| ATLAS Note | |
| Report number | ATL-ITK-PROC-2024-005 |
| Title | Defect level identification of ATLAS ITk Strip Sensors using DLTS |
| Author(s) |
Klein, Christoph Thomas (Carleton University (CA)) (+) ; Dandoy, Jeff (Carleton University (CA)) ; Duvnjak, Damir (Carleton University (CA)) ; Fadeyev, Vitaliy (University of California,Santa Cruz (US)) ; Hara, Kazuhiko (University of Tsukuba (JP)) ; Hirose, Shigeki (University of Tsukuba (JP)) ; Jessiman, Callan (Carleton University (CA)) ; Keller, John Stakely (Carleton University (CA)) ; Koffas, Thomas (Carleton University (CA)) ; Nakamura, Koji (High Energy Accelerator Research Organization (JP)) ; Staats, Ezekiel (Carleton University (CA)) ; Ullan, Miguel (Consejo Superior de Investigaciones Cientificas (CSIC) (ES)) ; Unno, Yoshinobu (High Energy Accelerator Research Organization (JP)) |
| Corporate Author(s) | The ATLAS collaboration |
| Publication | 2024 |
| Imprint | 12 Feb 2024 |
| Number of pages | 6 |
| In: | 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Vancouver, Canada, 3 - 8 Dec 2023 |
| Subject category | Particle Physics - Experiment |
| Accelerator/Facility, Experiment | CERN LHC ; ATLAS |
| Free keywords | HL-LHC ; ATLAS ; ITk ; DLTS |
| Abstract | As a part of ongoing studies in parallel to ITk Strip Sensor Production quality control (QC) and quality assurance (QA), diodes fabricated as test structures were measured using \emph{Deep-Level Transient Spectroscopy} (DLTS). This was done to achieve precise sensor simulations motivated by findings of anomalous leakage current behaviour, as well as to compile a more complete model of radiation damage in ITk Strip Sensors. Utilising DLTS spectra with varying test parameters, trap energy levels and cross-sections associated with defects in the devices were obtained. Furthermore, employing related measurements techniques, such as Thermal Admittance Spectroscopy (TAS), results were supplemented and expanded, or additional points of interest, such as the deep level profile and the capture kinematics of the trap levels, were investigated with double-pulse DLTS (DDLTS). A common trap consistent with a $\mathrm{C_i O_i}$ point defect in unirradiated diodes was identified, but also an additional trap suspected to cause high leakage current. In proton-irradiated diodes, defects related to vacancy clusters or a boron-hydrogen complex were observed. |
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