Nothing Special   »   [go: up one dir, main page]

CERN Accelerating science

CERN Document Server Encontrados 31 registros  1 - 10siguientefinal  ir al registro: La búsqueda tardó 1.35 segundos. 
1.
Improvement in the Design and Performance of the Monopix2 Reticle-Scale DMAPS / Caicedo, Ivan (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Berdalovic, Ivan (CERN) ; Breugnon, Patrick (Marseille, CPPM) ; Cardella, Roberto (CERN) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; de Acedo, Leyre Flores Sanz (CERN) et al.
“LF-Monopix2” and “TJ-Monopix2” are the second generation of “Monopix” Depleted Monolithic Active Pixel Sensor prototypes fabricated in 150 nm and 180 nm CMOS processes, respectively. Both devices implement a fully functional column-drain read-out architecture at a reticle-size scale, but differ on the concept used for pixel design. [...]
2024 - 13 p. - Published in : JPS Conf. Proc. 42 (2024) 011021 Fulltext: PDF;
In : The International Workshop on Vertex Detectors (VERTEX 2022), Tateyama, Japan, 24 - 28 Oct 2022, pp.011021
2.
Recent results and perspectives of the Monopix Depleted Monolithic Active Pixel Sensors (DMAPS) / Hügging, Fabian (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrilon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Hirono, Toko (Bonn U.) et al.
The integration of readout electronics and sensors into a single entity of silicon in monolithic pixel detectors lowers the material budget while simplifying the production procedure compared to the conventional hybrid pixel detector concept. The increasing availability of high-resistivity substrates and high-voltage capabilities in commercial CMOS processes facilitates the application of depleted monolithic active pixel sensors (DMAPS) in modern particle physics experiments. [...]
2024 - 3 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1070 (2025) 170007 Fulltext: PDF;
In : 16th Pisa Meeting on Advanced Detectors (Pisameet 2024), La Biodola, Isola D'elba, Italy, 26 May - 1 Jun 2024, pp.170007
3.
RD53 pixel chips for the ATLAS and CMS Phase-2 upgrades at HL-LHC / Loddo, F (INFN, Bari) ; Andreazza, A (Milan U. ; INFN, Milan) ; Arteche, F (Sao Paulo, Inst. Tech. Aeronautics) ; Barbero, M B (Marseille, CPPM) ; Barillon, P (Marseille, CPPM) ; Beccherle, R (INFN, Pisa) ; Bilei, G M (INFN, Perugia ; Perugia U.) ; Bjalas, W (CERN) ; Bonaldo, S (INFN, Padua ; Padua U.) ; Bortoletto, D (Oxford U.) et al.
The Phase-2 upgrades at the High-Luminosity LHC of ATLAS and CMS experiments at CERN will require a new tracker with readout electronics operating in extremely harsh radiation environment (1 Grad), high hit rate (3.5 GHz/cm2) and high data rate readout (5 Gb/s). The RD53 collaboration is a joint effort between the ATLAS and CMS to qualify the chosen 65 nm CMOS technology in high radiation environment and develop the pixel readout chips of both experiments. [...]
FERMILAB-PUB-24-0469-PPD.- 2024 - 5 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1067 (2024) 169682
In : PSD13: The 13th International Conference on Position Sensitive Detectors, Oxford, United Kingdom, 3 - 9 Sep 2023, pp.169682
4.
Single event effects on the RD53B pixel chip digital logic and on-chip CDR / RD53 Collaboration
The RD53B chip for HL-LHC upgrades of ATLAS and CMS pixel detectors needs to provide reliable operation in a radiation hostile environment with inevitable Single Event Effects (SEE). To answer the challenge, substantial efforts are made to protect and evaluate the critical parts of the digital logic and to characterize the on-chip Clock and Data Recovery (CDR) circuit. [...]
2022 - 7 p. - Published in : JINST 17 (2022) C05001
In : TWEPP 2021 Topical Workshop on Electronics for Particle Physics, Online, Online, 20 - 24 Sep 2021, pp.C05001
5.
Progress in DMAPS developments and first tests of the Monopix2 chips in 150 nm LFoundry and 180 nm TowerJazz technology / Dingfelder, J (Bonn U.) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Berdalovic, I (CERN) ; Bespin, C (Bonn U.) ; Breugnon, P (Marseille, CPPM) ; Caicedo, I (Bonn U.) ; Cardella, R (CERN) ; Degerli, Y (IRFU, Saclay) ; Flores Sanz de Acedo, L (CERN) et al.
Depleted Monolithic Active Pixel Sensors (DMAPS) are monolithic pixel detectors with high-resistivity substrates designed for use in high-rate and high-radiation environments. They are produced in commercial CMOS processes, resulting in relatively low production costs and short turnaround times, and offer a low material budget. [...]
2022 - 6 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1034 (2022) 166747
In : 30th International Workshop on Vertex Detectors (VERTEX 2021), Online, UK, 27 - 30 Sep 2021, pp.166747
6.
Depleted Monolithic Active Pixel Sensors in the LFoundry 150 nm and TowerJazz 180 nm CMOS Technologies / Wang, T (Bonn U.) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Berdalovic, I (CERN) ; Bespin, C (Bonn U.) ; Bhat, S (Marseille, CPPM) ; Breugnon, P (Marseille, CPPM) ; Caicedo, I (Bonn U.) ; Cardella, R (CERN) ; Chen, Z (Marseille, CPPM) et al.
The monolithic CMOS pixel sensor for charged particle tracking has already become a mainstream technology in high energy particle physics (HEP) experiments. During the last decade, progressive improvements have been made for CMOS pixels to deal with the high-radiation and high-rate environments expected, for example, at the future High Luminosity LHC. [...]
SISSA, 2020 - 10 p. - Published in : PoS Vertex2019 (2020) 026 Fulltext from Publisher: PDF;
In : Vertex 2019: 28th International Workshop on Vertex Detectors, Lopud Island, Croatia, 13 - 18 Oct 2019, pp.026
7.
RD53 analog front-end processors for the ATLAS and CMS experiments at the High-Luminosity LHC / RD53 Collaboration
This work discusses the design and the main results relevant to the characterization of analog front-end processors in view of their operation in the pixel detector readout chips of ATLAS and CMS at the High-Luminosity LHC. The front-end channels presented in this paper are part of RD53A, a large scale demonstrator designed in a 65 nm CMOS technology by the RD53 collaboration.The collaboration is now developing the full-sized readout chips for the actual experiments. [...]
SISSA, 2020 - 9 p. - Published in : PoS Vertex2019 (2020) 021 Fulltext from Publisher: PDF;
In : Vertex 2019: 28th International Workshop on Vertex Detectors, Lopud Island, Croatia, 13 - 18 Oct 2019, pp.021
8.
BDAQ53, a versatile pixel detector readout and test system for the ATLAS and CMS HL-LHC upgrades / Daas, Michael (Bonn U.) ; Dieter, Yannick (Bonn U.) ; Dingfelder, Jochen (Bonn U.) ; Frohne, Markus (Bonn U.) ; Giakoustidis, Georgios (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Hinterkeuser, Florian (Bonn U.) ; Hügging, Fabian (Bonn U.) ; Janssen, Jens (Bonn U.) ; Krüger, Hans (Bonn U.) et al.
BDAQ53 is a readout system and verification framework for hybrid pixel detector readout chips of the RD53 family. These chips are designed for the upgrade of the inner tracking detectors of the ATLAS and CMS experiments. [...]
arXiv:2005.11225.- 2021-01-11 - 6 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 986 (2021) 164721 Fulltext: PDF;
9.
The ABC130 barrel module prototyping programme for the ATLAS strip tracker / ATLAS Collaboration
For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. [...]
arXiv:2009.03197.- 2020-09-03 - 82 p. - Published in : JINST 15 (2020) P09004 Fulltext: PDF;
10.
Radiation hard DMAPS pixel sensors in 150 nm CMOS technology for operation at LHC / Barbero, M. (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bespin, C. (Bonn U.) ; Bhat, S. (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Chen, Z. (Marseille, CPPM) ; Degerli, Y. (IRFU, Saclay) ; Dingfelder, J. (Bonn U.) ; Godiot, Stephanie (Marseille, CPPM) et al.
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. [...]
arXiv:1911.01119.- 2020-05-22 - 22 p. - Published in : JINST Fulltext: PDF;

CERN Document Server : Encontrados 31 registros   1 - 10siguientefinal  ir al registro:
Vea también: autores con nombres similares
9 Rymaszewski, P.
11 Rymaszewski, Piotr
¿Le interesa recibir alertas sobre nuevos resultados de esta búsqueda?
Defina una alerta personal vía correo electrónico o subscríbase al canal RSS.
¿No ha encontrado lo que estaba buscando? Intente su búsqueda en:
Rymaszewski, P en Amazon
Rymaszewski, P en CERN EDMS
Rymaszewski, P en CERN Intranet
Rymaszewski, P en CiteSeer
Rymaszewski, P en Google Books
Rymaszewski, P en Google Scholar
Rymaszewski, P en Google Web
Rymaszewski, P en IEC
Rymaszewski, P en IHS
Rymaszewski, P en INSPIRE
Rymaszewski, P en ISO
Rymaszewski, P en KISS Books/Journals
Rymaszewski, P en KISS Preprints
Rymaszewski, P en NEBIS
Rymaszewski, P en SLAC Library Catalog
Rymaszewski, P en Scirus