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Title	Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory
Related title	Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory
Author(s)	Bosser, A L (Jyvaskyla U. ; LIRMM, Montpellier) ; Gupta, V (LIRMM, Montpellier ; Caltech, Pasadena (main)) ; Javanainen, A (Jyvaskyla U. ; Vanderbilt U. (main)) ; Tsiligiannis, G (CERN) ; La Lumondiere, S D (Aerospace Corp.) ; Brewe, D (Argonne (main)) ; Ferlet-Cavrois, V (ESTEC, Noordwijk) ; Puchner, H (Cypress Semiconductor, San Jose) ; Kettunen, H (Jyvaskyla U.) ; Gil, T (LIRMM, Montpellier) ; Wrobel, F (IES, Montpellier) ; Saigné, F (IES, Montpellier) ; Virtanen, A (Jyvaskyla U.) ; Dilillo, L (LIRMM, Montpellier)
Publication	2018
Number of pages	7
In:	10.1109/TNS.2018.2797543
In:	Conference on Radiation and its Effects on Components and Systems, CERN, Geneva, Switzerland, 2 - 6 Oct 2017
DOI	10.1109/TNS.2018.2797543
Subject category	Detectors and Experimental Techniques
Abstract	This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.

Corresponding record in: Inspire