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A Study of the Radiation Tolerance of CVD Diamond to 70 MeV Protons, Fast Neutrons and 200 MeV Pions / RD42 Collaboration
We measured the radiation tolerance of commercially available diamonds grown by the Chemical Vapor Deposition process by measuring the charge created by a 120 GeV hadron beam in a 50 μm pitch strip detector fabricated on each diamond sample before and after irradiation. We irradiated one group of samples with 70 MeV protons, a second group of samples with fast reactor neutrons (defined as energy greater than 0.1 MeV), and a third group of samples with 200 MeV pions, in steps, to (8.8±0.9) × 1015 protons/cm2, (1.43±0.14) × 1016 neutrons/cm2, and (6.5±1.4) × 1014 pions/cm2, respectively. [...]
2020 - 19 p. - Published in : Sensors 20 (2020) 6648 Fulltext: PDF;

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RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders / Balbuena, Juan Pablo (Barcelona, Inst. Microelectron.) ; Bassignana, Daniela (Barcelona, Inst. Microelectron.) ; Campabadal, Francesca (Barcelona, Inst. Microelectron.) ; Díez, Sergio (Barcelona, Inst. Microelectron.) ; Fleta, Celeste (Barcelona, Inst. Microelectron.) ; Lozano, Manuel (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Ullán, Miguel (Barcelona, Inst. Microelectron.) ; Creanza, Donato (Bari U. ; INFN, Bari) et al.
The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration..
CERN-LHCC-2010-012 ; LHCC-SR-003. - 2010. - 73 p.
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Tests of CMS Silicon Detector Modules with a 350 MeV/c Hadron Beam / Angarano, Matteo Maria (INFN Perugia and Univ., Bari, Italy) ; Bauer, Thomas (HEPHY, Vienna, Austria) ; Biasini, Maurizio (INFN, Perugia, Italy) ; Bilei, Gian Mario (INFN, Perugia, Italy) ; Bisello, Dario (INFN, Padova, Italy) ; Cecchetti, S (INFN, Perugia, Italy) ; Creanza, Donato (INFN, Bari, Italy) ; Dierlamm, Alexander (IEKP Universitat Karlsruhe (TH), Germany) ; Dirkes, Guido (IEKP Universitat Karlsruhe (TH), Germany) ; Fano, Livio (INFN, Perugia, Italy) et al.
Different CMS silicon microstrip detectors equipped with the APV6, APV25S0 or APV25S1 readout chips have been exposed to a 350 MeV/c pion or proton beam at the Paul Scherrer Institute (PSI, Villigen, CH). We compare the performance of irradiated and non-irradiated silicon sensors as well as the APV6 and APV25 behavior. [...]
CMS-NOTE-2001-049.- Geneva : CERN, 2001 Fulltext: PDF PS.Z;

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Se også: lignende forfatternavn
80	Grigoriev, E
122	Grigoriev, E A
2	Grigoriev, E L
5	Grigoriev, E P
9	Grigoriev, E.
1	Grigoriev, Evgeniy

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