64 eV. The revision in the bandgap of InN makes the InGaN …