A new nanowire FinFET structure is developed for CMOS device scaling into the sub-10 nm
regime. Accumulation mode P-FET and inversion mode N-FET with 5 nm and 10 nm …

Recently, the need for low‐power, high‐speed portable devices grew rapidly in the semiconductor
industry. The developments in process technology made development of transistors …

Fin field-effect transistors (FinFETs) dominate the present Si FETs. However, when the gate
length is scaled down to the sub-10 nm region, the experimental Si FinFETs suffer from poor …

In recent technology, the demand for 3D multiple-gate MOSFETs such as FinFETs increase.
In this paper, FinFETs are explored and reviewed. The scaling of planar MOSFET below …

An optimization study of silicon gate-all-around (GAA) devices based on technology
computer-aided design tools is presented in this paper. GAA technology guidelines and solutions …

In the nano-scale era, the advantages of bulk-CMOS technology diminish with transistor
scaling. Among the difficulties encountered are the ON current limits, the inherent increase in …

GAA TSNWFET with 15 nm gate length and 4 nm radius nanowires is demonstrated and
shows excellent short channel immunity. p-TSNWFET shows high driving current of 1.94 mA/…

A unified compact model for gate-all-around (GAA) FETs is discussed. This single unified
model can accurately model different shapes of GAA FETs. In this work, we present its …

In this paper, we propose and analyze three different nanowire FinFETs: Silicon, Germanium
and SiGe nanowire FinFETs. We find that the logic performance parameters such as I on /I …

The ability to understand and model the performance limits of nanowire transistors is the
key to the design of next generation devices. Here, we report studies on high-mobility …