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Studies of adhesives and metal contacts on silicon strip sensors for the ATLAS Inner Tracker / Poley, Anne-Luise
This thesis presents studies investigating the use of adhesives on the active area of silicon strip sensors for the construction of silicon strip detector modules for the ATLAS Phase-II Upgrade [...]
CERN-THESIS-2018-063 ; DESY-THESIS-2018-011 - Berlin : Humboldt U., Berlin, 2018-04-04. - 261 p.

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(91)

Evaluation of Bulk and Surface Radiation Damage of Silicon Sensors for the ATLAS Upgrade / Mikeštíková, Marcela (Prague, Inst. Phys.) ; Kodek, Zdeněk (Prague, Inst. Phys.) ; Št'astný, Jan (Prague, Inst. Phys.) /ATLAS Upgrade Strip Sensor
The electrical characteristics of different types of end-cap miniature n + -in- p strip sensors, ATLAS12A, were evaluated in Institute of Physics in Prague before and after proton and gamma irradiation. We report here on the bulk damage aspects, including the increase of leakage current and evaluation of the full depletion voltage and the surface damage, including the decrease of inter-strip resistance, changes in inter-strip capacitance and the effectiveness of punch-through protection structure [...]
SISSA, 2015 - 11 p. - Published in : PoS Vertex2014 (2015) 050 Fulltext: PDF; External link: Published version from PoS
In : 23rd International Workshop on Vertex Detectors, Doksy, Czech Republic, 15 - 19 Sep 2014, pp.050

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(83)

Silicon Strip Sensor Simulations for the CMS Phase-II Tracker Upgrade / Eichhorn, Thomas (DESY) /for the CMS Collaboration
The future high luminosity upgrade of the LHC will necessitate radiation harder sensors for the CMS silicon strip tracker. CMS has instigated a campaign to identify a possible technology baseline for upcoming sensor generations. [...]
CMS-CR-2012-320.- Geneva : CERN, 2012 - 7 p. Fulltext: PDF;
In : 2012 IEEE Nuclear Science Symposium and Medical Imaging Conference, Anaheim, California, USA, 29 Oct - 3 Nov 2012

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(66)

Simulations of Inter-Strip Capacitance and Resistance for the Design of the CMS Tracker Upgrade / Eichhorn, Thomas (DESY) ; Bhardwaj, Ashutosh (Delhi U.) ; Ranjeet, Ranjeet (Delhi U.) ; Eber, Robert (Karlsruhe U., EKP) ; Lalwani, Kavita (Delhi U.) ; Messineo, Alberto (INFN, Pisa ; Pisa U.) ; Peltola, Timo Hannu Tapani (Helsinki Inst. of Phys.) ; Printz, Martin (Karlsruhe U., EKP) ; Ranjan, Kirti (Delhi U.)
An upgrade of the LHC accelerator, the high luminosity phase of the LHC (HL-LHC), is foreseen for 2023. The tracking system of the CMS experiment at HL-LHC will face a more intense radiation environment than the present system was designed for. [...]
CMS-CR-2014-126.- Geneva : CERN, 2014 - 6 p. - Published in : PoS: TIPP2014 (2014) , pp. 279 Fulltext: PDF;
In : International Conference on Technology and Instrumentation in Particle Physics 2014, Amsterdam, Netherlands, 2 - 6 Jun 2014, pp.279

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(66)

Large Area Silicon Tracking Detectors with Fast Signal Readout for the Large Hadron Collider (LHC) at CERN / Köstner, S
The Standard Model of elementary particles, which is summarized briefly in the second chapter, incorporates a number of successful theories to explain the nature and consistency of matter [...]
CERN-THESIS-2005-052 - Geneva : CERN, 2005. - 220 p.

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(66)

Investigation of design parameters and choice of substrate resistivity and crystal orientation for the CMS silicon microstrip detector / Braibant, S
The electrical characteristics ( interstrip and backplane capacitance, leakage current, depletion and breakdown voltage) of silicon microstrip detectors were measured for strip pitches between 60 um and 240 um and various strip implant and metal widths on multi-geometry devices. Both AC and DC coupled devices wereinvestigated. [...]
CMS-NOTE-2000-011.- Geneva : CERN, 2000 Fulltext: PDF PS.Z;

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(63)

Studies of inter-strip capacitance in a silicon detector / Bachas, Konstantinos
CERN-THESIS-2003-076. - 2003. - 81 p.

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(58)

Capacitance measurements on silicon micro-strip detectors for the TT station of the LHCb experiment / Gassner, J (Zurich U.) ; Heule, S (Zurich U.) ; Lehner, F (Zurich U.) ; Lois, C (Zurich U. ; Santiago de Compostela U. )
We studied the electrical characteristics of a total of 15 silicon detectors: 5 GLAST2000 sensors, 5 OB2-type CMS sensors, and 5 Hamamatsu LHCb Multi-Geometry sensors.The different prototypes are evaluated because they have strip geometry parameters very similar to those foreseen for the TT station of the Silicon Tracker of the LHCb experiment at CERN, and are thus well suited for initial measurements. To carry out the evaluation, measurements of the leakage current, bulk capacitance, total strip capacitance, inter-strip capacitance, coupling capacitance, and resistance of the bias resistors are made for each detector. [...]
LHCb-2003-081.- Geneva : CERN, 2003 - 29 p. Access to fulltext document: PS.GZ; Fulltext: PDF;

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(57)

Investigation of the charge collection for strongly irradiated Silicon strip detectors of the CMS ECAL Preshower
Strongly irradiated silicon strip detectors of different size, thickness and different design options were tested in a muon beam at CERN in 1999. A charge collection efficiency in excess of 85% and a signal to noise ratio of 6 are obtained in all cases at high enough bias voltage. [...]
CMS-NOTE-2000-062.- Geneva : CERN, 2000 Fulltext: PDF PS.Z;

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First Production of New Thin 3D Sensors for HL-LHC at FBK / Sultan, D.M.S. (U. Trento (main) ; TIFPA-INFN, Trento) ; Dalla Betta, Gian-Franco (U. Trento (main) ; TIFPA-INFN, Trento) ; Mendicino, Roberto (U. Trento (main) ; TIFPA-INFN, Trento) ; Boscardin, Maurizio (Fond. Bruno Kessler, Trento ; TIFPA-INFN, Trento) ; Ronchin, Sabina (Fond. Bruno Kessler, Trento ; TIFPA-INFN, Trento) ; Zorzi, Nicola (Fond. Bruno Kessler, Trento ; TIFPA-INFN, Trento)
Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2e16 neq.cm-2 must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (50x50 or 25x100 um2 cell size), thinner active region (~100 um), narrower columnar electrodes (~5 um diameter) with reduced inter-electrode spacing (~30 um), and very slim edges (~100 um). [...]
arXiv:1612.00638.- Geneva : CERN, 2017-01-09 - 8 p. - Published in : JINST 12 (12) C01022 Fulltext: PDF; Preprint: PDF;
In : 18th International Workshop on Radiation Imaging Detectors, Barcelona, Spain, 03 - 07 Jul 2016, pp.C01022

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