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CERN Document Server Намерени са 5 записа  Търсенето отне 1.00 секунди. 
1.
Development of radiation tolerant semiconductor detectors for the Super-LHC / RD50 Collaboration
The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 10challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10ns as well as the need for cost effective detectors have called for an intensive R&D; program. [...]
2005 - Published in : Nucl. Instrum. Methods Phys. Res., A 546 (2005) 99-107
2.
Radiation-hard semiconductor detectors for SuperLHC / Bruzzi, Mara ; Adey, J ; Al-Ajili, A A ; Alexandrov, P ; Alfieri, G ; Allport, Philip P ; Andreazza, A ; Artuso, M ; Assouak, S ; Avset, B S et al.
An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10/sup 35/ cm-/sup 2/s-/sup 1/ has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. [...]
2005 - Published in : Nucl. Instrum. Methods Phys. Res., A 541 (2005) 189-201
3.
Radiation hardness and charge collection efficiency of lithium irradiated thin silicon diodes / Boscardin, Maurizio ; Betta, G F D ; Bruzzi, Mara ; Candelori, Andrea ; Focardi, Ettore ; Khomenkov, Volodymyr P ; Piemonte, Claudio ; Ronchin, S ; Tosi, C ; Zorzi, N
Due to their low depletion voltage, even after high particle fluences, improved tracking precision and momentum resolution, and reduced material budget, thin substrates are one of the possible choices to provide radiation hard detectors for future high energy physics experiments. In the framework of the CERN RD50 Collaboration, we have developed PIN diode detectors on membranes obtained by locally thinning the silicon substrate by means of TMAH etching from the wafer backside. [...]
2005 - Published in : IEEE Trans. Nucl. Sci. 52 (2005) 1048-1053
4.
Lithium ion irradiation of standard and oxygenated silicon diodes / Candelori, A ; Betta, G F D ; Bisello, D ; Giubilato, P ; Kaminski, A ; Litovchenko, A P ; Lozano, A ; Petrie, J R ; Rando, R ; Ullán, M et al.
The next generation silicon detectors for future very high luminosity colliders or a possible LHC upgrade scenario will require radiation- hard detectors for fluences up to 10/sup 16/ 1-MeV equivalent neutrons/cm/sup 2/. These high fluences present strong constraints because long irradiation times are required at the currently available proton irradiation facilities. [...]
2004 - Published in : IEEE Trans. Nucl. Sci. 51 (2004) 2865-2871
In : 7th European Conference On Radiation And Its Effects On Components And Systems, Noordwijk, The Netherlands, 15 - 20 Sep 2003, pp.393-399
5.
Fabrication of ATLAS pixel detector prototypes at IRST / Boscardin, M ; Betta, G F D ; Gregori, P ; Zen, M ; Zori, N
We report on the development of a fabrication technology for n-on-n silicon pixel detectors oriented to the ATLAS experiment at LHC. The main processing issues and some selected results from the electrical characterization of detector prototypes and related test structures are presented and discussed. [...]
2001 - Published in : Nucl. Instrum. Methods Phys. Res., A 465 (2001) 83-7

Виж също: автори с подобни имена
2 Betta, G -F Dalla
1 Betta, G F Dalla
1 Betta, G F Dalla
1 Betta, Giovanni
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