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CERN Document Server 22 Datensätze gefunden  1 - 10nächsteEnde  gehen zum Datensatz: Die Suche hat 0.64 Sekunden gedauert. 
1.
Improvement in the Design and Performance of the Monopix2 Reticle-Scale DMAPS / Caicedo, Ivan (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Berdalovic, Ivan (CERN) ; Breugnon, Patrick (Marseille, CPPM) ; Cardella, Roberto (CERN) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; de Acedo, Leyre Flores Sanz (CERN) et al.
“LF-Monopix2” and “TJ-Monopix2” are the second generation of “Monopix” Depleted Monolithic Active Pixel Sensor prototypes fabricated in 150 nm and 180 nm CMOS processes, respectively. Both devices implement a fully functional column-drain read-out architecture at a reticle-size scale, but differ on the concept used for pixel design. [...]
2024 - 13 p. - Published in : JPS Conf. Proc. 42 (2024) 011021 Fulltext: PDF;
In : The International Workshop on Vertex Detectors (VERTEX 2022), Tateyama, Japan, 24 - 28 Oct 2022, pp.011021
2.
Recent results and perspectives of the Monopix Depleted Monolithic Active Pixel Sensors (DMAPS) / Hügging, Fabian (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrilon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Hirono, Toko (Bonn U.) et al.
The integration of readout electronics and sensors into a single entity of silicon in monolithic pixel detectors lowers the material budget while simplifying the production procedure compared to the conventional hybrid pixel detector concept. The increasing availability of high-resistivity substrates and high-voltage capabilities in commercial CMOS processes facilitates the application of depleted monolithic active pixel sensors (DMAPS) in modern particle physics experiments. [...]
2024 - 3 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1070 (2025) 170007 Fulltext: PDF;
In : 16th Pisa Meeting on Advanced Detectors (Pisameet 2024), La Biodola, Isola D'elba, Italy, 26 May - 1 Jun 2024, pp.170007
3.
Cross-talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180nm CMOS technology / Schall, Lars (Bonn U.) ; Bespin, Christian (Bonn U.) ; Caicedo, Ivan (Bonn U.) ; Dingfelder, Jochen (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Hirono, Toko (Bonn U.) ; Hügging, Fabian (Bonn U.) ; Krüger, Hans (Bonn U.) ; Moustakas, Konstantinos (Bonn U.) ; Pernegger, Heinz (CERN) et al.
Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted monolithic active pixel sensors (DMAPS) are able to cope with the high-rate and high-radiation environments faced in modern high-energy physics experiments. [...]
arXiv:2402.12153.- 2024-04-19 - 7 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1064 (2024) 169381 Fulltext: Publication - PDF; 2402.12153 - PDF;
In : 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Vancouver, Canada, 3 - 8 Dec 2023, pp.169381
4.
Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180 nm CMOS technology / Bespin, Christian (Bonn U.) ; Caicedo, Ivan (Bonn U.) ; Dingfelder, Jochen Christian (Bonn U.) ; Hemperek, Tomasz (Bonn U. ; DECTRIS Baden) ; Hirono, Toko (Bonn U. ; DESY) ; Hügging, Fabian (Bonn U.) ; Krüger, Hans (Bonn U.) ; Moustakas, Konstantinos (Bonn U. ; PSI, Villigen) ; Pernegger, Heinz (CERN) ; Riedler, Petra (CERN) et al.
Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. [...]
arXiv:2301.13638.- 2023 - 8 p. - Published in : PoS: Pixel2022 (2023) , pp. 080
Fulltext: document - PDF; 2301.13638 - PDF;
In : International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.080
5.
Development and characterization of a DMAPS chip in TowerJazz 180 nm technology for high radiation environments / Bespin, Christian (Bonn U.) ; Berdalovic, Ivan (CERN ; Zagreb U.) ; Caicedo, Ivan (Bonn U.) ; Cardella, Roberto (CERN) ; Dingfelder, Jochen (Bonn U.) ; Flores, Leyre (CERN) ; Hemperek, Tomasz (Bonn U.) ; Krüger, Hans (Bonn U.) ; Kugathasan, Thanushan (CERN) ; Marin Tobon, Cesar (CERN) et al.
The increasing availability of commercial CMOS processes with high-resistivity wafers has fueled the R&D; of depleted monolithic active pixel sensors (DMAPS) for use in high energy physics experiments. One of these developments is a series of monolithic pixel detectors with column-drain readout architecture and small collection electrode allowing for low-power designs (TJ-Monopix). [...]
2022 - 6 p.

In : Vienna Conference on Instrumentation, Online, Online, 21 - 25 Feb 2022, pp.167189
6.
Progress in DMAPS developments and first tests of the Monopix2 chips in 150 nm LFoundry and 180 nm TowerJazz technology / Dingfelder, J (Bonn U.) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Berdalovic, I (CERN) ; Bespin, C (Bonn U.) ; Breugnon, P (Marseille, CPPM) ; Caicedo, I (Bonn U.) ; Cardella, R (CERN) ; Degerli, Y (IRFU, Saclay) ; Flores Sanz de Acedo, L (CERN) et al.
Depleted Monolithic Active Pixel Sensors (DMAPS) are monolithic pixel detectors with high-resistivity substrates designed for use in high-rate and high-radiation environments. They are produced in commercial CMOS processes, resulting in relatively low production costs and short turnaround times, and offer a low material budget. [...]
2022 - 6 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1034 (2022) 166747
In : 30th International Workshop on Vertex Detectors (VERTEX 2021), Online, UK, 27 - 30 Sep 2021, pp.166747
7.
Depleted Monolithic Active Pixel Sensors in the LFoundry 150 nm and TowerJazz 180 nm CMOS Technologies / Wang, T (Bonn U.) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Berdalovic, I (CERN) ; Bespin, C (Bonn U.) ; Bhat, S (Marseille, CPPM) ; Breugnon, P (Marseille, CPPM) ; Caicedo, I (Bonn U.) ; Cardella, R (CERN) ; Chen, Z (Marseille, CPPM) et al.
The monolithic CMOS pixel sensor for charged particle tracking has already become a mainstream technology in high energy particle physics (HEP) experiments. During the last decade, progressive improvements have been made for CMOS pixels to deal with the high-radiation and high-rate environments expected, for example, at the future High Luminosity LHC. [...]
SISSA, 2020 - 10 p. - Published in : PoS Vertex2019 (2020) 026 Fulltext from Publisher: PDF;
In : Vertex 2019: 28th International Workshop on Vertex Detectors, Lopud Island, Croatia, 13 - 18 Oct 2019, pp.026
8.
Recent measurements on MiniMALTA, a radiation hard CMOS sensor with small collection electrodes for ATLAS / ATLAS Collaboration
The upgrade of the ATLAS tracking detector for the High-Luminosity Large Hadron Collider at CERN requires the development of novel radiation hard silicon sensor technologies.The MALTA Monolithic Active Pixel Sensor prototypes have been developed with the 180 nm TowerJazz CMOS imaging technology. This combines the engineering of high-resistivity sub- strates with on-chip high-voltage biasing to achieve a large depleted active sensor volumes, to meet the radiation hardness requirements of the outer barrel layers of the ATLAS ITK Pixel de- tector (1.5× 10$^{15}$ 1 MeV n$_{eq}$/cm$^{2}$ and 80 MRad TID). [...]
SISSA, 2020 - 11 p. - Published in : PoS Vertex2019 (2020) 020 Fulltext from Publisher: PDF;
In : Vertex 2019: 28th International Workshop on Vertex Detectors, Lopud Island, Croatia, 13 - 18 Oct 2019, pp.020
9.
Radiation hard DMAPS pixel sensors in 150 nm CMOS technology for operation at LHC / Barbero, M. (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bespin, C. (Bonn U.) ; Bhat, S. (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Chen, Z. (Marseille, CPPM) ; Degerli, Y. (IRFU, Saclay) ; Dingfelder, J. (Bonn U.) ; Godiot, Stephanie (Marseille, CPPM) et al.
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. [...]
arXiv:1911.01119.- 2020-05-22 - 22 p. - Published in : JINST Fulltext: PDF;
10.
Design of large scale sensors in 180 nm CMOS process modified for radiation tolerance / Flores Sanz de Acedo, L (CERN ; Glasgow U.) ; Asensi Tortajada, I (CERN ; Valencia U.) ; Barbero, M (Marseille, CPPM) ; Berdalovic, I (Zagreb U.) ; Bespin, C (Bonn U.) ; Bortoletto, D (Oxford U.) ; Buttar, C (Glasgow U.) ; Caicedo, I (Bonn U.) ; Cardella, R (CERN) ; Dachs, F (CERN) et al.
The last couple of years have seen the development of Depleted Monolithic Active Pixel Sensors (DMAPS) fabricated with a process modification to increase the radiation tolerance. Two large scale prototypes, Monopix with a column drain synchronous readout, and MALTA with a novel asynchronous architecture, have been fully tested and characterized both in the laboratory and in test beams. [...]
2020 - 6 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 980 (2020) 164403
In : 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164403

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