CERN Accelerating science

CMS Note
Report number	CMS-NOTE-1998-058
Title	High Voltage Performance of Silicon Detectors Irradiated under Bias
Author(s)	Bloch, Philippe (CERN) ; Cheremuhin, A E (JINR, Dubna, Russia) ; Ciasnohova, Andrea (CERN) ; Dauphin, G (Saclay) ; Golutvin, Igor (JINR, Dubna, Russia) ; Jading, Y (CERN) ; Peisert, Anna (CERN) ; Safieh, J (Saclay) ; Sergueev, S (JINR, Dubna, Russia) ; Zamiatin, Nikolai (JINR , Dubna, Russia)
Submitted by	9 Oct 1998
Subject category	Detectors and Experimental Techniques
Accelerator/Facility, Experiment	CERN LHC ; CMS
Free keywords	EC-PRESHOWER ; ECAL
Abstract	The CMS Preshower detector contains 16 sq. m of silicon. The silicon sensors' design is being finalized by taking into account their performance after five years of operation at high luminosity. Three detectors from different manufacturers were irradiated by neutrons and photons under bias and at low temperature. Their electrical parameters and their response to alpha and beta particles were measured. The charge collection efficiency attains a plateau at around 300 V. The irradiation set-up and the results of the measurements are presented in this paper.
Copyright/License	Preprint: (License: CC-BY-4.0)

Corresponding record in: Inspire