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CERN Document Server 找到 507 笔记录  1 - 10下一个最後  跳到记录: 检索需时 0.78 秒. 
1.
Testbeam Characterization of a SiGe BiCMOS Monolithic Silicon Pixel Detector with Internal Gain Layer / Paolozzi, L. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Moretti, T. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U.) ; Elviretti, M. (CERN) ; Rücker, H. (CERN) ; Cadoux, F. (Geneva U.) ; Cardarelli, R. (Geneva U.) et al.
A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. [...]
arXiv:2412.07606. - 18.
Fulltext
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2.
Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer / Moretti, T. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Semendyaev, I. (Geneva U.) ; Elviretti, M. (IHP, Frankfurt) ; Rücker, H. (IHP, Frankfurt) ; Nakamura, K. (KEK, Tsukuba) ; Takubo, Y. (KEK, Tsukuba) et al.
Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μ m pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a 130 nm SiGe BiCMOS technology process. [...]
arXiv:2404.12885.- 2024-07-29 - 15 p. - Published in : JINST 19 (2024) P07036 Fulltext: 2404.12885 - PDF; Publication - PDF;
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3.
Pixel detector hybridisation and integration with anisotropic conductive adhesives / Volker, Alexander (CERN) ; Schmidt, Janis Viktor (CERN) ; Dannheim, Dominik (CERN) ; Svihra, Peter (CERN) ; Pinto, Mateus Vicente Barreto (Geneva U.) ; de Oliveira, Rui (CERN) ; Braach, Justus (CERN) ; Yang, Xiao (CERN) ; Ruat, Marie (ESRF, Grenoble) ; Magalhaes, Débora (ESRF, Grenoble ; DESY) et al.
A reliable and cost-effective interconnect technology is required for the development of hybrid pixel detectors. The interconnect technology needs to be adapted for the pitch and die sizes of the respective applications. [...]
arXiv:2312.09883.- 2024-05-13 - 13 p. - Published in : JINST 19 (2024) C05024 Fulltext: 2312.09883 - PDF; Publication - PDF;
In : 16th Topical Seminar on Innovative Particle and Radiation Detectors, Siena, Italy, 25 - 29 Sep 2023, pp.C05024
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4.
Time resolution of a SiGe BiCMOS monolithic silicon pixel detector without internal gain layer with a femtosecond laser / Milanesio, M. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Moretti, T. (Geneva U.) ; Latshaw, A. (Geneva U.) ; Bonacina, L. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Elviretti, M. (IHP, Frankfurt) ; Rücker, H. (IHP, Frankfurt) et al.
The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. [...]
arXiv:2401.01229.- 2024-04-24 - 11 p. - Published in : JINST 19 (2024) P04029 Fulltext: 2401.01229 - PDF; Publication - PDF;
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5.
Annual Report 2023 and Phase-I Closeout / Aglieri Rinella, Gianluca
This report summarises the activities of the CERN strategic R&D programme on technologies for future experiments during the year 2023, and highlights the achievements of the programme during its first phase 2020-2023..
CERN-EP-RDET-2024-001 - 208.

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6.
Radiation tolerance of SiGe BiCMOS monolithic silicon pixel detectors without internal gain layer / Milanesio, M. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Moretti, T. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Semendyaev, I. (Geneva U.) ; Zambito, S. (Geneva U.) ; Nakamura, K. (KEK, Tsukuba) et al.
A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. [...]
arXiv:2310.19398.- 2024-01-15 - 13 p. - Published in : JINST 19 (2024) P01014 Fulltext: 2310.19398 - PDF; publication - PDF;
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7.
Timing Performance of the CMS High Granularity Calorimeter Prototype / CMS HGCAL Collaboration
This paper describes the experience with the calibration, reconstruction and evaluation of the timing capabilities of the CMS HGCAL prototype in the beam tests in 2018. The calibration procedure includes multiple steps and corrections ranging from tens of nanoseconds to a few hundred picoseconds. [...]
arXiv:2312.14622.- 2024-04-11 - 22 p. - Published in : JINST 19 (2024) P04015 Fulltext: PDF; Fulltext from Publisher: PDF;
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8.
20 ps time resolution with a fully-efficient monolithic silicon pixel detector without internal gain layer / Zambito, S. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Moretti, T. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Munker, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Elviretti, M. (Leibniz U., Hannover) et al.
A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. [...]
arXiv:2301.12244.- 2023-03-28 - 16 p. - Published in : JINST Fulltext: 2301.12244 - PDF; Publication - PDF;
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9.
Development of novel low-mass module concepts based on MALTA monolithic pixel sensors / Weick, J. (CERN ; Darmstadt, Tech. Hochsch.) ; Dachs, F. (CERN) ; Riedler, P. (CERN) ; Pinto, M. Vicente Barreto (Geneva U.) ; Zoubir, A.M. (Darmstadt, Tech. Hochsch.) ; de Acedo, L. Flores Sanz (CERN) ; Asensi Tortajada, I. (CERN) ; Dao, V. (CERN) ; Dobrijevic, D. (CERN ; Zagreb U.) ; Pernegger, H. (CERN) et al.
The MALTA CMOS monolithic silicon pixel sensors has been developed in the Tower 180 nm CMOS imaging process. It includes an asynchronous readout scheme and complies with the ATLAS inner tracker requirements for the HL-LHC. [...]
arXiv:2303.05792.- 2023-04-03 - 5 p. - Published in : JINST 18 (2023) C04003 Fulltext: PDF;
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10.
Annual Report 2022 / Aglieri, Gianluca
This report summarises the activities and main achievements of the CERN strategic R&D programme on technologies for future experiments during the year 2022
CERN-EP-RDET-2023-002 - 100.

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