A novel 2D position-sensitive semiconductor detector concept has been developed employing resistive electrodes in a single-sided silicon microstrip sensor. The resistive charge division method has been implemented reading out each strip at both ends, in order to get the second coordinate of an ionizing event along the strips length. Two generations of prototypes, with different layout, have been produced and characterized using a pulsed near infra-red laser. The feasibility of the resistive charge division method in silicon microstrip detectors has been demonstrated and the possibility of single-chip readout of the device has been investigated. Experimental data were compared with the theoretical expectations and the electrical simulation of the sensor equivalent circuit coupled to simple electronics readout circuits. The agreement between experimental and simulation results validates the developed simulation as a tool for the optimization of future sensor prototypes.