002917164 001__ 2917164
002917164 005__ 20241204055211.0
002917164 0248_ $$aoai:cds.cern.ch:2917164$$pcerncds:FULLTEXT$$pcerncds:CERN:FULLTEXT$$pcerncds:CERN
002917164 037__ $$9arXiv$$aarXiv:2411.08740$$cphysics.ins-det
002917164 035__ $$9arXiv$$aoai:arXiv.org:2411.08740
002917164 035__ $$9Inspire$$aoai:inspirehep.net:2847990$$d2024-12-03T09:53:38Z$$h2024-12-04T03:01:37Z$$mmarcxml$$ttrue$$uhttps://inspirehep.net/api/oai2d
002917164 035__ $$9Inspire$$a2847990
002917164 041__ $$aeng
002917164 100__ $$aPloerer, Eduardo$$uVrije U., Brussels$$uU. Zurich (main)$$vVrije Universiteit Brussel, 1050 Brussels, Belgium$$vUniversity of Zurich, 8057 Zurich, Switzerland
002917164 245__ $$9arXiv$$aCharacterisation of analogue MAPS produced in the 65 nm TPSCo process
002917164 269__ $$c2024-11-13
002917164 300__ $$a7 p
002917164 500__ $$9arXiv$$a7 pages, 12 figures; Proceedings for iWoRiD 2024 (Lisbon)
002917164 520__ $$9arXiv$$aWithin the context of the ALICE ITS3 collaboration, a set of MAPS small-scale test structures were developed using the 65 nm TPSCo CMOS imaging process with the upgrade of the ALICE inner tracking system as its primary focus. One such sensor, the Circuit Exploratoire 65 nm (CE-65), and its evolution the CE-65v2, were developed to explore charge collection properties for varying configurations including collection layer process (standard, blanket, modified with gap), pixel pitch (15, 18, \SI{22.5}{\micro\meter}), and pixel geometry (square vs hexagonal/staggered). In this work the characterisation of the CE-65v2 chip, based on $^{55}$Fe lab measurements and test beams at CERN SPS, is presented. Matrix gain uniformity up to the $\mathcal{O}$(5%) level was demonstrated for all considered chip configurations. The CE-65v2 chip achieves a spatial resolution of under \SI2{\micro\meter} during beam tests. Process modifications allowing for faster charge collection and less charge sharing result in decreased spatial resolution, but a considerably wider range of operation, with both the \SI{15}{\micro\meter} and \SI{22.5}{\micro\meter} chips achieving over 99% efficiency up to a $\sim$180 e$^{-}$ seed threshold. The results serve to validate the 65 nm TPSCo CMOS process, as well as to motivate design choices in future particle detection experiments.
002917164 541__ $$aarXiv$$chepcrawl$$d2024-11-14T10:58:51.999760$$e8457114
002917164 540__ $$3preprint$$aarXiv nonexclusive-distrib 1.0$$uhttp://arxiv.org/licenses/nonexclusive-distrib/1.0/
002917164 65017 $$2arXiv$$ahep-ex
002917164 65017 $$2SzGeCERN$$aParticle Physics - Experiment
002917164 65017 $$2arXiv$$aphysics.ins-det
002917164 65017 $$2SzGeCERN$$aDetectors and Experimental Techniques
002917164 690C_ $$aCERN
002917164 690C_ $$aPREPRINT
002917164 693__ $$aCERN LHC$$eALICE
002917164 700__ $$aBaba, Hitoshi$$uTokyo U.$$vUniversity of Tokyo, Tokyo 113-8654, Japan
002917164 700__ $$aBaudot, Jerome$$uStrasbourg, IPHC$$vUniversité de Strasbourg, CNRS, IPHC UMR 7178, F-67000 Strasbourg, France
002917164 700__ $$aBesson, Auguste$$uStrasbourg, IPHC$$vUniversité de Strasbourg, CNRS, IPHC UMR 7178, F-67000 Strasbourg, France
002917164 700__ $$aBugiel, Szymon$$uStrasbourg, IPHC$$vUniversité de Strasbourg, CNRS, IPHC UMR 7178, F-67000 Strasbourg, France
002917164 700__ $$aChujo, Tatsuya$$uTsukuba U.$$vUniversity of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan
002917164 700__ $$aColledani, Claude$$uStrasbourg, IPHC$$vUniversité de Strasbourg, CNRS, IPHC UMR 7178, F-67000 Strasbourg, France
002917164 700__ $$aDorokhov, Andrei$$uStrasbourg, IPHC$$vUniversité de Strasbourg, CNRS, IPHC UMR 7178, F-67000 Strasbourg, France
002917164 700__ $$aBitar, Ziad El$$uStrasbourg, IPHC$$vUniversité de Strasbourg, CNRS, IPHC UMR 7178, F-67000 Strasbourg, France
002917164 700__ $$aGoffe, Mathieu$$uStrasbourg, IPHC$$vUniversité de Strasbourg, CNRS, IPHC UMR 7178, F-67000 Strasbourg, France
002917164 700__ $$aGunji, Taku$$uTsukuba U.$$vUniversity of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan
002917164 700__ $$aHu-Guo, Christine$$uStrasbourg, IPHC$$vUniversité de Strasbourg, CNRS, IPHC UMR 7178, F-67000 Strasbourg, France
002917164 700__ $$aIlg, Armin$$uZurich U.$$vUniversity of Zurich, 8057 Zurich, Switzerland
002917164 700__ $$aJaaskelainen, Kimmo$$uStrasbourg, IPHC
002917164 700__ $$aKatsuno, Towa$$uHiroshima U.$$vHiroshima University, Higashi-Hiroshima 739-8526, Japan
002917164 700__ $$aKluge, Alexander$$uCERN$$vCERN, CH-1211 Geneva 23, Switzerland
002917164 700__ $$aKostina, Anhelina$$uIEAP CTU, Prague$$vCzech Technical University in Prague, 160 00 Prague, Czech Republic
002917164 700__ $$aKumar, Ajit$$uStrasbourg, IPHC
002917164 700__ $$aLorenzetti, Alessandra$$uZurich U.
002917164 700__ $$aMacchiolo, Anna$$uZurich U.
002917164 700__ $$aMager, Magnus$$uCERN
002917164 700__ $$aPark, Jonghan$$uTsukuba U.$$vUniversity of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan
002917164 700__ $$aSakai, Shingo$$uTsukuba U.$$vUniversity of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan
002917164 700__ $$aSenyukov, Serhiy$$uStrasbourg, IPHC
002917164 700__ $$aShamas, Hasan$$uStrasbourg, IPHC
002917164 700__ $$aShibata, Daito$$uTsukuba U.$$vUniversity of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan
002917164 700__ $$aSnoeys, Walter$$uCERN
002917164 700__ $$aStanek, Pavel$$uIEAP CTU, Prague$$vCzech Technical University in Prague, 160 00 Prague, Czech Republic
002917164 700__ $$aSuljic, Miljenko$$uCERN
002917164 700__ $$aTomasek, Lukas$$uIEAP CTU, Prague$$vCzech Technical University in Prague, 160 00 Prague, Czech Republic
002917164 700__ $$aValin, Isabelle$$uStrasbourg, IPHC$$vUniversité de Strasbourg, CNRS, IPHC UMR 7178, F-67000 Strasbourg, France
002917164 700__ $$aWada, Reita$$uHiroshima U.$$vHiroshima University, Higashi-Hiroshima 739-8526, Japan
002917164 700__ $$aYamaguchi, Yorito$$uHiroshima U.
002917164 710__ $$gALICE Collaboration
002917164 773__ $$wC24-06-30
002917164 8564_ $$82681178$$s121899$$uhttp://cds.cern.ch/record/2917164/files/cross_section_gap_label.png$$y00001 Cross-sections of the CE-65v2 pixels detailing the Standard process (a) and the Modified with Gap process (b). The figures were adapted from Ref. \cite{The:2890181}.
002917164 8564_ $$82681179$$s146887$$uhttp://cds.cern.ch/record/2917164/files/single_pixel_cluster_5_2_gap15sq_label.png$$y00004 a) $^{55}$Fe spectrum for single pixel clusters for an individual pixel (x=5, y=2) of the CE-65v2 chip in the Modified with Gap process with a \SI{15}{\micro\meter} pitch. The Gaussian fit is marked in red. b) Gain distribution of the CE-65v2 chip in the Modified with Gap process with a \SI{15}{\micro\meter} pitch obtained by considering the normalized K$_{\alpha}$ peak position (Figure \ref{fig:gain_2d}a) for each pixel.
002917164 8564_ $$82681180$$s101890$$uhttp://cds.cern.ch/record/2917164/files/efficiency_gap_label.png$$y00007 Efficiency as a function of seed threshold (e$^{-}$) for the CE-65v2 chip with \SI{15}{\micro\meter} (blue) and a \SI{22.5}{\micro\meter} pitch (pink) in the Standard (a) and the Modified with Gap process (b). The 99\% efficiency line (dotted) is marked explicitly.
002917164 8564_ $$82681181$$s62070$$uhttp://cds.cern.ch/record/2917164/files/gain_2d_gap15sq_label.png$$y00005 a) $^{55}$Fe spectrum for single pixel clusters for an individual pixel (x=5, y=2) of the CE-65v2 chip in the Modified with Gap process with a \SI{15}{\micro\meter} pitch. The Gaussian fit is marked in red. b) Gain distribution of the CE-65v2 chip in the Modified with Gap process with a \SI{15}{\micro\meter} pitch obtained by considering the normalized K$_{\alpha}$ peak position (Figure \ref{fig:gain_2d}a) for each pixel.
002917164 8564_ $$82681182$$s82533$$uhttp://cds.cern.ch/record/2917164/files/resolution_gap_label.png$$y00009 Resolution as a function of seed threshold (e$^{-}$) for the CE-65v2 chip with \SI{15}{\micro\meter} (blue) and a \SI{22.5}{\micro\meter} pitch (pink) in the Standard (a) and the Modified with Gap process (b).
002917164 8564_ $$82681183$$s1336839$$uhttp://cds.cern.ch/record/2917164/files/2411.08740.pdf$$yFulltext
002917164 8564_ $$82681184$$s88348$$uhttp://cds.cern.ch/record/2917164/files/resolution_std_label.png$$y00008 Resolution as a function of seed threshold (e$^{-}$) for the CE-65v2 chip with \SI{15}{\micro\meter} (blue) and a \SI{22.5}{\micro\meter} pitch (pink) in the Standard (a) and the Modified with Gap process (b).
002917164 8564_ $$82681185$$s101657$$uhttp://cds.cern.ch/record/2917164/files/cross_section_standard_label.png$$y00000 Cross-sections of the CE-65v2 pixels detailing the Standard process (a) and the Modified with Gap process (b). The figures were adapted from Ref. \cite{The:2890181}.
002917164 8564_ $$82681186$$s183766$$uhttp://cds.cern.ch/record/2917164/files/charge_shape_gap225sq_label.png$$y00011 a) Accumulated charge ratio as a function of number of pixels in a cluster for the CE-65v2 chip with a \SI{22.5}{\micro\meter} in the Standard (a) and Modified with Gap process (b).
002917164 8564_ $$82681187$$s185867$$uhttp://cds.cern.ch/record/2917164/files/charge_shape_std225sq_label.png$$y00010 a) Accumulated charge ratio as a function of number of pixels in a cluster for the CE-65v2 chip with a \SI{22.5}{\micro\meter} in the Standard (a) and Modified with Gap process (b).
002917164 8564_ $$82681188$$s112710$$uhttp://cds.cern.ch/record/2917164/files/efficiency_std_label.png$$y00006 Efficiency as a function of seed threshold (e$^{-}$) for the CE-65v2 chip with \SI{15}{\micro\meter} (blue) and a \SI{22.5}{\micro\meter} pitch (pink) in the Standard (a) and the Modified with Gap process (b). The 99\% efficiency line (dotted) is marked explicitly.
002917164 8564_ $$82681189$$s175306$$uhttp://cds.cern.ch/record/2917164/files/single_pixel_cluster_std15sq_label.png$$y00003 $^{55}$Fe spectrum for single pixel clusters of the entire matrix of the CE-65v2 chip in the Modified with Gap process (a) and Standard process (b) with a \SI{15}{\micro\meter} pitch. The Gaussian fit is marked in red.
002917164 8564_ $$82681190$$s162573$$uhttp://cds.cern.ch/record/2917164/files/single_pixel_cluster_gap15sq_label.png$$y00002 $^{55}$Fe spectrum for single pixel clusters of the entire matrix of the CE-65v2 chip in the Modified with Gap process (a) and Standard process (b) with a \SI{15}{\micro\meter} pitch. The Gaussian fit is marked in red.
002917164 960__ $$a11
002917164 962__ $$b2911765$$k$$nlisbon20240630
002917164 980__ $$aConferencePaper
002917164 980__ $$aPREPRINT