CERN Accelerating science

Article
Title	Diamond pixel modules
Author(s)	Gan, K K (Ohio State U.) ; Vittone, E (Turin U.) ; Robichaud, A (Carleton U.) ; Potenza, R (Catania U. ; INFN, Catania) ; Kuleshov, S (Moscow, ITEP) ; Kagan, H (Ohio State U.) ; Kass, R (Ohio State U.) ; Wermes, N (Bonn U.) ; Dulinski, W (Strasbourg, IPHC) ; Eremin, V (Ioffe Phys. Tech. Inst.) ; Smith, S (Ohio State U.) ; Sopko, B (Prague, Tech. U.) ; Olivero, P (Turin U.) ; Gorisek, A (Stefan Inst., Ljubljana) ; Chren, D (Prague, Tech. U.) ; Kramberger, G (Stefan Inst., Ljubljana) ; Schnetzer, S (Rutgers U., Piscataway) ; Weilhammer, P (CERN) ; Martemyanov, A (Moscow, ITEP) ; Hugging, F (Bonn U.) ; Pernegger, H (CERN) ; Lagomarsino, S (INFN Florence ; Florence U., Dip. di Energetica) ; Manfredotti, C (Turin U.) ; Mishina, M (Fermilab) ; Trischuk, W (Toronto U.) ; Dobos, D (CERN) ; Cindro, V (Stefan Inst., Ljubljana) ; Belyaev, V (Moscow Phys. Eng. Inst.) ; Duris, J (UCLA) ; Claus, G (Strasbourg, IPHC) ; Wallny, R (UCLA) ; Furgeri, A (Karlsruhe U.) ; Tuve, C (Catania U. ; INFN, Catania) ; Goldstein, J (Bristol U.) ; Sciortino, S (INFN Florence ; Florence U., Dip. di Energetica) ; Sutera, C (Catania U. ; INFN, Catania) ; Asner, D (Carleton U.) ; Mikuz, M (Stefan Inst., Ljubljana) ; Lo Giudice, A (Turin U.) ; Velthuis, J (Bristol U.) ; Hits, D (Rutgers U., Piscataway) ; Griesmayer, E (CERN) ; Oakham, G (Carleton U.) ; Frais-Kolbl, H (Fachhochsch., Wiener Neustadt) ; Bellini, V (Catania U. ; INFN, Catania) ; D'Alessandro, R (INFN Florence ; Florence U., Dip. di Energetica) ; Cristinziani, M (Bonn U.) ; Barbero, M (Bonn U.) ; Schaffner, D (UCLA) ; Costa, S (Catania U. ; INFN, Catania) ; Goffe, M (Strasbourg, IPHC) ; La Rosa, A (CERN) ; Bruzzi, M (Florence U. ; INFN, Florence) ; Schreiner, T (Fachhochsch., Wiener Neustadt) ; de Boer, W (Karlsruhe U.) ; Parrini, G (INFN Florence ; Florence U., Dip. di Energetica) ; Roe, S (CERN) ; Randrianarivony, K (Carleton U.) ; Dolenc, I (Stefan Inst., Ljubljana) ; Moss, J (Ohio State U.) ; Brom, J M (Strasbourg, IPHC) ; Golubev, A (Moscow, ITEP) ; Mathes, M (Bonn U.) ; Eusebi, R (Fermilab) ; Grigoriev, E (Moscow, ITEP) ; Tsung, J W (Bonn U.) ; Mueller, S (Karlsruhe U.) ; Mandic, I (Stefan Inst., Ljubljana) ; Stone, R (Rutgers U., Piscataway) ; Menichelli, D (Florence U. ; INFN, Florence)
Publication	2011
Note	7th International Symposium on the Development and Application of Semiconductor Tracking Detectors, Int Conf Ctr, Hiroshima, JAPAN, AUG 29-SEP 01, 2009
In:	Nucl. Instrum. Methods Phys. Res., A 636 (2011) S125-S129
In:	7th International Symposium on the Development and Application of Semiconductor Tracking Detectors, Hiroshima, Japan, 29 Aug - 01 Sep 2009, pp.S125-S129
DOI	10.1016/j.nima.2010.04.096
Subject category	Detectors and Experimental Techniques
Accelerator/Facility, Experiment	RD42
Abstract	With the commissioning of the LHC in 2010 and upgrades expected in 2015, ATLAS and CMS are planning to upgrade their innermost tracking layers with radiation hard technologies. Chemical Vapor Deposition diamond has been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle, CDF and all LHC experiments. This material is now being considered as a sensor material for use very close to the interaction region where the most extreme radiation conditions exist Recently the RD42 collaboration constructed, irradiated and tested polycrystalline and single-crystal chemical vapor deposition diamond sensors to the highest fluences expected at the super-LHC. We present beam test results of chemical vapor deposition diamond up to fluences of 1.8 x 10(16) protons/cm(2) illustrating that both polycrystalline and single-crystal chemical vapor deposition diamonds follow a single damage curve. We also present beam test results of irradiated complete diamond pixel modules. (C) 2010 Published by Elsevier B.V.

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