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1.
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Improvement in the Design and Performance of the Monopix2 Reticle-Scale DMAPS
/ Caicedo, Ivan (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Berdalovic, Ivan (CERN) ; Breugnon, Patrick (Marseille, CPPM) ; Cardella, Roberto (CERN) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; de Acedo, Leyre Flores Sanz (CERN) et al.
“LF-Monopix2” and “TJ-Monopix2” are the second generation of “Monopix” Depleted Monolithic Active Pixel Sensor prototypes fabricated in 150 nm and 180 nm CMOS processes, respectively. Both devices implement a fully functional column-drain read-out architecture at a reticle-size scale, but differ on the concept used for pixel design. [...]
2024 - 13 p.
- Published in : JPS Conf. Proc. 42 (2024) 011021
Fulltext: PDF;
In : The International Workshop on Vertex Detectors (VERTEX 2022), Tateyama, Japan, 24 - 28 Oct 2022, pp.011021
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2.
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Future developments of radiation tolerant sensors based on the MALTA architecture
/ Dobrijević, D (CERN ; Zagreb U.) ; Allport, P (Birmingham U.) ; Asensi, I (CERN) ; Berlea, D (DESY, Zeuthen) ; Bortoletto, D (Oxford U.) ; Buttar, C (Glasgow U.) ; Dachs, F (CERN) ; Dao, V (CERN) ; Denizli, H (Abant Izzet Baysal U.) ; Sanz de Acedo, L F (CERN) et al.
The planned MALTA3 DMAPS designed in the standard TowerJazz 180 nm imaging process will implement the numerous process modifications, as well as front-end changes in order to boost the charge collection efficiency after the targeted fluence of 1 × 10$^{15}$ 1 MeV n$_{eq}$/cm$^{2}$. The effectiveness of these changes have been demonstrated with recent measurements of the full size MALTA2 chip. [...]
2023 - 9 p.
- Published in : JINST
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C03013
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3.
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Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process
/ Rinella, Gianluca Aglieri (CERN) ; Aglietta, Luca (INFN, Turin ; Turin U.) ; Antonelli, Matias (INFN, Trieste) ; Barile, Francesco (INFN, Bari ; Bari U.) ; Benotto, Franco (INFN, Turin) ; Beolè, Stefania Maria (INFN, Turin ; Turin U.) ; Botta, Elena (INFN, Turin ; Turin U.) ; Bruno, Giuseppe Eugenio (Bari Polytechnic ; INFN, Bari) ; Carnesecchi, Francesca (CERN) ; Colella, Domenico (INFN, Bari ; Bari U.) et al.
In the context of the CERN EP R&D; on monolithic sensors and the ALICE ITS3 upgrade, the Tower Partners Semiconductor Co (TPSCo) 65 nm process has been qualified for use in high energy physics, and adopted for the ALICE ITS3 upgrade. An Analog Pixel Test Structure (APTS) featuring fast per pixel operational-amplifier-based buffering for a small matrix of four by four pixels, with a sensor with a small collection electrode and a very non-uniform electric field, was designed to allow detailed characterization of the pixel performance in this technology. [...]
arXiv:2407.18528.-
2024-11-12 - 27 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1070 (2025) 170034
Fulltext: PDF;
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4.
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Prototype measurement results in a 65 nm technology and TCAD simulations towards more radiation tolerant monolithic pixel sensors
/ Lemoine, C (CERN ; Strasbourg, IPHC) ; Aglieri Rinella, G (CERN) ; Baudot, J (Strasbourg, IPHC) ; Borghello, G (CERN) ; Carnesecchi, F (CERN) ; Hillemanns, H (CERN) ; Kluge, A (CERN) ; Kucharska, G (CERN) ; Leitao, P V (CERN) ; Mager, M (CERN) et al.
Early measurements on monolithic pixel sensor prototypes in the TPSCo 65 nm technology indicate a different response and radiation tolerance (up to5×10$^{15}$ 1 MeV n$_{eq}$ cm) for different sensor layout and process variants, illustrating the importance of layout and process in the path towards increased sensor radiation tolerance. Using these measurement results, TCAD simulations provide more insight to link the macroscopic behaviour of specific sensor variants to the details of its structure. [...]
2024 - 7 p.
- Published in : JINST 19 (2024) C02033
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2023 (TWEPP 2023), Geremeas, Sardinia, Italy, 1 - 6 Oct 2023, pp.C02033
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5.
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Quad-module characterization with the MALTA monolithic pixel chip
/ Dachs, F (CERN) ; Zoubir, A M (Darmstadt, Tech. U.) ; Sharma, A (CERN) ; Solans Sanchez, C (CERN) ; Buttar, C M (Glasgow U.) ; Bortoletto, D (Oxford U.) ; Dobrijevic, D (Zagreb U.) ; Berlea, D -V (DESY) ; Charbon, E (Ecole Polytechnique, Lausanne) ; Piro, F (CERN) et al.
The MALTA silicon pixel detector combines a depleted monolithic active pixel sensor (DMAPS) with a fully asynchronous front-end and readout. It features a high granularity pixel matrix with a 36.4 μm symmetric pixel pitch, low power consumption of <1 μW/pixel and low material budget with detector thicknesses as little as 50 μm. [...]
2024 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1064 (2024) 169306
In : PSD13: The 13th International Conference on Position Sensitive Detectors, Oxford, United Kingdom, 3 - 9 Sep 2023, pp.169306
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6.
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Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process
/ Rinella, Gianluca Aglieri (CERN) ; Alocco, Giacomo (INFN, Cagliari) ; Antonelli, Matias (INFN, Trieste) ; Baccomi, Roberto (INFN, Trieste) ; Beole, Stefania Maria (INFN, Turin) ; Blidaru, Mihail Bogdan (Heidelberg U.) ; Buttwill, Bent Benedikt (Heidelberg U.) ; Buschmann, Eric (CERN) ; Camerini, Paolo (Trieste U. ; INFN, Trieste) ; Carnesecchi, Francesca (CERN) et al.
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. [...]
arXiv:2403.08952.-
2024-09-21 - 40 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1069 (2024) 169896
Fulltext: 2403.08952 - PDF; Publication - PDF;
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7.
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8.
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Radiation Hardness of MALTA2, a Monolithic Active Pixel Sensor for Tracking Applications
/ Berlea, D V (DESY, Zeuthen ; Humboldt U., Berlin (main)) ; Allport, P (Birmingham U.) ; Tortajada, I Asensi (CERN) ; Bortoletto, D (Oxford U.) ; Buttar, C (Glasgow U.) ; Charbon, E (Ecole Polytechnique, Lausanne) ; Dachs, F (CERN) ; Dao, V (CERN) ; Denizili, H (Abant Izzet Baysal U.) ; Dobrijevic, D (CERN) et al.
MALTA is a depleted monolithic active pixel sensor (DMAPS) developed in the Tower Semiconductor 180-nm CMOS imaging process. Monolithic CMOS sensors offer advantages over current hybrid imaging sensors in terms of both increased tracking performance due to lower material budget and ease of integration and construction costs due to the integration of read-out and active sensor into one ASIC. [...]
2023 - 7 p.
- Published in : IEEE Trans. Nucl. Sci. 70 (2023) 2303-2309
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9.
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A Compact Front-End Circuit for a Monolithic Sensor in a 65-nm CMOS Imaging Technology
/ Piro, F (CERN ; Ecole Polytechnique, Lausanne) ; Rinella, G Aglieri (CERN) ; Andronic, A (U. Munster) ; Antonelli, M (INFN, Trieste) ; Aresti, M (Cagliari U. ; INFN, Cagliari) ; Baccomi, R (INFN, Trieste) ; Becht, P (Heidelberg U.) ; Beolè, S (Turin U. ; INFN, Turin) ; Braach, J (CERN) ; Buckland, M D (INFN, Trieste ; Trieste U.) et al.
This article presents the design of a front-end circuit for monolithic active pixel sensors (MAPSs). The circuit operates with a sensor featuring a small, low-capacitance (< 2 fF) collection electrode and is integrated into the DPTS chip, a proof-of-principle prototype of 1.5×1.5 mm including a matrix of 32×32 pixels with a pitch of 15μm . [...]
2023 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 70 (2023) 2191-2200
Fulltext: PDF;
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10.
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Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
/ Rinella, G Aglieri (CERN) ; Andronic, A (Munster U., ITP) ; Antonelli, M (INFN, Trieste ; Trieste U.) ; Baccomi, R (INFN, Trieste ; Trieste U.) ; Ballabriga, R (CERN) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Baudot, J (Strasbourg, IPHC) ; Becht, P (Heidelberg U.) ; Benotto, F (INFN, Turin ; Turin U.) et al.
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. [...]
2023 - 15 p.
- Published in : PoS Pixel2022 (2023) 083
Fulltext: PDF;
In : 10th International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.083
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