002839278 001__ 2839278
002839278 003__ SzGeCERN
002839278 005__ 20231214043037.0
002839278 0247_ $$2DOI$$9IOP$$a10.1088/1748-0221/17/10/P10032
002839278 0248_ $$aoai:cds.cern.ch:2839278$$pcerncds:FULLTEXT$$pcerncds:CERN:FULLTEXT$$pcerncds:CERN
002839278 037__ $$9arXiv$$aarXiv:2206.07952$$cphysics.ins-det
002839278 035__ $$9Inspire$$aoai:inspirehep.net:2097226$$d2023-12-13T12:43:04Z$$h2023-12-14T03:00:08Z$$mmarcxml$$ttrue$$uhttps://inspirehep.net/api/oai2d
002839278 035__ $$9Inspire$$a2097226
002839278 041__ $$aeng
002839278 100__ $$aPaolozzi, L.$$uGeneva U.$$uCERN$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland$$vCERN,CH-1211 Geneva 23, Switzerland
002839278 245__ $$9IOP$$aPicosecond Avalanche Detector — working principle and gain measurement with a proof-of-concept prototype
002839278 246__ $$9arXiv$$aPicosecond Avalanche Detector -- working principle and gain measurement with a proof-of-concept prototype
002839278 269__ $$c2022-06-16
002839278 260__ $$c2022-10-20
002839278 300__ $$a15 p
002839278 520__ $$9IOP$$aThe Picosecond Avalanche Detector is a multi-junction
silicon pixel detector based on a (NP)$_{drift}$(NP)$_{gain}$
structure, devised to enable charged-particle tracking with high
spatial resolution and picosecond time-stamp capability. It uses a
continuous junction deep inside the sensor volume to amplify the
primary charge produced by ionizing radiation in a thin absorption
layer. The signal is then induced by the secondary charges moving
inside a thicker drift region. A proof-of-concept monolithic
prototype, consisting of a matrix of hexagonal pixels with
100 μm pitch, has been produced using the 130 nm SiGe BiCMOS
process by IHP microelectronics. Measurements on probe station and
with a $^{55}$Fe X-ray source show that the prototype is functional
and displays avalanche gain up to a maximum electron gain of 23. A
study of the avalanche characteristics, corroborated by TCAD
simulations, indicates that space-charge effects due to the large
primary charge produced by the conversion of X-rays from the
^55Fe source limits the effective gain.
002839278 520__ $$9arXiv$$aThe Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a $\mathrm{(NP)_{drift}(NP)_{gain}}$ structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. The signal is then induced by the secondary charges moving inside a thicker drift region. A proof-of-concept monolithic prototype, consisting of a matrix of hexagonal pixels with 100 $\mu$m pitch, has been produced using the 130 nm SiGe BiCMOS process by IHP microelectronics. Measurements on probe station and with a $^{55}$Fe X-ray source show that the prototype is functional and displays avalanche gain up to a maximum electron gain of 23. A study of the avalanche characteristics, corroborated by TCAD simulations, indicates that space-charge effects due to the large primary charge produced by the conversion of X-rays from the $^{55}$Fe source limits the effective gain.
002839278 540__ $$3publication$$aCC-BY-4.0$$bIOP$$fCERN-JINST$$uhttp://creativecommons.org/licenses/by/4.0/
002839278 540__ $$3preprint$$aarXiv nonexclusive-distrib 1.0$$uhttp://arxiv.org/licenses/nonexclusive-distrib/1.0/
002839278 542__ $$3publication$$dCERN$$g2022
002839278 65017 $$2INSPIRE$$aphysics.ins-det
002839278 65017 $$2SzGeCERN$$aDetectors and Experimental Techniques
002839278 6531_ $$9author$$aSolid state detectors
002839278 6531_ $$9author$$aTiming detectors
002839278 6531_ $$9author$$aParticle tracking detectors (Solid-state detectors)
002839278 6531_ $$9author$$aPixelated detectors and associated VLSI electronics
002839278 690C_ $$aARTICLE
002839278 690C_ $$aCERN
002839278 700__ $$aMunker, M.$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aCardella, R.$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aMilanesio, M.$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aGurimskaya, Y.$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aMartinelli, F.$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aPicardi, A.$$uGeneva U.$$uCERN$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland$$vCERN,CH-1211 Geneva 23, Switzerland
002839278 700__ $$aRücker, H.$$uIHP, Frankfurt$$vIHP — Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder), Germany
002839278 700__ $$aTrusch, A.$$uIHP, Frankfurt$$vIHP — Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder), Germany
002839278 700__ $$aValerio, P.$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aCadoux, F.$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aCardarelli, R.$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aDébieux, S.$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aFavre, Y.$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aFenoglio, C.A.$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aFerrere, D.$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aGonzalez-Sevilla, S.$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aKotitsa, R.$$uGeneva U.$$uCERN$$vCERN,CH-1211 Geneva 23, Switzerland$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aMagliocca, C.$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aMoretti, T.$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aNessi, M.$$uCERN$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland$$vCERN,CH-1211 Geneva 23, Switzerland
002839278 700__ $$aMedina, A. Pizarro$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aIglesias, J. Sabater$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aSaidi, J.$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aPinto, M. Vicente Barreto$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aZambito, S.$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 700__ $$aIacobucci, G.$$uGeneva U.$$vDépartement de Physique Nucléaire et Corpusculaire (DPNC), University of Geneva, 24 Quai Ernest-Ansermet, CH-1205 Geneva 4, Switzerland
002839278 773__ $$cP10032$$n10$$pJINST$$v17$$y2022
002839278 8564_ $$82404464$$s11316314$$uhttp://cds.cern.ch/record/2839278/files/2206.07952.pdf$$yFulltext
002839278 8564_ $$82404465$$s62613$$uhttp://cds.cern.ch/record/2839278/files/second_peak_vs_HV.png$$y00015 Average collected charge of the signals produced in the PicoAD by the conversion of X-ray photons from a $ ^{55}$Fe source. (Left) with hole gain produced by photon conversion in the drift region. (Right) with electron gain produced by photon conversions in the absorption region.
002839278 8564_ $$82404466$$s7178818$$uhttp://cds.cern.ch/record/2839278/files/Publication.pdf$$yFulltext
002839278 8564_ $$82404467$$s262547$$uhttp://cds.cern.ch/record/2839278/files/spectrum_calculation.png$$y00013 (Left) Signal amplitude spectrum measured with a $^{55}$Fe source for a dose4 PicoAD sample at a temperature of +20 $^{\circ}$C and high voltage of 100 V. ~(Right) Gain spectrum obtained using the electric field profiles from TCAD simulation and the analytical formula given in~\cite{MAES1990705} for the gain obtained from impact ionization.
002839278 8564_ $$82404468$$s16209$$uhttp://cds.cern.ch/record/2839278/files/Geometry.png$$y00000 Simplified cross section of the PicoAD detector. The sensor presents N-type pixels on a high-resistivity epitaxial layer with boron background. A second junction, deep inside the sensor volume, is used to produce a continuous avalanche gain layer. The epitaxial layer and the deep junction are operated in full depletion.
002839278 8564_ $$82404469$$s669195$$uhttp://cds.cern.ch/record/2839278/files/PROPOSITION_02-2_cut.png$$y00001 Manufacturing process of the PicoAD. ~Step 1: a high-resistivity epitaxial (absorption) layer is grown on a low resistivity, boron-doped substrate. Step 2: a uniform NP gain layer is implanted. Step 3: a second epitaxial layer is produced, which corresponds to the sensor drift region. Step 4: the top surface is processed to produce the pixel matrix; in the case of a monolithic implementation of the PicoAD, this is a full-CMOS processing. Step 5: the substrate can be thinned from the backside and metallized.
002839278 8564_ $$82404470$$s1246135$$uhttp://cds.cern.ch/record/2839278/files/attract_floorplan.png$$y00002 Layout of the monolithic silicon pixel ASIC used to test the PicoAD proof-of-concept prototypes. A detailed description of the ASIC layout and operation is reported in \cite{Iacobucci:2021ukp}.
002839278 8564_ $$82404471$$s45326$$uhttp://cds.cern.ch/record/2839278/files/gain_MIP.png$$y00006 Simulation of the gain produced by 63 electrons in a dose 4 PicoAD proof-of-concept prototype as a function of the initial position of the primary charge. The simulation is performed for 1 µm segments of a MIP in two of the cross sections reported in Figure \ref{fig:2DEfield}: C1, edge of the pixel (red dotted line); C3, center of the pixel (blue line). In this prototype, the gain layer is placed at 10 µm depth. The black dashed lines indicate the high field region produced by the gain layer. For a primary electron-hole position between 0 and 10 µm the avalanche is initiated by holes, between 10 and 14 µm the avalanche is initiated by electrons.
002839278 8564_ $$82404472$$s106060$$uhttp://cds.cern.ch/record/2839278/files/efield_2.5V_beforeBD.png$$y00004 (Top) 2D cut of the modulus of the electric field in the sensor volume after full depletion at a bias voltage 2.5 V before breakdown. The vertical lines C1, C2, C3 and C4 represent the regions used for the 1D cuts used for the study of the electric field: C1 is at the center of the inter-pixel region; C2 at the edge of the collection electrode; C3 is close to the side of the collection electrode; C4 is at the center of the collection electrode. (Bottom) 1D cut of the modulus of the electric field in the four regions of the sensor volume.
002839278 8564_ $$82404473$$s679726$$uhttp://cds.cern.ch/record/2839278/files/IV_wafer9_dose4_zoom.png$$y00011 IV measurement of a PicoAD sensor with gain-layer implant dose 4. (Left) In blue: the total current collected by the substrate. In brown: the current collected by the pixel terminals. In orange: the current collected by the power lines. In green: the current collected by the innermost guard ring. When the full depletion of the sensor is reached all the extra current is collected by the guard ring. (Right) Current collected by the same terminals before the onset of the extra current observed beyond 25 V. The effect of the depletion of the gain layer under the pixels and power lines is visible above 5 V.
002839278 8564_ $$82404474$$s50420$$uhttp://cds.cern.ch/record/2839278/files/first_peak_vs_HV.png$$y00014 Average collected charge of the signals produced in the PicoAD by the conversion of X-ray photons from a $ ^{55}$Fe source. (Left) with hole gain produced by photon conversion in the drift region. (Right) with electron gain produced by photon conversions in the absorption region.
002839278 8564_ $$82404475$$s58659$$uhttp://cds.cern.ch/record/2839278/files/gain_vs_HV.png$$y00016 Gain measured for the conversion of X-ray photons from a $^{55}$Fe source for electron-initiated avalanche as a function of the sensor bias voltage. For each temperature, the gain is obtained as the ratio between the mean collected charge of signals generated by 5.9 keV photon conversion in the PicoAD absorption layer and the mean value obtained at 85 V for conversions in the drift region in the sensor with gain-layer dose 1.
002839278 8564_ $$82404476$$s943549$$uhttp://cds.cern.ch/record/2839278/files/IV_wafer9_dose1.png$$y00008 (Left) Substrate current as a function of the sensor bias voltage applied to the substrate of a PicoAD sensor with gain-layer implant dose 1. In blue the current measured during the ramp up of the high voltage, in black the current during the ramp down. The reason for the current peak visible between 10 V and 30 V during ramp up, and not observed during ramp down of the high voltage, is given in the text. Each point is obtained averaging the current for 0.2 seconds. (Right) Current difference between ramp up and ramp down of the sensor bias voltage.
002839278 8564_ $$82404477$$s932505$$uhttp://cds.cern.ch/record/2839278/files/Probestation_new.png$$y00007 The regions of the chip probed in the IV scans. Each color corresponds to a different region for which the current was measured independently. The brown region is one of the matrices of passive pixels. The orange region is the deep-Nwell that hosts the electronics of the active pixels and the periphery of the chip. The green region probes the current collected by the innermost guard ring. The blue region is the substrate, which was accessible from outside the guard ring on the top surface and from the backside connection. The pixels in grey and the guard rings were left floating.
002839278 8564_ $$82404478$$s44502$$uhttp://cds.cern.ch/record/2839278/files/gainratio_vs_egain.png$$y00017 Ratio between the electron gain and the hole gain obtained with a $^{55}$Fe source for the four devices tested, as a function of the electron gain.
002839278 8564_ $$82404479$$s46712$$uhttp://cds.cern.ch/record/2839278/files/gain_center.png$$y00018 TCAD simulation of the gain of a point-like primary charge deposition at the center of a PicoAD pixel and at varying depth of 63 electrons (MIP, blue dotted curve, also shown in Figure~\ref{fig:GainMap}) and 1640 electrons ($ ^{55}$Fe X-ray conversion, red curve). The black dashed lines indicate the high field region produced by the gain layer.
002839278 8564_ $$82404480$$s798508$$uhttp://cds.cern.ch/record/2839278/files/IV_wafer9_dose4.png$$y00010 IV measurement of a PicoAD sensor with gain-layer implant dose 4. (Left) In blue: the total current collected by the substrate. In brown: the current collected by the pixel terminals. In orange: the current collected by the power lines. In green: the current collected by the innermost guard ring. When the full depletion of the sensor is reached all the extra current is collected by the guard ring. (Right) Current collected by the same terminals before the onset of the extra current observed beyond 25 V. The effect of the depletion of the gain layer under the pixels and power lines is visible above 5 V.
002839278 8564_ $$82404481$$s16895$$uhttp://cds.cern.ch/record/2839278/files/spectrum_w9439a.png$$y00012 (Left) Signal amplitude spectrum measured with a $^{55}$Fe source for a dose4 PicoAD sample at a temperature of +20 $^{\circ}$C and high voltage of 100 V. ~(Right) Gain spectrum obtained using the electric field profiles from TCAD simulation and the analytical formula given in~\cite{MAES1990705} for the gain obtained from impact ionization.
002839278 8564_ $$82404482$$s1404397$$uhttp://cds.cern.ch/record/2839278/files/structure_doping.png$$y00003 TCAD 3D model geometry used for simulation of the PicoAD gain with fully depleted sensor. The volume simulated corresponds to one quarter of two adjacent hexagonal pixels.
002839278 8564_ $$82404483$$s192402$$uhttp://cds.cern.ch/record/2839278/files/efield_cuts_2.5V_beforeBD.png$$y00005 (Top) 2D cut of the modulus of the electric field in the sensor volume after full depletion at a bias voltage 2.5 V before breakdown. The vertical lines C1, C2, C3 and C4 represent the regions used for the 1D cuts used for the study of the electric field: C1 is at the center of the inter-pixel region; C2 at the edge of the collection electrode; C3 is close to the side of the collection electrode; C4 is at the center of the collection electrode. (Bottom) 1D cut of the modulus of the electric field in the four regions of the sensor volume.
002839278 8564_ $$82404484$$s852570$$uhttp://cds.cern.ch/record/2839278/files/IV_wafer9_dose1_diff.png$$y00009 (Left) Substrate current as a function of the sensor bias voltage applied to the substrate of a PicoAD sensor with gain-layer implant dose 1. In blue the current measured during the ramp up of the high voltage, in black the current during the ramp down. The reason for the current peak visible between 10 V and 30 V during ramp up, and not observed during ramp down of the high voltage, is given in the text. Each point is obtained averaging the current for 0.2 seconds. (Right) Current difference between ramp up and ramp down of the sensor bias voltage.
002839278 960__ $$a13
002839278 980__ $$aARTICLE