002903416 001__ 2903416
002903416 003__ SzGeCERN
002903416 005__ 20240705225129.0
002903416 0247_ $$2DOI$$9Elsevier B.V.$$a10.1016/j.nima.2024.169497$$qpublication
002903416 0248_ $$aoai:cds.cern.ch:2903416$$pcerncds:CERN
002903416 035__ $$9https://inspirehep.net/api/oai2d$$aoai:inspirehep.net:2798826$$d2024-07-04T12:11:02Z$$h2024-07-05T05:21:14Z$$mmarcxml
002903416 035__ $$9Inspire$$a2798826
002903416 041__ $$aeng
002903416 100__ $$aTermo, G$$mgennaro.termo@cern.ch$$uCERN$$uLPHE, Lausanne$$vÉcole polytechnique fédérale de Lausanne, CH-1015 Lausanne, Switzerland
002903416 245__ $$9Elsevier B.V.$$aRadiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications
002903416 260__ $$c2024
002903416 300__ $$a7 p
002903416 520__ $$9Elsevier B.V.$$aThe 28 nm CMOS technology was selected as a promising candidate to upgrade electronics of particle detectors at CERN. Despite the robustness of this node to ultra-high levels of total ionizing dose has been proven, the resilience to 10161MeVneq/cm2 fluences is still unknown. Displacement damage effects on two 28 nm CMOS technology processes were therefore investigated through proton and neutron irradiation up to the fluences of interest for high energy physics applications. N-type and p-type core and I/O transistors with different sizes were studied. The results of the extensive irradiation campaign revealed that the 28 nm CMOS node was indeed affected by either proton or neutron. However, through X-ray irradiation it was possible to evidence that the observed radiation-induced degradation was caused by the amount of total ionizing dose deposited during neutron and proton exposure, rather than by displacement damage. These results support that 28 nm CMOS technology is suitable for applications in CERN particle detectors.
002903416 542__ $$3publication$$dElsevier B.V.$$g2024
002903416 65017 $$2SzGeCERN$$aDetectors and Experimental Techniques
002903416 6531_ $$9Elsevier B.V.$$a28 nm CMOS technology
002903416 6531_ $$9Elsevier B.V.$$aHigh luminosity-large hadron collider (HL-LHC)
002903416 6531_ $$9Elsevier B.V.$$aMOSFET reliability
002903416 6531_ $$9Elsevier B.V.$$aTotal ionizing dose (TID)
002903416 6531_ $$9Elsevier B.V.$$aUltra-high doses
002903416 6531_ $$9Elsevier B.V.$$aDisplacement damage (DD)
002903416 690C_ $$aARTICLE
002903416 690C_ $$aCERN
002903416 700__ $$aBorghello, G$$uCERN
002903416 700__ $$aFaccio, F$$uCERN
002903416 700__ $$aMichelis, S$$uCERN
002903416 700__ $$aKoukab, A$$uLPHE, Lausanne
002903416 700__ $$aSallese, J M$$uLPHE, Lausanne
002903416 773__ $$c169497$$mpublication$$pNucl. Instrum. Methods Phys. Res., A$$v1065$$y2024
002903416 960__ $$a13
002903416 980__ $$aARTICLE