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000804214 0247_ $$2DOI$$a10.1109/TNS.2005.852748
000804214 0247_ $$2DOI$$9bibmatch$$a10.1109/NSSMIC.2004.1462427
000804214 035__ $$9SPIRES$$a6051448
000804214 035__ $$9Inspire$$a664657
000804214 037__ $$9arXiv$$aphysics/0411143$$cphysics
000804214 041__ $$aeng
000804214 100__ $$aChiochia, Vincenzo$$iINSPIRE-00072997$$mvincenzo.chiochia@cern.ch$$uZurich U.$$vPhysik Inst., Zurich Univ., Switzerland
000804214 245__ $$aSimulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements
000804214 260__ $$c2004
000804214 269__ $$c16 Nov 2004
000804214 300__ $$a6 p
000804214 500__ $$9arXiv$$a8 pages, 11 figures. Talk presented at the 2004 IEEE Nuclear Science Symposium, October 18-21, Rome, Italy. Submitted to IEEE Transactions on Nuclear Science Subj-class: Instrumentation and Detectors
000804214 520__ $$aCharge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trapping observed in the data.
000804214 520__ $$aCharge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trapping observed in the data.
000804214 520__ $$aCharge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trapping observed in the data.
000804214 520__ $$9IEEE$$aCharge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well at two different fluences. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of signal trapping observed in the data.
000804214 595__ $$aLANL EDS
000804214 65017 $$2SzGeCERN$$aOther Fields of Physics
000804214 695__ $$9LANL EDS$$aInstrumentation and Detectors
000804214 695__ $$9LANL EDS$$aPhysics
000804214 690C_ $$aARTICLE
000804214 690C_ $$aCERN
000804214 700__ $$aSwartz, Morris$$uJohns Hopkins U.
000804214 700__ $$aBortoletto, Daniela$$uPurdue U.
000804214 700__ $$aCremaldi, Lucien$$uMississippi U.
000804214 700__ $$aCucciarelli, Susanna$$uBasel U.
000804214 700__ $$aDorokhov, Andrei$$uPSI, Villigen$$uZurich U.
000804214 700__ $$aHoermann, Christoph$$uZurich U.$$uPSI, Villigen
000804214 700__ $$aKim, Dongwook$$uJohns Hopkins U.
000804214 700__ $$aKonecki, Marcin$$uBasel U.
000804214 700__ $$aKotlinski, Danek$$uPSI, Villigen
000804214 700__ $$aProkofiev, Kirill$$uZurich U.$$uPSI, Villigen
000804214 700__ $$aRegenfus, Christian$$uZurich U.
000804214 700__ $$aRohe, Tilman$$uPSI, Villigen
000804214 700__ $$aSanders, David A.$$uMississippi U.
000804214 700__ $$aSon, Seunghee$$uPurdue U.
000804214 700__ $$aSpeer, Thomas$$uZurich U.
000804214 720__ $$aChiochia, Vincenzo
000804214 720__ $$aSwartz, Morris
000804214 720__ $$aBortoletto, Daniela
000804214 720__ $$aCremaldi, Lucien
000804214 720__ $$aCucciarelli, Susanna
000804214 720__ $$aDorokhov, Andrei
000804214 720__ $$aHoermann, Christoph
000804214 720__ $$aKim, Dongwook
000804214 720__ $$aKonecki, Marcin
000804214 720__ $$aKotlinski, Danek
000804214 720__ $$aProkofiev, Kirill
000804214 720__ $$aRegenfus, Christian
000804214 720__ $$aRohe, Tilman
000804214 720__ $$aSanders, David A.
000804214 720__ $$aSon, Seunghee
000804214 720__ $$aSpeer, Thomas
000804214 773__ $$c1067-1075$$pIEEE Trans. Nucl. Sci.$$v52$$y2005
000804214 8564_ $$uhttp://documents.cern.ch/cgi-bin/setlink?base=preprint&categ=physics&id=0411143$$yAccess to fulltext document
000804214 8564_ $$8268086$$s352549$$uhttp://cds.cern.ch/record/804214/files/0411143.pdf$$yAccess to fulltext document
000804214 8564_ $$82540506$$s379234$$uhttp://cds.cern.ch/record/804214/files/arXiv:physics_0411143.pdf
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