| Article | |
| Report number | arXiv:2404.12885 |
| Title | Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer |
| Author(s) | Moretti, T. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Semendyaev, I. (Geneva U.) ; Elviretti, M. (IHP, Frankfurt) ; Rücker, H. (IHP, Frankfurt) ; Nakamura, K. (KEK, Tsukuba) ; Takubo, Y. (KEK, Tsukuba) ; Togawa, M. (KEK, Tsukuba) ; Cadoux, F. (Geneva U.) ; Cardarelli, R. (Geneva U.) ; Cecconi, L. (Geneva U.) ; Débieux, S. (Geneva U.) ; Favre, Y. (Geneva U.) ; Fenoglio, C.A. (Geneva U.) ; Ferrere, D. (Geneva U.) ; Gonzalez-Sevilla, S. (Geneva U.) ; Iodice, L. (Geneva U.) ; Kotitsa, R. (Geneva U. ; CERN) ; Magliocca, C. (Geneva U.) ; Nessi, M. (Geneva U. ; CERN) ; Pizarro-Medina, A. (Geneva U.) ; Iglesias, J. Sabater (Geneva U.) ; Saidi, J. (Geneva U.) ; Pinto, M. Vicente Barreto (Geneva U.) ; Zambito, S. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Iacobucci, G. (Geneva U.) |
| Publication | 2024-07-29 |
| Imprint | 2024-04-19 |
| Number of pages | 15 |
| In: | JINST 19 (2024) P07036 |
| DOI | 10.1088/1748-0221/19/07/P07036 |
| Subject category | physics.ins-det ; Detectors and Experimental Techniques |
| Abstract | Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μ m pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a 130 nm SiGe BiCMOS technology process. The dependence on the proton fluence of the efficiency and the time resolution of this prototype was measured with the frontend electronics operated at a power density between 0.13 and 0.9 W/cm2. The testbeam data show that the detection efficiency of 99.96% measured at sensor bias voltage of 200 V before irradiation becomes 96.2% after a fluence of 1 x 1016 neq/cm2. An increase of the sensor bias voltage to 300 V provides an efficiency to 99.7% at that proton fluence. The timing resolution of 20 ps measured before irradiation rises for a proton fluence of 1 x 1016 neq/cm2 to 53 and 45 ps at HV = 200 and 300 V, respectively. |
| Copyright/License | publication: © 2024 The Author(s) (License: CC-BY-4.0) preprint: (License: CC BY 4.0) |
Corresponding record in: Inspire
Записът е създаден на 2024-08-07, последна промяна на 2024-08-08