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Article
Title	New results on silicon microstrip detectors of CMS tracker
Author(s)	Demaria, N ; Albergo, S ; Angarano, M M ; Azzi, P ; Babucci, E ; Bacchetta, N ; Bader, A J ; Bagliesi, G ; Basti, A ; Biggeri, U ; Bilei, G M ; Bisello, D ; Boemi, D ; Bölla, G ; Bosi, F ; Borello, L ; Bortoletto, Daniela ; Bozzi, C ; Braibant, S ; Breuker, Horst ; Bruzzi, Mara (INFN and Universita', Firenze, Italy) ; Buffini, A ; Busoni, S ; Candelori, A ; Caner, A ; Castaldi, R ; Castro, A ; Catacchini, E ; Checcucci, B ; Ciampolini, P ; Civinini, C ; Creanza, D ; D'Alessandro, R ; Da Rold, M ; De Palma, M ; Dell'Orso, R ; Della Marina, R ; Dutta, S ; Eklund, C ; Peisert, Anna (CERN) ; Favro, G ; Feld, L ; Fiore, L ; Focardi, E ; French, M ; Freudenreich, Klaus ; Fürtjes, A ; Giassi, A ; Giorgi, M A ; Giraldo, A ; Glessing, B ; Gu, W H ; Hall, G ; Hammarström, R ; Hebbeker, T ; Hrubec, Josef ; Huhtinen, M ; Kaminski, A ; Karimäki, V ; Saint-Koenig, M ; Krammer, Manfred ; Lariccia, P ; Lenzi, M ; Loreti, M ; Lübelsmeyer, K ; Lustermann, W ; Mättig, P ; Maggi, G ; Mannelli, M ; Mantovani, G C ; Marchioro, A ; Mariotti, C ; Martignon, G ; McEvoy, B ; Meschini, M ; Messineo, A ; Migliore, E ; My, S ; Paccagnella, A ; Palla, Fabrizio ; Pandoulas, D ; Papi, A ; Parrini, G ; Passeri, D ; Pieri, M ; Piperov, S ; Potenza, R ; Radicci, V ; Raffaelli, F ; Raymond, M ; Santocchia, A ; Schmitt, B ; Selvaggi, G ; Servoli, L ; Sguazzoni, G ; Siedling, R ; Silvestris, L ; Skog, K ; Starodumov, Andrei ; Stavitski, I ; Stefanini, G ; Tempesta, P ; Tonelli, G ; Tricomi, A ; Tuuva, T ; Vannini, C ; Verdini, P G ; Viertel, Gert M ; Xie, Z ; Li, Y ; Watts, S ; Wittmer, B
Affiliation	(CERN)
Publication	2000
Imprint	2000
In:	Nucl. Instrum. Methods Phys. Res., A 447 (2000) 142-50
DOI	10.1016/S0168-9002(00)00182-0
Subject category	Detectors and Experimental Techniques
Accelerator/Facility, Experiment	CERN LHC ; CMS
Abstract	Interstrip and backplane capacitances on silicon microstrip detectors with pf strip on n substrate of 320 mu m thickness were measured for pitches between 60 and 240 mu m and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. pitch and width were compared with data. The detectors were measured before and after being irradiated to a fluence of 4*10/sup 14/ protons/cm/sup 2/ of 24 GeV/e momentum. The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a (100) substrate. Working at high bias (up to 500 V in CMS) might be critical for the stability of detector, for a small width over pitch ratio. The influence of having a metal strip larger than the p/sup +/ implant has been studied and found to enhance the stability. (7 refs).

Corresponding record in: Inspire