Suspended-gate FET as a sleep transistor for ultra-low stand-by power applications

Increased interest in hybrid Micro-Electro-Mechanical-Solid-State devices like Suspended-Gate FETs (SGFETs, Fig.1) has been shown recently thanks to their potential for low-power applications, especially as memory cells [1,2]. In principle, the device takes advantage of the movable gate, suspended over the transistor's channel, to obtain very abrupt switching of the FET along with two different voltages for turning the device "on" and "off". Once the gate is at the "up" position the transistor is "off" presenting an extremely low current. Increasing the gate bias V_G the gate moves towards the channel and at the "on" voltage it snaps onto the gate oxide driving the SGFET above its threshold providing very high current. The design and the optimization of this kind of device is a considerable challenge due to the lack of dedicated tools for MEMS-Solid-State analysis and numerical simulation. The purpose of this work is to present an original method of coupling state-of-the-art finite element analysis (FEA) tools in a self-consistent way and generate data for SGFET operation. These data are then used for the validation of an analytical model, which is implemented in a circuit simulator to demonstrate the concept of the SGFET as an ultra-low-off-current sleep transistor in advanced CMOS architectures.