Pagina principale > CERN R&D Projects > CERN Detector R&D Projects > RD50 > RD50 Papers > Prediction of charge collection efficiency in hadron-irradiated pad and pixel silicon detectors |
Published Articles | |
Title | Prediction of charge collection efficiency in hadron-irradiated pad and pixel silicon detectors |
Author(s) | Klingenberg, R (Dortmund U.) ; Krasel, O (Dortmund U.) ; Mass, M (Dortmund U.) ; Dobos, D (Dortmund U.) ; Gossling, C (Dortmund U.) ; Wunstorf, R (Dortmund U.) |
Publication | 2006 |
Imprint | 2006 |
Number of pages | 7 |
In: | Nucl. Instrum. Methods Phys. Res., A 568 (2006) pp.34-40 |
In: | 10th European Symposium on Semiconductor Detectors (formerly 'Elmau Conference'), Wildbad Kreuth, Germany, 12 - 16 Jun 2005, pp.34-40 |
DOI | 10.1016/j.nima.2006.05.273 |
Subject category | Detectors and Experimental Techniques |
Accelerator/Facility, Experiment | RD50 CERN LHC ; ATLAS |
Abstract | The Transient Current Technique (TCT) is used to measure pulse shapes of charge collection and to derive trapping times in irradiated silicon pad detectors in a fluence range up to $10^{15} \ n_{\rm{eq}} \rm{cm}^{-2}$. Simulations of electrical fields and charge collection mechanisms compared to the measurements of the TCT method allow to derive predictions of the charge collection efficiency. Independently, charge collection efficiencies have been determined in dedicated test beam data employing ATLAS pixel modules. Considering the geometry of pad and pixel structures the simulation for the tested fluence range can be verified and allows to extrapolate to larger fluences. This yields a useful input for the design of future silicon-based pixel detectors applicable in Super-LHC experiments. |