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CERN Document Server Намерени са 7 записа  Търсенето отне 0.64 секунди. 
1.
Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator / Termo, Gennaro (CERN ; LPHE, Lausanne) ; Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Kloukinas, Kostas (CERN) ; Caselle, Michele (KIT, Karlsruhe) ; Elsenhans, Alexander Friedrich (KIT, Karlsruhe) ; Ulusoy, Ahmet Cagri (KIT, Karlsruhe) ; Koukab, Adil (LPHE, Lausanne) ; Sallese, Jean-Michel (LPHE, Lausanne)
The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon-On-Insulator (FDSOI) technology exposed to ultra-high total ionizing dose (TID) was investigated. Custom structures including n- and p-channel devices with different sizes and threshold voltage flavours were irradiated with X-rays up to a TID of 100 Mrad(SiO$_{2}$) with different back-gate bias configurations, from -8 V to 2 V. [...]
2024 - 7 p. - Published in : JINST 19 (2024) C03039 Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2023 (TWEPP 2023), Geremeas, Sardinia, Italy, 1 - 6 Oct 2023, pp.C03039
Подробен запис - Подобни записи
2.
High-rate, high-resolution single photon X-ray imaging: Medipix4, a large 4-side buttable pixel readout chip with high granularity and spectroscopic capabilities / Sriskaran, Viros (CERN) ; Alozy, Jerome (CERN) ; Ballabriga, Rafael (CERN) ; Campbell, Michael (CERN) ; Christodoulou, Pinelopi (CERN ; CTU, Prague) ; Heijne, Erik (CTU, Prague) ; Koukab, Adil (Ecole Polytechnique, Lausanne) ; Kugathasan, Thanushan (CERN) ; Llopart, Xavier (CERN) ; Piller, Markus (CERN ; Graz, Tech. U.) et al.
The Medipix4 chip is the latest member in the Medipix/Timepix family of hybrid pixel detector chips aimed at high-rate spectroscopic X-ray imaging using high-Z materials. It can be tiled on all 4 sides making it ideal for constructing large-area detectors with minimal dead area. [...]
arXiv:2310.10188.- 2024-02-16 - 15 p. - Published in : JINST 19 (2024) P02024 Fulltext: 2310.10188 - PDF; Publication - PDF;
Подробен запис - Подобни записи
3.
A Dual-Edge Pulsewidth Modulator for Fast Dynamic Response DC–DC Converters / Ripamonti, Giacomo (CERN) ; Saggini, Stefano (Udine U.) ; Corradini, Luca (Padua U.) ; Rizzolatti, Roberto (Udine U.) ; Faccio, Federico (CERN) ; Michelis, Stefano (CERN) ; Koukab, Adil (Ecole Polytechnique, Lausanne) ; Kayal, Maher (Ecole Polytechnique, Lausanne)
Voltage regulator modules are dc–dc converters that power modern microprocessors. They must exhibit a fast dynamic response, in order to achieve satisfactory regulation performance in spite of the rapid load current variations. [...]
2019 - 5 p. - Published in : IEEE Transactions on Power Electronics 34 (2019) 28-32
Подробен запис - Подобни записи
4.
2.5V step-down DCDCs: a radiation-hard solution for power conversion / Ripamonti, Giacomo (Ecole Polytechnique, Lausanne ; CERN) ; Michelis, Stefano (CERN) ; Faccio, Federico (CERN) ; Saggini, Stefano (Udine U.) ; Ursino, Mario (Udine U.) ; Blanchot, Georges (CERN) ; Caregari, Stefano (Ecole Polytechnique, Lausanne ; CERN) ; Koukab, Adil (Ecole Polytechnique, Lausanne) ; Kayal, Maher (Ecole Polytechnique, Lausanne)
Radiation- and magnetic field tolerant DCDC converters that step down the voltage from a 2.5 V bus are needed for the High-Luminosity detectors. This work presents the developed prototypes, based on ASICs designed in a 130 nm CMOS technology. [...]
SISSA, 2020 - 5 p. - Published in : PoS TWEPP2019 (2020) 071 Fulltext: PDF;
In : TWEPP 2019 Topical Workshop on Electronics for Particle Physics, Santiago De Compostela, Spain, 2 - 6 Sep 2019, pp.071
Подробен запис - Подобни записи
5.
A Reliability and Efficiency Optimization System for Hard-Switching DC/DC Converters / Ripamonti, Giacomo (CERN) ; Michelis, Stefano (CERN) ; Faccio, Federico (CERN) ; Saggini, Stefano (Udine U.) ; Koukab, Adil (Ecole Polytechnique, Lausanne) ; Kayal, Maher (Ecole Polytechnique, Lausanne)
The Large Hadron Collider experiments at CERN will use power distribution schemes relying on integrated buck DCIDC converters. Due to the radiation-hardness requirements, the devices used for the development of such converters will have a voltage rating which is close to the converters' input voltage. [...]
2018 - 5 p. - Published in : 10.1109/NEWCAS.2018.8585694
In : 16th IEEE International New Circuits and Systems Conference, Montreal, Canada, 24 - 28 Jun 2018, pp.157-161
Подробен запис - Подобни записи
6.
A 2.5V Step-Down DC-DC Converter for Two-Stages Power Distribution Systems / Ripamonti, Giacomo (Ecole Polytechnique, Lausanne ; CERN) ; Michelis, Stefano (CERN) ; Faccio, Federico (CERN) ; Blanchot, Georges (CERN) ; Saggini, Stefano (U. Udine (main)) ; Rizzolatti, Roberto (U. Udine (main)) ; Ursino, Mario (U. Udine (main)) ; Koukab, Adil (Ecole Polytechnique, Lausanne) ; Kayal, Maher (Ecole Polytechnique, Lausanne)
A prototype second-stage buck DC-DC converter has been designed in 130 nm CMOS and fully characterized. This circuit provides up to 3 A at an adjustable output voltage of 0.6-1.5 V from an intermediate bus voltage of 2.5 V. [...]
SISSA, 2018 - 5 p. - Published in : PoS TWEPP-17 (2018) 059 Fulltext: PDF; External link: PoS server
In : Topical Workshop on Electronics for Particle Physics, Santa Cruz, Ca, United States Of America, 11 - 15 Sep 2017, pp.059
Подробен запис - Подобни записи
7.
Substrate-currents-aware characterization of an integrated buck DC/DC converter for floor-plan optimization / Ripamonti, Giacomo (CERN) ; Michelis, Stefano (CERN) ; Buccella, Pietro (Ecole Polytechnique, Lausanne) ; Koukab, Adil (Ecole Polytechnique, Lausanne) ; Kayal, Maher (Ecole Polytechnique, Lausanne)
The performance of integrated DC/DC converters is affected by substrate parasitic devices, such as bipolar transistors and thyristors: these devices cause enhanced substrate noise that can lead to the malfunctioning of the control circuitry, they degrade the efficiency, and thyristors can even cause the failure of the converter by latch-up. Due to the lack of software tools for the evaluation of the effects of such parasitic devices in the design phase, often only qualitative counter-measures are taken. [...]
2017 - 4 p. - Published in : 10.1109/NEWCAS.2017.8010132
In : 15th IEEE International New Circuits and Systems Conference, Strasbourg, France, 25 - 28 Jun 2017, pp.169-172
Подробен запис - Подобни записи

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4 Koukab, A
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