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Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator
/ Termo, Gennaro (CERN ; LPHE, Lausanne) ; Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Kloukinas, Kostas (CERN) ; Caselle, Michele (KIT, Karlsruhe) ; Elsenhans, Alexander Friedrich (KIT, Karlsruhe) ; Ulusoy, Ahmet Cagri (KIT, Karlsruhe) ; Koukab, Adil (LPHE, Lausanne) ; Sallese, Jean-Michel (LPHE, Lausanne)
The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon-On-Insulator (FDSOI) technology exposed to ultra-high total ionizing dose (TID) was investigated. Custom structures including n- and p-channel devices with different sizes and threshold voltage flavours were irradiated with X-rays up to a TID of 100 Mrad(SiO$_{2}$) with different back-gate bias configurations, from -8 V to 2 V. [...]
2024 - 7 p.
- Published in : JINST 19 (2024) C03039
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2023 (TWEPP 2023), Geremeas, Sardinia, Italy, 1 - 6 Oct 2023, pp.C03039
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Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID
/ Termo, G (CERN ; Ecole Polytechnique, Lausanne) ; Borghello, G (CERN) ; Faccio, F (CERN) ; Michelis, S (CERN) ; Koukab, A (Ecole Polytechnique, Lausanne) ; Sallese, J M (Ecole Polytechnique, Lausanne)
The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over time. As of 2014, 22 chips from 3 different fabs in 130 nm CMOS technology and 11 chips from 2 different fabs in 65 nm CMOS technology have been irradiated to ultra-high doses, ranging from 100 Mrad(SiO$_{2}$) to 1 Grad(SiO$_{2}$). [...]
2023 - 9 p.
- Published in : JINST
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01061
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Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications
/ Termo, G (CERN ; LPHE, Lausanne) ; Borghello, G (CERN) ; Faccio, F (CERN) ; Michelis, S (CERN) ; Koukab, A (LPHE, Lausanne) ; Sallese, J M (LPHE, Lausanne)
The 28 nm CMOS technology was selected as a promising candidate to upgrade electronics of particle detectors at CERN. Despite the robustness of this node to ultra-high levels of total ionizing dose has been proven, the resilience to 10161MeVneq/cm2 fluences is still unknown. [...]
2024 - 7 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1065 (2024) 169497
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Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs
/ Bonaldo, Stefano (Padua U. ; INFN, Padua) ; Wallace, Trace (Arizona State U., Tempe) ; Barnaby, Hugh (Arizona State U., Tempe) ; Borghello, Giulio (CERN) ; Termo, Gennaro (CERN ; Ecole Polytechnique, Lausanne) ; Faccio, Federico (CERN) ; Fleetwood, Daniel M (Vanderbilt U.) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Bagatin, Marta (Padua U. ; INFN, Padua) ; Paccagnella, Alessandro (Padua U. ; INFN, Padua) et al.
We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (increase up to 3–10 Mrad followed by a decrease), while the drain-to-source leakage current steadily augments until reaching a plateau at very large doses. [...]
2024 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 71 (2024) 427-436
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Measurements of total ionizing dose effects in TPSCo 65 nm and influence of NMOS bulk bias
/ Dorda Martin, A (CERN ; KIT, Karlsruhe, IKP) ; Ballabriga, R (CERN) ; Borghello, G (CERN) ; Campbell, M (CERN) ; Deng, W (CERN ; CCNU, Wuhan, Inst. Part. Phys.) ; Hong, G H (CERN ; Yonsei U.) ; Kremastiotis, I (CERN) ; Snoeys, W (CERN) ; Termo, G (EPFL-ISIC, Lausanne)
The CERN EP R&D; WP 1.2 aims to develop state-of-art monolithic pixel detectors using modern CMOS processes. The TPSCo 65 nm process is a suitable candidate and its radiation tolerance and sensor performance are therefore being studied. [...]
2023 - 8 p.
- Published in : JINST 18 (2023) C02036
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C02036
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Latest developments and characterisation results of DMAPS in TowerJazz 180nm for High Luminosity LHC
/ de Acedo, L Flores Sanz (CERN ; Glasgow U.) ; Allport, P (Birmingham U.) ; Tortajada, I Asensi (Valencia U., IFIC) ; Bortoletto, D (Oxford U.) ; Buttar, C (Glasgow U.) ; Cardella, R (CERN ; Geneva U.) ; Dachs, F (CERN ; TU Vienna) ; Dao, V (CERN) ; Dobrijevic, D (CERN ; Zagreb U.) ; Dyndal, M (CERN) et al.
The last couple of years have seen the development of Depleted Monolithic Active Pixel Sensors (DMAPS) fabricated in TowerJazz 180nm with a process modification to increase the radiation tolerance. While many of MAPS developments focus on low radiation environment, we have taken the development to high radiation environment like pp-experiments at High Luminosity LHC [...]
2022 - 4 p.
- Published in : J. Phys. : Conf. Ser. 2374 (2022) 012169
Fulltext: PDF;
In : International Conference on Technology and Instrumentation in Particle Physics (TIPP 2021), Online, Canada, 24 - 29 May 2021, pp.012169
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Fulltext
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2.5V step-down DCDCs: a radiation-hard solution for power conversion
/ Ripamonti, Giacomo (Ecole Polytechnique, Lausanne ; CERN) ; Michelis, Stefano (CERN) ; Faccio, Federico (CERN) ; Saggini, Stefano (Udine U.) ; Ursino, Mario (Udine U.) ; Blanchot, Georges (CERN) ; Caregari, Stefano (Ecole Polytechnique, Lausanne ; CERN) ; Koukab, Adil (Ecole Polytechnique, Lausanne) ; Kayal, Maher (Ecole Polytechnique, Lausanne)
Radiation- and magnetic field tolerant DCDC converters that step down the voltage from a 2.5 V bus are needed for the High-Luminosity detectors. This work presents the developed prototypes, based on ASICs designed in a 130 nm CMOS technology. [...]
SISSA, 2020 - 5 p.
- Published in : PoS TWEPP2019 (2020) 071
Fulltext: PDF;
In : TWEPP 2019 Topical Workshop on Electronics for Particle Physics, Santiago De Compostela, Spain, 2 - 6 Sep 2019, pp.071
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Effects of Bias and Temperature on the Dose-Rate Sensitivity of 65-nm CMOS Transistors
/ Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Termo, Gennaro (CERN) ; Michelis, Stefano (CERN) ; Costanzo, Sebastiano (CERN) ; Koch, Henri D (CERN) ; Fleetwood, Daniel M (Vanderbilt U.)
MOS transistors in 65-nm CMOS technology exposed to ultrahigh total ionizing dose (TID) levels show clear evidence of a true dose-rate (DR) dependence. In order to assess the impact of this effect and to understand its origin, an extensive measurement campaign has been carried out at different DRs, different temperatures, and different biases. [...]
2021 - 8 p.
- Published in : IEEE Trans. Nucl. Sci. 68 (2021) 573-580
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