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| Preprint | |
| Title | Design of a Radiation-Tolerant Bandgap Voltage Reference for HEP applications |
| Author(s) | Traversi, Gianluca (Bergamo U., Ingengneria Dept. ; INFN, Pavia) ; Gaioni, Luigi (Bergamo U., Ingengneria Dept. ; INFN, Pavia) ; Ballabriga, Rafael (CERN) ; Ceresa, Davide (CERN) ; Michelis, Stefano (CERN) |
| Publication | 2022 |
| Number of pages | 3 |
| Published in: | 10.1109/NSS/MIC44845.2022.10398970 |
| Presented at | 2022 IEEE Nuclear Science Symposium (NSS), Medical Imaging Conference (MIC) and Room Temperature Semiconductor Detector (RTSD) Conference (NSS/MIC 2022), Milan, Italy, 5 - 12 Nov 2022 |
| DOI | 10.1109/NSS/MIC44845.2022.10398970 |
| Subject category | Detectors and Experimental Techniques |
| Project | CERN-EP-RDET |
| Keywords | Semiconductor device modeling ; Temperature distribution ; Radiation effects ; Photonic band gap ; X-rays ; CMOS technology ; Standards ; Radiation Tolerance ; Circuit Design ; Supply Voltage ; CMOS Technology ; Resistance Values ; Voltage Drop |
| Abstract | This work discusses the design of a bandgap voltage reference circuit to be operated in harsh radiation environments. The circuit, designed in a standard 28 nm CMOS technology with a core voltage supply of 0.9 V, exhibits in simulations an average output voltage of about 480 mV with an average temperature coefficient of 22 ppm/°C in the range [-40°C, 60°C]. Some preliminary results of the characterization are also presented. |
| Other source | Inspire |
| Copyright/License | © 2022-2024 IEEE |