| Article | |
| Report number | arXiv:2211.04849 |
| Title | Isothermal annealing of radiation defects in silicon bulk material of diodes from 8” silicon wafers |
| Related title | Isothermal annealing of radiation defects in bulk material of diodes from 8" silicon wafers |
| Author(s) | Kieseler, Jan (CERN ; KIT, Karlsruhe, ETP) ; Dias de Almeida, Pedro Gonçalo (CERN ; Cantabria Inst. of Phys.) ; Kałuzińska, Oliwia Agnieszka (CERN ; Wroclaw Tech. U. ; KIT, Karlsruhe) ; Mühlnikel, Marie Christin (CERN ; Kirchhoff Inst. Phys.) ; Diehl, Leena (CERN) ; Sicking, Eva (CERN) ; Zehetner, Phillip (CERN ; LMU Munich (main)) |
| Publication | 2023-09-06 |
| Imprint | 2022-11-09 |
| Number of pages | 19 |
| Note | 19 pages, 14 Figures |
| In: | JINST 18 (2023) P09010 |
| DOI | 10.1088/1748-0221/18/09/P09010 |
| Subject category | hep-ex ; Particle Physics - Experiment ; physics.ins-det ; Detectors and Experimental Techniques |
| Abstract | The high luminosity upgrade of the LHC will provide unique physics opportunities, such as the observation of rare processes and precision measurements. However, the accompanying harsh radiation environment will also pose unprecedented challenged to the detector performance and hardware. In this paper, we study the radiation induced damage and its macroscopic isothermal annealing behaviour of the bulk material from new 8" silicon wafers using diode test structures. The sensor properties are determined through measurements of the diode capacitance and leakage current for three thicknesses, two material types, and neutron fluences from $6.5\cdot 10^{14}$ to $10^{16}\,\mathrm{neq/cm^2}$. |
| Copyright/License | preprint: (License: arXiv nonexclusive-distrib 1.0) publication: © 2023-2024 CERN (License: CC-BY-4.0) |
Corresponding record in: Inspire
Record created 2023-01-26, last modified 2024-09-27