002624790 001__ 2624790 002624790 005__ 20230411044032.0 002624790 0248_ $$aoai:cds.cern.ch:2624790$$pcerncds:CERN$$pcerncds:CERN:FULLTEXT$$popenaire$$pcerncds:FULLTEXT 002624790 0247_ $$2DOI$$9bibmatch$$a10.1016/j.nima.2018.11.009 002624790 037__ $$9arXiv$$aarXiv:1806.04400$$cphysics.ins-det 002624790 035__ $$9arXiv$$aoai:arXiv.org:1806.04400 002624790 035__ $$9Inspire$$aoai:inspirehep.net:1677566$$d2023-04-10T21:55:45Z$$h2023-04-11T02:02:27Z$$mmarcxml$$ttrue$$uhttps://inspirehep.net/api/oai2d 002624790 035__ $$9Inspire$$a1677566 002624790 041__ $$aeng 002624790 100__ $$aIguaz, F.J.$$miguaz@cea.fr$$uIRFU, Saclay$$vIRFU, CEA, Université Paris-Saclay, F-91191 Gif-sur-Yvette, France 002624790 245__ $$9Elsevier$$aCharacterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade 002624790 269__ $$c2018-06-12 002624790 260__ $$c2019-08-21 002624790 300__ $$a2 p 002624790 500__ $$9arXiv$$a2 pages, 3 figures, proceedings of the 14th Pisa Meeting on Advanced Detectors (PM2018), submitted to Nucl. Instr. Meth. A 002624790 520__ $$9Elsevier$$aThis work reports on design and performance of a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The device used in this work, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade in 2025 for the High Luminosity Large Hadron Collider (HL-LHC). This type of devices has a lower production cost and lower material budget compared to presently used hybrid designs. In this work, the chip architecture will be described followed by the characterization of the different pixel flavors with an external injection signal and an iron source (5.9 keV x-rays). 002624790 520__ $$9arXiv$$aThis work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150\,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade in 2025 for the High Luminosity Large Hadron Collider (HL-LHC). This type of devices has a lower production cost and lower material budget compared to presently used hybrid designs. In this work, the chip architecture will be described followed by the characterization of the different pre-amplifier and discriminator flavors with an external injection signal and an iron source (5.9\,keV x-rays). 002624790 536__ $$aFP7$$c654168$$fAIDA-2020$$ropenAccess 002624790 540__ $$3preprint$$aarXiv nonexclusive-distrib 1.0$$uhttp://arxiv.org/licenses/nonexclusive-distrib/1.0/ 002624790 542__ $$3publication$$fElsevier B.V. 002624790 65017 $$2arXiv$$aphysics.ins-det 002624790 65017 $$2SzGeCERN$$aDetectors and Experimental Techniques 002624790 65017 $$2AIDA-2020$$a6: Novel high voltage and resistive CMOS sensors$$bWP 002624790 693__ $$aCERN LHC$$eATLAS 002624790 690C_ $$aCERN 002624790 690C_ $$aARTICLE 002624790 690C_ $$aAIDA-2020 002624790 690C_ $$aAIDA-2020PUB 002624790 700__ $$aBalli, F.$$iINSPIRE-00000243$$uIRFU, Saclay$$vIRFU, CEA, Université Paris-Saclay, F-91191 Gif-sur-Yvette, France 002624790 700__ $$aBarbero, M.$$iINSPIRE-00211139$$uMarseille, CPPM$$vCentre de physicque des particules de Marseille (CPPM), 163 Avenue de Luminy, Marseille, France 002624790 700__ $$aBhat, S.$$uMarseille, CPPM$$vCentre de physicque des particules de Marseille (CPPM), 163 Avenue de Luminy, Marseille, France 002624790 700__ $$aBreugnon, P.$$uMarseille, CPPM$$vCentre de physicque des particules de Marseille (CPPM), 163 Avenue de Luminy, Marseille, France 002624790 700__ $$aCaicedo, I.$$uBonn U.$$vUniversity of Bonn, Nussallee 12, Bonn, Germany 002624790 700__ $$aChen, Z.$$uMarseille, CPPM$$vCentre de physicque des particules de Marseille (CPPM), 163 Avenue de Luminy, Marseille, France 002624790 700__ $$aDegerli, Y.$$uIRFU, Saclay$$vIRFU, CEA, Université Paris-Saclay, F-91191 Gif-sur-Yvette, France 002624790 700__ $$aGodiot, S.$$uMarseille, CPPM$$vCentre de physicque des particules de Marseille (CPPM), 163 Avenue de Luminy, Marseille, France 002624790 700__ $$aGuilloux, F.$$uIRFU, Saclay$$vIRFU, CEA, Université Paris-Saclay, F-91191 Gif-sur-Yvette, France 002624790 700__ $$aGuyot, C.$$iINSPIRE-00087556$$uIRFU, Saclay$$vIRFU, CEA, Université Paris-Saclay, F-91191 Gif-sur-Yvette, France 002624790 700__ $$aHemperek, T.$$iINSPIRE-00306406$$uBonn U.$$vUniversity of Bonn, Nussallee 12, Bonn, Germany 002624790 700__ $$aHirono, T.$$uBonn U.$$vUniversity of Bonn, Nussallee 12, Bonn, Germany 002624790 700__ $$aKrüger, H.$$iINSPIRE-00218516$$uBonn U.$$vUniversity of Bonn, Nussallee 12, Bonn, Germany 002624790 700__ $$aMeyer, J.P.$$iINSPIRE-00220370$$uIRFU, Saclay$$vIRFU, CEA, Université Paris-Saclay, F-91191 Gif-sur-Yvette, France 002624790 700__ $$aOuraou, A.$$iINSPIRE-00221444$$uIRFU, Saclay$$vIRFU, CEA, Université Paris-Saclay, F-91191 Gif-sur-Yvette, France 002624790 700__ $$aPangaud, P.$$uMarseille, CPPM$$vCentre de physicque des particules de Marseille (CPPM), 163 Avenue de Luminy, Marseille, France 002624790 700__ $$aRymaszewski, P.$$uBonn U.$$vUniversity of Bonn, Nussallee 12, Bonn, Germany 002624790 700__ $$aSchwemling, P.$$iINSPIRE-00124725$$uIRFU, Saclay$$vIRFU, CEA, Université Paris-Saclay, F-91191 Gif-sur-Yvette, France 002624790 700__ $$aVandenbroucke, M.$$uIRFU, Saclay$$vIRFU, CEA, Université Paris-Saclay, F-91191 Gif-sur-Yvette, France 002624790 700__ $$aWang, T.$$uBonn U.$$vUniversity of Bonn, Nussallee 12, Bonn, Germany 002624790 700__ $$aWermes, N.$$iINSPIRE-00135524$$uBonn U.$$vUniversity of Bonn, Nussallee 12, Bonn, Germany 002624790 773__ $$01760011$$c652-653$$pNucl. Instrum. Methods Phys. Res., A$$v936$$wC18-05-27$$y2019 002624790 8564_ $$82228767$$s51553$$uhttp://cds.cern.ch/record/2624790/files/LFMONOPIX_Flavours.png$$y00001 Placement of pixel flavors in LF-Monopix chip 002624790 8564_ $$82228768$$s59575$$uhttp://cds.cern.ch/record/2624790/files/LFMONOPIX_MONOPIX7_Zong_Tuning_Sec_Mean2DElec.png$$y00000 Dependence of the threshold level in electrons units on the pixel position after the threshold tuning for the sample 7 of the LF-Monopix chip. 002624790 8564_ $$82228769$$s35070$$uhttp://cds.cern.ch/record/2624790/files/BreakVoltage_AIDA2.png$$y00002 Dependence of the leakage current on the bias voltage for three different samples of the LF-Monopix chip at room temperature (20 degrees). 002624790 8564_ $$82228770$$s179940$$uhttp://cds.cern.ch/record/2624790/files/1806.04400.pdf$$yFulltext 002624790 960__ $$a13 002624790 962__ $$b2261402$$k652-653$$nla biodola20180527 002624790 980__ $$aConferencePaper 002624790 980__ $$aARTICLE$$bAIDA-2020